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Arindam Ghosh

Publications and source records attributed to Arindam Ghosh.

At least 55 records · Page 3Linked to original sources

Mis-orientation controlled cross-plane thermoelectricity in twisted bilayer graphene

The introduction of 'twist' or relative rotation between two atomically thin van der Waals (vdW) membranes gives rise to periodic Moire potential, leading to a substantial altercation of the band structure of the planar assembly. While most of the recent experiments primarily focus on the electronic-band hybridization by probing in-plane transport properties, here we report out-of-plane thermoelectric measurements across the van der Waals gap in twisted bilayer graphene (tBLG), which exhibits an interplay of twist-dependent inter-layer electronic and phononic hybridization. We show that at a large twist angle, the thermopower is entirely driven by a novel phonon drag effect at the sub-nanometer scale, while the electronic component of the thermopower is recovered only when the misorientation between the layers is reduced to less than two degrees. Our experiment shows that cross-plane thermoelectricity at a low angle is exceptionally sensitive to the nature of band dispersion and may provide fundamental insights into the coherence of electronic states in twisted bilayer graphene.

cond-mat.mes-hall↗

Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions

Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. However, the deposition of rutile oxides, such as VO$_2$, with atomic-layer precision has been challenging. In this work, we used pulsed laser deposition (PLD) to grow atomically-smooth VO$_2$ thin films on rutile TiO$_2$ (101) substrates. We show that optimal substrate preparation procedure followed by the deposition of VO$_2$ films at a temperature conducive for step-flow growth mode is essential for achieving atomically-smooth VO$_2$ films. The films deposited at optimal substrate temperatures show a step and terrace structure of the underlying TiO$_2$ substrate. At lower deposition temperatures, there is a transition to a mixed growth mode comprising of island growth and layer-by-layer growth modes. VO$_2$ films deposited at optimal substrate temperatures undergo a metal to insulator transition at a transition temperature of $\sim$325 K with $\sim$10$^3$ times increase in resistance, akin to MIT in bulk VO$_2$.

cond-mat.mtrl-sci↗

Optimising Graphene Visibility in van der Waals Heterostructures

Graphene constitutes one of the key elements in many functional van der Waals heterostructures. However, it has negligible optical visibility due to its monolayer nature. Here we study the visibility of graphene in various van der Waals heterostructures and include the effects of the source spectrum, oblique incidence and the spectral sensitivity of the detector to obtain a realistic model. A visibility experiment is performed at different wavelengths, resulting in a very good agreement with our calculations. This allows us to reliably predict the conditions for better visibility of graphene in van der Waals heterostructures. The framework and the codes provided in this work can be extended to study the visibility of any 2D material within an arbitrary van der Waals heterostructure.

cond-mat.mes-hall↗

Current-voltage characteristics in Ag/Au nanostructures at resistive transitions

Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias resistance and magnetic transition in these films have been reported recently, the non-equilibrium current-voltage ($I-V$) transport characteristics at the transition remains unexplored. Here we report the $I-V$ characteristics at zero magnetic field of a prototypical Ag/Au nanocluster film close to its resistivity transition at the critical temperature $T_{C}$ of $\approx160$ K. The $I-V$ characteristics become strongly hysteretic close to the transition and exhibit a temperature-dependent critical current scale beyond which the resistance increases rapidly. Intriguingly, the non-equilibrium transport regime consists of a series of nearly equispaced resistance steps when the drive current exceeds the critical current. We have discussed the similarity of these observations with resistive transitions in ultra-thin superconducting wires via phase slip centres.

cond-mat.mes-hall↗

Coexistence of Diamagnetism and Vanishingly Small Electrical Resistance at Ambient Temperature and Pressure in Nanostructures

The great practical utility has motivated extensive efforts to discover ultra-low resistance electrical conductors and superconductors in ambience. Here we report the observation of vanishingly small electrical resistance at the ambient temperature and pressure conditions in films and pellets of a nanostructured material that is composed of silver particles embedded into a gold matrix. Upon cooling below a sample-specific temperature scale ($T_{C}$) as high as $286$ K, the film resistance drops below $\sim 2μΩ$, being limited by measurement uncertainty. The corresponding resistivity ($\sim 10^{-12}$ $Ω$.m) is at least four orders of magnitude below that of elemental noble metals, such as gold, silver or copper. Furthermore, the samples become strongly diamagnetic below $T_{C}$, with volume susceptibilities as low as -0.056. We additionally describe methods to tune $T_{C}$ to temperatures much higher than room temperature.

