arXiv subjects

Arijit Kayal

Publications and source records attributed to Arijit Kayal.

8 recordsLinked to original sources

arXiv2026

Investigating Sulfur Vacancy Passivation in Monolayer MoS2 FETs via Optically Coupled Low-Frequency Electrical Noise Spectroscopy

Transition metal dichalcogenide monolayers are promising materials for electronic and photonic applications, yet the performance of chemical vapour deposition grown films is severely limited by native sulphur vacancies that introduce mid-gap trap states, degrade carrier mobility, and elevate electrical noise. Here we investigate octane thiol passivation of sulphur vacancies in monolayer MoS2 field effect transistors, combining x-ray photoelectron spectroscopy, photoluminescence, and Raman scattering with electrical transport and optically coupled low-frequency noise spectroscopy. Thiol treatment reduces the sulphur vacancy concentration from 7.5% to 5%, which increases the channel resistance 35-fold while restoring gate switching with an on/off ratio of 10^4 and improving field-effect mobility from 1 to 5 cm^2/Vs. Low frequency noise spectroscopy directly quantifies the defect suppression: the Hooge parameter drops by more than two orders of magnitude after passivation. Gate-dependent noise confirms carrier mobility fluctuation as the dominant dark noise mechanism, while optical excitation drives a crossover to carrier number fluctuation dominated noise, reflecting preferential interaction of photogenerated carriers with residual vacancy states via generation-recombination trapping, a mechanistic distinction inaccessible to gate- bias measurements alone. Density functional theory calculations corroborate these findings, showing suppression of vacancy-induced mid-gap states by more than 50% and partial restoration of the intrinsic bandgap. These results establish optically coupled low-frequency noise spectroscopy as a sensitive, low-cost, and non-destructive tool for quantifying defect passivation in TMDC-based devices.

cond-mat.mtrl-sci↗

arXiv2026

Interplay of Cl Substitution and He$^{+}$ Irradiation in CrSBr$_{1-x}$Cl$_{x}$

Two-dimensional magnetic semiconductors provide a promising platform for exploring the interplay between disorder, lattice dynamics, and resonant light--matter interactions. Among them, CrSBr exhibits strong in-plane anisotropy and pronounced resonance-enhanced Raman scattering. Here, we investigate the effects of Cl substitution and He$^{+}$ irradiation on the vibrational response of CrSBr using polarization-resolved Raman spectroscopy. Cl substitution activates additional phonon modes associated with local symmetry breaking, while He$^{+}$ irradiation introduces distinct defect-related scattering channels and enhanced phonon broadening. The combined effects of alloy disorder and externally introduced defects lead to strong anisotropic reconstruction of the Raman spectra and modification of the nonlinear Raman response under near-resonant 1.96 eV excitation. Power-dependent measurements reveal robust superlinear scaling of both intrinsic and substitution-induced phonon modes, indicating persistent resonance-enhanced electron--phonon coupling even in defect-engineered samples.

cond-mat.mes-hall↗

arXiv2026

The Topography Trap: Sifting Interlayer Excitons from Strain-Related Artifacts in Real-World 2D Hetrostructures

Novel excitonic phenomena emerging in transition metal dichalcogenide (TMDC) heterostructures belong to the most exciting topics in contemporary physics of van der Waals materials. Interlayer excitons (IXs) stand out among those due to their long radiative lifetimes and tunability by electric fields, strain, and twist angle. However, many ambiguities persist in the optical identification and manipulation of IXs, highlighting the need for reliable spectroscopic criteria that distinguish interlayer species from spurious signals. Here, we present a decision-tree protocol that evaluates interlayer coupling via intralayer exciton quenching and correlates photoluminescence (PL) with atomic force microscopy (AFM) to correctly assign room-temperature PL features in TMDC-based heterostructures. Applying this protocol, we identify momentum-direct IX between the K valleys of the two layers (KK-IX) in MoS2-MoSe2 and MoS2-WSe2 heterostructures at room temperature. In contrast, our protocol contests the reported bright, momentum-indirect, twist-angle-independent $\Gamma$K-IX in MoS2-WSe2. Comprehensive experimental data, including infrared and tip-enhanced photoluminescence (TEPL) with sub-diffraction-limited resolution, show no compelling evidence for this excitonic species, despite numerous reports. Instead, the spectroscopic features previously assigned to this $\Gamma$K-IX originate from locally strained WSe2 at topographical inhomogeneities of the heterostructure interface, underscoring the need for robust, spatially resolved characterization of real-world samples in this highly accessible field and providing a generally applicable framework for identifying interlayer excitons in 2D semiconductor heterostructures.

cond-mat.mes-hall↗

arXiv2026

Machine Learning Assisted Reconstruction of Local Electronic Structure of Non-Uniformly Strained MoS2

