arXiv subjects

Andreas Sandner

Publications and source records attributed to Andreas Sandner.

7 recordsLinked to original sources

arXiv2021

Brown-Zak and Weiss oscillations in a gate-tunable graphene superlattice: A unified picture of miniband conductivity

Electrons exposed to a two-dimensional (2D) periodic potential and a uniform, perpendicular magnetic field exhibit a fractal, self-similiar energy spectrum known as the Hofstadter butterfly. Recently, related high-temperature quantum oscillations (Brown-Zak oscillations) were discovered in graphene moir\'{e} systems, whose origin lie in the repetitive occurrence of extended minibands/magnetic Bloch states at rational fractions of magnetic flux per unit cell giving rise to an increase in band conductivity. In this work, we report on the experimental observation of band conductivity oscillations in an electrostatically defined and gate-tunable graphene superlattice, which are governed both by the internal structure of the Hofstadter butterfly (Brown-Zak oscillations) and by a commensurability relation between the cyclotron radius of electrons and the superlattice period (Weiss oscillations). We obtain a complete, unified description of band conductivity oscillations in two-dimensional superlattices, yielding a detailed match between theory and experiment.

cond-mat.mes-hall↗

arXiv2020

Gate-tunable two-dimensional superlattices in graphene

We report an efficient technique to induce gate-tunable two-dimensional superlattices in graphene by the combined action of a back gate and a few-layer graphene patterned bottom gate complementary to existing methods. The patterned gates in our approach can be easily fabricated and implemented in van der Waals stacking procedures allowing flexible use of superlattices with arbitrary geometry. In transport measurements on a superlattice with lattice constant $a=40$ nm well pronounced satellite Dirac points and signatures of the Hofstadter butterfly including a non-monotonic quantum Hall response are observed. Furthermore, the experimental results are accurately reproduced in transport simulations and show good agreement with features in the calculated band structure. Overall, we present a comprehensive picture of graphene-based superlattices, featuring a broad range of miniband effects, both in experiment and in theoretical modeling. The presented technique is suitable for studying more advanced geometries which are not accessible by other methods.

cond-mat.mes-hall↗

arXiv2018

Commensurability Oscillations in One-Dimensional Graphene Superlattices

We report the experimental observation of commensurability oscillations (COs) in 1D graphene superlattices. The widely tunable periodic potential modulation in hBN encapsulated graphene is generated via the interplay of nanopatterned few layer graphene acting as a local bottom gate and a global Si back gate. The longitudinal magneto-resistance shows pronounced COs, when the sample is tuned into the unipolar transport regime. We observe up to six CO minima, providing evidence for a long mean free path despite the potential modulation. Comparison to existing theories shows that small angle scattering is dominant in hBN/graphene/hBN heterostructures. We observe robust COs persisting to temperature exceeding $T=150$ K. At high temperatures, we find deviations from the predicted $T$-dependence, which we ascribe to electron-electron scattering.

cond-mat.mes-hall↗

arXiv2017

Few-layer graphene patterned bottom gates for van der Waals heterostructures

We introduce a method of local gating for van der Waals heterostructures, employing a few-layer graphene patterned bottom gate. Being a member of the 2D material family, few-layer graphene adapts perfectly to the commonly used stacking method. Its versatility regarding patterning as well as its flatness make it an ideal candidate for experiments on locally gated 2D materials. Moreover, in combination with ultra-thin hexagonal boron nitride as an insulating layer, sharp potential steps can be created and the quality of the investigated 2D material can be sustained. To underline the good feasibility and performance, we show results on transport experiments in periodically modulated graphene- boron nitride heterostructures, where the charge carrier density is tuned via locally acting patterned few layer graphene bottom gates and a global back gate.

cond-mat.mes-hall↗

arXiv2015

Ballistic transport in graphene antidot lattices

Graphene samples can have a very high carrier mobility if influences from the substrate and the environment are minimized. Embedding a graphene sheet into a heterostructure with hexagonal boron nitride (hBN) on both sides was shown to be a particularly efficient way of achieving a high bulk mobility. Nanopatterning graphene can add extra damage and drastically reduce sample mobility by edge disorder. Preparing etched graphene nanostructures on top of an hBN substrate instead of SiO2 is no remedy, as transport characteristics are still dominated by edge roughness. Here we show that etching fully encapsulated graphene on the nanoscale is more gentle and the high mobility can be preserved. To this end, we prepared graphene antidot lattices where we observe magnetotransport features stemming from ballistic transport. Due to the short lattice period in our samples we can also explore the boundary between the classical and the quantum transport regime.

cond-mat.mes-hall↗

arXiv2014

Towards superlattices: Lateral bipolar multibarriers in graphene

We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge carrier density disparities, enabling the investigation of transport properties either in the unipolar (nn') or the bipolar (np') regime. In the latter pronounced single- and multibarrier Fabry-Perot (FP) resonances occur. We present measurements of different devices with different numbers of top gate stripes and spacings. The data are highly consistent with a phase coherent ballistic tight binding calculation and quantum capacitance model, whereas a superlattice effect and modification of band structure can be excluded.

cond-mat.mes-hall↗

arXiv2013

Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

We present results of non-local and three terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees Celsius for 15 minutes in vacuum. The values of spin relaxation length L_s and spin relaxation time tau_s obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant D_s and charge diffusion constant D_c can be resolved by investigating the temperature dependence of the g-factor, which is consistent with a model for paramagnetic magnetic moments.

cond-mat.mes-hall↗