arXiv subjects

Anna N. Morozovska

Publications and source records attributed to Anna N. Morozovska.

194 records · Page 11Linked to original sources

arXiv2007

Phase transitions induced by confinement of ferroic nanoparticles

General approach for consideration of primary ferroic (ferroelectric, ferromagnetic, ferroelastic) nanoparticles phase transitions was proposed in phenomenological theory framework. The surface stress, order parameter gradient, striction as well as depolarization and demagnetization effects were included into the free energy. The strong intrinsic surface stress under the curved nanoparticle surface was shown to play the important role in the shift of transition temperature (if any) up to the appearance of new ordered phase absent in the bulk ferroic. The approximate analytical expression for the size-induced ferroelectric transition temperature dependence on cylindrical or spherical nanoparticle sizes, polarization gradient coefficient, correlation radius, intrinsic surface stress and electrostriction coefficient was derived. It was shown that the transition temperature of nanoparticle could be higher than the one of the bulk material. The best conditions of ferroelectric properties conservation and enhancement in nanowires correspond to the radius 5-50nm and compressive surface stress. Under the favorable conditions size effects (spatial confinement) induces ferroelectric phase in incipient ferroelectrics nanowires and nanospheres. The prediction of size-induced ferroelectricity in KTaO3 nanorods with radius less then 5-20 nm at room temperatures could be important for the next step of device miniaturization based on 3D nanostructures.

cond-mat.mtrl-sci↗

arXiv2007

Polarization Screening Effect on Local Polarization Switching Mechanism and Hysteresis Loop Measurements in Piezoresponse Force Microscopy

Piezoresponse Force Spectroscopy (PFS) has emerged as a powerful tool for probing polarization dynamics on the nanoscale. Application of a dc bias to a nanoscale probe in contact with a ferroelectric surface results in the nucleation and growth of a ferroelectric domain below the probe apex. The latter affects local electromechanical response detected by the probe. Resulting hysteresis loop contains information on local ferroelectric switching. The self-consistent analysis of the PFS data requires (a) deriving the thermodynamic parameters of domain nucleation and (b) establishing the relationships between domain parameters and PFM signal. Here, we analyze the effect of screening at the domain wall on local polarization reversal mechanism. It is shown that the screening control both the domain nucleation activation energy and hysteresis loop saturation rate.

cond-mat.mtrl-sci↗

arXiv2006

Piezoresponse Force Spectroscopy of Ferroelectric Materials

Piezoresponse Force Spectroscopy (PFS) has emerged as a powerful technique for probing highly localized switching behavior and the role of microstructure and defects on switching. The application of a dc bias to a scanning probe microscope tip in contact with a ferroelectric surface results in the nucleation and growth of a ferroelectric domain below the tip, resulting in changes in local electromechanical response. Resulting hysteresis loops contains information on local ferroelectric switching behavior. The signal in PFS is the convolution of the volume of the nascent domain and the probing volume of the tip. Here, we analyze the signal formation mechanism in PFS by deriving the main parameters of domain nucleation in a semi-infinite material and establishing the relationships between domain parameters and PFM signal using a linear Greens function theory. The effect of surface screening and finite Debye length on the switching behavior is established. In particular, we predict that the critical nucleus size in PFM is controlled by the surface screening mechanism and in the absence of screening, tip-induced switching is impossible. Future prospects of PFS to study domain nucleation in the vicinity of defects, local switching centers in ferroelectrics, and unusual polarization states in low-dimensional ferroelectrics are discussed.

cond-mat.mtrl-sci↗

arXiv2006

Resolution Function Theory in Piezoresponse Force Microscopy: Domain Wall Profile, Spatial Resolution, and Tip Calibration

Piezoresponse Force Microscopy (PFM) has emerged as a primary tool for imaging, domain engineering, and switching spectroscopy on ferroelectric materials. Quantitative interpretation of PFM data including measurements of the intrinsic width of the domain walls, geometric parameters of the domain below the tip in local hysteresis loop measurements, as well as interpretation of switching and coercive biases in terms of materials properties and switching mechanisms, requires reliable knowledge on electrostatic field structure produced by the tip. Using linear imaging theory, we develop a theoretical approach for interpretation of these measurements and determination of tip parameters from a calibration standard. The resolution and object transfer functions in PFM are derived and effect of materials parameters on resolution is determined. Closed form solutions for domain wall profiles in vertical and lateral PFM and signal from cylindrical domain in transversally isotropic piezoelectric are derived for point-charge and sphere-plane geometry of the tip.

cond-mat.mtrl-sci↗

arXiv2006

Electromechanical Detection in Scanning Probe Microscopy: Tip Models and Materials Contrast

