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Andrei Isichenko

Publications and source records attributed to Andrei Isichenko.

20 records · Page 2Linked to original sources

Mechanisms of Spatiotemporal Mode-Locking

Mode-locking is a process in which different modes of an optical resonator establish, through nonlinear interactions, stable synchronization. This self-organization underlies light sources that enable many modern scientific applications, such as ultrafast and high-field optics and frequency combs. Despite this, mode-locking has almost exclusively referred to self-organization of light in a single dimension - time. Here we present a theoretical approach, attractor dissection, for understanding three-dimensional (3D) spatiotemporal mode-locking (STML). The key idea is to find, for each distinct type of 3D pulse, a specific, minimal reduced model, and thus to identify the important intracavity effects responsible for its formation and stability. An intuition for the results follows from the 'minimum loss principle,' the idea that a laser strives to find the configuration of intracavity light that minimizes loss (maximizes gain extraction). Through this approach, we identify and explain several distinct forms of STML. These novel phases of coherent laser light have no analogues in 1D and are supported by experimental measurements of the three-dimensional field, revealing STML states comprising more than $10^7$ cavity modes. Our results should facilitate the discovery and understanding of new higher-dimensional forms of coherent light which, in turn, may enable new applications.

physics.optics

Capacitively-Induced Free-Carrier Effects in Nanoscale Silicon Waveguides for Electro-Optic Modulation

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide, and by measuring the electro-optic behavior of ring resonators, we characterize the cladding-dependent and capacitively-induced free-carrier effects in each of these waveguides. By comparing our measured data with simulation results, we confirm that the observed voltage dependencies of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguide, and we show for the first time how strongly these effects depend on the cladding material which comes into contact with the silicon waveguide. Additionally, the waveguide loss is found to have a particularly high sensitivity to the applied voltage, and may therefore find use in a wide range of applications which require low- or high-loss propagation. Collectively, these phenomena may be incorporated into more complex waveguide designs in the future to create high-efficiency electro-optic modulators.

physics.optics