arXiv subjects

Anyuan Gao

Publications and source records attributed to Anyuan Gao.

At least 19 recordsLinked to original sources

arXiv2026

Programmable, Spontaneous Superlattice Memory in a Monolayer Topological Insulator

Memory is a foundational concept across disciplines, from neurobiology and electronics to artificial intelligence and quantum gravity. In materials, memory effects typically arise from ferroic orders, such as ferroelectricity and ferromagnetism, where information is stored in charge or spin degrees of freedom. Here, we report a surprising discovery of a nonvolatile superlattice memory effect in monolayer TaIrTe4, a dual quantum spin Hall insulator, where information is encoded through sharply contrasting lattice periodicities. In particular, in a pristine monolayer, we observe the spontaneous emergence of a long-period superlattice that can be programmed ON and OFF in a nonvolatile manner by electrostatic tuning of low-energy electronic states. This switching toggles the system between two structural configurations with unit cell areas differing by nearly two orders of magnitude. Mechanistically, our results reveal two independent and distinct instabilities, one in the lattice and the other in the QSH electrons, which are coupled, leading to electrostatic control of lattice configurations with nonvolatile memory. This finding is enabled by combining linear and nonlinear transport measurements, Raman spectroscopy, and scanning tunneling microscopy, which probe complementary aspects of the underlying orders. Remarkably, this nonvolatile memory effect stabilizes a spontaneous superlattice with a periodicity on the few-nanometer scale that remains robust across a wide doping range, persists over days, and survives above 70 K. Combined with the QSH topology, this stability offers a promising route to nonvolatile memory control of topological flat bands and their filling enabled quantum states. Our preliminary data indeed show the emergence of new insulating states at fractional superlattice fillings, which can be clearly switched ON and OFF together with the superlattice.

cond-mat.mes-hall↗

arXiv2026

Observation of spin-valley locked nodal lines in a quasi-2D altermagnet

The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples include ferromagnetic Weyl semimetals and antiferromagnetic axion insulators. Recently, altermagnets(AMs) have been identified as a distinct spin-splitting class of collinear antiferromagnets(AFMs), characterized by crystal symmetry that connects magnetic sublattices in real space and enforces C-paired spin-momentum locking in reciprocal space. These materials combine the advantages of nonrelativistic spin-polarization akin to FMs and vanished net-magnetization as AFMs, making them highly promising for spintronic applications. Furthermore, they introduce nontrivial spin-momentum locking spin texture as an additional degree of freedom for realizing novel quantum phases. In this work, we report the discovery of a new type of spin-valley-locked nodal line phase in the layered AM Rb-intercalated V{_2}Te{_2}O. By combining high-resolution spin and angle-resolved photoemission spectroscopy with first-principles calculations, we observe the coexistence of both spinless and spinful nodal lines near the Fermi level. Remarkably, the spinful nodal lines exhibit uniform spin polarization within each valley, while displaying opposite spin polarizations across symmetry-paired valleys-a unique feature we term spin-valley-locked nodal lines, which is exclusive to AMs. Direct measurements of out-of-plane band dispersion using a side-cleaving technique reveal the two-dimensional nature of these nodal lines. Our findings not only unveil a previously unexplored topological phase in AMs where valley-locked spin as an additional quantum character but also establish RbV{_2}Te{_2}O as a promising platform for spintronics, valleytronics, and moire-engineered quantum devices.

cond-mat.mtrl-sci↗

arXiv2025

Quantum Geometry Phenomena in Condensed Matter Systems

Quantum geometry, which describes the geometry of Bloch wavefunctions in solids, has become a cornerstone of modern quantum condensed matter physics. The quantum geometrical tensor encodes this geometry through two fundamental components: the quantum metric (real part) and the Berry curvature (imaginary part). While the Berry curvature gained prominence through its manifestation in the intrinsic anomalous Hall effect, recent advances have revealed equally significant effects arising from the quantum metric. This includes its signatures in nonlinear transport, superfluid density of flat-band superconductors, and nonlinear optical responses. These advances underscore how quantum geometry is reshaping our understanding of condensed matter systems, with far-reaching implications for future technologies. In this review, we survey recent progress in the field, focusing on both foundational concepts and emergent phenomena in transport and optics-with particular emphasis on the pivotal role of the quantum metric.

cond-mat.str-el↗

arXiv2025

Pressure-tunable phase transitions in atomically thin Chern insulator MnBi$_2$Te$_4$

Topological insulators lacking time-reversal symmetry can exhibit the quantum anomalous Hall effect. Odd-layer thick MnBi$_2$Te$_4$ is a promising platform due to its intrinsic magnetic nature, however, quantization is rarely observed in it. Our magnetoresistance measurements in the anti-ferromagnetic phase indicate, instead of a quantum anomalous Hall insulator, the presence of a trivial insulator state likely due to disorder, while at high magnetic field a Chern insulator state appears. By applying hydrostatic pressure we are able to tune the magnetic interactions and the characteristic energy scales in the phase diagram. The trivial band gap is reduced, suggesting the role of disorder decreases with the compression of the layers.

