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arXiv · 2510.05477

On-chip room-temperature CW lasing from a III-V nanowire integrated with a Si photonic crystal platform

Masato Takiguchi·Takuro Fujii·Hisashi Sumikura·Akihiko Shinya·Shinji Matsuo·Masaya Notomi
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Abstract

We report the demonstration of continuous-wave (CW) lasing at room temperature from a III-V semiconductor nanowire integrated into a Si photonic crystal (PhC) cavity. Conventional hybrid nanowire lasers [M. Takiguchi. et.al., APL Photonics, 2, 046106 (2017)], which typically feature circular nanowire-cross-sections, suffer from a weak optical confinement, preventing CW lasing under ambient conditions. To overcome this limitation, we fabricated nanowires with rectangular cross-sections via dry etching and integrated them into the air trenches of Si PhC cavities formed using atomic force microscope tips. This configuration forms a hybrid photonic crystal cavity with an improved optical confinement. As a result, we achieved room-temperature CW oscillation from a single nanowire, representing a significant step toward on-chip nanophotonic light sources. This unique in-plane integration of the nanolaser in the same plane as the Si slab rather than on top of the substrate will contribute to the development of compact, scalable, and CMOS-compatible photonic circuits.

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Masato Takiguchi, Takuro Fujii, Hisashi Sumikura, Akihiko Shinya, Shinji Matsuo, Masaya Notomi. 2025-10-07. On-chip room-temperature CW lasing from a III-V nanowire integrated with a Si photonic crystal platform. https://arxiv.org/abs/2510.05477

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