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arXiv · 1912.11403

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Léo Bourdet·Louis Hutin·Benoit Bertrand·Andrea Corna·Heorhii Bohuslavskyi·Anthony Amisse·Alessandro Crippa·Romain Maurand·Sylvain Barraud·Matias Urdampilleta·Christopher Bäuerle·Tristan Meunier·Marc Sanquer·Xavier Jehl·Silvano De Franceschi·Yann-Michel Niquet·Maud Vinet
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Abstract

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.

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Léo Bourdet, Louis Hutin, Benoit Bertrand, Andrea Corna, Heorhii Bohuslavskyi, Anthony Amisse, Alessandro Crippa, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Yann-Michel Niquet, Maud Vinet. 2019-12-20. All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology. https://doi.org/10.1109/ted.2018.2870115

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