cond-mat.mes-hall↗

arXiv2025

Observation of the Axion quasiparticle in 2D MnBi$_2$Te$_4$

In 1978, Wilczek and Weinberg theoretically discovered a new boson-the Axion-which is the coherent oscillation of the $θ$ field in QCD. Its existence can solve multiple fundamental questions including the strong CP problem of QCD and the dark matter. However, its detection is challenging because it has almost no interaction with existing particles. Similar $θ$ has been introduced to condensed matter and so far studied as a static, quantized value to characterize topology of materials. But the coherent oscillation of $θ$ in condensed matter is proposed to lead to new physics directly analogous to the high-energy Axion particle, the dynamical Axion quasiparticle (DAQ). In this paper, we present the direct observation of the DAQ. By combining 2D electronic device with ultrafast pump-probe optics, we manage to measure the magnetoelectric coupling $θ$ ($θ\proptoα$) of 2D MnBi$_2$Te$_4$ with sub-picosecond time-resolution. This allows us to directly observe the DAQ by seeing a coherent oscillation of $θ$ at ~44 GHz in real time, which is uniquely induced by the out-of-phase antiferromagnetic magnon. Interestingly, in 2D MnBi$_2$Te$_4$, the DAQ arises from the magnon-induced coherent modulation of Berry curvature. Such ultrafast control of quantum wavefunction can be generalized to manipulate Berry curvature and quantum metric of other materials in ultrafast time-scale. Moreover, the DAQ enables novel quantum physics such as Axion polariton and electric control of ultrafast spin polarization, implying applications in unconventional light-matter interaction and coherent antiferromagnetic spintronics. Beyond condensed matter, the DAQ can serve as a detector of the dark matter Axion particle. We estimate the detection frequency range and sensitivity in the critically-lacking meV regime, contributing to one of the most challenging questions in fundamental physics.

cond-mat.mes-hall↗

arXiv2024

An antiferromagnetic diode effect in even-layered MnBi2Te4

In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics.

cond-mat.str-el↗

arXiv2024

Nonlinear optical diode effect in a magnetic Weyl semimetal

Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We show demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light.

cond-mat.mes-hall↗

arXiv2024

Observation of the dual quantum spin Hall insulator by density-tuned correlations in a van der Waals monolayer

The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH insulator with quantized edge conductance remains rare, let alone that with significant correlations. In this work, we report a novel dual QSH insulator within the intrinsic monolayer crystal of TaIrTe4, arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe4 demonstrates the QSH insulator that aligns with single-particle band structure calculations, manifesting enhanced nonlocal transport and quantized helical edge conductance. Interestingly, upon introducing electrons from charge neutrality, TaIrTe4 only shows metallic behavior in a small range of charge densities but quickly goes into a new insulating state, entirely unexpected based on TaIrTe4's single-particle band structure. This insulating state could arise from a strong electronic instability near the van Hove singularities (VHS), likely leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state, marked by the revival of nonlocal transport and quantized helical edge conduction. Our observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands via CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism.

cond-mat.mes-hall↗

arXiv2023

Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure

Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferromagnets. However, in contrast to Berry curvature, the quantum metric has rarely been explored. Here, we report a new nonlinear Hall effect induced by quantum metric by interfacing even-layered MnBi2Te4 (a PT-symmetric antiferromagnet (AFM)) with black phosphorus. This novel nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that suggests a non-dissipative nature. Like the AHE brought Berry curvature under the spotlight, our results open the door to discovering quantum metric responses. Moreover, we demonstrate that the AFM can harvest wireless electromagnetic energy via the new nonlinear Hall effect, therefore enabling intriguing applications that bridges nonlinear electronics with AFM spintronics.

cond-mat.mes-hall↗

arXiv2023

Electronic ratchet effect in a moiré system: signatures of excitonic ferroelectricity

Electronic ferroelectricity represents a new paradigm where spontaneous symmetry breaking driven by electronic correlations, in contrast to traditional lattice-driven ferroelectricity, leads to the formation of electric dipoles. Despite the potential application advantages arising from its electronic nature, switchable electronic ferroelectricity remains exceedingly rare. Here, we report the discovery of an electronic ratchet effect that manifests itself as switchable electronic ferroelectricity in a layer-contrasting graphene-boron nitride moiré heterostructure. Our engineered layer-asymmetric moiré potential landscapes result in layer-polarized localized and itinerant electronic subsystems. At particular fillings of the localized subsystem, we find a ratcheting injection of itinerant carriers in a non-volatile manner, leading to a highly unusual ferroelectric response. Strikingly, the remnant polarization can be stabilized at multiple (quasi-continuous) states with behavior markedly distinct from known ferroelectrics. Our experimental observations, simulations, and theoretical analysis suggest that dipolar excitons are the driving force and elementary ferroelectric units in our system. This signifies a new type of electronic ferroelectricity where the formation of dipolar excitons with aligned moments generates a macroscopic polarization and leads to an electronically-driven ferroelectric response, which we term excitonic ferroelectricity. Such new ferroelectrics, driven by quantum objects like dipolar excitons, could pave the way to innovative quantum analog memory and synaptic devices.

