arXiv subjects

Anindya Das

Publications and source records attributed to Anindya Das.

At least 37 records · Page 2Linked to original sources

arXiv2021

Interaction driven giant thermopower in magic-angle twisted bilayer graphene

Magic-angle twisted bilayer graphene (MtBLG) has proven to be an extremely promising new platform to realize and study a host of emergent quantum phases arising from the strong correlations in its narrow bandwidth flat band. In this regard, thermal transport phenomena like thermopower, in addition to being coveted technologically, is also sensitive to the particle-hole (PH) asymmetry, making it a crucial tool to probe the underlying electronic structure of this material. We have carried out thermopower measurements of MtBLG as a function of carrier density, temperature and magnetic field, and report the observation of an unusually large thermopower reaching up to a value as high as $\sim \bf{100μV/K}$ at a low temperature of 1K. Surprisingly, our observed thermopower exhibiting peak-like features in close correspondence to the resistance peaks around the integer Moire fillings, including the Dirac Point, violating the Mott formula. %Surprisingly, our observed thermopower exhibits peak-like features in close correspondence to the resistance peaks around the integer Moire fillings, including the Dirac Point, which completely violates the Mott formula. We show that the large thermopower peaks and their %non-monotonic dependence with temperature and magnetic field associated behaviour arise from the emergent highly PH asymmetric electronic structure due to the cascade of Dirac revivals. Furthermore, the thermopower shows an anomalous peak around the superconducting transition on the hole side and points towards the possible role of enhanced superconducting fluctuations in MtBLG.

cond-mat.mes-hall↗

arXiv2021

Thickness dependent transition from the 1T$^\prime$ to Weyl semimetal phase in ultrathin MoTe$ _{2} $: Electrical transport, Noise and Raman studies

Bulk 1T$^\prime$-MoTe$_2$ shows a structural phase transition from 1T$^\prime$ to Weyl semimetallic (WSM) $ T_{d} $ phase at $\sim$ 240 K. This phase transition and transport properties in the two phases have not been investigated on ultra-thin crystals. Here we report electrical transport, $1/f$ noise and Raman studies in ultra-thin 1T$^\prime$-MoTe$_2$ ($\sim$ 5 to 16 nm thick) field-effect transistors (FETs) devices as a function of temperature. The electrical resistivities for thickness 16 nm and 11 nm show maxima at temperatures 208 K and 178 K, respectively, making a transition from semiconducting to semi-metallic phase, hitherto not observed in bulk samples. Raman frequencies and linewidths for 11nm thick crystal show change around 178 K, attributed to additional contribution to the phonon self-energy due to enhanced electron-phonon interaction in the WSM phase. Further, the resistivity at low-temperature shows an upturn below 20 K along with the maximum in the power spectral density of the low frequency $1/f$ noise. The latter rules out the metal-insulator transition (MIT) being responsible for the upturn of resistivity below 20 K. The low temperature resistivity follows $ρ\propto 1/T$, changing to $ρ\propto T$ with increasing temperature supports electron-electron interaction physics at electron-hole symmetric Weyl nodes below 20 K. These observations will pave the way to unravel the properties of WSM state in layered ultra-thin van der Waals materials.

cond-mat.mes-hall↗

arXiv2021

Observation of ballistic upstream modes at fractional quantum Hall edges of graphene

The structure of edge modes at the boundary of quantum Hall (QH) phases forms the basis for understanding low energy transport properties. In particular, the presence of ``upstream'' modes, moving against the direction of charge current flow, is critical for the emergence of renormalized modes with exotic quantum statistics. Detection of excess noise at the edge is a smoking gun for the presence of upstream modes. Here we report on noise measurements at the edges of fractional QH (FQH) phases realized in dual graphite-gated bilayer graphene devices. A noiseless dc current is injected at one of the edge contacts, and the noise generated at contacts at $L= 4\,μ$m or $10\,μ$m away along the upstream direction is studied. For integer and particle-like FQH states, no detectable noise is measured. By contrast, for ``hole-conjugate'' FQH states, we detect a strong noise proportional to the injected current, unambiguously proving the existence of upstream modes. The noise magnitude remaining independent of length together with a remarkable agreement with our theoretical analysis demonstrates the ballistic nature of upstream energy transport, quite distinct from the diffusive propagation reported earlier in GaAs-based systems. Our investigation opens the door to the study of upstream transport in more complex geometries and in edges of non-Abelian phases in graphene.

