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Andrej Denisenko

Publications and source records attributed to Andrej Denisenko.

At least 37 records · Page 2Linked to original sources

Mapping single electron spins with magnetic tomography

Mapping the positions of single electron spins is a highly desired capability for applications such as nanoscale magnetic resonance imaging and quantum network characterization. Here, we demonstrate a method based on rotating an external magnetic field to identify the precise location of single electron spins in the vicinity of a quantum spin sensor. We use a nitrogen-vacancy center in diamond as a quantum sensor and modulate the dipolar coupling to a proximate electron spin in the crystal by varying the magnetic field vector. The modulation of the dipolar coupling contains information on the coordinates of the spin, from which we extract its position with an uncertainty of 0.9\,Å. We show that the method can be used to locate electron spins with nanometer precision up to 10\,nm away from the sensor. We discuss the method's applicability to mapping hyperfine coupled electron spins, and show it may be applied to locating nitroxide radicals. The magnetic tomography method can be utilized for distance measurements for studying the structure of individual molecules.

cond-mat.mes-hall↗

High Fidelity Control of a Nitrogen-Vacancy Spin Qubit at Room Temperature using the SMART Protocol

A practical implementation of a quantum computer requires robust qubits that are protected against their noisy environment. Dynamical decoupling techniques have been successfully used in the past to offer protected high-fidelity gate operations in negatively-charged Nitrogen-Vacancy (NV-) centers in diamond, albeit under specific conditions with the intrinsic nitrogen nuclear spin initialised. In this work, we show how the SMART protocol, an extension of the dressed-qubit concept, can be implemented for continuous protection to offer Clifford gate fidelities compatible with fault-tolerant schemes, whilst prolonging the coherence time of a single NV- qubit at room temperature. We show an improvement in the average Clifford gate fidelity from $0.940\pm0.005$ for the bare qubit to $0.993\pm0.002$ for the SMART qubit, with the nitrogen nuclear spin in a random orientation. We further show a $\gtrsim$ 30 times improvement in the qubit coherence times compared to the bare qubit.

quant-ph↗

Microscopic study of optically-stable, coherent color centers in diamond generated by high-temperature annealing

Single color centers in solid have emerged as promising physical platforms for quantum information science. Creating these centers with excellent quantum properties is a key foundation for further technological developments. In particular, the microscopic understanding of the spin bath environments is the key to engineer color centers for quantum control. In this work, we propose and demonstrate a distinct high-temperature annealing (HTA) approach for creating high-quality nitrogen vacancy (NV) centers in implantation-free diamonds. Simultaneously using the created NV centers as probes for their local environment we verify that no damage was microscopically induced by the HTA. Nearly all single NV centers created in ultra-low-nitrogen-concentration membranes possess stable and Fourier-transform-limited optical spectra. Furthermore, HTA strongly reduces noise sources naturally grown in ensemble samples, and leads to more than three-fold improvements of decoherence time and sensitivity. We also verify that the vacancy activation and defect reformation, especially H3 and P1 centers, can explain the reconfiguration between spin baths and color centers. This novel approach will become a powerful tool in vacancy-based quantum technology.

cond-mat.mes-hall↗

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon interfaces. We demonstrate here nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution based on cavity quantum electrodynamics.

quant-ph↗

Zero-field magnetometry using hyperfine-biased nitrogen-vacancy centers near diamond surfaces

Shallow nitrogen-vacancy (NV) centers in diamond are promising for nano-magnetometry for they can be placed proximate to targets. To study the intrinsic magnetic properties, zero-field magnetometry is desirable. However, for shallow NV centers under zero field, the strain near diamond surfaces would cause level anti-crossing between the spin states, leading to clock transitions whose frequencies are insensitive to magnetic signals. Furthermore, the charge noises from the surfaces would induce extra spin decoherence and hence reduce the magnetic sensitivity. Here we demonstrate that the relatively strong hyperfine coupling (130 MHz) from a first-shell 13C nuclear spin can provide an effective bias field to an NV center spin so that the clock-transition condition is broken and the charge noises are suppressed. The hyperfine bias enhances the dc magnetic sensitivity by a factor of 22 in our setup. With the charge noises suppressed by the strong hyperfine field, the ac magnetometry under zero field also reaches the limit set by decoherence due to the nuclear spin bath. In addition, the 130 MHz splitting of the NV center spin transitions allows relaxometry of magnetic noises simultaneously at two well-separated frequencies (~2.870 +/- 0.065 GHz), providing (low-resolution) spectral information of high-frequency noises under zero field. The hyperfine-bias enhanced zero-field magnetometry can be combined with dynamical decoupling to enhance single-molecule magnetic resonance spectroscopy and to improve the frequency resolution in nanoscale magnetic resonance imaging.

