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Aditya Sood

Publications and source records attributed to Aditya Sood.

17 recordsLinked to original sources

Neural Field Thermal Tomography: A Differentiable Physics Framework for Non-Destructive Evaluation

Inverse problems for stiff parabolic partial differential equations (PDEs), such as the inverse heat conduction problem (IHCP), are severely ill-posed: the forward map rapidly damps high-frequency interior structure before it reaches the boundary. Soft-constrained physics-informed neural networks (PINNs), which embed the PDE as a residual penalty, suffer from gradient pathology in this regime and tend to fit boundary measurements while leaving the interior field essentially untouched. We propose Neural Field Thermal Tomography (NeFTY), a hard-constrained neural field framework for label-free three-dimensional inverse heat conduction. NeFTY represents the unknown diffusivity as a continuous coordinate-based neural network, and at every optimization step passes the candidate field through a differentiable implicit-Euler heat solver with harmonic-mean interface flux, so that the governing PDE holds exactly on the discretization rather than as a soft penalty. Adjoint gradients propagate the surface reconstruction error back to the network weights at solver-level memory cost, making test-time inversion tractable on a single GPU. Across synthetic 3D benchmarks, NeFTY substantially outperforms soft-constrained PINN variants and a voxel-grid baseline on label-free volumetric recovery, and it transfers to real thermography data, surpassing classical signal-processing baselines in both defect segmentation and depth estimation. Additional details at https://cab-lab-princeton.github.io/nefty/

cs.LG

Thickness and twist angle dependent interlayer excitons in metal monochalcogenide heterostructures

Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely gamma-InSe on epsilon-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct bandgaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 \pm 0.1) Å with d being very close to dSe = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist angle dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. These heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier doping.

cond-mat.mes-hall

Engineering thermal transport across layered graphene-MoS2 superlattices

Layering two-dimensional van der Waals materials provides unprecedented control over atomic placement, which could enable tailoring of vibrational spectra and heat flow at the sub-nanometer scale. Here, using spatially-resolved ultrafast thermoreflectance and spectroscopy, we uncover the design rules governing cross-plane heat transport in superlattices assembled from monolayers of graphene (G) and MoS2 (M). Using a combinatorial experimental approach, we probe nine different stacking sequences: G, GG, MG, GGG, GMG, GGMG, GMGG, GMMG, GMGMG and identify the effects of vibrational mismatch, interlayer adhesion, and junction asymmetry on thermal transport. Pure G sequences display signatures of quasi-ballistic transport, whereas adding even a single M layer strongly disrupts heat conduction. The experimental data are described well by molecular dynamics simulations which include thermal expansion, accounting for the effect of finite temperature on the interlayer spacing. The simulations show that a change of only 1.5% in the layer separation can lead to a nearly 100% increase of the thermal resistance. Using these design rules, we experimentally demonstrate a 5-layer GMGMG superlattice with an ultralow effective cross-plane thermal conductivity comparable to air, paving the way for a new class of thermal metamaterials with extreme properties.

cond-mat.mes-hall

Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction

Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales underlying the electrically-driven insulator-metal transition is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide switches. We discover an electrically-triggered, isostructural state that forms transiently on microsecond timescales, stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase bears striking similarity to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway across eight orders of magnitude of timescale. Our results establish a new route for uncovering non-equilibrium and metastable phases in correlated materials, and open avenues for engineering novel dynamical behavior in nanoelectronics.

cond-mat.mtrl-sci

Anomalous thermopower oscillations in graphene-InAs nanowire vertical heterostructures