Wrinkles and nanobubbles are an integral and often unavoidable part of integrating 2D van der Waals semiconductors into actual device architectures. Despite their ubiquitous nature, quantitative correlation between such spatially non-uniform strain and modifications to the local electronic structure remains challenging. Here, density functional theory is combined with a recurrent neural network to reconstruct the local electronic structure of monolayer MoS2 from strain maps derived from atomic force microscopy (AFM) topography and Raman spectral maps. The analysis reveals that biaxial bending induced strain is significantly more effective than both uniaxial bending or in-plane strain in modifying electronic and dielectric properties. A ~ 0.35% strain induced by biaxial bending results in ~ 22% reduction in band gap and ~ 7% increase in dielectric constant, compared to a ~ 5% reduction in band gap and ~ 1% increase in dielectric constant under comparable uniaxial bending. The modified band structure reveals band edge states that concentrate charge in regions of high curvature or strain. While conductive AFM measurements indicate increased local conductance (carrier density) at wrinkles and nanobubbles, the spatial band gap maps predicted by the model are validated against experimental photoluminescence peak energy maps. The results indicate that strained features like wrinkles and nanobubbles commonly present in real devices influence the band gap, carrier distribution, and dielectric response, which favourably affects electrical transport in such systems. The framework developed here can be readily extended to other 2D materials and heterostructures, offering a computationally efficient route for studying and exploiting strain effects.

cond-mat.mtrl-sci↗

arXiv2023

Photo-thermoelectrics of a distributed Schottky junction system: Delineating the photo and thermal currents

Hybrid materials, consisting of diverse materials combined in various configurations, exhibit intriguing opto-electronic properties and are a focal point of research in functional materials. However, achieving precise predictability and tunability of their macroscopic properties in terms of the control parameters remains a challenge. One promising approach involves leveraging self-organization through eutectic growth and subsequent engineering via annealing to engineer niche properties. Here, the electronic properties of eutectic NiTiO$_3$-TiO$_2$ samples and their H$_2$-reduced counterpart Ni-TiO$_2$ are investigated, where the latter features high aspect ratio TiO$_2$ nanostructures decorated with nodular Ni globules. By exploiting this unique architecture and capitalizing on the nanostructuring processes alongside material properties, performance enhancement of photoactive devices is shown. Further, the competing mechanisms of photo-driven and photo-thermal-driven transport is delineated to characterize the overall photo-response of the system. The ability for self-powered functionality further showcases this approach as a promising strategy for developing efficient self-powered devices.

physics.app-ph↗

arXiv2023

Mobility enhancement in CVD-grown monolayer MoS2 via patterned substrate induced non-uniform straining

The extraordinary mechanical properties of 2D TMDCs make them ideal candidates for investigating strain-induced control of various physical properties. Here we explore the role of non-uniform strain in modulating optical, electronic and transport properties of semiconducting, chemical vapour deposited monolayer MoS2, on periodically nanostructured substrates. A combination of spatially resolved spectroscopic and electronic properties explore and quantify the differential strain distribution and carrier density on a monolayer, as it conformally drapes over the periodic nanostructures. The observed accumulation in electron density at the strained regions is supported by theoretical calculations which form the likely basis for the ensuing 60x increase in field effect mobility in strained samples. Though spatially non-uniform, the pattern induced strain is shown to be readily controlled by changing the periodicity of the nanostructures thus providing a robust yet useful macroscopic control on strain and mobility in these systems.

cond-mat.mtrl-sci↗

arXiv2021

Symmetric Domain Segmentation in WS2 Flakes: Correlating spatially resolved photoluminescence, conductance with valley polarization

The incidence of intra-flake heterogeneity of spectroscopic and electrical properties in chemical vapour deposited (CVD) WS2 flakes is explored in a multi-physics investigation, via spatially resolved spectroscopic maps correlated with electrical, electronic and mechanical properties. The investigation demonstrates that the three-fold symmetric segregation of spectroscopic response (photoluminescence and Raman (spectral and intensity)), in topographically uniform WS2 flakes are accompanied by commensurate segmentation of electronic properties e.g. local carrier density and the differences in the mechanics of tip-sample interactions, evidenced via scanning probe microscopy phase maps. Overall, the differences are understood to originate from point defects, namely sulphur vacancies within the flake along with a dominant role played by the substrate. While evolution of the multi-physics maps upon sulphur annealing elucidates the role played by S-vacancy, substrate-induced effects are investigated by contrasting data from WS2 flake on Si and Au surfaces. Local charge depletion induced by the nature of the sample-substrate junction in case of WS2 on Au is seen to invert the electrical response with comprehensible effects on their spectroscopic properties. Finally, the role of these optoelectronic properties in preserving valley polarization, affecting valleytronic applications, in WS2 flakes is investigated via circular polarisation discriminated photoluminescence experiments. The study provides a thorough understanding of spatial heterogeneity in optoelectronic properties of WS2 and other two dimensional transition metal chalcogenides, which are critical for device fabrication and potential applications.

cond-mat.mtrl-sci↗

arXiv2020

Controlling the macroscopic electrical properties of reduced graphene oxide by nanoscale writing of electronic channels

The allure of all carbon electronics stems from the spread in physical properties, across all its allotropes. The scheme also harbours unique challenges, like tunability of band-gap, variability of doping and defect control. Here, we explore the technique of scanning probe tip induced nanoscale reduction of graphene oxide (GO), which nucleates conducting, sp2 rich graphitic regions on the insulating GO background. Flexibility of direct writing is supplemented with control over degree of reduction and tunability of bandgap, through macroscopic control parameters. The fabricated reduced - GO channels and ensuing devices are investigated via spectroscopic, and temperature and bias dependent electrical transport and correlated with spatially resolved electronic properties, using surface potentiometry. Presence of carrier localization effects, induced by the phase-separated sp2/sp3 domains, and large local electric field fluctuations are reflected in the non-linear transport across the channels. Together the results indicate a complex transport phenomena which may be variously dominated by tunnelling, variable range hopping or activated depending on the electronic state of the material.

cond-mat.mes-hall↗