cond-mat.supr-con↗

Low temperature saturation of phase coherence length in topological insulators

Implementing topological insulators as elementary units in quantum technologies requires a comprehensive understanding of the dephasing mechanisms governing the surface carriers in these materials, which impose a practical limit to the applicability of these materials in such technologies requiring phase coherent transport. To investigate this, we have performed magneto-resistance (MR) and conductance fluctuations\ (CF) measurements in both exfoliated and molecular beam epitaxy grown samples. The phase breaking length ($l_ϕ$) obtained from MR shows a saturation below sample dependent characteristic temperatures, consistent with that obtained from CF measurements. We have systematically eliminated several factors that may lead to such behavior of $l_ϕ$ in the context of TIs, such as finite size effect, thermalization, spin-orbit coupling length, spin-flip scattering, and surface-bulk coupling. Our work indicates the need to identify an alternative source of dephasing that dominates at low $T$ in topological insulators, causing saturation in the phase breaking length and time.

cond-mat.mes-hall↗

Signature of pseudo-diffusive transport in mesoscopic topological insulators

One of the unique features of Dirac Fermions is pseudo-diffusive transport by evanescent modes at low Fermi energies when the disorder is low. At higher Fermi energies i.e. carrier densities, the electrical transport is diffusive in nature and the propagation occurs via plane-waves. In this study, we report the detection of such evanescent modes in the surface states of topological insulator through 1/f noise. While signatures of pseudo-diffusive transport have been seen experimentally in graphene, such behavior is yet to be observed explicitly in any other system with a Dirac dispersion. To probe this, we have studied 1/f noise in topological insulators as a function of gate-voltage, and temperature. Our results show a non-monotonic behavior in 1=f noise as the Fermi energy is varied, suggesting a crossover from pseudo-diffusive to diffusive transport regime in mesoscopic topological insulators. The temperature dependence of noise points towards conductance fluctuations from quantum interference as the dominant source of the noise in these samples.

cond-mat.mes-hall↗

A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing

As one of the most important members of the two dimensional chalcogenide family, molybdenum disulphide (MoS2) has played a fundamental role in the advancement of low dimensional electronic, optoelectronic and piezoelectric designs. Here, we demonstrate a new approach to solid state synaptic transistors using two dimensional MoS2 floating gate memories. By using an extended floating gate architecture which allows the device to be operated at near-ideal subthreshold swing of 77 mV/decade over four decades of drain current, we have realised a charge tunneling based synaptic memory with performance comparable to the state of the art in neuromorphic designs. The device successfully demonstrates various features of a biological synapse, including pulsed potentiation and relaxation of channel conductance, as well as spike time dependent plasticity (STDP). Our device returns excellent energy efficiency figures and provides a robust platform based on ultrathin two dimensional nanosheets for future neuromorphic applications.

physics.app-ph↗

Periodic X-ray Modulation and its relation with orbital elements in Compact Binaries

Stellar companion of a black hole orbiting in an eccentric orbit will experience modulating tidal force with a periodicity same as that of the orbital period. This, in turn, would modulate accretion rates, and the seed photon flux which are inverse Comptonized to produce harder X-rays. By analyzing complete all sky monitor (ASM) data (1.5-12 keV) of RXTE and all sky survey data (15-50 keV) of Swift/BAT we discover this periodicity in several objects. We also estimate eccentricities from the RMS power of the peak around quasi-orbital periods (QOP). Our method provides an independent way to obtain time periods and eccentricities of such compact binaries.

astro-ph.HE↗

Marginally Self-Averaging One-Dimensional Localization in Bilayer Graphene

The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in ln g with the varying chemical potential, in strongly insulating bilayer graphene (BLG) decay nearly logarithmically for channel length up to L/$ξ$ ${\approx}$ 20, where $ξ$ is the localization length. This 'marginal' self averaging, and the corresponding dependence of on L, suggest that transport in strongly gapped BLG occurs along strictly one-dimensional channels, where $ξ$ ${\approx}$ 0.5${\pm}$0.1 $μ$m was found to be much longer than that expected from the bulk bandgap. Our experiment reveals a nontrivial localization mechanism in gapped BLG, governed by transport along robust edge modes.

cond-mat.mes-hall↗

Does Cyg X-1 have a small Standard Accretion Disc?