Thermoelectric measurements have the potential to uncover the density of states of low-dimensional materials. Here, we present the anomalous thermoelectric behaviour of mono-layer graphene-nanowire (NW) heterostructures, showing large oscillations as a function of doping concentration. Our devices consist of InAs NW and graphene vertical heterostructures, which are electrically isolated by thin ($\sim$ 10nm) hexagonal boron nitride (hBN) layers. In contrast to conventional thermoelectric measurements, where a heater is placed on one side of a sample, we use the InAs NW (diameter $\sim 50$ nm) as a local heater placed in the middle of the graphene channel. We measure the thermoelectric voltage induced in graphene due to Joule heating in the NW as a function of temperature (1.5K - 50K) and carrier concentration. The thermoelectric voltage in bilayer graphene (BLG)- NW heterostructures shows sign change around the Dirac point, as predicted by Mott's formula. In contrast, the thermoelectric voltage measured across monolayer graphene (MLG)-NW heterostructures shows anomalous large-amplitude oscillations around the Dirac point, not seen in the Mott response derived from the electrical conductivity measured on the same device. The anomalous oscillations are a signature of the modified density of states in MLG by the electrostatic potential of the NW, which is much weaker in the NW-BLG devices. Thermal calculations of the heterostructure stack show that the temperature gradient is dominant in the graphene region underneath the NW, and thus sensitive to the modified density of states resulting in anomalous oscillations in the thermoelectric voltage. Furthermore, with the application of a magnetic field, we detect modifications in the density of states due to the formation of Landau levels in both MLG and BLG.

cond-mat.mes-hall

Electrochemical Ion Insertion: From Atoms to Devices

Electrochemical ion insertion involves coupled ion-electron transfer reactions, transport of guest species, and redox of the host. The hosts are typically anisotropic solids with two-dimensional conduction planes, but can also be materials with one-dimensional or isotropic transport pathways. These insertion compounds have traditionally been studied in the context of energy storage, but also find extensive applications in electrocatalysis, optoelectronics, and computing. Recent developments in operando, ultrafast, and high-resolution characterization methods, as well as accurate theoretical simulation methods, have led to a renaissance in the understanding of ion-insertion compounds. In this Review, we present a unified framework for understanding insertion compounds across time and length scales ranging from atomic to device levels. Using graphite, transition metal dichalcogenides, layered oxides, oxyhydroxides, and olivines as examples, we explore commonalities in these materials in terms of point defects, interfacial reactions, and phase transformations. We illustrate similarities in the operating principles of various ion-insertion devices ranging from batteries and electrocatalysts to electrochromics and thermal transistors, with the goal of unifying research across disciplinary boundaries.

cond-mat.mtrl-sci

Graphene-Based Electromechanical Thermal Switches

Thermal management is an important challenge in modern electronics, avionics, automotive, and energy storage systems. While passive thermal solutions (like heat sinks or heat spreaders) are often used, actively modulating heat flow (e.g. via thermal switches or diodes) would offer additional degrees of control over the management of thermal transients and system reliability. Here we report the first thermal switch based on a flexible, collapsible graphene membrane, with low operating voltage, < 2 V. We also employ active-mode scanning thermal microscopy (SThM) to measure the device behavior and switching in real time. A compact analytical thermal model is developed for the general case of a thermal switch based on a double-clamped suspended membrane, highlighting the thermal and electrical design challenges. System-level modeling demonstrates the thermal trade-offs between modulating temperature swing and average temperature as a function of switching ratio. These graphene-based thermal switches present new opportunities for active control of fast (even nanosecond) thermal transients in densely integrated systems.

cond-mat.mtrl-sci

Temperature Dependent Thermal Boundary Conductance of Monolayer MoS$_2$ by Raman Thermometry

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with AlN and SiO$_2$, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MWm$^-$$^2$K$^-$$^1$ near room temperature, increasing as ~ T$^0$$^.$$^6$$^5$ in the range 300 - 600 K. The similar TBC of MoS$_2$ with the two substrates indicates that MoS$_2$ is the "softer" material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. Our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.

cond-mat.mes-hall

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3$ω$ method, finding it ranges from 674 ${\pm}$ 56 W/m/K at 100 K to 186 ${\pm}$ 7 W/m/K at 400 K, with a value of 237 ${\pm}$ 6 W/m/K at room temperature. We compare these data with analytical models and first principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths, over ~7 $μ$m at room temperature, and 50% by phonons with MFPs over ~0.3 $μ$m. Consequently, the effective thermal conductivity of AlN is strongly reduced in sub-micron thin films or devices due to phonon-boundary scattering.

cond-mat.mtrl-sci

Strongly Tunable Anisotropic Thermal Transport in MoS2 by Strain and Lithium Intercalation: First--Principles Calculations

