arXiv subjects

Andrej Denisenko

Publications and source records attributed to Andrej Denisenko.

39 records · Page 3Linked to original sources

arXiv2014

Nano-engineered Diamond Waveguide as a Robust Bright Platform for Nanomagnetometry Using Shallow Nitrogen Vacancy Centers

Photonic structures in diamond are key to most of its application in quantum technology. Here, we demonstrate tapered nano-waveguides structured directly onto the diamond substrate hosting shallow-implanted nitrogen vacancy (NV) centers. By optimization based on simulations and precise experimental control of the geometry of these pillar-shaped nano-waveguides, we achieve a net photon flux up to ~ $1.7 \cdot 10^6 /s$. This presents the brightest monolithic bulk diamond structure based on single NV centers so far. We observe no impact on excited state lifetime and electronic spin dephasing time ($T_2$) due to the nanofabrication process. Possessing such high brightness with low background in addition to preserved spin quality, this geometry can improve the current nanomagnetometry sensitivity ~ 5 times. In addition, it facilitates a wide range of diamond defects-based magnetometry applications. As a demonstration, we measure the temperature dependency of $T_1$ relaxation time of a single shallow NV center electronic spin. We observe the two-phonon Raman process to be negligible in comparison to the dominant two-phonon Orbach process.

cond-mat.mes-hall↗

arXiv2014

Coherent control of single spins in silicon carbide at room temperature

Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fabrication techniques. Here we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence time under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.

cond-mat.mes-hall↗

arXiv2012

Augmenting the spin properties of shallow implanted NV-centers by CVD-overgrowth

The controlled scaling of diamond defect center based quantum registers relies on the ability to position NVs with high spatial resolution. Using ion implantation, shallow (< 10 nm) NVs can be placed with accuracy below 20nm, but generally show reduced spin properties compared to bulk NVs. We demonstrate the augmentation of spin properties for shallow implanted NV centers using an overgrowth technique. An increase of the coherence times up to an order of magnitude (T_2 = 250 μs) was achieved. Dynamic decoupling of defects spins achieves ms decoherence times. The study marks a further step towards achieving strong coupling among defects positioned with nm precision.

cond-mat.mtrl-sci↗