cond-mat.mes-hall↗

Lateral diffusion of phospholipids in artificial cell membranes measured by single shallow NV centers

We measure diffusion of organic molecules located a few nanometers from the diamond surface. To study molecular diffusion, we perform local detection of nuclear magnetic resonance, based on single shallow Nitrogen-Vacancy (NV) centers in diamond. Specifically, we demonstrate measurements of translational diffusion coefficient of phospholipids in an artificial cell membrane by employing correlation spectroscopy. An analysis of correlation decay curves using different diffusion models shows, that a simple 2D diffusion model gives satisfactory diffusion coefficients, although the choice of the model affects the extracted numbers. We find significant differences among the diffusion coefficients measured by different single NV centers, which we attribute to local heterogeneities of the lipid layers, likely caused by the supporting diamond substrate.

cond-mat.mes-hall↗

ODMR on Single TR12 Centers in Diamond

Point defects in insulators are considered promising candidates for quantum technologies. In keeping with this, we present an extensive optically-detected magnetic resonance (ODMR) study at room-temperature on individual TR12 centers (ZPL at 471nm), which are known in the literature since 1956. In this work we found TR12 centers to show a strong ODMR signal under optical saturation. These observed defects were created in high-purity epitaxial layers of diamond by standard irradiation and annealing processes. From the analysis of the ODMR spectra along with antibunching measurements and coherent population trapping, we proposed the energy level structure of TR12 center, consisting of ground state and excited state singlets complemented by a metastable triplet in between. Mapping the fluorescence dependence of the center on an external magnetic field and on the polarization of laser excitation, allows us to identify twelve inequivalent orientations for TR12 centers. This includes the exact orientations of the dipole transition and the triplet axes in the diamond lattice in full agreement with the results of modeling based on the proposed level structure. Furthermore, a static Jahn-Teller effect was detected through fluorescence switching between two levels at low optical excitation power, directly observable in the real-time fluorescence signal for various polarization of laser excitation. Based on these results we discuss the prospects of the TR12 center in diamond for quantum sensing and quantum information processing.

physics.optics↗

High resolution, High contrast optical interface for defect qubits

Point defects in crystals provide important building blocks for quantum applications. To initialize, control, and read-out their quantum states, an efficient optical interface for addressing defects with photons is required. However, conventional confocal fluorescence microscopy with high refractive index crystals has limited photon collection efficiency and spatial resolution. Here, we demonstrate high resolution, high contrast imaging for defects qubits using microsphere-assisted confocal microscopy. A microsphere provides an excellent optical interface for point defects with a magnified virtual image that improves spatial resolution up to ~$λ$/5 as well as an optical signal-to-noise ratio by four times. These features enable individual optical addressing of single photons and single spins of spatially-unresolved defects in conventional confocal microscopy with improved signal contrast. The combined optical tweezers show the possibility of positioning or scanning the microspheres for deterministic coupling and wide-field imaging of defects. The approach does not require any complicated fabrication and additional optical system but uses simple micro-optics off-the-shelf. From these distinctive advantages of the microspheres, our approach can provide an efficient way for imaging and addressing closely-spaced defects with higher resolution and sensitivity.

quant-ph↗

Nanoscale electric-field imaging based on a quantum sensor and its charge-state control under ambient condition

Nitrogen-vacancy (NV) centers in diamond can be used as quantum sensors to image the magnetic field with nanoscale resolution. However, nanoscale electric-field mapping has not been achieved so far because of the relatively weak coupling strength between NV and electric field. Using individual shallow NVs, here we succeeded to quantitatively image the contours of electric field from a sharp tip of a qPlus-based atomic force microscope (AFM), and achieved a spatial resolution of ~10 nm. Through such local electric fields, we demonstrated electric control of NV's charge state with sub-5 nm precision. This work represents the first step towards nanoscale scanning electrometry based on a single quantum sensor and may open up new possibility of quantitatively mapping local charge, electric polarization, and dielectric response in a broad spectrum of functional materials at nanoscale.