cond-mat.mes-hall↗

arXiv2023

Axion optical induction of antiferromagnetic order

Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics. In this paper, we report the surprising observation of helicity-dependent optical control of fully-compensated antiferromagnetic (AFM) order in 2D even-layered MnBi$_2$Te$_4$, a topological Axion insulator with neither chirality nor $M$. We further demonstrate helicity-dependent optical creation of AFM domain walls by double induction beams and the direct reversal of AFM domains by ultrafast pulses. The control and reversal of AFM domains and domain walls by light helicity have never been achieved in any fully-compensated AFM. To understand this optical control, we study a novel type of circular dichroism (CD) proportional to the AFM order, which only appears in reflection but is absent in transmission. We show that the optical control and CD both arise from the optical Axion electrodynamics, which can be visualized as a Berry curvature real space dipole. Our Axion induction provides the possibility to optically control a family of $\mathcal{PT}$-symmetric AFMs such as Cr$_2$O$_3$, CrI$_3$ and possibly novel states in cuprates. In MnBi$_2$Te$_4$, this further opens the door for optical writing of dissipationless circuit formed by topological edge states.

cond-mat.mes-hall↗

arXiv2022

Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5E_g/e with E_g the band gap of semiconductor. We develop a two-dimensional impact ionization model and uncover that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon (e-ph) scattering in the layered InSe flake. Our findings open up a promising avenue for developing novel weak-light detectors with low energy consumption and high sensitivity.

physics.app-ph↗

arXiv2021

Growth, characterization and Chern insulator state in MnBi$_2$Te$_4$ via the chemical vapor transport method

As the first intrinsic antiferromagnetic topological insulator, MnBi$_2$Te$_4$ has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi$_2$Te$_4$, as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi$_2$Te$_4$ via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi$_2$Te$_4$ is marked with higher Mn occupancy on the Mn site, slightly higher Mn$_{\rm{Bi}}$ antisites, smaller carrier concentration and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm$^2$V$\cdot$s in MnBi$_2$Te$_4$ devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Our study provides a new route to obtain high-quality single crystals of MnBi$_2$Te$_4$ that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous hall effect, etc.

cond-mat.mtrl-sci↗

arXiv2021

Layer Hall effect in a 2D topological Axion antiferromagnet

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential.

cond-mat.mtrl-sci↗

arXiv2020

Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate a prototype vision sensor that operates via the gate-tunable positive and negative photoresponses of the van der Waals (vdW) vertical heterostructures. The sensor emulates not only the neurobiological functionalities of bipolar cells and photoreceptors but also the unique synaptic connectivity between bipolar cells and photoreceptors. By tuning gate voltage for each pixel, we achieve reconfigurable vision sensor for simultaneously image sensing and processing. Furthermore, our prototype vision sensor itself can be trained to classify the input images, via updating the gate voltages applied individually to each pixel in the sensor. Our work indicates that vdW vertical heterostructures offer a promising platform for the development of neural network vision sensor.

cond-mat.mtrl-sci↗

arXiv2019

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it has been challenging to synthesize semiconducting nanowires directly on SiO2/Si substrate due to lattice mismatch. Here, we developed a catalysis-free approach to achieve direct synthesis of long and straight InSe nanowires on SiO2/Si substrate through edge-homoepitaxial growth. We further achieved parallel InSe nanowires on SiO2/Si substrate through controlling growth conditions. We attributed the underlying growth mechanism to selenium self-driven vapor-liquid-solid process, which is distinct from conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, we demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A/W, ultrahigh detectivity of 1.57*10^14 Jones and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2/Si substrate.

physics.app-ph↗

arXiv2019

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the observation of ballistic avalanche phenomena in sub-MFP scaled vertical indium selenide (InSe)/black phosphorus (BP) heterostructures. The heterojunction is engineered to avalanche photodetectors (APD) and impact ionization transistors, demonstrating ultra-sensitive mid-IR light detection (4 μm wavelength) and ultra-steep subthreshold swing, respectively. These devices show an extremely low avalanche threshold (<1 volt), excellent low noise figures and distinctive density spectral shape. Further transport measurement evidences the breakdown originals from a ballistic avalanche phenomenon, where the sub-MFP BP channel enables both electrons and holes to impact-ionize the lattice and abruptly amplify the current without scattering from the obstacles in a deterministic nature. Our results shed light on the development of advanced photodetectors and efficiently facilitating carriers on the nanoscale.

cond-mat.mtrl-sci↗

arXiv2018

Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor

Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterostructures. Here we report the observation of the NPC in ReS2/h-BN/MoS2 vdW heterostructures-based floating gate phototransistor. The fabricated devices exhibit excellent performance of nonvolatile memory without light illumination. More interestingly, we observe a gate-tunable transition between the PPC and the NPC under the light illumination. The observed NPC phenomenon can be attributed to the charge transfer between floating gate and conduction channel. Furthermore, we show that the control of NPC through light intensity is promising in realization of light-tunable multi-bit memory devices. Our results may enable potential applications in multifunctional memories and optoelectronic devices.

cond-mat.mes-hall↗