arXiv subjects

Albert Fert

Publications and source records attributed to Albert Fert.

At least 55 records · Page 3Linked to original sources

arXiv2017

Advances in the Physics of Magnetic Skyrmions and Perspective for Technology

Magnetic skyrmions are small swirling topological defects in the magnetization texture stabilized by the protection due to their topology. In most cases they are induced by chiral interactions between atomic spins existing in non-centrosymmetric magnetic compounds or in thin films in which inversion symmetry is broken by the presence of an interface. The skyrmions can be extremely small with diameters in the nanometer range and, importantly, they behave as particles that can be moved, created or annihilated, making them suitable for abacus-type applications in information storage, logic or neuro-inspired technologies. Up to the last years skyrmions were observed only at low temperature (and in most cases under large applied fields) but important efforts of research has been recently devoted to find thin film and multilayered structures in which skyrmions are stabilized above room temperature and manipulated by current. This article focuses on these recent advances on the route to devices prototypes.

cond-mat.mtrl-sci↗

arXiv2017

Electrical signature of individual magnetic skyrmions in multilayered systems

Magnetic skyrmions are topologically protected whirling spin textures that can be stabilized in magnetic materials in which a chiral interaction is present. Their limited size together with their robustness against the external perturbations promote them as the ultimate magnetic storage bit in a novel generation of memory and logic devices. Despite many examples of the signature of magnetic skyrmions in the electrical signal, only low temperature measurements, mainly in magnetic materials with B20 crystal structure, have demonstrated the skyrmions contribution to the electrical transport properties. Using the combination of Magnetic Force Microscopy (MFM) and Hall resistivity measurements, we demonstrate the electrical detection of sub-100 nm skyrmions in multilayered thin film at room temperature (RT). We furthermore analyse the room temperature Hall signal of a single skyrmion which contribution is mainly dominated by anomalous Hall effect.

cond-mat.mes-hall↗

arXiv2017

Significant Dzyaloshinskii-Moriya Interaction at Graphene-Ferromagnet Interfaces due to Rashba-effect

The possibility of utilizing the rich spin-dependent properties of graphene has attracted great attention in pursuit of spintronics advances. The promise of high-speed and low-energy consumption devices motivates a search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. Here we demonstrate that chiral spin textures are induced at graphene/ferromagnetic metal interfaces. This is unexpected because graphene is a weak spin-orbit coupling material and is generally not expected to induce sufficient Dzyaloshinskii-Moriya interaction to affect magnetic chirality. We demonstrate that graphene induces a new type of Dzyaloshinskii-Moriya interaction due to a Rashba effect. First-principles calculations and experiments using spin-polarized electron microscopy show that this graphene-induced Dzyaloshinskii-Moriya interaction can have similar magnitude as at interfaces with heavy metals. This work paves a new path towards two-dimensional material based spin orbitronics.

cond-mat.mtrl-sci↗

arXiv2017

Room-temperature current-induced generation and motion of sub-100nm skyrmions

Magnetic skyrmions are nanoscale windings of the spin configuration that hold great promise for technology due to their topology-related properties and extremely reduced sizes. After the recent observation at room temperature of sub-100 nm skyrmions stabilized by interfacial chiral interaction in magnetic multilayers, several pending questions remain to be solved, notably about the means to nucleate individual compact skyrmions or the exact nature of their motion. In this study, a method leading to the formation of magnetic skyrmions in a micrometer-sized nanotrack using homogeneous current injection is evidenced. Spin-transfer-induced motion of these small electricalcurrent-generated skyrmions is then demonstrated and the role of the out-of-plane magnetic field in the stabilization of the moving skyrmions is also analysed. The results of these experimental observations of spin torque induced motion are compared to micromagnetic simulations reproducing a granular type, non-uniform magnetic multilayer, in order to address the particularly important role of the magnetic inhomogeneities on the current-induced motion of sub-100 nm skyrmions, for which the material grains size is comparable to the skyrmion diameter.

