Searcharxiv⌕ Search

arXiv subjects

Antonio Rossi

Publications and source records attributed to Antonio Rossi.

30 records · Page 2Linked to original sources

Electronic structure and topology across $T_c$ in magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$

Co$_3$Sn$_2$S$_2$ is a magnetic Weyl semimetal, in which ferromagnetic ordering at 177K is predicted to stabilize Weyl points. We perform temperature and spatial dependent angle--resolved photoemission spectroscopy measurements through the Curie temperature ($T_c$), which show large band shifts and renormalization concomitant with the onset of magnetism. We argue that Co$_3$Sn$_2$S$_2$ evolves from a Mott ferromagnet below $T_c$ to a correlated metallic state above $T_c$. To understand the magnetism, we derive a tight-binding model of Co-$3d_{x^2-y^2}$ orbitals on the kagome lattice. At the filling obtained by first-principles calculations, this model reproduces the ferromagnetic ground state, and results in the reduction of Coulomb interactions due to cluster effects. Using a disordered local moment simulation, we show how this reduced Hubbard-$U$ leads to a collapse of the bands across the magnetic transition, resulting in a correlated state which carries associated characteristic photoemission signatures that are distinct from those of a simple lifting of exchange splitting. The behavior of topology across $T_c$ is discussed in the context of this description of the magnetism.

cond-mat.str-el↗

Dirac lines and loop at the Fermi level in the Time-Reversal Symmetry Breaking Superconductor LaNiGa$_2$

Unconventional superconductors have Cooper pairs with lower symmetries than in conventional superconductors. In most unconventional superconductors, the additional symmetry breaking occurs in relation to typical ingredients such as strongly correlated Fermi liquid phases, magnetic fluctuations, or strong spin-orbit coupling in noncentrosymmetric structures. In this article, we show that the time-reversal symmetry breaking in the superconductor LaNiGa$_2$ is enabled by its previously unknown topological electronic band structure. Our single crystal diffraction experiments indicate a nonsymmorphic crystal structure, in contrast to the previously reported symmorphic structure. The nonsymmorphic symmetries transform the $k_z=π/c$ plane of the Brillouin zone boundary into a node-surface. Band-structure calculations reveal that distinct Fermi surfaces become degenerate on the node-surface and form Dirac lines and a Dirac loop at the Fermi level. Two symmetry related Dirac points remain degenerate under spin-orbit coupling. ARPES measurements confirm the calculations and provide evidence for the Fermi surface degeneracies on the node-surface. These unique topological features enable an unconventional superconducting gap in which time-reversal symmetry can be broken in the absence of other typical ingredients. LaNiGa$_2$ is therefore a topological crystalline superconductor that breaks time-reversal symmetry without any overlapping magnetic ordering or fluctuations. Our findings will enable future discoveries of additional topological superconductors.

cond-mat.supr-con↗

Nanosecond dynamics in intrinsic topological insulator $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ revealed by time-resolved optical reflectivity

$\text{Bi}_2\text{Se}_3$ is an ideal three-dimensional topological insulator in which the chemical potential can be brought into the bulk band gap with antimony doping. Here, we utilize ultrafast time-resolved transient reflectivity to characterize the photoexcited carrier decay in $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets. We report a substantial slowing of the bulk carrier relaxation time in bulk-insulating $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets as compared to $n$-type bulk-metallic $\text{Bi}_2\text{Se}_3$ at low temperatures, which approaches $3.3 \text{ ns}$ in the zero pump fluence limit. This long-lived decay is correlated across different fluences and antimony concentrations, revealing unique decay dynamics not present in $n$-type $\text{Bi}_2\text{Se}_3$, namely the slow bimolecular recombination of bulk carriers.