cond-mat.mes-hall↗

arXiv2021

Enhanced electron-phonon coupling in doubly aligned hexagonal boron nitride bilayer graphene heterostructure

The relative twist angle in heterostructures of two-dimensional (2D) materials with similar lattice constants result in a dramatic alteration of the electronic properties. Here, we investigate the electrical and magnetotransport properties in bilayer graphene (BLG) encapsulated between two hexagonal boron nitride (hBN) crystals, where the top and bottom hBN are rotationally aligned with bilayer graphene with a twist angle $θ_t\sim 0^{\circ} \text{and}~ θ_b < 1^{\circ}$, respectively. This results in the formation of two moiré superlattices, with the appearance of satellite resistivity peaks at carrier densities $n_{s1}$ and $n_{s2}$, in both hole and electron doped regions, together with the resistivity peak at zero carrier density. Furthermore, we measure the temperature(T) dependence of the resistivity ($ρ$). The resistivity shows a linear increment with temperature within the range 10K to 50K for the density regime $n_{s1} <n<n_{s2}$ with a large slope d$ρ$/dT $\sim$ 8.5~$Ω$/K. The large slope of d$ρ$/dT is attributed to the enhanced electron-phonon coupling arising due to the suppression of Fermi velocity in the reconstructed minibands, which was theoretically predicted, recently in doubly aligned graphene with top and bottom hBN. Our result establishes the uniqueness of doubly aligned moire system to tune the strength of electron-phonon coupling and to modify the electronic properties of multilayered heterostructures.

cond-mat.mes-hall↗

arXiv2021

Quantized conductance with non-zero shot noise as a signature of Andreev edge state

Electrical conductance measurements have limited scope in identifying Andreev edge states (AESs), which form the basis for realizing various topological excitations in quantum Hall (QH) - superconductor (SC) junctions. To unambiguously detect AESs, we measure shot noise along with electrical conductance in a graphene based QH-SC junction at integer filling nu=2. Remarkably, we find that the Fano factor of shot noise approaches half when the bias energy is less than the superconducting gap, whereas it is close to zero above the superconducting gap. This is striking, given that, at the same time, the electrical conductance remains quantized at 2e^2/h within and above the superconducting gap. A quantized conductance is expected to produce zero shot noise due to its dissipationless flow. However, at a QH-SC interface, AESs carry the current in the zero-bias limit and an equal mixing of electron and hole like states produces half of the Poissonian shot noise with quantized conductance. The observed results are in accord with our detailed theoretical calculations of electrical conductance and shot noise based on non-equilibrium Green's function method in the presence of disorder. Our results pave the way in using shot noise as a detection tool in the search of exotic topological excitations in QH-SC hybrids.

cond-mat.mes-hall↗

arXiv2021

Hexagonal Boron Nitride-Graphene Heterostructures with Enhanced Interfacial Thermal Conductance for Thermal Management Applications