cond-mat.mes-hall↗

arXiv2016

Emergent Phenomena Induced by Spin-Orbit Coupling at Surfaces and Interfaces

Spin-orbit coupling (SOC) describes the relativistic interaction between the spin and momentum degrees of freedom of electrons, and is central to the rich phenomena observed in condensed matter systems. In recent years, new phases of matter have emerged from the interplay between SOC and low dimensionality, such as chiral spin textures and spin-polarized surface and interface states. These low-dimensional SOC-based realizations are typically robust and can be exploited at room temperature. Here we discuss SOC as a means of producing such fundamentally new physical phenomena in thin films and heterostructures. We put into context the technological promise of these material classes for developing spin-based device applications at room temperature.

cond-mat.mes-hall↗

arXiv2016

Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Layer Stacking, Insulator Capping and Electric Field

Using first-principle calculations, we demonstrate several approaches to manipulate Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin magnetic films. First, we find that DMI is significantly enhanced when the ferromagnetic (FM) layer is sandwiched between nonmagnetic (NM) layers inducing additive DMI in NM/FM/NM structures. For instance, as Pt and Ir below Co induce DMI of opposite chirality, inserting Co between Pt (below) and Ir (above) in Ir/Co/Pt trilayers enhances the DMI of Co/Pt bilayers by 15\%. Furthermore, in case of Pb/Co/Pt trilayers (Ir/Fe/Co/Pt multilayers), DMI can be enhanced by 50\% (almost doubled) compared to Co/Pt bilayers reaching a very large DMI amplitude of 2.7 (3.2) meV/atom. Our second approach for enhancing DMI is to use oxide capping layer. We show that DMI is enhanced by 60\% in Oxide/Co/Pt structures compared to Co/Pt bilayers. Moreover, we unveiled the DMI mechanism at Oxide/Co inerface due to interfacial electric field effect, which is different to Fert-Levy DMI at FM/NM interfaces. Finally, we demonstrate that DMI amplitude can be modulated using an electric field with efficiency factor comparable to that of the electric field control of perpendicular magnetic anisotropy in transition metal/oxide interfaces. These approaches of DMI controlling pave the way for skyrmions and domain wall motion-based spintronic applications.

cond-mat.mtrl-sci↗

arXiv2016

A gate-variable spin current demultiplexer based on graphene

Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to realize long distance spin transport, together with efficient manipulation of spin current for novel logic-processing applications. Here, we describe a gate-variable spin current demultiplexer (GSDM) based on graphene, serving as a fundamental building block of reconfigurable spin current logic circuits. The concept relies on electrical gating of carrier density dependent conductivity and spin diffusion length in graphene. As a demo, GSDM is realized for both single-layer and bilayer graphene. The distribution and propagation of spin current in the two branches of GSDM depend on spin relaxation characteristics of graphene. Compared with Elliot-Yafet spin relaxation mechanism, D'yakonov-Perel mechanism results in more appreciable gate-tuning performance. These unique features of GSDM would give rise to abundant spin logic applications, such as on-chip spin current modulators and reconfigurable spin logic circuits.

cond-mat.mes-hall↗

arXiv2016

Spin to charge conversion in MoS$_{2}$ monolayer with spin pumping

Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess large intrinsic spin-orbit interaction which make them most relevant for the emerging field of spin-orbitronics. Here we report on the conversion of spin current to charge current in MoS2 monolayer. Using spin pumping from a ferromagnetic layer (10 nm of cobalt) we find that the spin to charge conversion is highly efficient. Analysis in the frame of the inverse Rashba-Edelstein (RE) effect yields a RE length in excess of 4 nm at room temperature. Furthermore, owing to the semiconducting nature of MoS$_{2}$, it is found that back-gating allows electrical field control of the spin-relaxation rate of the MoS$_{2}$-metallic stack.

cond-mat.mes-hall↗

arXiv2015

Current-limiting challenges for all-spin logic devices

All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory structure. Here we investigate the key current-limiting factors and develop a physics-based model of ASLD through nano-magnet switching, the spin transport properties and the breakdown characteristic of channel. First, ASLD with perpendicular magnetic anisotropy (PMA) nano-magnet is proposed to reduce the critical current (Ic0). Most important, the spin transport efficiency can be enhanced by analyzing the device structure, dimension, contact resistance as well as material parameters. Furthermore, breakdown current density (JBR) of spin channel is studied for the upper current limitation. As a result, we can deduce current-limiting conditions and estimate energy dissipation. Based on the model, we demonstrate ASLD with different structures and channel materials (graphene and copper). Asymmetric structure is found to be the optimal option for current limitations. Copper channel outperforms graphene in term of energy but seriously suffers from breakdown current limit. By exploring the current limit and performance tradeoffs, the optimization of ASLD is also discussed. This benchmarking model of ASLD opens up new prospects for design and implementation of future spintronics applications.