cond-mat.mes-hall↗

Two phase transitions driven by surface electron-doping in WTe$_2$

WTe$_2$ is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here we demonstrate two non-monotonic changes in the electronic structure of WTe$_2$ upon \textit{in-situ} electron doping. The first phase transition is interpreted in terms of a shear displacement of the top WTe$_2$ layer, which realizes a local crystal structure not normally found in bulk WTe$_2$. The second phase transition is associated with stronger interactions between the dopant atoms and the host, both through hybridization and electric field. These results demonstrate that electron-doping can drive structural and electronics changes in bulk WTe$_2$ with implications for realizing nontrivial band structure changes in heterointerfaces and devices.

cond-mat.mtrl-sci↗

Three interaction energy scales in single-layer high-T$_C$ cuprate HgBa$_2$CuO$_{4+δ}$

The lamellar cuprate superconductors exhibit the highest ambient-pressure superconducting transition temperatures (T$_C$) and, after more than three decades of extraordinary research activity, continue to pose formidable scientific challenges. A major experimental obstacle has been to distinguish universal phenomena from materials- or technique-dependent ones. Angle-resolved photoemission spectroscopy (ARPES) measures momentum-dependent single-particle electronic excitations and has been invaluable in the endeavor to determine the anisotropic momentum-space properties of the cuprates. HgBa$_2$CuO$_{4+δ}$ (Hg1201) is a single-CuO$_2$-layer cuprate with a particularly high optimal T$_C$ and a simple crystal structure; yet there exists little information from ARPES about the electronic properties of this model system. Here we present an ARPES study of doping-, temperature-, and momentum-dependent systematics of near-nodal dispersion anomalies in Hg1201. The data reveal a hierarchy of three distinct energy scales -a sub-gap low-energy kink, an intermediate-energy kink near 55 meV, and a peak-dip-hump structure. The first two features are attributed to the coupling of electrons to Ba-derived optical phonons and in-plane bond-stretching phonons, respectively. The nodal peak-dip-hump structure appears to have a common doping-dependence in several single-layer cuprates, and is interpreted as a manifestation of pseudogap physics at the node. These results establish several universal phenomena, both in terms of connecting multiple experimental techniques for a single material, and in terms of connecting comparable spectral features in multiple structurally similar cuprates.

cond-mat.supr-con↗

Superlubricity of epitaxial monolayer WS2 on graphene

We report on the superlubric sliding of monolayer tungsten disulfide (WS2) on epitaxial graphene (EG) on silicon carbide (SiC). WS2 single-crystalline flakes with lateral size of hundreds of nanometers are obtained via chemical vapor deposition (CVD) on EG and microscopic and diffraction analyses indicate that the WS2/EG stack is predominantly aligned with zero azimuthal rotation. Our experimental findings show that the WS2 flakes are prone to slide over graphene surfaces at room temperature when perturbed by a scanning probe microscopy (SPM) tip. Atomistic force field based molecular dynamics simulations indicate that through local physical deformation of the WS2 flake, the scanning tip releases enough energy to the flake to overcome the motion activation barrier and to trigger an ultra-low friction roto-translational displacement, that is superlubric. Experimental observations indicate that after the sliding, the WS2 flakes rest with a rotation of npi/3 with respect to graphene. Atomically resolved investigations show that the interface is atomically sharp and that the WS2 lattice is strain-free. These results help to shed light on nanotribological phenomena in van der Waals (vdW) heterostacks and suggest that the applicative potential of the WS2/graphene heterostructure can be extended by novel mechanical prospects.

cond-mat.mtrl-sci↗

Emergence of excitonic superfluid at topological-insulator surfaces

Excitons are spin integer particles that are predicted to condense into a coherent quantum state at sufficiently low temperature, and exciton condensates can be realized at much higher temperature than condensates of atoms because of strong Coulomb binding and small mass. Signatures of exciton condensation have been reported in double quantum wells1-4, microcavities5, graphene6, and transition metal dichalcogenides7. Nonetheless, transport of exciton condensates is not yet understood and it is unclear whether an exciton condensate is a superfluid8,9 or an insulating electronic crystal10,11. Topological insulators (TIs) with massless particles and unique spin textures12 have been theoretically predicted13 as a promising platform for achieving exciton condensation. Here we report experimental evidence of excitonic superfluid phase on the surface of three-dimensional (3D) TIs. We unambiguously confirmed that electrons and holes are paired into charge neutral bound states by the electric field independent photocurrent distributions. And we observed a millimetre-long transport distance of these excitons up to 40 K, which strongly suggests dissipationless propagation. The robust macroscopic quantum states achieved with simple device architecture and broadband photoexcitation at relatively high temperature are expected to find novel applications in quantum computations and spintronics.

