arXiv subjects

Akihiko Shinya

Publications and source records attributed to Akihiko Shinya.

12 recordsLinked to original sources

arXiv2026

Mid-infrared spontaneous and stimulated emission dynamics in black phosphorus

Black phosphorus (BP) has attracted attention as a light-emitting layered semiconductor for mid-infrared (MIR) photonics owing to its direct and thickness-tunable bandgap energy, highly anisotropic optical transitions, and potentially suppressed Auger recombination. However, spontaneous and stimulated emission dynamics governed by carrier recombination in BP have remained unexplored because time-resolved emission spectroscopy is challenging in the MIR region. Here we develop a time-resolved MIR emission microscope combining wavelength upconversion with superconducting single photon detection. This approach enables observation of emission dynamics in photoexcited BP at a wavelength around 4.6 μm with sub-100-ps temporal resolution. Temperature-dependent measurements reveal a crossover from excitonic to electron-hole plasma emission at around 70 K, supported by independent results in the characteristic transition temperature, pump-fluence dependence, and rise and decay dynamics of MIR emission. In a suspended BP structure, we further observe a nonlinear increase in the emission intensity above a well-defined pump threshold. Spectral narrowing and intense picosecond emission pulses appear above the threshold, providing solid evidence of stimulated emission assisted by optical feedback from a Fabry-Pérot cavity. These results elucidate ultrafast carrier dynamics and optical gain formation in BP and establish time-resolved upconversion spectroscopy as a powerful approach for investigating MIR photonic materials and devices.

physics.optics↗

arXiv2026

Silicon photonic optical-electrical-optical converters based on load-resistor and current-injection operation

Optical-electrical-optical (OEO) converters are key primitives for low-latency, energy-efficient photonic computing because they enable nonlinear activation and optical signal regeneration on chip. We report two monolithically integrated silicon-photonic OEO converters-load-resistor (high-speed variant) and current-injection (high-gain variant) types-fabricated at a silicon photonics foundry. Each device combines a germanium photodetector with a micro-ring modulator (MRM). The converters exhibit reconfigurable nonlinear transfer functions and measurable on-chip RF OEO gain. The RF OEO gain scales linearly with the MRM bias power, with slopes of 0.10 mW^-1 (load-resistor of 10 kΩ) and 1.4 mW^-1 (current-injection), enabling a gain > 1 region at practical bias powers (~10 mW and ~1 mW, respectively). Eye diagrams confirm clear openings up to 4 Gb/s for a high-speed load-resistor variant with a 500-Ω load. To the best of our knowledge, this is the first experimental demonstration of a monolithically integrated, foundry-fabricated silicon-photonic load-resistor type OEO converter exhibiting reconfigurable nonlinear transfer and on-chip RF OEO gain. In the carrier-injection device, the activation slope exceeds unity, yielding 3.9 dB extinction-ratio regeneration. Short-pulse measurements yield 3-dB bandwidths of 1.49 GHz, 160 MHz (load-resistor of 500 Ω and 10 kΩ), and 76 MHz (current-injection), consistent with the RF data. Energy analysis shows an energy-bandwidth trade-off (RC-limited for load-resistor vs. lifetime-limited for injection) and outline routes to sub-pJ/bit operation via reduced capacitance and improved EO efficiency. These results establish silicon-photonic OEO converters as compact, foundry-compatible building blocks for scalable optoelectronic computing and optical neural networks.

physics.optics↗

arXiv2025

Higher-order exceptional points unveiled by nilpotence and mathematical induction

Non-Hermitian systems can have peculiar degeneracies of eigenstates called exceptional points (EPs). An EP of $n$ degenerate states is said to have order $n$, and higher-order EPs (HEPs) with $n \ge 3$ exhibit intrinsic order-scaling responses potentially applied to superior sensing and state control. However, traditional eigenvalue-based searches for HEPs are facing fundamental limitations in terms of complexity and implementation. Here, we propose a design paradigm for HEPs based on a simple property for matrices termed nilpotence and concise inductive procedure. The nilpotence guarantees a HEP with desired order and helps divide the problem. Our inductive scheme repeatedly extends a system and doubles its EP order, starting with a known design. Based on the nilpotence, we systematically design photonic cavity arrays operating at chiral, passive, and active HEPs with $n = 3, 6, 7$ and show their peculiar directional radiation, induced transparency, and enhanced transmittance and spontaneous emission, respectively. We inductively find lattice systems with diverging EP order originating from a well-known $2 \times 2$ parity-time-symmetric Hamiltonian. We also extend the active HEP system with $n = 7$ to another with $n = 14$ and have further magnified responses. Our work pushes the investigation and application of HEPs to previously unexplored regimes in various physical systems.

