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Angelika Knothe

Publications and source records attributed to Angelika Knothe.

At least 19 recordsLinked to original sources

Continuous correlated states and dual-flatness in a moir\'e heterostructure

Many-body effects in condensed matter yield novel quantum states when the electronic density of states is enhanced. A vivid example is flat bands, which suppress kinetic energy and let interactions dominate, when they are filled with an integer number of electrons in moire systems. Yet flat bands and commensurate fillings are not the only conditions for correlated phenomena. Situations may occur where the band structure develops locally enhanced density of states, leading to strong correlations even at non-integer fillings, although such cases often yield pseudogaps that make detection elusive. Here we demonstrate that small-angle twisted monolayer-bilayer graphene combines moire-induced global flat band and additional local band flattening. Their coexistence allows direct comparison of correlated effects. The global route stabilizes commensurate states, while the local mechanism produces nearly flat bands, lifting degeneracy and generating symmetry breaking at non-integer fillings, yet without opening a global gap. Because there is no global gapped signature, the system remains metallic, but the effect reveals itself in anomalous Hall responses, signaling time-reversal symmetry breaking and valley polarization. Our results demonstrate dual-flatness as a guiding principle, extending moire physics beyond commensurate fillings and identifying topological transport as a probe of gapless correlated metals.

cond-mat.str-el

Anisotropic transport in ballistic bilayer graphene cavities

Closing the gap between ray tracing simulations and experimentally observed electron jetting in bilayer graphene (BLG), we study all-electronic, gate-defined BLG cavities using tight-binding simulations and semiclassical equations of motion. Such cavities offer a rich playground to investigate anisotropic electron transport due to the trigonally warped Fermi surfaces. In this work, we achieve two things: First, we verify the existence of triangular modes (as predicted by classical ray tracing calculations) in the quantum solutions of closed circular BLG cavities. Then, we explore signatures of said triangular modes in transport through open BLG cavities connected to leads. We show that the triangular symmetry translates into anisotropic transport and present an optimal setup for experimental detection of the triangular modes as well as for controlled modulation of transport in preferred directions.

cond-mat.mes-hall

Tunable Kondo effect in a bilayer graphene quantum channel

The interaction between itinerant electrons and localized spins is key to a wide range of electronic phenomena. Of particular interest is the regime where the interacting electrons exhibit both spin and valley degeneracy, resulting in SU(4) Kondo physics. However, this regime is challenging to realize in typical mesoscopic systems because it requires a strong interaction between electrons, resulting in a Kondo temperature ($T_\mathrm{K}$) significantly larger than the spin and valley splittings. Here, we present conductance measurements of a quantum point contact (QPC) in bilayer graphene (BLG). Beyond the expected quantized conductance plateaus, which reflect spin and valley degeneracy, we observe an additional subband, known as `0.7 anomaly' exhibiting signatures of Kondo physics and a $T_\mathrm{K}$ ranging from approximately 0.5 up to 2.4 K at zero magnetic field, corresponding to Kondo energies between 40 and 200 $\mu$eV. Given that the spin-orbit splitting in BLG is between 40 and 80 $\mu$eV, we argue that these results are consistent with a transition between four-fold degenerate SU(4) and two-fold degenerate spin-valley locked SU(2) Kondo effects. Furthermore, we break the valley degeneracy of the lowest subband by an out-of-plane magnetic field and show that Kondo signatures remain present, indicating a transition from SU(4) to a valley-polarized SU(2) Kondo effect, and showing the versatility of BLG QPCs for exploring many-body effects.

cond-mat.mes-hall

Tunable spin-orbit splitting in bilayer graphene/WSe$_2$ quantum devices

Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies, such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) complicates spin and valley manipulation. Integrating BLG with transition metal dichalcogenides (TMDs) enhances the SOC via proximity effects. While this enhancement has been demonstrated in 2D-layered structures, 1D and 0D nanostructures in BLG/TMD remain unrealized, with open questions regarding SOC strength and tunability. Here, we investigate quantum point contacts and quantum dots in two BLG/WSe$_2$ heterostructures with different stacking orders. Across multiple devices, we reproducibly demonstrate spin-orbit splitting up to 1.5 meV - more than 1 order of magnitude higher than in pristine BLG. Furthermore, we show that the induced SOC can be tuned in situ from its maximum value to near-complete suppression via the perpendicular electric field. This enhancement and in situ tunability establish the SOC as a control mechanism for dynamic spin and valley manipulation.

cond-mat.mes-hall

Coherent suppression and dephasing-induced reentrance of high harmonics in gapped Dirac materials