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve their performance. Graphene supported on hexagonal boron nitride (h-BN) substrate has been reported to show enhanced (opto)electronic and thermal properties as compared to extensively used SiO2/Si supported graphene. Motivated by this, we have performed temperature- and power-dependent Raman Spectroscopic measurements on four different types of (hetero)structures: (a) h-BN (BN), (b) graphene (Gr), (c) h-BN on graphene (BG), and (d) graphene encapsulated by h-BN layers from both top and bottom (BGB), all supported on SiO2/Si substrate. We have estimated the values of thermal conductivity (\k{appa}) and interfacial thermal conductance per unit area (g) of these four (hetero)structures to demonstrate the structure-activity (thermal) relationship. We report here the values of \k{appa} and g for h-BN supported on SiO2/Si as 280.0 +-58.0 Wm-1K-1 and 25.6+-0.4 MWm-2K-1, respectively. More importantly, we have observed an improvement in both thermal conductivity and interfacial thermal conductance per unit area in the heterostructures which ensures a better heat dissipation in devices. The \k{appa} and g of h-BN encapsulated graphene on SiO2/Si (BGB) sample was observed to be 850.0+-81.0 Wm-1K-1 and 105+-1 MWm-2K-1, respectively, as opposed to 600.0+-93.0 Wm-1K-1 and 1.15+-0.40 MWm-2K-1, respectively, for graphene on SiO2/Si substrate. Therefore, we propose that for graphene-based nanoscale devices, encapsulation with h-BN is a better alternative to address heat management issues.

cond-mat.mtrl-sci↗

arXiv2021

Vanishing thermal equilibration for hole-conjugate fractional quantum Hall states in graphene

Transport through edge-channels is responsible for conduction in quantum Hall (QH) phases. Topology dictates quantization of both charge and thermal transport coefficients. These turn out to approach robust quantized values when incoherent equilibration processes become dominant. Here, we report on measurements of both electrical and thermal conductances of integer and fractional quantum Hall (FQH) phases, realized in hBN encapsulated graphite gated bilayer graphene devices. Remarkably, for the complex edge at filling factors $ν=5/3$ and $ν=8/3$, which correspond to the paradigmatic hole-conjugate FQH phase $ν=2/3$ of the partially filled Landau level, we find vanishing thermal equilibration. This is striking, given that, at the same time, our results for the electrical conductance indicate efficient charge equilibration. These results are in accord with our theoretical analysis, pointing to a divergent thermal equilibration length in the limit of strong electrostatic interaction. Our results elucidate the subtle nature of the crossover from mesoscopic to robust topology-dominated transport in electronic two-dimensional topological phases.

cond-mat.mes-hall↗

arXiv2020

Anomalous thermopower oscillations in graphene-InAs nanowire vertical heterostructures

Thermoelectric measurements have the potential to uncover the density of states of low-dimensional materials. Here, we present the anomalous thermoelectric behaviour of mono-layer graphene-nanowire (NW) heterostructures, showing large oscillations as a function of doping concentration. Our devices consist of InAs NW and graphene vertical heterostructures, which are electrically isolated by thin ($\sim$ 10nm) hexagonal boron nitride (hBN) layers. In contrast to conventional thermoelectric measurements, where a heater is placed on one side of a sample, we use the InAs NW (diameter $\sim 50$ nm) as a local heater placed in the middle of the graphene channel. We measure the thermoelectric voltage induced in graphene due to Joule heating in the NW as a function of temperature (1.5K - 50K) and carrier concentration. The thermoelectric voltage in bilayer graphene (BLG)- NW heterostructures shows sign change around the Dirac point, as predicted by Mott's formula. In contrast, the thermoelectric voltage measured across monolayer graphene (MLG)-NW heterostructures shows anomalous large-amplitude oscillations around the Dirac point, not seen in the Mott response derived from the electrical conductivity measured on the same device. The anomalous oscillations are a signature of the modified density of states in MLG by the electrostatic potential of the NW, which is much weaker in the NW-BLG devices. Thermal calculations of the heterostructure stack show that the temperature gradient is dominant in the graphene region underneath the NW, and thus sensitive to the modified density of states resulting in anomalous oscillations in the thermoelectric voltage. Furthermore, with the application of a magnetic field, we detect modifications in the density of states due to the formation of Landau levels in both MLG and BLG.

