arXiv subjects

Anindya Das

Publications and source records attributed to Anindya Das.

50 records · Page 3Linked to original sources

arXiv2018

Localization physics in graphene Moire superlattices

Non-trivial Berry phase of graphene leads to unusual quantum correction to the conductivity. Berry phase of pi in single layer graphene (SLG) and 2pi in bi-layer graphene (BLG) is expected to reveal weak anti-localization (WAL) and weak localization (WL), respectively. However, experimentally both WAL and WL have been observed in graphene devices depending on the strength of different scattering mechanisms. Graphene superlattice having multiple Dirac cones is expected to exhibit pi to 2pi Berry phase transition from primary Dirac cone (PDC) to cloned Dirac cone (CDC). However, its effect on localization physics has not been explored yet. In this letter we present the magneto-conductance study in a hexagonal Boron-nitride (hBN)-graphene moire superlattice. Our results reveal a transition from WAL at PDC to WL at CDC in a single device by tuning the Fermi energy. The transition is supported by the quantum oscillation measurements showing a shift of pi phase from PDC to CDC and corresponding theoretical calculation capturing the Berry phase transition. Thus, our studies on localization physics in graphene superlattice pave the way to understand the carrier dynamics at multiple Dirac cones.

cond-mat.mes-hall↗

arXiv2017

Facile Algebraic Representation of a Novel Quaternary Logic

In this work, a novel quaternary algebra has been proposed that can be used to implement an arbitrary quaternary logic function in more than one systematic ways. The proposed logic has evolved from and is closely related to the Boolean algebra for binary domain; yet it does not lack the benefits of a higher-radix system. It offers seamless integration of the binary logic functions and expressions through a set of transforms and allows any binary logic simplification technique to be applied in quaternary domain. Since physical realization of the operators defined in this logic has recently been reported, it has become very important to have a well-defined algebra that will facilitate the algebraic manipulation of the novel quaternary logic and aid in designing various complex logic circuits. Therefore, based on our earlier works, here we describe the complete algebraic representation of this logic for the first time. The efficacy of the logic has been shown by designing and comparing several common logic circuits with existing designs in both binary and quaternary domain.

cs.AR↗

arXiv2017

Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions

We report an observation of conductance fuctuations (CFs) in the bipolar regime of quantum hall (QH) plateaus in graphene (p-n-p/n-p-n) devices. The CFs in the bipolar regime are shown to decrease with increasing bias and temperature. At high temperature (above 7 K) the CFs vanishes completely and the flat quantized plateaus are recovered in the bipolar regime. The values of QH plateaus are in theoretical agreement based on full equilibration of chiral channels at the p-n junction. The amplitude of CFs for different filling factors follows a trend predicted by the random matrix theory. Although, there are mismatch in the values of CFs between the experiment and theory but at higher filling factors the experimental values become closer to the theoretical prediction. The suppression of CFs and its dependence has been understood in terms of time dependent disorders present at the p-n junctions.

cond-mat.mes-hall↗

arXiv2016

Andreev reflection near the Dirac point at Graphene - NbSe2 junction

Despite extensive search for about a decade, specular Andreev reflection is only recently realized in bilayer graphene-superconductor interface. However, the evolution from the typical retro type Andreev reflection to the unique specular Andreev reflection in single layer graphene has not yet been observed. We investigate this transition by measuring the differential conductance at the van der Walls interface of single layer graphene and NbSe2 superconductor. We find that the normalized conductance becomes suppressed as we pass through the Dirac cone via tuning the Fermi level and bias energy, which manifests the transition from retro to non-retro type Andreev reflection. The suppression indicates the blockage of Andreev reflection beyond a critical angle of the incident electron with respect to the normal between the single layer graphene and the superconductor junction. The results are compared with a theoretical model of the corresponding setup.

cond-mat.mes-hall↗

arXiv2016

Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor

Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with A$_g$ symmetry depend much more strongly on concentration of electrons than that of holes, while the phonons with B$_g$ symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving $π$ and $σ$ bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.

cond-mat.mes-hall↗

arXiv2015

Probing 2D Black Phosphorus by Quantum Capacitance Measurements

Two-dimensional materials and their heterostructures have emerged as a new class of materials for not only fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in plane anisotropy makes BP a unique material to make conceptually new type of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here we report the quantum capacitance measurements together with conductance measurements on a hBN protected few layer BP ($\sim$ 6 layer) in a dual gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with the density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature-dependence conductivity. A large asymmetry is observed between the electron and hole side. The asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in the conductance measurements.

cond-mat.mes-hall↗

arXiv2013

The self-actuating InAs nanowire-based nanoelectromechanical Josephson junction

Half a century ago Brian Josephson made a series of striking predictions related to a tunnelling barrier sandwiched between two superconductors. One particular prediction, later became known as the a.c.-Josephson effect, said that under a finite d.c. bias the tunnelling current contains an a.c. supercurrent component, oscillating at microwave frequency. This prediction was experimentally verified through observation of the junction current-voltage characteristics modified by the interaction with the electromagnetic radiation, and direct detection of the microwave radiation emitted from the junction itself. It had also been established that the behaviour of the d.c. current-voltage characteristic is determined by the high-frequency dynamics of the Josephson junction, and can be used to study various systems such as atoms in the electron-spin resonance, optical phonons in high-Tc superconductors, and vibrating Nb molecules. Here we present an InAs nanowire Josephson junction device, where a vibrating nanowire weak link plays the role of a nanoelectromechanical resonator. The flow of the a.c.- Josephson current through the junction enabled actuation and detection of vibrational modes of the resonator by means of simple d.c. transport measurements.

cond-mat.mes-hall↗

arXiv2012

Evidence of Majorana fermions in an Al - InAs nanowire topological superconductor