High-harmonic generation in solids by intense laser pulses provides a fascinating platform for studying material properties and ultra-fast electron dynamics, where its coherent character is a central aspect. Using the semiconductor Bloch equations, we uncover a mechanism suppressing the high harmonic spectrum arising from the coherent superposition of intra- vs. inter-band contributions. We provide evidence for the generality of this phenomenon by extensive numerical simulations exploring the parameter space in gapped systems with both linear dispersion, such as for massive Dirac Fermions, and with quadratic dispersion, as e.g. for bilayer graphene. Moreover, we demonstrate that, upon increasing dephasing, destructive interference between intra- and inter-band contributions is lifted. This leads to reentrant behavior of suppressed high harmonics, i.e. a crossover from the characteristic spectral "shoulder" to a slowly decaying signal involving much higher harmonics. We supplement our numerical observations with analytical results for the one-dimensional case.

cond-mat.mes-hall

Adhesion and Reconstruction of Graphene/Hexagonal Boron Nitride Heterostructures: A Quantum Monte Carlo Study

We investigate interlayer adhesion and relaxation at interfaces between graphene and hexagonal boron nitride (hBN) monolayers in van der Waals heterostructures. The adhesion potential between graphene and hBN is calculated as a function of local lattice offset using diffusion quantum Monte Carlo methods, which provide an accurate treatment of van der Waals interactions. Combining the adhesion potential with elasticity theory, we determine the relaxed structures of graphene and hBN layers at interfaces, finding no metastable structures. The adhesion potential is well described by simple Lennard-Jones pair potentials that we parameterize using our quantum Monte Carlo data. Encapsulation of graphene between near-aligned crystals of hBN gives rise to a moir\'{e} pattern whose period is determined by the misalignment angle between the hBN crystals superimposed over the moir\'{e} superlattice previously studied in graphene on an hBN substrate. We model minibands in such supermoir\'{e} superlattices and find them to be sensitive to a 180$^\circ$ rotation of one of the encapsulating hBN crystals. We find that monolayer and bilayer graphene placed on a bulk hBN substrate and bulk hBN/graphene/bulk hBN systems do not relax to adopt a common lattice constant. The energetic balance is much closer for free-standing monolayer graphene/hBN bilayers and hBN/graphene/hBN trilayers. The layers in an alternating stack of graphene and hBN are predicted to strain to adopt a common lattice constant and hence we obtain a new, stable three-dimensional crystal with a unique electronic structure.

cond-mat.mes-hall

Anomalous conductance steps in three-dimensional topological insulator HgTe-based quantum point contacts

We explore electrical transport through a point contact in strained HgTe, a three-dimensional topological insulator. In the absence of a magnetic field $B$, there is no quantization. However, under higher magnetic fields, we observe distinct non-integer conductance steps. Based on numerical tight-binding calculations and a phenomenological Landauer-B\"uttiker approach, we attribute these atypical, non-integer quantized plateaus to significant scattering effects at the point contact.

cond-mat.mes-hall

Extended Hubbard model describing small multi-dot arrays in bilayer graphene

We set up and parametrize a Hubbard model for interacting quantum dots in bilayer graphene and study double dots as the smallest multi-dot system. We demonstrate the tunability of the spin and valley multiplets, Hubbard parameters, and effective exchange interaction by electrostatic gate potentials and the magnetic field. Considering both the long- and short-range Coulomb interaction, we map out the various spin and valley multiplets and calculate their energy gaps for different dot sizes and inter-dot separations. For half-filling and large valley splittings, we derive and parametrize an effective Heisenberg model for the quantum dot spins.

cond-mat.mes-hall

Tuning confined states and valley g-factors by quantum dot design in bilayer graphene

Electrostatically confined quantum dots in bilayer graphene have shown potential as building blocks for quantum technologies. To operate the dots, e.g., as qubits, a precise understanding and control of the confined states and their properties is required. Herein, a large-scale numerical characterization of confined quantum states in bilayer graphene dots is performed over an extensive range of gate-tunable parameters such as the dot size, depth, shape, and the bilayer graphene gap. The dot states' orbital degeneracy, wave function distribution, and valley g-factor are established and the parametric dependencies to achieve different regimes are provided. It is found that the dot states are highly susceptible to gate-dependent confinement and material parameters, enabling efficient tuning of confined states and valley g-factor modulation by quantum dot design.

cond-mat.mes-hall

Steering internal and outgoing electron dynamics in bilayer graphene cavities by cavity design

Ballistic, gate-defined devices in two-dimensional materials offer a platform for electron optics phenomena influenced by the material's properties and gate control. We study the ray trajectory dynamics of all-electronic, gate-defined cavities in bilayer graphene to establish how distinct regimes of the internal and outgoing charge carrier dynamics can be tuned and optimized by the cavity shape, symmetry, and parameter choice, e.g., the band gap and the cavity orientation. In particular, we compare the dynamics of two cavity shapes, o'nigiri, and Limaçon cavities, which fall into different symmetry classes. We demonstrate that for stabilising regular, internal cavity modes, such as periodic and whispering gallery orbits, it is beneficial to match the cavity shape to the bilayer graphene Fermi line contour. Conversely, a cavity of a different symmetry than the material dispersion allows one to determine preferred emission directionalities in the emitted far-field.

