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arXiv · 1603.06370

Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering

Samuel Tardif·Alban Gassenq·Kevin Guilloy·Nicolas Pauc·Guilherme Osvaldo Dias·Jean-Michel Hartmann·Julie Widiez·Thomas Zabel·Esteban Marin·Hans Sigg·Jérôme Faist·Alexei Chelnokov·Vincent Reboud·Vincent Calvo·Jean-Sébastien Micha·Odile Robach·François Rieutord
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Abstract

Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.

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Samuel Tardif, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Guilherme Osvaldo Dias, Jean-Michel Hartmann, Julie Widiez, Thomas Zabel, Esteban Marin, Hans Sigg, Jérôme Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, Jean-Sébastien Micha, Odile Robach, François Rieutord. 2016-03-21. Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering. https://arxiv.org/abs/1603.06370

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