cond-mat.mes-hall↗

arXiv2020

Hall Effect for Dirac Electrons in Graphene Exposed to an Abrikosov Flux Lattice

The proposals for realizing exotic particles through coupling of quantum Hall effect to superconductivity involve spatially non-uniform magnetic fields. As a step toward that goal, we study, both theoretically and experimentally, a system of Dirac electrons exposed to an Abrikosov flux lattice. We theoretically find that non-uniform magnetic field causes a carrier-density dependent reduction of the Hall conductivity. Our studies show that this reduction originates from a rather subtle effect: a levitation of the Berry curvature within Landau levels broadened by the non-uniform magnetic field. Experimentally, we measure the magneto-transport in a monolayer graphene-hexagonal boron nitride - niobium diselenide (NbSe$_2$) heterostructure, and find a density-dependent reduction of the Hall resistivity of graphene as the temperature is lowered from above the superconducting critical temperature of NbSe$_2$, when the magnetic field is uniform, to below, where the magnetic field bunches into an Abrikosov flux lattice.

cond-mat.mes-hall↗

arXiv2020

Interplay of filling fraction and coherence in symmetry broken graphene p-n junction

The coherence of quantum Hall (QH) edges play the deciding factor in demonstrating an electron interferometer, which has potential to realize a topological qubit. A Graphene p-n junction (PNJ) with co-propagating spin and valley polarized QH edges is a promising platform for studying an electron interferometer. However, though a few experiments have been attempted for such PNJ via conductance measurements, the edge dynamics (coherent or incoherent) of QH edges at a PNJ, where either spin or valley symmetry or both are broken, remain unexplored. In this work, we have carried out the measurements of conductance together with shot noise, an ideal tool to unravel the dynamics, at low temperature (~ 10mK) in a dual graphite gated hexagonal boron nitride (hBN) encapsulated high mobility graphene device. The conductance data show that the symmetry broken QH edges at the PNJ follow spin selective equilibration. The shot noise results as a function of both p and n side filling factors reveal the unique dependence of the scattering mechanism with filling factors. Remarkably, the scattering is found to be fully tunable from incoherent to coherent regime with the increasing number of QH edges at the PNJ, shedding crucial insights into graphene based electron interferometer.

cond-mat.mes-hall↗

arXiv2020

Anomalous Coulomb Drag between InAs Nanowire and Graphene Heterostructures

Correlated charge inhomogeneity breaks the electron-hole symmetry in two-dimensional (2D) bilayer heterostructures which is responsible for non-zero drag appearing at the charge neutrality point. Here we report Coulomb drag in novel drag systems consisting of a two-dimensional graphene and a one dimensional (1D) InAs nanowire (NW) heterostructure exhibiting distinct results from 2D-2D heterostructures. For monolayer graphene (MLG)-NW heterostructures, we observe an unconventional drag resistance peak near the Dirac point due to the correlated inter-layer charge puddles. The drag signal decreases monotonically with temperature ($\sim T^{-2}$) and with the carrier density of NW ($\sim n_{N}^{-4}$), but increases rapidly with magnetic field ($\sim B^{2}$). These anomalous responses, together with the mismatched thermal conductivities of graphene and NWs, establish the energy drag as the responsible mechanism of Coulomb drag in MLG-NW devices. In contrast, for bilayer graphene (BLG)-NW devices the drag resistance reverses sign across the Dirac point and the magnitude of the drag signal decreases with the carrier density of the NW ($\sim n_{N}^{-1.5}$), consistent with the momentum drag but remains almost constant with magnetic field and temperature. This deviation from the expected $T^2$ arises due to the shift of the drag maximum on graphene carrier density. We also show that the Onsager reciprocity relation is observed for the BLG-NW devices but not for the MLG-NW devices. These Coulomb drag measurements in dimensionally mismatched (2D-1D) systems, hitherto not reported, will pave the future realization of correlated condensate states in novel systems.

