arXiv subjects

Albert Fert

Publications and source records attributed to Albert Fert.

60 records · Page 4Linked to original sources

arXiv2010

Unravelling the role of the interface for spin injection into organic semiconductors

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.

cond-mat.mtrl-sci↗

arXiv2009

Spin torque and waviness in magnetic multilayers: a bridge between Valet-Fert theory and quantum approaches

We develop a simple theoretical framework for transport in magnetic multilayers, based on Landauer-Buttiker scattering formalism and Random Matrix Theory. A simple transformation allows one to go from the scattering point of view to theories expressed in terms of local currents and electrochemical potential. In particular, our theory can be mapped onto the well established classical Valet Fert theory for collinear systems. For non collinear systems, in the absence of spin-flip scattering, our theory can be mapped onto the generalized circuit theory. We apply our theory to the angular dependance of spin accumulation and spin torque in non-collinear spin valves.

cond-mat.mes-hall↗

arXiv2009

High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes

Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.

cond-mat.mtrl-sci↗

arXiv2006

Transformation of spin information into large electrical signals via carbon nanotubes

Spin electronics (spintronics) exploits the magnetic nature of the electron, and is commercially exploited in the spin valves of disc-drive read heads. There is currently widespread interest in using industrially relevant semiconductors in new types of spintronic devices based on the manipulation of spins injected into a semiconducting channel between a spin-polarized source and drain. However, the transformation of spin information into large electrical signals is limited by spin relaxation such that the magnetoresistive signals are below 1%. We overcome this long standing problem in spintronics by demonstrating large magnetoresistance effects of 61% at 5 K in devices where the non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 micron gap between epitaxial electrodes of the highly spin polarized manganite La0.7Sr0.3MnO3. This improvement arises because the spin lifetime in nanotubes is long due the small spin-orbit coupling of carbon, because the high nanotube Fermi velocity permits the carrier dwell time to not significantly exceed this spin lifetime, because the manganite remains highly spin polarized up to the manganite-nanotube interface, and because the interfacial barrier is of an appropriate height. We support these latter statements regarding the interface using density functional theory calculations. The success of our experiments with such chemically and geometrically different materials should inspire adventure in materials selection for some future spintronics

cond-mat.mes-hall↗

arXiv2006

Multiferroic tunnel junctions

Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in electric polarization and magnetization to obtain four different logic states. However, schemes allowing a simple electrical readout of these different states have not been demonstrated so far. In this article, we show that this can be achieved if a multiferroic material is used as the tunnel barrier in a magnetic tunnel junction. We demonstrate that thin films of ferromagnetic-ferroelectric La0.1Bi0.9MnO3 (LBMO) retain both ferroic properties down to a thickness of only 2 nm. We have used such films as spin-filtering tunnel barriers the magnetization and electric polarization of which can be switched independently. In that case, the tunnel current across the structure is controlled by both the magnetic and ferroelectric configuration of the barrier, which gives rise to four distinct resistance states. This can be explained by the combination of spin filtering by the ferromagnetic LBMO barrier and the partial charge screening of electrical charges at the barrier/electrode interfaces due to ferroelectricity. We anticipate our results to be a starting point for more studies on the interplay between ferroelectricity and spin-dependent tunneling, and for the use of nanometric multiferroic elements in prototype devices. On a wider perspective, they may open the way towards novel reconfigurable logic spintronics architectures and to electrically controlled readout in quantum computing schemes using the spin-filter effect.

cond-mat.mtrl-sci↗

arXiv2005

Spinel ferrites: old materials bring new opportunities for spintronics

Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more versatile due to their more complex structure and the resulting many degrees of freedom. Here we show that the epitaxial growth of nanometric NiFe2O4 films onto perovskite substrates allows the stabilization of novel ferrite phases with properties dramatically differing from bulk ones. Indeed, NiFe2O4 films few nanometres thick have a saturation magnetization at least twice that of the bulk compound and their resistivity can be tuned by orders of magnitude, depending on the growth conditions. By integrating such thin NiFe2O4 layers into spin-dependent tunnelling heterostructures, we demonstrate that this versatile material can be useful for spintronics, either as a conductive electrode in magnetic tunnel junctions or as a spin-filtering insulating barrier in the little explored type of tunnel junction called spin-filter. Our findings are thus opening the way for the realisation of monolithic spintronics architectures integrating several layers of a single material, where the layers are functionalised in a controlled manner.

cond-mat.mtrl-sci↗