physics.optics↗

arXiv2025

On-chip room-temperature CW lasing from a III-V nanowire integrated with a Si photonic crystal platform

We report the demonstration of continuous-wave (CW) lasing at room temperature from a III-V semiconductor nanowire integrated into a Si photonic crystal (PhC) cavity. Conventional hybrid nanowire lasers [M. Takiguchi. et.al., APL Photonics, 2, 046106 (2017)], which typically feature circular nanowire-cross-sections, suffer from a weak optical confinement, preventing CW lasing under ambient conditions. To overcome this limitation, we fabricated nanowires with rectangular cross-sections via dry etching and integrated them into the air trenches of Si PhC cavities formed using atomic force microscope tips. This configuration forms a hybrid photonic crystal cavity with an improved optical confinement. As a result, we achieved room-temperature CW oscillation from a single nanowire, representing a significant step toward on-chip nanophotonic light sources. This unique in-plane integration of the nanolaser in the same plane as the Si slab rather than on top of the substrate will contribute to the development of compact, scalable, and CMOS-compatible photonic circuits.

physics.optics↗

arXiv2024

Optoelectronic recurrent neural network using optical-electrical-optical converters with RC delay

Optical neural network (ONN) has been attracting intense attention owing to their low latency and low-power consumption. Among the ONNs, optical recurrent neural network (RNN) enables low-power and high-speed time-series data processing using a compact loop structure. The loop losses need to be efficiently compensated so that the time-series information is maintained in the RNN operation. For this purpose, we focus on the optoelectronic RNN (OE-RNN) with optical-electrical-optical (OEO) converters to compensate for the loop losses. However, the effect of resistive-capacitive (RC) delay of OEO converters on the RNN performance is unclear. Here, we study in simulation an OE-RNN equipped with OEO converters with RC delay. We confirm that our modeled OE-RNN achieves the high training accuracy of time-series data classification even when RC delay is comparably large to the time interval of time-series data. Our analyses reveal that the accumulation of time-series data by RC delay does not degrade the RNN performance but rather can compensate for the degraded RNN performance due to loop losses. From the theoretical analysis referring to the gradient explosion and vanishing problems, we find the region related to loss and RC delay where the high training accuracy can be achieved. In simulation, we confirm this compensation effect in the large OE-RNN circuit up to 32$\times$32 scale. Our proposed scheme opens a new way of time-series data processing by utilizing RC delay for the optical computing and optical communication.

physics.optics↗

arXiv2023

Vector beam generation from standing hollow GaN nanowire lasers on sapphire substrate

We fabricated GaN based hollow nanowires standing upright on a sapphire substrate by the sublimation method and found that they exhibit laser oscillation at room temperature. These very long, hollow, nano-sized structures cannot be fabricated by other means. Furthermore, we determined the condition under which the fundamental mode is azimuthally polarized by investigating the dispersion of the hollow structure. Examination of the measured emission properties indicates that the hollow nanowire operates as a topological, vector-beam, light source.

physics.optics↗

arXiv2023

Improved design and experimental demonstration of ultrahigh-Q C${}_\text{6}$-symmetric H1 hexapole photonic crystal nanocavities

An H1 photonic crystal nanocavity is based on a single point defect and has eigenmodes with a variety of symmetric features. Thus, it is a promising building block for photonic tight-binding lattice systems that can be used in studies on condensed matter, non-Hermitian and topological physics. However, improving its radiative quality ($Q$) factor has been considered challenging. Here, we report the design of a hexapole mode of an H1 nanocavity with a $Q$ factor exceeding $10^8$. We achieved such extremely high-$Q$ conditions by designing only four structural modulation parameters thanks to the ${\rm C_{6}}$ symmetry of the mode, despite the need of more complicated optimizations for many other nanocavities. The fabricated silicon photonic crystal nanocavities exhibited a systematic change in their resonant wavelengths depending on the spatial shift of the air holes in units of 1 nm. Out of 26 such samples, we found eight cavities with loaded $Q$ factors over one million ($1.2 \times 10^6$ maximum). We examined the difference between the theoretical and experimental performances by conducting a simulation of systems with input and output waveguides and with randomly distributed radii of air holes. Automated optimization using the same design parameters further increased the theoretical $Q$ factor by up to $4.5 \times 10^8$, which is two orders of magnitude higher than in the previous studies. Our work elevates the performance of the H1 nanocavity to the ultrahigh-$Q$ level and paves the way for its large-scale arrays with unconventional functionalities.

physics.optics↗

arXiv2022

Imaginary couplings in non-Hermitian coupled-mode theory: Effects on exceptional points of optical resonators