cond-mat.mes-hall↗

arXiv2019

Enhanced shot noise at bilayer graphene -- superconductor junction

Transport properties of graphene - superconductor junction has been studied extensively to understand the interplay of the relativistic Dirac quasiparticles and superconductivity. Though shot noise measurements in graphene has been performed to realize many theoretical predictions, both at zero magnetic field as well as quantum Hall (QH) regime, its junction with superconductor remain unexplored. Here, we have carried out the shot noise measurements in an edge contacted bilayer graphene - Niobium superconductor junction at zero magnetic field as well as QH regime. At the Dirac point we have observed a Fano factor ~ 1/3 above the superconducting gap and a transition to an enhanced Fano factor ~ 0.5 below the superconducting gap. By changing the carrier density we have found a continuous reduction of Fano factor for both types of carriers, however the enhancement of Fano factor within the superconducting gap by a factor of ~ 1.5 is always preserved. The enhancement of shot noise is also observed in the QH regime, where the current is carried by the edge state, below the critical magnetic field and within the superconducting gap. These observations clearly demonstrate the enhanced charge transport at the graphene-superconductor interface.

cond-mat.mes-hall↗

arXiv2019

Universal quantized thermal conductance in graphene

The universal quantization of thermal conductance provides information on the topological order of a state beyond electrical conductance. Such measurements have become possible only recently, and have discovered, in particular, that the value of the observed thermal conductance of the 5/2 state is not consistent with either the Pfaffian or the anti-Pfaffian model, motivating several theoretical articles. The analysis of the experiments has been made complicated by the presence of counter-propagating edge channels arising from edge reconstruction, an inevitable consequence of separating the dopant layer from the GaAs quantum well. In particular, it has been found that the universal quantization requires thermalization of downstream and upstream edge channels. Here we measure the thermal conductance in hexagonal boron nitride encapsulated graphene devices of sizes much smaller than the thermal relaxation length of the edge states. We find the quantization of thermal conductance within 5% accuracy for ν = 1, 4/3, 2 and 6 plateaus and our results strongly suggest the absence of edge reconstruction for fractional quantum Hall in graphene, making it uniquely suitable for interference phenomena exploiting paths of exotic quasiparticles along the edge.

cond-mat.mes-hall↗

arXiv2018

Energetics of complex phase diagram in a tunable bilayer graphene probed by quantum capacitance

Bilayer graphene provides a unique platform to explore the rich physics in quantum Hall effect. The unusual combination of spin, valley and orbital degeneracy leads to interesting symmetry broken states with electric and magnetic field. Conventional transport measurements like resistance measurements have been performed to probe the different ordered states in bilayer graphene. However, not much work has been done to directly map the energetics of those states in bilayer graphene. Here, we have carried out the magneto capacitance measurements with electric and magnetic field in a hexagonal boron nitride encapsulated dual gated bilayer graphene device. At zero magnetic field, using the quantum capacitance technique we measure the gap around the charge neutrality point as a function of perpendicular electric field and the obtained value of the gap matches well with the theory. In presence of perpendicular magnetic field, we observe Landau level crossing in our magneto-capacitance measurements with electric field. The gap closing and reopening of the lowest Landau level with electric and magnetic field shows the transition from one ordered state to another one. Further more we observe the collapsing of the Landau levels near the band edge at higher electric field ($\bar D > 0.5$ V/nm), which was predicted theoretically. The complete energetics of the Landau levels of bilayer graphene with electric and magnetic field in our experiment paves the way to unravel the nature of ground states of the system.

cond-mat.mes-hall↗

arXiv2018

Inter-Landau-level Andreev Reflection at the Dirac Point in a Graphene Quantum Hall State Coupled to a NbSe2 Superconductor

Superconductivity and quantum Hall effect are distinct states of matter occurring in apparently incompatible physical conditions. Recent theoretical developments suggest that the coupling of quantum Hall effect with a superconductor can provide a fertile ground for realizing exotic topological excitations such as non-abelian Majorana fermions or Fibonacci particles. As a step toward that goal, we report observation of Andreev reflection at the junction of a quantum Hall edge state in a single layer graphene and a quasi-two dimensional niobium diselenide (NbSe2) superconductor. Our principal finding is the observation of an anomalous finite-temperature conductance peak located precisely at the Dirac point, providing a definitive evidence for inter-Landau level Andreev reflection in a quantum Hall system. Our observations are well supported by detailed numerical simulations, which offer additional insight into the role of the edge states in Andreev physics. This study paves the way for investigating analogous Andreev reflection in a fractional quantum Hall system coupled to a superconductor to realize exotic quasiparticles.