Majorana fermions are the only fermionic particles that are expected to be their own antiparticles. While elementary particles of the Majorana type were not identified yet, quasi-particles with Majorana like properties, born from interacting electrons in the solid, were predicted to exist. Here, we present thorough experimental studies, backed by numerical simulations, of a system composed of an aluminum superconductor in proximity to an indium arsenide nanowire, with the latter possessing strong spin-orbit coupling. An induced 1d topological superconductor - supporting Majorana fermions at both ends - is expected to form. We concentrate on the characteristics of a distinct zero bias conductance peak (ZBP), and its splitting in energy, both appearing only with a small magnetic field applied along the wire. The ZBP was found to be robustly tied to the Fermi energy over a wide range of system parameters. While not providing a definite proof of a Majorana state, the presented data and the simulations support strongly its existence.

cond-mat.mes-hall↗

arXiv2012

Entangling electrons by splitting Cooper pairs: Two-particle conductance resonance and time coincidence measurements

Entanglement, being at the heart of the Einstein-Podolsky-Rosen (EPR) paradox, is a necessary ingredient in processing quantum information. Cooper pairs in superconductors - being composites of two fully entangled electrons - can be split adiabatically, thus forming entangled electrons. We fabricated such electron splitter by contacting an aluminum superconductor strip at the center of a suspended InAs nanowire; terminated at both ends with two normal metallic drains. Intercepting each half of the nanowire by gate - induced Coulomb blockaded quantum dot strongly impeded the flow of Cooper pairs due to large charging energy, while still permitting passage of single electrons. Here, we provide conclusive evidence of extremely high efficiency Cooper pairs splitting via observing positive average (conductance) and time (shot noise) correlations of the split electrons in the two opposite drains of the nanowire. Moreover, The actual charge of the injected quasiparticles was verified by shot noise measurements.

cond-mat.mes-hall↗

arXiv2010

On the Design and Analysis of Quaternary Serial and Parallel Adders

Optimization techniques for decreasing the time and area of adder circuits have been extensively studied for years mostly in binary logic system. In this paper, we provide the necessary equations required to design a full adder in quaternary logic system. We develop the equations for single-stage parallel adder which works as a carry look-ahead adder. We also provide the design of a logarithmic stage parallel adder which can compute the carries within log2(n) time delay for n qudits. At last, we compare the designs and finally propose a hybrid adder which combines the advantages of serial and parallel adder.

cs.AR↗

arXiv2009

Formation of p-n junction in polymer electrolyte-top gated bilayer graphene transistor

We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is measured to be 1.5 $μF/cm^2$, a value about 125 times higher than the conventional SiO$_2$ back gate capacitance. Unlike the single layer graphene, the drain-source current does not saturate on varying the drain-source bias voltage. The energy gap opened between the valence and conduction bands using top and back gate geometry is estimated.

cond-mat.mes-hall↗

arXiv2007

Raman spectroscopy of graphene on different substrates and influence of defects

We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the preparation of sample for the same number of graphene layers. The 2D Raman band has characteristic line shapes in single and bilayer graphene, capturing the differences in their electronic structure. The defects have a significant influence on the G band peak position for the single layer graphene: the frequency shows a blue shift upto 12 cm$^{-1}$ depending on the intensity of the D Raman band, which is a marker of the defect density. Most surprisingly, Raman spectra of graphene on the conducting ITO plates show a lowering of the G mode frequency by $\sim$ 6 cm$^{-1}$ and the 2D band frequency by $\sim$ 20 cm$^{-1}$. This red-shift of the G and 2D bands is observed for the first time in single layer graphene.

cond-mat.mtrl-sci↗

arXiv2007

Binding of Nucleobases with Single-Walled Carbon Nanotubes

We have calculated the binding energy of various nucleobases (guanine (G), adenine (A), thymine (T) and cytosine (C)) with (5,5) single-walled carbon nanotubes (SWNTs) using ab-initio Hartre-Fock method (HF) together with force field calculations. The gas phase binding energies follow the sequence G $>$ A $>$ T $>$ C. We show that main contribution to binding energy comes from van-der Wall (vdW) interaction between nanotube and nucleobases. We compare these results with the interaction of nucleobases with graphene. We show that the binding energy of bases with SWNTs is much lower than the graphene but the sequence remains same. When we include the effect of solvation energy (Poisson-Boltzman (PB) solver at HF level), the binding energy follow the sequence G $>$ T $>$ A $>$ C $>$, which explains the experiment\cite{zheng} that oligonucleotides made of thymine bases are more effective in dispersing the SWNT in aqueous solution as compared to poly (A) and poly (C). We also demonstrate experimentally that there is differential binding affinity of nucleobases with the single-walled carbon nanotubes (SWNTs) by directly measuring the binding strength using isothermal titration (micro) calorimetry. The binding sequence of the nucleobases varies as thymine (T) $>$ adenine (A) $>$ cytosine (C), in agreement with our calculation.

cond-mat.mtrl-sci↗

arXiv2007

Probing the doping in metallic and semiconducting carbon nanotubes by Raman and transport measurements

In-situ Raman experiments together with transport measurements have been carried out on carbon nanotubes as a function of gate voltage. In metallic tubes, a large increase in the Raman frequency of the $G^-$ band, accompanied by a substantial decrease of its line-width, is observed with electron or hole doping. In addition, we see an increase in Raman frequency of the $G^+$ band in semiconducting tubes. These results are quantitatively explained using ab-initio calculations that take into account effects beyond the adiabatic approximation. Our results imply that Raman spectroscopy can be used as an accurate measure of the doping of both metallic and semiconducting nanotubes.

cond-mat.mes-hall↗