The rapid development of nanoscience and nanotechnology in the last two decades was stimulated by the emergence of scanning probe microscopy (SPM) techniques capable of accessing local material properties, including transport, mechanical, and electromechanical behavior on the nanoscale. Here, we analyze the general principles of electromechanical probing by piezoresponse force microscopy (PFM), a scanning probe technique applicable to a broad range of piezoelectric and ferroelectric materials. The physics of image formation in PFM is compared to Scanning Tunneling Microscopy and Atomic Force Microscopy in terms of the tensorial nature of excitation and the detection signals and signal dependence on the tip-surface contact area. It is shown that its insensitivity to contact area, capability for vector detection, and strong orientational dependence render this technique a distinct class of SPM. The relationship between vertical and lateral PFM signals and material properties are derived analytically for two cases: transversally-isotropic piezoelectric materials in the limit of weak elastic anisotropy, and anisotropic piezoelectric materials in the limit of weak elastic and dielectric anisotropies. The integral representations for PFM response for fully anisotropic material are also obtained. The image formation mechanism for conventional (e.g., sphere and cone) and multipole tips corresponding to emerging shielded and strip-line type probes are analyzed. Resolution limits in PFM and possible applications for orientation imaging on the nanoscale and molecular resolution imaging are discussed.

cond-mat.mtrl-sci↗

arXiv2006

Domain Nucleation and Hysteresis Loop Shape in Piezoresponse Force Spectroscopy

Electromechanical hysteresis loop measurements in Piezoresponse Force Microscopy (Piezoresponse Force Spectroscopy) have emerged as a powerful technique for probing ferroelectric switching behavior on the nanoscale. Interpretation of PFS data requires the relationship between the domain parameters and PFM signal to be established. Here, we analyze the switching process using a modified point charge model for the electric field of the tip. The charge value and position are selected so that its electric field isopotential surface reproduces the tip with definite radius of curvature. Using linear theory of elasticity the relationship between the sizes of semiellipsoidal domain and PFM signal has been derived. The role of domain nucleation on piezoresponse hysteresis loop is established.

cond-mat.mtrl-sci↗

arXiv2006

Materials Contrast in Piezoresponse Force Microscopy

Piezoresponse Force Microscopy contrast in transversally isotropic material corresponding to the case of c+ - c- domains in tetragonal ferroelectrics is analyzed using Green's function theory by Felten et al. [J. Appl. Phys. 96, 563 (2004)]. A simplified expression for PFM signal as a linear combination of relevant piezoelectric constant are obtained. This analysis is extended to piezoelectric material of arbitrary symmetry with weak elastic and dielectric anisotropies. This result provides a framework for interpretation of PFM signals for systems with unknown or poorly known local elastic and dielectric properties, including nanocrystalline materials, ferroelectric polymers, and biopolymers.

cond-mat.mtrl-sci↗

arXiv2006

Size effects and depolarization field influence on the phase diagrams of cylindrical ferroelectric nanoparticles

Ferroelectric nanoparticles of different shape and their nanocomposites are actively studied in modern physics. Because of their applications in many fields of nanotechnology, the size effects and the possible disappearance of ferroelectricity at a critical particle volume attract a growing scientific interest. In this paper we study the size effects of the cylindrical nanoparticle phase diagrams allowing for effective surface tension and depolarization field influence. The Euler-Lagrange equations were solved by direct variational method. The approximate analytical expression for the paraelectric-ferroelectric transition temperature dependence on nanoparticle sizes, polarization gradient coefficient, extrapolation length, effective surface tension and electrostriction coefficient was derived. It was shown that the transition temperature could be higher than the one of the bulk material for nanorods and nanowires in contrast to nanodisks, where the decrease takes place. The critical sizes and volume of ferroelectric-paraelectric phase transition are calculated. We proved that among all cylindrical shapes a nanobar reveals the minimal critical volume. We predicted the enhancement of ferroelectric properties in nanorods and nanowires. Obtained results explain the observed ferroelectricity enhancement in nanorods and could be very useful for elaboration of modern nanocomposites with perfect polar properties.

cond-mat.mtrl-sci↗

arXiv2005

The screening effects influence on the nano-domain tailoring in ferroelectrics-semiconductors

We calculate the realistic sizes of nano-domains recorded by the electric field of atomic force microscope tip in BaTiO3 and LiNbO3 ferroelectric-semiconductors in contrast to the over-estimated ones obtained in the previous works. We modified the existing models of domain formation allowing for the Debye screening, recharging of sluggish surface screening layers caused by emission current between the tip apex and the domain butt surface and the redistribution of domain depolarization field induced by the charged tip apex. We have shown that the depolarization field energy of the domain butt, Debye screening effects and field emission at high voltages lead to the essential decrease of the equilibrium domain sizes. We obtained, that the domain length and radius do not decrease continuously with voltage decrease: the domain appears with non-zero length and radius at definite critical voltage. Such "threshold" domain formation is similar to the first order phase transition and correlates with recent theoretical and experimental investigations.