cond-mat.mes-hall↗

arXiv2018

Enhanced Specular Andreev reflection in bilayer graphene

Andreev reflection in graphene is special since it can be of two types- retro or specular. Specular Andreev reflection (SAR) dominates when the position of the Fermi energy in graphene is comparable to or smaller than the superconducting gap. Bilayer graphene (BLG) is an ideal candidate to observe the crossover from retro to specular since the Fermi energy broadening near the Dirac point is much weaker compared to monolayer graphene. Recently, the observation of signatures of SAR in BLG have been reported experimentally by looking at the enhancement of conductance at finite bias near the Dirac point. However, the signatures were not very pronounced possibly due to the participation of normal quasi-particles at bias energies close to the superconducting gap. Here, we propose a scheme to observe the features of enhanced SAR even at zero bias at a normal metal (NM)-superconductor (SC) junction on BLG. Our scheme involves applying a Zeeman field to the NM side of the NM-SC junction on BLG (making the NM ferromagnetic), which energetically separates the Dirac points for up-spin and down-spin. We calculate the conductance as a function of chemical potential and bias within the superconducting gap and show that well-defined regions of specular- and retro-type Andreev reflection exist. We compare the results with and without superconductivity. We also investigate the possibility of the formation of a p-n junction at the interface between the NM and SC due to a work function mismatch.

cond-mat.mes-hall↗

arXiv2018

Equilibration of Quantum hall edges in symmetry broken bilayer graphene

Equilibration of quantum Hall edges is studied in a high quality dual gated bilayer graphene device in both unipolar and bipolar regime when all the degeneracies of the zero energy Landau level are completely lifted. We find that in the unipolar regime when the filling factor under the top gate region is higher than the back gate filling factor, the equilibration is partial based on their spin polarization. However, the complete mixing of the edge states is observed in the bipolar regime irrespective of their spin configurations due to the Landau level collapsing at the sharp pn junction in our thin hBN (~ 15 nm) encapsulated device, in consistent with the existing theory.

cond-mat.mes-hall↗

arXiv2018

Large Landau level splitting with tunable one-dimensional graphene superlattice probed by magneto capacitance measurements

The unique zero energy Landau Level of graphene has a particle-hole symmetry in the bulk, which is lifted at the boundary leading to a splitting into two chiral edge modes. It has long been theoretically predicted that the splitting of the zero-energy Landau level inside the {\it bulk} can lead to many interesting physics, such as quantum spin Hall effect, Dirac like singular points of the chiral edge modes, and others. However, so far the obtained splitting with high-magnetic field even on a hBN substrate are not amenable to experimental detection, and functionality. Guided by theoretical calculations, here we produce a large gap zero-energy Landau level splitting ($\sim$ 150 meV) with the usage of a one-dimensional (1D) superlattice potential. We have created tunable 1D superlattice in a hBN encapsulated graphene device using an array of metal gates with a period of $\sim$ 100 nm. The Landau level spectrum is visualized by measuring magneto capacitance spectroscopy. We monitor the splitting of the zeroth Landau level as a function of superlattice potential. The observed splitting energy is an order higher in magnitude compared to the previous studies of splitting due to the symmetry breaking in pristine graphene. The origin of such large Landau level spitting in 1D potential is explained with a degenerate perturbation theory. We find that owing to the periodic potential, the Landau level becomes dispersive, and acquires sharp peaks at the tunable band edges. Our study will pave the way to create the tunable 1D periodic structure for multi-functionalization and device application like graphene electronic circuits from appropriately engineered periodic patterns in near future.

cond-mat.mes-hall↗