cond-mat.mes-hall

Electron quantum optics in graphene

In the last decade, graphene has become an exciting platform for electron optical experiments, in many aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states, \eg, snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers.

cond-mat.mes-hall

Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots

We report on a detailed investigation of the shell-filling sequence in electrostatically defined elliptic bilayer graphene quantum dots (QDs) in the regime of low charge carrier occupation, $N \leq 12$, by means of magnetotransport spectroscopy and numerical calculations. We show the necessity of including both short-range electron-electron interaction and wavefunction-dependent valley g-factors for understanding the overall fourfold shell-filling sequence. These factors lead to an additional energy splitting at half-filling of each orbital state and different energy shifts in out-of-plane magnetic fields. Analysis of 31 different BLG QDs reveals that both valley g-factor and electron-electron interaction induced energy splitting increase with decreasing QD size, validating theory. However, we find that the electrostatic charging energy of such gate-defined QDs does not correlate consistently with their size, indicating complex electrostatics. These findings offer significant insights for future BLG QD devices and circuit designs.

cond-mat.mes-hall

Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking

We theoretically investigate 3D layered crystals of alternating graphene and hBN layers with different symmetries. Depending on the hopping parameters between the graphene layers, we find that these synthetic 3D materials can feature semimetallic, gapped, or Weyl semimetal phases. Our results demonstrate that 3D crystals stacked from individual 2D materials represent a synthetic materials class with emergent properties different from their constituents.

cond-mat.mtrl-sci

Gate-tunable regular and chaotic electron dynamics in ballistic bilayer graphene cavities

The dispersion of any given material is crucial for its charge carriers' dynamics. For all-electronic, gate-defined cavities in gapped bilayer graphene, we developed a trajectory-tracing algorithm aware of the material's electronic properties and details of the confinement. We show how the anisotropic dispersion of bilayer graphene induces chaotic and regular dynamics depending on the gate voltage, despite the high symmetry of the circular cavity. Our results demonstrate the emergence of non-standard fermion optics solely due to anisotropic material characteristics.

cond-mat.mes-hall

Engineering of the topological magnetic moment of electrons in bilayer graphene using strain and electrical bias

Topological properties of electronic states in multivalley two-dimensional materials, such as mono- and bilayer graphene, or thin films of rhombohedral graphite, give rise to various unusual magneto-transport regimes. Here, we investigate the tunability of the topological magnetic moment (related to the Berry curvature) of electronic states in bilayer graphene using strain and vertical bias. We show how one can controllably vary the valley $g$-factor of the band-edge electrons, $g_v^*$, across the range $10 < |g_v^*| < 200$, and we discuss the manifestations of the topological magnetic moment in the anomalous contribution towards the Hall conductivity and in the Landau level spectrum.

cond-mat.mes-hall

Kagomé network of chiral miniband-edge states in double-aligned graphene-hexagonal boron nitride structures

Twistronic heterostructures have recently emerged as a new class of quantum electronic materials with properties determined by the twist angle between the adjacent two-dimensional materials. Here we study moiré superlattice minibands in graphene (G) encapsulated in hexagonal boron nitride (hBN) with an almost perfect alignment with both the top and bottom hBN crystals. We show that, for such an orientation of the unit cells of the hBN layers that locally breaks inversion symmetry of the graphene lattice, the hBN/G/hBN structure features a Kagomé network of topologically protected chiral states with energies near the miniband edge, propagating along the lines separating the areas with different miniband Chern numbers.

cond-mat.mes-hall

Probing two-electron multiplets in bilayer graphene quantum dots

We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $\approx 0.4 - 0.8$ meV from orbital anti-symmetric states. The symmetric multiplet exhibits an additional energy splitting of its 6 states of $\approx 0.15 - 0.5$ meV due to lattice scale interactions. The experimental observations are supported by theoretical calculations, which allow to determine that inter-valley scattering and 'current-current' interaction constants are of the same magnitude in BLG.

cond-mat.mes-hall

Shell Filling and Trigonal Warping in Graphene Quantum Dots

Transport measurements through a few-electron circular quantum dot in bilayer graphene display bunching of the conductance resonances in groups of four, eight and twelve. This is in accordance with the spin and valley degeneracies in bilayer graphene and an additional threefold 'minivalley degeneracy' caused by trigonal warping. For small electron numbers, implying a small dot size and a small displacement field, a two-dimensional s- and then a p-shell are successively filled with four and eight electrons, respectively. For electron numbers larger than twelve, as the dot size and the displacement field increase, the single-particle ground state evolves into a three-fold degenerate minivalley ground state. A transition between these regimes is observed in our measurements and can be described by band-structure calculations. Measurements in magnetic field confirm Hund's second rule for spin filling of the quantum dot levels, emphasizing the importance of exchange interaction effects.

cond-mat.mes-hall