The possibility of tuning the vibrational properties and the thermal conductivity of layered van der Waals materials either chemically or mechanically paves the way to significant advances in nanoscale heat management. Using first-principles calculations we investigate the modulation of heat transport in MoS2 by lithium intercalation and cross-plane strain. We find that both the in-plane and cross-plane thermal conductivity (kr, kz) of MoS2 are extremely sensitive to both strain and electrochemical intercalation. Combining lithium intercalation and strain, the in-plane and cross-plane thermal conductivity can be tuned over one and two orders of magnitude, respectively. Furthermore, since kr and kz respond in different ways to intercalation and strain, the thermal conductivity anisotropy can be modulated by two orders of magnitude. The underlying mechanisms for such large tunability of the anisotropic thermal conductivity of \Mos are explored by computing and analyzing the dispersion relations, group velocities, relaxation times and mean free paths of phonons. Since both intercalation and strain can be applied reversibly, their stark effect on thermal conductivity can be exploited to design novel phononic devices, as well as for thermal management in MoS2-based electronic and optoelectronic systems.

cond-mat.mtrl-sci

Quasi-ballistic thermal transport across MoS$_2$ thin films

Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. In general, it is thought that cross-plane thermal conductivities ($κ_z$) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure $κ_z$ across MoS$_2$ films of varying thickness (20 to 240 nm) and uncover evidence of very long c-axis phonon MFPs at room temperature in these layered semiconductors. Experimental data obtained using time-domain thermoreflectance (TDTR) are in good agreement with first-principles density functional theory (DFT). These calculations reveal that ~50% of the heat is carried by phonons with MFP >200 nm, exceeding kinetic theory estimates by nearly two orders of magnitude. Because of quasi-ballistic effects, the $κ_z$ of nanometer thin films of MoS$_2$ scales with their thickness and the volumetric thermal resistance asymptotes to a non-zero value, ~10 m$^{2}$KGW$^{-1}$. This contributes as much as 30% to the total thermal resistance of a 20 nm thick film, the rest being limited by thermal interface resistance with the SiO$_2$ substrate and top-side aluminum transducer. These findings are essential for understanding heat flow across nanometer-thin films of MoS$_2$ for optoelectronic and thermoelectric applications.

cond-mat.mes-hall

An electrochemical thermal transistor

The ability to actively regulate heat flow at the nanoscale could be a game changer for applications in thermal management and energy harvesting. Such a breakthrough could also enable the control of heat flow using thermal circuits, in a manner analogous to electronic circuits. Here we demonstrate switchable thermal transistors with an order of magnitude thermal on/off ratio, based on reversible electrochemical lithium intercalation in MoS2 thin films. We use spatially-resolved time-domain thermoreflectance to map the lithium ion distribution during device operation, and atomic force microscopy to show that the lithiated state correlates with increased thickness and surface roughness. First principles calculations reveal that the thermal conductance modulation is due to phonon scattering by lithium rattler modes, c-axis strain, and stacking disorder. This study lays the foundation for electrochemically-driven nanoscale thermal regulators, and establishes thermal metrology as a useful probe of spatio-temporal intercalant dynamics in nanomaterials.

physics.app-ph

Improving the performance of Ge$_2$Sb$_2$Te$_5$ materials via nickel doping: Towards RF-compatible phase-change devices

High-speed electrical switching of Ge2Sb2Te5 (GST) remains a challenging task due to the large impedance mismatch between the low-conductivity amorphous state and the high-conductivity crystalline state. In this letter, we demonstrate an effective doping scheme using nickel to reduce the resistivity contrast between the amorphous and crystalline states by nearly three orders of magnitude. Most importantly, our results show that doping produces the desired electrical performance without adversely affecting the film's optical properties. The nickel doping level is approximately 2% and the lattice structure remains nearly unchanged when compared with undoped-GST. The refractive indices at amorphous and crystalline states were obtained using ellipsometry which echoes the results from XRD. The material's thermal transport properties are measured using time-domain thermoreflectance (TDTR), showing no change upon doping. The advantages of this doping system will open up new opportunities for designing electrically reconfigurable high speed optical elements in the near-infrared spectrum.

