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Alexander Tselev

Publications and source records attributed to Alexander Tselev.

At least 19 recordsLinked to original sources

Toward the Origins of Binding Energy Shifts and Satellites Formation During Plasma-XPS Measurements

In plasma X ray photoelectron spectroscopy emerges as a powerful platform for real time, in situ chemical analysis under conditions relevant to semiconductor processing and other plasma enabled technologies. This study investigates the origins of binding energy shifts and satellite peaks formation observed during plasma XPS measurements across conductive, dielectric, and gas phase systems. Using a standard laboratory based ambient pressure XPS apparatus coupled with an alternating current driven capacitively coupled plasma source, we show that metastable surface species, such as transient Au oxides, can be detected during plasma exposure, revealing chemical states hardly accessible using conventional ultrahigh vacuum XPS. In dielectric samples, we observe pressure- and plasma type dependent BE shifts up to 50 eV, attributed to X ray induced and plasma mediated surface charging. These shifts are mitigated at higher pressures plasmas or in electronegative plasmas, the latter due to enhanced charge compensation mechanisms involving slow negative ions. For gas phase species, AC plasma excitation leads to spectral broadening and the emergence of satellite peaks with a few eV energy separations, linked to oscillating local plasma potentials in the probing volume. These findings highlight the important and complex interplay of plasma parameters, surface charging, and local electric fields in shaping XPS spectra. Overall, plasma XPS emerges as a critical metrological tool for probing transient surface chemistry, with implications for semiconductor processing, material synthesis, and plasma diagnostics.

physics.plasm-ph

Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, we demonstrate that formation of negative boron vacancy defects, VB-, in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. We identify different defect types by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (NBVN) and reveal the presence of additional dark paramagnetic defects that influence spin-lattice relaxation time (T1) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices.

cond-mat.mtrl-sci

A general method for calibration of active scanning thermal probes

Scanning Thermal Microscopy (SThM) is a scanning probe technique aimed at quantitative characterization of local thermal properties at the length scale down to tens of nanometers. With many probe designs and approaches to interpretation of probe responses, there is a need for a universal framework, which would allow probe calibration and comparison of probe performance. Here, we have developed a calibration framework based on an abstracted, formal, probe model for active SThM probes. The calibration can be accomplished through measurements with two or three calibration samples. Requirements to calibration samples are described with examples of structures of suitable samples identified in published literature. A link to a published experimental work indirectly verifying the proposed procedure is provided. The calibration does not require knowledge of internal probe properties and yields a small and universal set of parameters that can be used to quantify thermal resistance presented to the probe by samples as well as to characterize active-mode SThM probes of any type and at any measurement frequency. We have illustrated how the probe calibration parameters can be used to guide probe design. We have also analyzed when the calibration approach can be used directly to measure thermal conductivity of unknown samples.

cond-mat.mtrl-sci

Polarization-controlled volatile ferroelectric and capacitive switching in Sn$_2$P$_2$S$_6$

Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn$_2$P$_2$S$_6$ at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau-Ginzburg-Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, domain wall mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.

physics.app-ph

Probing Electrified Liquid-Solid Interfaces with Scanning Electron Microscopy

Electrical double layers play a key role in a variety of electrochemical systems. The mean free path of secondary electrons in aqueous solutions is on the order of a nanometer, making them suitable for probing of ultrathin electrical double layers at solid-liquid electrolyte interfaces. Employing graphene as an electron-transparent electrode in a two-electrode electrochemical system, we show that the secondary electron yield of the graphene-liquid interface depends on the ionic strength and concentration of electrolyte and applied bias at the remote counter electrode. These observations have been related to polarization-induced changes in the potential distribution within the electrical double layer and demonstrate the feasibility of using scanning electron microscopy to examine and map electrified liquid-solid interfaces

physics.app-ph

Piezoresponse phase as variable in electromechanical characterization

Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate ferroelectrics domains. PFM gives insight into the strength of local piezoelectric coupling as well as polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units to physical material parameters, however, remains a challenge. While much effort has been spent on quantifying the PFM amplitude signal, little attention has been given to the PFM phase and it is often arbitrarily adjusted to fit expectations or processed as recorded. This is problematic when investigating materials with unknown or potentially negative sign of the probed effective electrostrictive coefficient or strong frequency dispersion of electromechanical responses since assumptions about the phase cannot be reliably made. The PFM phase can, however, provide important information on the polarization orientation and the sign of the electrostrictive coefficient. Most notably, the orientation of the PFM hysteresis loop is determined by the PFM phase. Moreover, when presenting PFM data as a combined signal, the resulting response can be artificially lowered or asymmetric if the phase data has not been correctly processed. Here, we demonstrate a path to identify the phase offset required to extract correct meaning from PFM phase data. We explore different sources of phase offsets including the experimental setup, instrumental contributions, and data analysis. We discuss the physical working principles of PFM and develop a strategy to extract physical meaning from the PFM phase. The proposed procedures are verified on two materials with positive and negative piezoelectric coefficients.

