arXiv subjects

Alessandro Crippa

Publications and source records attributed to Alessandro Crippa.

17 recordsLinked to original sources

arXiv2026

Graphene Josephson diodes from inherent asymmetric disorder

Josephson diodes are non-reciprocal superconducting devices characterized by different switching currents depending on the current flow direction. They recently attracted considerable theoretical and experimental attention, in view of their possible application as rectifying elements in the field of superconducting electronics, and as probes to investigate symmetry breaking mechanisms in mesoscopic systems. In this work, we show that graphene Josephson junctions provide rectification of supercurrent with an efficiency exceeding 20%. The effect appears applying a mT out-of-plane magnetic field and is enhanced close to the nodes of the Fraunhofer interference pattern. Our theoretical model identifies long-range scattering potentials in the junction as the symmetry-breaking mechanism, which yields supercurrent rectification in highly transparent junctions. While graphene stands as an ultra-clean transmission medium, our work shows that unavoidable residual disorder in a clean two-dimensional system is sufficient to promote this effect. Tailoring of the inversion (mirror) symmetry breaking could be obtained via proper design of external gates.

cond-mat.supr-con↗

arXiv2026

Multiplexed microwave resonators by frequency comb spectroscopy

Coplanar waveguide resonators are central to the thriving field of circuit quantum electrodynamics. Recently, we have demonstrated the generation of a broadband microwave-frequency comb spectrum using a superconducting quantum interference device (SQUID) driven by a time-dependent magnetic field. Here, the frequency comb is used to spectroscopically probe a bank of coplanar microwave resonators, inductively coupled to a common transmission line, a standard circuit with a variety of applications. We compare the resonator line shape obtained from signals synthesized at room temperature using conventional electronics with the radiation produced in the cryogenic environment by our source, showing substantial equivalence in the estimation of the resonator quality factors. To measure non-uniformly spaced resonant frequencies, we drive the generator with a bi-chromatic tone to generate intermodulation products. Such a dense frequency comb spectrum enables simultaneous addressing of a few resonators via frequency multiplexing. Finally, we discuss the criteria for achieving effective spectroscopic coverage of a given frequency bandwidth.

quant-ph↗

arXiv2025

Quasi-$\Phi_0$-periodic supercurrent at quantum Hall transitions

The combination of superconductivity and quantum Hall (QH) effect is regarded as a key milestone in advancing topological quantum computation in solid-state systems. Recent quantum interference studies suggest that QH edge states can effectively mediate a supercurrent across high-quality graphene weak links. In this work we report the observation of a supercurrent associated with transitions between adjacent QH plateaus, where transport paths develop within the compressible two-dimensional bulk. We employ a back-gated graphene Josephson junction, comprising high-mobility CVD-grown graphene encapsulated in hexagonal Boron Nitride (hBN) and contacted by Nb leads. Superconducting pockets are detected persisting beyond the QH onset, up to 2.4 T, hence approaching the upper critical field of the Nb contacts. We observe an approximate $\Phi_0=h/2e$ periodicity of the QH-supercurrent as a function of the magnetic field, indicating superconducting interference in a proximitized percolative phase. These results provide a promising experimental platform to investigate the transport regime of percolative supercurrents, leveraging the flexibility of van der Waals devices.

cond-mat.mes-hall↗

arXiv2025

Coherent microwave comb generation via the Josephson effect

Frequency combs represent exceptionally precise measurement tools due to the coherence of their spectral lines. While optical frequency comb sources constitute a well-established technology, superconducting circuits provide a relatively unexplored on-chip platform for low-dissipation comb emitters able to span from gigahertz to terahertz frequencies. We demonstrate coherent microwave frequency comb generation by leveraging the ac Josephson effect in a superconducting quantum interference device. A time-dependent magnetic drive periodically generates voltage pulses, which in the frequency domain correspond to a comb with dozens of spectral modes. The micrometer-scale footprint and minimal dissipation inherent to superconducting systems foster the integration of our comb generator with advanced cryogenic electronics. Transferring optical techniques to the solid-state domain may enable new applications in quantum technologies.

cond-mat.supr-con↗

arXiv2024

Diode effect in the Fraunhofer pattern of disordered planar Josephson junctions

The Josephson diode effect describes the property of a Josephson junction to have different values of the critical current for different direction of applied bias current and it is the focus of intense research thanks to the possible applications. The ubiquity of the effect experimentally reported calls for a study of the impact that disorder can have in the appearance of the effect. We study the Fraunhofer pattern of planar Josephson junctions in presence of different kinds of disorder and imperfections and we find that a junction that is {\it mirror} symmetric at zero-field forbids the diode effect and that the diode effect is typically magnified at the nodal points of the Fraunhofer pattern. The work presents a comprehensive treatment of the role of pure spatial inhomogeneity in the emergence of a diode effect in planar junctions, with an extension to the multi-terminal case and to systems of Josephson junctions connected in parallel.

cond-mat.supr-con↗

arXiv2024

A gate tunable transmon qubit in planar Ge

Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junction is then integrated into an Xmon circuit and capacitively coupled to a transmission line resonator. We showcase the qubit tunability in a broad frequency range with resonator and two-tone spectroscopy. Time-domain characterizations reveal energy relaxation and coherence times up to 75 ns. Our results, combined with the recent advances in the spin qubit field, pave the way towards novel hybrid and protected qubits in a group IV, CMOS-compatible material.