cond-mat.mtrl-sci

Direct Visualization of Thermal Conductivity Suppression Due to Enhanced Phonon Scattering Near Individual Grain Boundaries

Understanding the impact of lattice imperfections on nanoscale thermal transport is crucial for diverse applications ranging from thermal management to energy conversion. Grain boundaries (GBs) are ubiquitous defects in polycrystalline materials, which scatter phonons and reduce thermal conductivity. Historically, their impact on heat conduction has been studied indirectly through spatially-averaged measurements, that provide little information about phonon transport near a single GB. Here, using spatially-resolved time-domain thermoreflectance (TDTR) measurements in combination with electron backscatter diffraction (EBSD), we make localized measurements of thermal conductivity within few μm of individual GBs in boron-doped polycrystalline diamond. We observe strongly suppressed thermal transport near GBs, a reduction in conductivity from ~1000 W/m-K at the center of large grains to ~400 W/m-K in the immediate vicinity of GBs. Furthermore, we show that this reduction in conductivity is measured up to ~10 μm away from a GB. A theoretical model is proposed that captures the local reduction in phonon mean-free-paths due to strongly diffuse phonon scattering at the disordered grain boundaries. Our results provide a new framework for understanding phonon-defect interactions in nanomaterials, with implications for the use of high thermal conductivity polycrystalline materials as heat sinks in electronics thermal management.

cond-mat.mes-hall

The Heat Conduction Renaissance

Some of the most exciting recent advancements in heat conduction physics have been motivated, enabled, or achieved by the thermal management community that ITherm serves so effectively. In this paper we highlight the resulting renaissance in basic heat conduction research, which is linked to cooling challenges from power transistors to portables. Examples include phonon transport and scattering in nanotransistors, engineered high-conductivity composites, modulated conductivity through phase transitions, as well as the surprising transport properties of low-dimensional (1D and 2D) nanomaterials. This work benefits strongly from decades of collaboration and leadership from the semiconductor industry.

physics.app-ph

Enhanced thermal conduction through nanostructured interfaces

Interfaces dominate heat conduction in nanostructured systems, and much work has focused on methods to enhance interfacial conduction. These approaches generally address planar interfaces, where the heat flux vector is everywhere normal to the interface. Here, we explore a nanostructured interface geometry that uses nonplanar features to enhance the effective interfacial conductance beyond what is possible with planar interfaces. This interface consists of interdigitating Al pillars embedded within SiO2 with characteristic feature size ranging from 100 nm to 800 nm. The total sidewall surface area is modulated to highlight the impact of this additional channel by changing the pillar-to-pillar pitch L_P between 1.6 um and 200 nm while maintaining the same Al:SiO2 fill fraction. Using optical pump-probe thermoreflectance measurements, we show that the effective conductance of a ~65 nm thick fin layer monotonically increases with decreasing L_P, and that the conductance for L_P = 200 nm is more than twice the prediction for a layered stack with the same volume ratio and a planar interface. Through a combination of Boltzmann transport modeling and finite element calculations, we explore the impact of the pitch L_P and the pillar aspect ratio on effective thermal conductance. This analysis suggests that the concept of nanostructured interfaces can be extended to interfaces between diffusive and quasi-ballistic media in highly scaled devices. Our work proposes that the controlled texturing of interfaces can facilitate interfacial conduction beyond the planar interface regime, opening new avenues for thermal management at the nanoscale.

cond-mat.mes-hall

Oscillatory settling in wormlike-micelle solutions: bursts and a long time scale

We study the dynamics of a spherical steel ball falling freely through a solution of entangled wormlike-micelles. If the sphere diameter is larger than a threshold value, the settling velocity shows repeated short oscillatory bursts separated by long periods of relative quiescence. We propose a model incorporating the interplay of settling-induced flow, viscoelastic stress and, as in M. E. Cates, D. A. Head and A. Ajdari, Phys. Rev. E, 2002, 66, 025202(R) and A. Aradian and M. E. Cates, Phys. Rev. E, 2006, 73, 041508, a slow structural variable for which our experiments offer independent evidence.

cond-mat.soft