physics.app-ph

Learning from imperfections: constructing phase diagrams from atomic imaging of fluctuations

Materials characterization and property measurements are a cornerstone of material science, providing feedback from synthesis to applications. Traditionally, a single sample is used to derive information on a single point in composition space, and imperfections, impurities and stochastic details of material structure are deemed irrelevant or complicating factors in analysis. Here we demonstrate that atomic-scale studies of a single nominal composition can provide information on a finite area of chemical space. This information can be used to reconstruct the material properties in a finite composition and temperature range. We develop a statistical physics-based framework that incorporates chemical and structural data to infer effective atomic interactions driving segregation in a La5/8Ca3/8MnO3 thin-film. A variational autoencoder is used to determine anomalous behaviors in the composition phase diagram. This study provides a framework for creating generative models from diverse data and provides direct insight into the driving forces for cation segregation in manganites.

cond-mat.mtrl-sci

Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric

The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q33 as high as -3.2 m4/C2 and a resulting bulk piezoelectric coefficient d33 up to -85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few uC/cm2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely-used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials and might facilitate the quest towards novel ultrathin functional devices incorporating electromechanical response.

cond-mat.mtrl-sci

In aqua electrochemistry probed by XPEEM: experimental setup, examples, and challenges

Recent developments in environmental and liquid cells equipped with electron transparent graphene windows have enabled traditional surface science spectromicroscopy tools, such as X-ray photoelectron spectroscopy (XPS), photoemission electron microscopy (PEEM), and scanning electron microscopy (SEM) to be applied to study solid-liquid and liquid-gas interfaces. Here, we focus on the experimental implementation of PEEM to probe electrified graphene-liquid interfaces using electrolyte-filled microchannel arrays as a new sample platform. We demonstrate the important methodological advantage of these multi-sample arrays: they enable the combination of the wide field of view hyperspectral imaging capabilities from PEEM with the use of powerful data mining algorithms to reveal spectroscopic and temporal behaviors at the level of the individual microsample or the entire array ensemble

cond-mat.mtrl-sci

Quantification of Probe-Sample Electrostatic Forces with Dynamic Atomic Force Microscopy

Atomic Force Microscopy (AFM) methods utilizing resonant mechanical vibrations of cantilevers in contact with a sample surface have shown sensitivities as high as few picometers for detecting surface displacements. Such a high sensitivity is harnessed in several AFM imaging modes. Here, we demonstrate a cantilever-resonance-based method to quantify electrostatic forces on a probe arising in the presence of a surface potential or when a bias voltage is applied to the AFM probe. We find that the electrostatic forces acting on the probe tip apex can strongly dominate cantilever response in electromechanical measurements and produce signals equivalent to few pm of surface displacement. In combination with modeling, the measurements of the force were used to determine the strength of the electrical field at the probe tip apex in contact with a sample. We find an evidence that the electric field strength in the junctions is limited by about 0.5 V/nm. This field can be sufficiently strong to significantly influence material states and kinetic processes through charge injection, Maxwell stress, shifts of phase equilibria, and reduction of energy barriers for activated processes. Besides, the results provide a baseline for accounting for the effects of local electrostatic forces in electromechanical AFM measurements as well as offer additional means to probe ionic mobility and field-induced phenomena in solids.

cond-mat.mes-hall

Quantification of surface displacements and electromechanical phenomena via dynamic atomic force microscopy

Detection of dynamic surface displacements associated with local changes in material strain provides access to a number of phenomena and material properties. Contact resonance-enhanced methods of Atomic Force Microscopy (AFM) have been shown capable of detecting ~1-3 pm-level surface displacements, an approach used in techniques such as piezoresponse force microscopy, atomic force acoustic microscopy, and ultrasonic force microscopy. Here, based on an analytical model of AFM cantilever vibrations, we demonstrate a guideline to quantify surface displacements with a high accuracy by taking into account the cantilever shape at the first resonant contact mode depending on the tip-sample contact stiffness. The approach has been experimentally verified and further developed for the piezoresponse force microscopy (PFM) using well-defined ferroelectric materials. These results open up a way to accurate and precise measurements of the surface displacement as well as piezoelectric constants at the pm-scale with nanometer spatial resolution and will allow avoiding erroneous data interpretations and measurement artefacts. This analysis is directly applicable to all cantilever-resonance-based SPM techniques.

cond-mat.mtrl-sci

High-resolution dielectric characterization of minerals: a step towards understanding the basic interactions between microwaves and rocks