Exceptional point (EP) degeneracies in coupled cavities with gain and loss provide on-chip photonic devices with unconventional features and performance. However, such systems with realistic structures often miss the exact EPs even in simulation, and the mechanism of this EP disruption has yet to be thoroughly identified. Here, we extend the coupled-mode theory of one-dimensional non-Hermitian resonator arrays to study the effects of the imaginary part of the inter-cavity coupling, which is a second-order term and attributed to material amplification, absorption, and radiation. By taking an appropriate gauge for the model, we clarify that the imaginary coupling components have a symmetric form in the effective Hamiltonian and hence represent non-Hermiticity. These additional factors can lift the gain- and loss-based EP degeneracies. However, they are proportional to the sum of the imaginary permittivities for involved cavity pairs. Thus, when the amplification and absorption of adjacent cavities are balanced, their contribution to the imaginary coupling is canceled, and the EP singularity can be restored. Radiation-induced imaginary couplings measure the change in net radiation loss by the interference between cavity modes. Their impact on the EP can also be counteracted by small cavity resonance detuning even in loss-biased cases. We show and analyze eligible simulation examples based on photonic crystal nanocavities, and highlight design of an ideal EP degeneracy that is protected by generalized PT symmetry and induced by radiation.

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arXiv2020

Observing exceptional point degeneracy of radiation with electrically pumped photonic crystal coupled-nanocavity lasers

Controlling gain and loss of coupled optical cavities can induce non-Hermitian degeneracies of eigenstates, called exceptional points (EPs). Various unconventional phenomena around EPs have been reported, and expected to incorporate extra functionalities into photonic devices. The eigenmode exactly under the EP degeneracy is also predicted to exhibit enhanced radiation. However, such responses have yet to be observed in on-chip lasers, because of both the limited controllability of their gain and loss and the lifting of degeneracy by pump-induced cavity detuning. Here, we report the first non-Hermitian nanophotonic platform based on two electrically pumped photonic crystal lasers and its spontaneous emission at an EP degeneracy. Systematically tuned and independent current injection to our wavelength-scale active heterostructure cavities enables us to demonstrate the clear EP phase transition of their spontaneous emission, accompanied with the spectral coalescence of coupled modes and reversed pump dependence of the intensity. Furthermore, we find experimentally and confirm theoretically the peculiar squared Lorentzian emission spectrum very near the exact EP, which indicates the four-fold enhancement of the photonic local density of states induced purely by the degeneracy. Our results open a new pathway to engineer the light-matter interaction by non-Hermiticity and explore larger reconfigurable laser arrays for further non-Hermitian features and physics.

physics.optics↗

arXiv2019

All-optical dynamic modulation of spontaneous emission rate in hybrid optomechanical cavity quantum electrodynamics systems

Recent nanofabrication technologies have miniaturized optical and mechanical resonators, and have led to a variety of novel optomechanical systems in which optical and mechanical modes are strongly coupled. Here we hybridize an optomechanical resonator with two-level emitters and successfully demonstrate all-optical dynamic control of optical transition in the two-level system by the mechanical oscillation via the cavity quantum-electrodynamics (CQED) effect. Employing copper-doped silicon nanobeam optomechanical resonators, we have observed that the spontaneous emission rate of excitons bound to copper atoms is dynamically modulated by the optically-driven mechanical oscillation within the time scale much shorter than the emission lifetime. The result is explained very well with an analytical model including the dynamic modulation of the Purcell effect and the exciton population. To the best of our knowledge, this is the first demonstration of a dynamic modulation of the spontaneous emission rate by mechanical oscillations. Our achievement will open up a novel field of hybrid optomechanical CQED systems in which three body--optical transitions, optical resonance modes, and mechanical resonance modes--are strongly coupled and will pave the way for novel hybrid quantum systems.

physics.optics↗

arXiv2017

Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal

We demonstrated sub-wavelength (~111 nm diameter) single nanowire (NW) continuous wave (CW) lasers on silicon photonic crystal in the telecom-band with direct modulation at 10 Gb/s by optical pumping at cryogenic temperatures. To estimate the small signal response and pseudo-random bit sequence (PRBS) modulation of our CW lasers, we employed a new signal detection technique that employs a superconducting single photon detector and a time-correlated single photon counting module. The results showed that our NW laser was unambiguously modulated at above 10 Gb/s and an open eye pattern was obtained. This is the first demonstration of a telecom-band CW NW laser with high-speed PRBS modulation.

physics.optics↗

arXiv2010

All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

We demonstrate channel selective 0.1-Gb/s photo-receiver operation at telecom wavelength using a silicon high-Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photo-current is enhanced of more than 100,000 due to the ultrahigh-Q (>100,000). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10 nW, the quantum efficiency of this device reaches about 10%.

physics.optics↗