cond-mat.mes-hall↗

Electronic properties of WS$_2$ on epitaxial graphene on SiC(0001)

This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulphide WS$_2$ on epitaxial graphene (EG) on SiC(0001). The WS$_2$ is grown via chemical vapor deposition (CVD) onto the EG. Low-energy electron diffraction (LEED) measurements assign the zero-degree orientation as the preferential azimuthal alignment for WS$_2$/EG. The valence-band (VB) structure emerging from this alignment is investigated by means of photoelectron spectroscopy measurements, with both high space and energy resolution. We find that the spin-orbit splitting of monolayer WS$_2$ on graphene is of 462 meV, larger than what is reported to date for other substrates. We determine the value of the work function for the WS$_2$/EG to be 4.5$\pm$0.1 eV. A large shift of the WS$_2$ VB maximum is observed as well , due to the lowering of the WS$_2$ work function caused by the donor-like interfacial states of EG. Density functional theory (DFT) calculations carried out on a coincidence supercell confirm the experimental band structure to an excellent degree. X-ray photoemission electron microscopy (XPEEM) measurements performed on single WS$_2$ crystals confirm the van der Waals nature of the interface coupling between the two layers. In virtue of its band alignment and large spin-orbit splitting, this system gains strong appeal for optical spin-injection experiments and opto-spintronic applications in general.

cond-mat.mes-hall↗

Li-intercalated Graphene on SiC(0001): an STM study

We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of Lithium (Li) on graphene on silicon carbide (SiC). We have investigated Li deposition both on epitaxial monolayer graphene and on buffer layer surfaces on the Si-face of SiC. At room temperature, Li immediately intercalates at the interface between the SiC substrate and the buffer layer and transforms the buffer layer into a quasi-free-standing graphene. This conclusion is substantiated by LEED and STM evidence. We show that intercalation occurs through the SiC step sites or graphene defects. We obtain a good quantitative agreement between the number of Li atoms deposited and the number of available Si bonds at the surface of the SiC crystal. Through STM analysis, we are able to determine the interlayer distance induced by Li-intercalation at the interface between the SiC substrate and the buffer layer.

cond-mat.mtrl-sci↗

MBE growth of self-assisted InAs nanowires on graphene

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, Multiple Andreev Reflections were observed, and an inelastic scattering length of about 900 nm was derived.

cond-mat.mtrl-sci↗

Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction

By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition (CVD) approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.

cond-mat.mtrl-sci↗

Hydrogen storage in rippled graphene: perspectives from multi-scale simulations

Exploring new perspectives for green technologies is one of the challenges of the third millennium, in which the need for non-polluting and renewable powering has become primary. In this context, the use of hydrogen as a fuel is promising, since the energy released in its oxidation (~285 kJ/mole) is three times that released, on average, by hydrocarbons, and the combustion product is water (Ramage, 1983). Being hydrogen a vector of chemical energy, efficient conservation and non-dispersive transportation are the main goals. Three issues must be considered to this respect: (i) storage capacity (ii) storage stability (iii) kinetics of loading/release. Commercial technologies are currently based on cryo-compression or liquefaction of H2 in tanks. These ensure quite a high gravimetric density (GD, point (i)), namely 8-13% in weight of stored hydrogen, and a relatively low cost (Züttel 2003). However concerning points (ii) and (iii), these technologies pose problems of safety, mainly due to explosive flammability of hydrogen, and consequent unpractical conditions for transportation and use (Mori et al 2009). Therefore, research efforts are directed towards solid-state based storage systems (energy.gov, Bonaccorso et al 2015).

cond-mat.mes-hall↗