cond-mat.mes-hall↗

Ultra-sensitive hybrid diamond nanothermometer

Nitrogen-vacancy (NV) centers in diamond are promising quantum sensors for their long spin coherence time under ambient conditions. However, their spin resonances are relatively insensitive to non-magnetic parameters such as temperature. A magnetic-nanoparticle-nanodiamond hybrid thermometer, where the temperature change is converted to the magnetic field variation near the Curie temperature, was demonstrated to have enhanced temperature sensitivity (11 mK Hz^{-1/2}) [Phys. Rev. X 8, 011042 (2018)], but the sensitivity was limited by the large spectral broadening of ensemble spins in nanodiamonds. To overcome this limitation, here we showed an improved design of a hybrid nanothermometer using a single NV center in a diamond nanopillar coupled with a single magnetic nanoparticle of copper-nickel alloy, and demonstrated a temperature sensitivity of 76 uK Hz^{-1/2}. This hybrid design enabled detection of 2 millikelvins temperature changes with temporal resolution of 5 milliseconds. The ultra-sensitive nanothermometer offers a new tool to investigate thermal processes in nanoscale systems.

quant-ph↗

Single spin resonance in a van der Waals embedded paramagnetic defect

Spins constitute a group of quantum objects forming a key resource in modern quantum technology. Two-dimensional (2D) van der Waals materials are of fundamental interest for studying nanoscale magnetic phenomena. However, isolating singular paramagnetic spins in 2D systems is challenging. We report here on a quantum emitting source embedded within hexgonal boron nitride (h-BN) exhibiting optical magnetic resonance (ODMR). We extract an isotropic $g$ factor close to 2 and derive an upper bound for a zero field splitting (ZFS) ($\leq$ 4 MHz). Photoluminescence (PL) behavior under temperature cycling using different excitations is presented, assigning probable zero phonon lines (ZPLs) / phonon side band (PSBs) to emission peaks, compatible with h-BN's phonon density of states, indicating their intrinsic nature. Narrow and inhomogeneous broadened ODMR lines differ significantly from monoatomic vacancy defect lines known in literature. We derive a hyperfine coupling of around 10 MHz. Its angular dependence indicates an unpaired electron in an out-of-plane $π$-orbital, probably originating from an additional substitutional carbon impurity or other low mass atom. We determine the spin relaxation time $T_1$ to be around 17 $μ$s.

cond-mat.mes-hall↗

Robust and accurate electric field sensing with solid state spin ensembles

Electron spins in solids constitute remarkable quantum sensors. Individual defect centers in diamond were used to detect individual nuclear spins with nanometer scale resolution, and ensemble magnetometers rival SQUID and vapor cell magnetometers when taking into account room temperature operation and size. NV center spins can also detect electric field vectors, despite their weak coupling to electric fields. %even that of an isolated fundamental charge, despite their weak coupling to electric fields. Here, we employ ensembles of NV center spins to measure macroscopic AC electric vector fields with high precision. We utilize low strain, $^{12}$C enriched diamond to achieve maximum sensitivity and tailor the spin Hamiltonian via proper magnetic field adjustment to map out the AC electric field strength and polarization and arrive at refined electric field coupling constants. For high precision measurements we combine classical lock-in detection with aspects from quantum phase estimation for effective suppression of technical noise. Eventually, this enables $t^{-1/2}$ uncertainty scaling of the electric field strength over extended averaging periods, enabling us to reach a sensitivity down to $10^{-7}$ V/$μ$m.

cond-mat.mes-hall↗

Protecting a diamond quantum memory by charge state control

In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the Nitrogen-Vacancy (NV) center in diamond, phosphorous dopants in silicon (Si:P), rare-earth ions in solids and V$_{\text{Si}}$-centers in Silicon-carbide (SiC). The Si:P system has demonstrated, that by eliminating the electron spin of the dopant, its nuclear spins can yield exceedingly long spin coherence times. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 20. Surprisingly, the new charge state allows switching the optical response of single nodes facilitating full individual addressability.

quant-ph↗

Tailoring spin defects in diamond

Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometer positioning accuracy, which is typically achieved by low energy ion implantation. So far, a drawback of this technique is the significant residual implantation-induced damage to the lattice, which strongly degrades the performance of spins in quantum applications. In this letter we show that the charge state of implantation-induced defects drastically influences the formation of lattice defects during thermal annealing. We demonstrate that charging of vacancies localized at e.g. individual nitrogen implantation sites suppresses the formation of vacancy complexes, resulting in a tenfold-improved spin coherence time of single nitrogen-vacancy (NV) centers in diamond. This has been achieved by confining implantation defects into the space charge layer of free carriers generated by a nanometer-thin boron-doped diamond structure. Besides, a twofold-improved yield of formation of NV centers is observed. By combining these results with numerical calculations, we arrive at a quantitative understanding of the formation and dynamics of the implanted spin defects. The presented results pave the way for improved engineering of diamond spin defect quantum devices and other solid-state quantum systems.