cond-mat.mtrl-sci↗

arXiv2015

Skyrmions at room temperature : From magnetic thin films to magnetic multilayers

Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach about 2 mJ/m2 in the case of the Ir/Co/Pt multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged magnetic bubble-like domains in these multilayers. The study of their behavir in magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the Dzyaloshinsskii-Moriya interaction. This discoevry of stable skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.

cond-mat.mtrl-sci↗

arXiv2015

Anatomy of Dzyaloshinskii-Moriya Interaction at Co/Pt Interfaces

The Dzyaloshinskii-Moriya Interaction (DMI) between spins is induced by spin-orbit coupling in magnetic materials lacking inversion symmetry. DMI is recognized to play a crucial role at the interface between ferromagnetic (FM) and heavy nonmagnetic (NM) metals to create topological textures called magnetic skyrmions which are very attractive for ultra-dense information storage and spintronic devices. DMI also plays an essential role for fast domain wall (DW) dynamics driven by spin-orbit torques. Here, we present first principles calculations which clarify the main features and microscopic mechanisms of DMI in Co/Pt bilayers. DMI is found to be predominantly located at the interfacial Co layer, originating from spin-orbit energy provided by the adjacent NM layer. Furthermore, no direct correlation is found between DMI and proximity induced magnetism in Pt. These results clarify underlying mechanisms of DMI at FM/NM bilayers and should help optimizing material combinations for skyrmion- and DW-based storage and memory devices.

cond-mat.mtrl-sci↗

arXiv2014

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.

cond-mat.mtrl-sci↗

arXiv2014

Spintronics with graphene

Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-μm range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents.

cond-mat.mtrl-sci↗

arXiv2014

Breathing modes of confined skyrmions in ultrathin magnetic dots

The dynamics of individual magnetic skyrmions confined in ultrathin film dots is studied theoretically. The systems considered are transition metal ferromagnets possessing perpendicular magnetic anisotropy and particular attention is given to the dynamic response of the skyrmions to perpendicular driving fields. By using micromagnetics simulations, it is shown that breathing modes can hybridize with geometrically-quantized spin wave eigenmodes of the circular dots considered, leading to distinct features in the power spectrum that differ to the behavior expected for uniformly magnetized systems. The field dependence of the breathing modes offers a direct means of detecting and characterizing such skyrmion states in experiment.

cond-mat.mtrl-sci↗

arXiv2013

Highly efficient spin transport in epitaxial graphene on SiC

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.

cond-mat.mtrl-sci↗

arXiv2012

Dynamics of Dzyaloshinskii domain walls in ultrathin magnetic films

We explore a new type of domain wall structure in ultrathin films with perpendicular anisotropy, that is influenced by the Dzyaloshinskii-Moriya interaction due to the adjacent layers. This study is performed by numerical and analytical micromagnetics. We show that these walls can behave like Neel walls with very high stability, moving in stationary conditions at large velocities under large fields. We discuss the relevance of such walls, that we propose to call Dzyaloshinskii domain walls, for current-driven domain wall motion under the spin Hall effect.

cond-mat.mes-hall↗

arXiv2012

Magnetic domain wall motion by spin transfer

The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied external field. Spin transfer can be used to induce magnetization reversals and oscillations, or to control the position of a magnetic domain wall. In this review, we focus on this last mechanism, which is today the subject of an extensive research, both because the microscopic details for its origin are still debated, but also because promising applications are at stake for non-volatile magnetic memories.

cond-mat.mtrl-sci↗

arXiv2010

Spin Hall Effect induced by resonant scattering on impurities in metals

The Spin Hall Effect (SHE) is a promising way for transforming charge currents into spin currents in spintronic devices. Large values of the Spin Hall Angle, the characteristic parameter of the yield of this transformation, have been recently found in noble metals doped with nonmagnetic impurities. We show that this can be explained by resonant scattering off impurity states split by the spin-orbit interaction. We apply our calculation to the interpretation of experiments on copper doped with 5d impurities and we describe the conditions to obtain the largest effects.

cond-mat.mes-hall↗