cond-mat.mtrl-sci↗

arXiv2005

Thermodynamical approach to nanodomain tailoring in thin ferroelectric-semiconductor films

We propose the thermodynamical theory of nanodomain tailoring with the help of atomic force microscope electric field in thin ferroelectric-semiconductor films. We modified the existing thermodynamical models of domain formation allowing for the Debye screening, recharging of sluggish surface charge layers caused by emission current between the tip apex and sample surface.For the first time we calculated the realistic sizes of nanodomains recorded in BaTiO3, PbZrxTi1-xO3 and LiTaO3 ferroelectric-semiconductor thin films in contrast to the over-estimated ones obtained in the evolved approaches. We have shown that the depolarization field energy of the domain butt, Debye screening effects and field emission at high voltages lead to the essential decrease of the equilibrium domain sizes. For the first time we obtained, that the domain radius does not decrease continuously with applied voltage decrease: the domain appears with non-zero radius at definite critical voltage applied to the tip. This result completely agrees with experimentally observed threshold domain recording in PbZrxTi1-xO3 and LiTaO3 thin films. Such threshold domain formation is similar to the first order phase transition. We hope, that our results will help one to determine the necessary recording conditions and appropriate ferroelectric medium in order to obtain the stable domains with minimum lateral size in a wide range of applied voltages.

cond-mat.mtrl-sci↗

arXiv2005

Modeling of micro- and nano-scale domain recording by high-voltage atomic force microscopy in ferroelectrics-semiconductors

The equilibrium sizes of micro- and nano-domains caused by electric field of atomic force microscope tip in ferroelectric semiconductor crystals have been calculated. The domain was considered as a prolate semi-ellipsoid with rather thin domain walls. For the first time we modified the Landauer model allowing for semiconductor properties of the sample and the surface energy of the domain butt. The free carriers inside the crystal lead to the formation of the screening layer around the domain, which partially shields its interior from the depolarization field. We expressed the radius and length of the domain though the crystal material parameters (screening radius, spontaneous polarization value, dielectric permittivity tensor) and atomic force microscope tip characteristics (charge, radius of curvature). The obtained dependence of domain radius via applied voltage is in a good quantitative agreement with the ones of submicron ferroelectric domains recorded by high-voltage atomic force and scanning probe microscopy in LiNbO3 and LiTaO3 crystals.

cond-mat.mtrl-sci↗

arXiv2004

Modeling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects

We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic one and the various hysteresis loop deformations (constricted and double loops) have been obtained in the framework of our model. The obtained results quantitatively explain the ferroelectric switching in such ferroelectric materials as thick PZT films.

cond-mat.mtrl-sci↗

arXiv2004

Peculiarities of polarization switching in ferroelectric semiconductors with charged inhomogeneities

We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic one and the various hysteresis loop deformations (minor, constricted and double loops) have been obtained in the framework of our model. The obtained results qualitatively explain the ferroelectric switching in such bulk ferroelectric materials as SBN single crystals doped with Ce, PZT films doped with Nd and La- doped PZT ceramics.

cond-mat.mtrl-sci↗

arXiv2004

Phenomenological Description of Disordering in Ferroelectric Materials Caused by Charged Defects

We propose the phenomenological description of ferroelectric disordering in ferroelectric-semiconductors caused by charged impurities with the charge density random fluctuations. The material improper conductivity is proportional to the averaged impurity charge density. For high enough conductivity free carriers screen fluctuations in the absence of an external field. When external electric field is applied, inner field fluctuations and dynamical induction fluctuations appear in the inhomogeneously polarized system "charged defect + screening cloud". We show that the macroscopic state of ferroelectric-semiconductor with random charged defects and sufficiently high improper conductivity can be described by three coupled equations for three parameters averaged over sample volume. Induction determines the ferroelectric ordering in the system, its square fluctuation determines disordering caused by electric field fluctuations appeared around charged fluctuations, and averaged product of fluctuations of induction and charge density reflects the correlations between the free carriers screening cloud and charged defects fluctuations. For the first time we derive the following nonlinear system of coupled equations. The obtained system of coupled equations adequately describes the peculiarities of polarization switching (footprint and minor hysteresis loops) in such bulk ferroelectric materials as PLZT ceramics and SBN single crystals doped with cerium.

cond-mat.mtrl-sci↗