cond-mat.mtrl-sci↗

Structural attributes and photo-dynamics of visible spectrum quantum emitters in hexagonal boron nitride

Newly discovered van der Waals materials like MoS$_2$, WSe$_2$, hexagonal boron nitride (h-BN), and recently $\mathrm{C}_2\mathrm{N}$ have sparked intensive research to unveil the quantum behavior associated with their 2D structure. Of great interest are 2D materials that host single quantum emitters. h-BN, with a band gap of 5.95 eV, has been shown to host single quantum emitters which are stable at room temperature in the UV and visible spectral range. In this paper we investigate correlations between h-BN structural features and emitter location from bulk down to the monolayer at room temperature. We demonstrate that chemical etching and ion irradiation can generate emitters in h-BN. We analyze the emitters' spectral features and show that they are dominated by the interaction of their electronic transition with a single Raman active mode of h-BN. Photodynamics analysis reveals diverse rates between the electronic states of the emitter. The emitters show excellent photo stability even under ambient conditions and in monolayers. Comparing the excitation polarization between different emitters unveils a connection between defect orientation and the h-BN hexagonal structure. The sharp spectral features, color diversity, room-temperature stability, long-lived metastable states, ease of fabrication, proximity of the emitters to the environment, outstanding chemical stability, and biocompatibility of h-BN provide a completely new class of systems that can be used for sensing and quantum photonics applications.

cond-mat.mes-hall↗

Efficient creation of dipolar coupled nitrogen-vacancy spin qubits in diamond

Coherently coupled pairs or multimers of nitrogen-vacancy defect electron spins in diamond have many promising applications especially in quantum information processing (QIP) but also in nanoscale sensing applications. Scalable registers of spin qubits are essential to the progress of QIP. Ion implantation is the only known technique able to produce defect pairs close enough to allow spin coupling via dipolar interaction. Although several competing methods have been proposed to increase the resulting resolution of ion implantation, the reliable creation of working registers is still to be demonstrated. The current limitation are residual radiation-induced defects, resulting in degraded qubit performance as trade-off for positioning accuracy. Here we present an optimized estimation of nanomask implantation parameters that are most likely to produce interacting qubits under standard conditions. We apply our findings to a well-established technique, namely masks written in electron-beam lithography, to create coupled defect pairs with a reasonable probability. Furthermore, we investigate the scaling behavior and necessary improvements to efficiently engineer interacting spin architectures.

cond-mat.mes-hall↗

Development of a high quality thin diamond membrane with embedded nitrogen-vacancy centers for hybrid spin-mechanical quantum systems

Hybrid quantum systems (HQSs) have attracted several research interests in the last years. In this Letter, we report on the design, fabrication, and characterization of a novel diamond architecture for HQSs that consists of a high quality thin circular diamond membrane with embedded near-surface nitrogen-vacancy centers (NVCs). To demonstrate this architecture, we employed the NVCs by means of their optical and spin interfaces as nanosensors of the motion of the membrane under static pressure and in-resonance vibration, as well as the residual stress of the membrane. Driving the membrane at its fundamental resonance mode, we observed coupling of this vibrational mode to the spin of the NVCs by Hahn echo signal. Our realization of this architecture will enable futuristic HQS-based applications in diamond piezometry and vibrometry, as well as spin-mechanical and mechanically mediated spin-spin coupling in quantum information science.

cond-mat.mes-hall↗

Effect of Low-Damage Inductively Coupled Plasma on Shallow NV Centers in Diamond

Near-surface nitrogen-vacancy ({NV}) centers in diamond have been successfully employed as atomic-sized magnetic field sensors for external spins over the last years. A key challenge is still to develop a method to bring NV centers at nanometer proximity to the diamond surface while preserving their optical and spin properties. To that aim we present a method of controlled diamond etching with nanometric precision using an oxygen inductively coupled plasma (ICP) process. Importantly, no traces of plasma-induced damages to the etched surface could be detected by X-ray photoelectron spectroscopy (XPS) and confocal photoluminescence microscopy techniques. In addition, by profiling the depth of NV centers created by 5.0 keV of nitrogen implantation energy, no plasma-induced quenching in their fluorescence could be observed. Moreover, the developed etching process allowed even the channeling tail in their depth distribution to be resolved. Furthermore, treating a 12C isotopically purified diamond revealed a threefold increase in T2 times for NV centers with <4 nm of depth (measured by NMR signal from protons at the diamond surface) in comparison to the initial oxygen-terminated surface.

cond-mat.mtrl-sci↗