arXiv subjects

Alban Gassenq

Publications and source records attributed to Alban Gassenq.

3 recordsLinked to original sources

arXiv2025

Spatially-Controlled Planar Guided Crystallization of Low-Loss Phase Change Materials for Programmable Photonics

Photonic integrated devices are progressively evolving beyond passive components into fully programmable systems, notably driven by the progress in chalcogenide phase-change materials (PCMs) for non-volatile reconfigurable nanophotonics. However, the stochastic nature of their crystal grain formation results in strong spatial and temporal crystalline inhomogeneities. Here, we propose the concept of spatially-controlled planar guided crystallization, a novel method for programming the growth of optically homogeneous low-loss Sb2S3 PCM, leveraging the seeded directional and progressive crystallization within confined channels. This guided crystallization method is experimentally shown to circumvent the current limitations of conventional PCM-based nanophotonic devices, including a multilevel non-volatile optical phase-shifter exploiting a silicon nitride-based Mach-Zehnder interferometer, and a programmable metasurface with spectrally reconfigurable bound state in the continuum. Precisely controlling the growth of PCMs to ensure optically uniform crystalline properties across devices is the cornerstone for the industrial development of non-volatile reconfigurable photonic integrated circuits.

physics.optics↗

arXiv2017

Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications

Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be then partially etched to keep only localized strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated bonded on Si. Our approach allows to envision integrated strained-Ge on Si platform for mid-infrared integrated optics.

cond-mat.mtrl-sci↗

arXiv2016

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering

Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.

cond-mat.mtrl-sci↗