Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Zhiyi Zhang; Bin Cheng; Jeremy Lim; Anyuan Gao; Lingyuan Lyu; Tianju Cao; Shuang Wang; Zhu-An Li; Qingyun Wu; L. K. Ang; Yee Sin Ang; Shi-Jun Liang; Feng Miao

arXiv · 2211.06573

Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Zhiyi Zhang·Bin Cheng·Jeremy Lim·Anyuan Gao·Lingyuan Lyu·Tianju Cao·Shuang Wang·Zhu-An Li·Qingyun Wu·L. K. Ang·Yee Sin Ang·Shi-Jun Liang·Feng Miao

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Abstract

Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report that an ultra-high avalanche gain of 3*10^5 can be realized in the graphite/InSe Schottky photodetector at a breakdown voltage down to 5.5 V. Remarkably, the threshold breakdown voltage can be further reduced down to 1.8 V by raising the operating temperature, approaching the theoretical limit of 1.5E_g/e with E_g the band gap of semiconductor. We develop a two-dimensional impact ionization model and uncover that observation of high gain at low breakdown voltage arises from reduced dimensionality of electron-phonon (e-ph) scattering in the layered InSe flake. Our findings open up a promising avenue for developing novel weak-light detectors with low energy consumption and high sensitivity.

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Zhiyi Zhang, Bin Cheng, Jeremy Lim, Anyuan Gao, Lingyuan Lyu, Tianju Cao, Shuang Wang, Zhu-An Li, Qingyun Wu, L. K. Ang, Yee Sin Ang, Shi-Jun Liang, Feng Miao. 2022-11-12. Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector. https://arxiv.org/abs/2211.06573

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