cond-mat.mes-hall↗

arXiv2024

Supercurrent diode with high winding vortex

Nonreciprocal supercurrent refers to the phenomenon where the maximum dissipationless current in a superconductor depends on its direction of flow. This asymmetry underlies the operation of superconducting diodes and is often associated with the presence of vortices. Here, we investigate supercurrent nonreciprocal effects in a superconducting weak-link hosting distinct types of vortices. We demonstrate how the winding number of the vortex, its spatial configuration, and the shape of the superconducting lead can steer the sign and amplitude of the supercurrent rectification. We identify a general criterion for optimizing the rectification amplitude based on vortex patterns, focusing on configurations where the first harmonic of the supercurrent vanishes. We prove that supercurrent nonreciprocal effects can be used to diagnose high-winding vortex and to distinguish between different types of vorticity. Our results provide a toolkit for controlling supercurrent rectification through vortex phase textures and detecting unconventional vortex states.

cond-mat.supr-con↗

arXiv2023

Back-action supercurrent diodes

Back-action refers to a response that retro-acts on a system to tailor its properties with respect to an external stimulus. This effect is at the heart of many electronic devices such as amplifiers, oscillators, and sensors. Here, we demonstrate that back-action can be exploited to achieve non-reciprocal transport in superconducting circuits. In our devices, dissipationless current flows in one direction whereas dissipative transport occurs in the opposite direction. Supercurrent diodes presented so far rely on magnetic elements or vortices to mediate charge transport or external magnetic fields to break time-reversal symmetry. Back-action solely turns a conventional reciprocal superconducting weak link with no asymmetry between the current bias directions into a rectifier, where the critical current amplitude depends on the bias sign. The self-interaction of the supercurrent stems from the gate tunability of the critical current in metallic and semiconducting systems, which promotes nearly ideal magnetic field-free rectification with selectable polarity.

cond-mat.mes-hall↗

arXiv2023

Sign reversal diode effect in superconducting Dayem nanobridges

Supercurrent diodes are nonreciprocal electronic elements whose switching current depends on their flow direction. Recently, a variety of composite systems combining different materials and engineered asymmetric superconducting devices have been proposed. Yet, ease of fabrication and tunable sign of supercurrent rectification joined to large efficiency have not been assessed in a single platform so far. We demonstrate that all-metallic superconducting Dayem nanobridges naturally exhibit nonreciprocal supercurrents under an external magnetic field, with a rectification efficiency up to $\sim 27\%$. Our niobium nanostructures are tailored so that the diode polarity can be tuned by varying the amplitude of an out-of-plane magnetic field or the temperature in a regime without magnetic screening. We show that sign reversal of the diode effect may arise from the high-harmonic content of the current phase relation in combination with vortex phase windings present in the bridge or an anomalous phase shift compatible with anisotropic spin-orbit interactions.

cond-mat.supr-con↗

arXiv2023

Half-integer Shapiro steps in highly transmissive InSb nanoflag Josephson junctions

We investigate a ballistic InSb nanoflag-based Josephson junction with Nb superconducting contacts. The high transparency of the superconductor-semiconductor interfaces enables the exploration of quantum transport with parallel short and long conducting channels. Under microwave irradiation, we observe half-integer Shapiro steps that are robust to temperature, suggesting their possible non-equilibrium origin. Our results demonstrate the potential of ballistic InSb nanoflags Josephson junctions as a valuable platform for understanding the physics of hybrid devices and investigating their non-equilibrium dynamics.

cond-mat.supr-con↗

arXiv2021

Dynamics of hole singlet triplet qubits with large g-factor differences

The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener sweeps disentangle the Zeeman mixing effect from the spin-orbit induced coupling and show that large singlet-triplet avoided crossings do not imply a strong spin-orbit interaction. Our work emphasizes the need for a complete knowledge of the energy landscape when working with hole spin qubits.

cond-mat.mes-hall↗

arXiv2021

Evidence of Josephson coupling in a few-layer black phosphorus planar Josephson junction

Setting up strong Josephson coupling in van der Waals materials in close proximity to superconductors offers several opportunities both to inspect fundamental physics and to develop novel cryogenic quantum technologies. Here we show evidence of Josephson coupling in a planar few-layer black Phosphorus junction. The planar geometry allows us to probe the junction behavior by means of external gates, at different carrier concentrations. Clear signatures of Josephson coupling are demonstrated by measuring supercurrent flow through the junction at milli Kelvin temperatures. Manifestation of Fraunhofer pattern with a transverse magnetic field is also reported, confirming the Josephson coupling. These findings represent the first evidence of proximity Josephson coupling in a planar junction based on a van der Waals material beyond graphene and open the way to new studies, exploiting the peculiar properties of exfoliated black phosphorus thin flakes.

cond-mat.mes-hall↗

arXiv2020

A singlet triplet hole spin qubit in planar Ge

Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor-difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 $\mu$s which we extend beyond 150 $\mu$s with echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are on par with Ge single spin qubits, but they can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies.

cond-mat.mes-hall↗

arXiv2019

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.

cond-mat.mes-hall↗

arXiv2018

Electrical spin driving by $g$-matrix modulation in spin-orbit qubits

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-voltage dependence and anisotropy of the hole $g$-factors. We show that a $g$-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the $g$ factors, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.

cond-mat.mes-hall↗

arXiv2018

Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot

The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC. Here we report an experimental realization of electrically driven electron-spin resonance in a silicon-on-insulator (SOI) nanowire quantum dot device. The underlying driving mechanism results from an interplay between SOC and the multi-valley structure of the silicon conduction band, which is enhanced in the investigated nanowire geometry. We present a simple model capturing the essential physics and use tight-binding simulations for a more quantitative analysis. We discuss the relevance of our findings to the development of compact and scalable electron-spin qubits in silicon.

cond-mat.mes-hall↗

arXiv2017

Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry

We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Charge transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio-frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of charge transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot.

cond-mat.mes-hall↗