arXiv subjects

Andrey Bakin

Publications and source records attributed to Andrey Bakin.

4 recordsLinked to original sources

arXiv2022

Assessment of sub-sampling schemes for compressive nano-FTIR imaging

Nano-FTIR imaging is a powerful scanning-based technique at nanometer spatial resolution which combines Fourier transform infrared spectroscopy (FTIR) and scattering-type scanning near-field optical microscopy (s-SNOM). However, recording large spatial areas with nano-FTIR is limited by long measurement times due to its sequential data acquisition. Several mathematical approaches have been proposed to tackle this problem. All of them have in common that only a small fraction of randomly chosen measurements is required. However, choosing the fraction of measurements in a random fashion poses practical challenges for scanning procedures and does not lead to time savings as large as desired. We consider different, practically relevant sub-sampling schemes assuring a faster acquisition. It is demonstrated that results for almost all considered sub-sampling schemes, namely original Lissajous, triangle Lissajous, and random reflection sub-sampling, at a sub-sampling rate of 10%, are comparable to results when using a random sub-sampling of 10%. This implies that random sub-sampling is not required for efficient data acquisition.

physics.optics↗

arXiv2019

Plasma Profiling Time-of-Flight Mass Spectrometry for Fast Elemental Analysis of Semiconductor Structures with Depth Resolution in the Nanometer Range

Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest, as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al., PP-TOFMS can be used to obtain the composition in the structures for modern field effect transistors [1]. There, the results were compared to conventional SIMS measurements. In the present study, we compare PP-TOFMS measurements of an Al-/In-/GaN quantum well multi stack to established micro- and nano-analysis techniques like cathodoluminescence (CL), scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). We show that PP-TOFMS is able to resolve the layer structure of the sample even more than 500 nm deep into the sample and allows the determination of a relative elemental composition with an accuracy of about 10 rel. %. Therefore, it is an extremely rapid alternative method to obtain semiconductor elemental depth profiles without expensive and time consuming sample preparation as it is needed for TEM. Besides, PP-TOFMS offers better depth resolution and more elemental information than for example electrochemical capacitance-voltage (ECV), as the acquisition of all elements occurs in parallel and not only electrically (ECV) or optically (CL) active elements are observed.

physics.app-ph↗

arXiv2018

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC

In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of defect-free, ultra-smooth and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-freestanding monolayer and bilayer graphene (QFMLG and QFBLG) by hydrogen intercalation. AFM, scanning tunneling microscopy (STM), Raman spectroscopy and electronic transport measurements underline the excellent homogeneity of the resulting quasi-freestanding layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both μm- and mm scales.

cond-mat.mtrl-sci↗

arXiv2017

Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer

We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation growth method demonstrates that the key principle to suppress this behavior is the uniform nucleation of the buffer layer. In this way, the silicon carbide surface is stabilized such that ultra-flat surfaces can be conserved during graphene growth on a large variety of silicon carbide substrate surfaces. The analysis of the experimental results describes different growth modes which extend the current understanding of epitaxial graphene growth by emphasizing the importance of buffer layer nucleation and critical mass transport processes.

cond-mat.mtrl-sci↗