Microwave energy has been demonstrated to be beneficial for reducing the energetic cost of several steps of the mining process. Significant literature has been developed about this topic but few studies are focused on understanding the interaction between microwaves and minerals at a fundamental level in order to elucidate the underlying physical processes that control the observed phenomena. This is ascribed to the complexity of such phenomena, related to chemical and physical transformations, where electrical, thermal and mechanical forces play concurrent roles. In this work a new characterization method for the dielectric properties of mineral samples at microwave frequencies is presented. The method is based upon the scanning microwave microscopy technique that enables measurement of the dielectric constant, loss factor and conductivity with extremely high spatial resolution and accuracy. As opposed to conventional bulk dielectric techniques, the scanning microwave microscope can then access and measure the dielectric properties of micrometer-sized mineral inclusions within a complex structure of natural rock. In this work a 5 by 20 micrometers size hematite inclusion has been characterized at a microwave frequency of 3 GHz. Scanning electron microscopy/energy-dispersive x-ray spectroscopy and confocal micro Raman spectroscopy were used to determine the structural details and chemical and elemental composition of mineral sample on similar scale.

cond-mat.mtrl-sci

Microscopic theory for electrocaloric effects in planar double layer systems

We present a field theory approach to study changes in local temperature due to an applied electric field (the electrocaloric effect) in electrolyte solutions. Steric effects and a field-dependent dielectric function are found to be of paramount importance for accurate estimations of the electrocaloric effect. Interestingly, electrolyte solutions are found to exhibit negative electrocaloric effects. Overall, our results point toward using fluids near room temperature with low heat capacity and high salt concentration for enhanced electrocalorics.

cond-mat.soft

Electrostrictive and electrostatic responses in contact mode voltage modulated Scanning Probe Microscopies

Electromechanical response of solids underpins image formation mechanism of several scanning probe microscopy techniques including the piezoresponse force microscopy (PFM) and electrochemical strain microscopy (ESM). While the theory of linear piezoelectric and ionic responses are well developed, the contributions of quadratic effects including electrostriction and capacitive tip-surface forces to measured signal remain poorly understood. Here we analyze the electrostrictive and capacitive contributions to the PFM and ESM signals and discuss the implications of the dielectric tip-surface gap on these interactions.

cond-mat.mtrl-sci

Space charge dynamics in solid electrolytes with steric effect and Vegard stresses: resistive switching and ferroelectric-like hysteresis of electromechanical response

We performed self-consistent modelling of electrotransport and electromechanical response of solid electrolyte thin films allowing for steric effects of mobile charged defects (ions, protons or vacancies), electron degeneration and Vegard stresses. We establish correlations between the features of the space-charge dynamics, current-voltage and bending-voltage curves in the wide frequency range of applied electric voltage. The pronounced ferroelectric-like hysteresis of bending-voltage loops and current maxima on double hysteresis current-voltage loops appear for the electron-open electrodes. The double hysteresis loop with pronounced humps indicates the resistance switching of memristor-type. The switching occurs due to the strong coupling between electronic and ionic subsystem. The sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nature and correlation of electrical and mechanical memory effects in thin films of solid electrolytes. The analytical expression proving that the electrically induced bending of solid electrolyte films can be detected by interferometric methods is derived.

cond-mat.mtrl-sci

Defect thermodynamics and kinetics in thin strained ferroelectric films: the interplay of possible mechanisms

We present a theoretical description of the influence of misfit strain on mobile defects dynamics in thin strained ferroelectric films. Self-consistent solutions obtained by coupling the Poissons equation for electric potential with continuity equations for mobile donor and electron concentrations and time-dependent Landau-Ginzburg-Devonshire equations reveal that the Vegard mechanism (chemical pressure) leads to the redistribution of both charged and electro-neutral defects in order to decrease the effective stress in the film. Internal electric fields, both built-in and depolarization ones, lead to a strong accumulation of screening space charges (charged defects and electrons) near the film interfaces. Importantly, the corresponding screening length is governed by the misfit strain and Vegard coefficient. Mobile defects dynamics, kinetics of polarization and electric current reversal are defined by the complex interplay between the donor, electron and phonon relaxation times, misfit strain, finite size effect and Vegard stresses.

cond-mat.mtrl-sci

Magnetically Induced Field Effect in Carbon Nanotube Devices

Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from temperature-dependent magnetoconductance measurements.

cond-mat.mes-hall

Broadband dielectric microwave microscopy on $μ$m length scales

We demonstrate that a near-field microwave microscope based on a transmission line resonator allows imaging in a substantially wide range of frequencies, so that the microscope properties approach those of a spatially-resolved impedance analyzer. In the case of an electric probe, the broadband imaging can be used in a direct fashion to separate contributions from capacitive and resistive properties of a sample at length scales on the order of one micron. Using a microwave near-field microscope based on a transmission line resonator we imaged the local dielectric properties of a Focused Ion Beam (FIB) milled structure on a high-dielectric-constant Ba_{0.6}Sr_{0.4}TiO_3 (BSTO) thin film in the frequency range from 1.3 GHz to 17.4 GHz. The electrostatic approximation breaks down already at frequencies above ~10 GHz for the probe geometry used, and a full-wave analysis is necessary to obtain qualitative information from the images.

cond-mat.mtrl-sci