We analyze several outbursts of a few transient sources using Proportional Counter Array (PCA) data (2.5-25 keV) as well as All Sky Monitor (ASM) data (1.5-12 keV) of Rossi X-ray Timing Explorer (RXTE) satellite. We find a time delay between the arrival times of the Keplerian disc component and the halo of the Two-Component Advective Flow (TCAF) when the spectral data is fitted with TCAF solution. We compare this time delay from the spectral fits with the TCAF solution of the transient low mass X-ray binaries (LMXBs) e.g., GX 339-4, H 1743-322 and MAXI J1836-194 with that of the high mass X-ray Binary (HMXB), Cyg X-1. We find that several days of time delays are observed in LMXBs while for Cyg X-1 the delay is negligible. We interpret the large delay to be due to the viscous delay of a large Keplerian component to reach the inner region as compared to nearly free-fall time taken by the low angular momentum halo component. The delay is of the order of a few days for the low mass X-ray binaries (LMXBs) where the feeding is primarily through the Roche-lobe. However, it is negligible in a wind-fed system like Cyg X-1 since a very small Keplerian disc is created here by slowly redistributing the low angular momentum of the wind. As a consequence, sporadic soft or intermediate spectral states are observed.

astro-ph.HE↗

Signature of Two-Component Advective Flow in several Black Hole candidates obtained through time-of-arrival analysis of RXTE/ASM Data

We study several Galactic black hole candidates using long-time RXTE/ASM X-ray data to search for telltale signatures of differences in viscous timescales in the two components used in the Two-Component Advective Flow (TCAF) paradigm. In high-mass X-ray binaries (HMXBs) mainly winds are accreted. This nearly inviscid and dominant sub-Keplerian flow falls almost freely towards the black hole. A standard Keplerian disc can form out of this sub-Keplerian matter in presence of a significant viscosity and could be small in size. However, in low-mass X-ray binaries (LMXBs), highly viscous and larger Keplerian accretion disc is expected to form inside the sub-Keplerian disc due to the Roche-lobe overflow. Due to two viscous timescales in these two components, it is expected to have a larger lag between the times-of-arrival of these components in LMXBs than that in HMXBs. Direct cross-correlation between the photon fluxes will not reveal this lag/delay since they lack linear dependence; however, they are coupled through the viscous processes which bring in both matter. To quantify the aforesaid time lag, we introduce an index (Θ), which is a proxy of the usual photon index (Γ). Thus, when Θ, being dynamically responsive to both fluxes, is considered as a reference, the arrival time lag between the two fluxes in LMXBs is found to be much larger than that in HMXBs. Our result establishes the presence of two dynamical components in accretion and shows that the Keplerian disc size indeed is smaller in HMXBs as compared to that in LMXBs.

astro-ph.HE↗

Anomalous Outbursts of H 1743-322

Using black body and power-law photon counts of All Sky Monitor (ASM) in Rossi X-ray Timing Explorer (RXTE) satellite it has been established recently by us that there is a significant time lag between the infall timescales of two components in the Two-Component Advective Flow (TCAF) paradigm, where a standard slow moving Keplerian disc is surrounded by a fast moving halo. The time lag is clearly due to the difference in viscosity in the flow components and the size of the Keplerian disc may be considered to be proportional to the arrival time lag. In this paper, using RXTE/ASM (1.5-12 keV) data, we examine eight successive outbursts of the low-mass X-ray binary H 1743-322 since 2003 from a new angle. A dynamic photon index, Θ indicates that the size of the Keplerian disc is biggest during the brightest outburst of 2003. The size diminishes thereafter during subsequent weaker outbursts. These results are corroborated when two energy fluxes corresponding to the two flows are cross-correlated with reference to Θ. Moreover, Θ decides spectral transitions of any outburst. We show from the behaviour of Θ alone that the outburst of October 2008 was an anomalous outburst. In fact, each normal outburst was either preceded or followed by an otherwise premature outburst. This makes H 1743-322 an enigmatic source and a subject of further study.

astro-ph.HE↗

Bulk-impurity induced noise in large-area epitaxial thin films of topological insulators

We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy grown thin (10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within the bulk valence band, the temperature dependence reveals a clear signature of generation-recombination noise in the defect states in the bulk band gap. However, when the Fermi energy is tuned to the bulk band gap, the gate voltage dependence of noise shows that the resistance fluctuations in surface transport are caused by correlated mobility-number density fluctuations due to the activated defect states present in the bulk of the topological insulator crystal with a density of D$_{it}=3.2\times10^{17}$ cm$^2$eV$^{-1}$. In the presence of a magnetic field, noise in these materials follows a parabolic dependence, which is qualitatively similar to mobility and charge-density fluctuation noise in non-degenerately doped trivial semiconductors. Our studies reveal that even in thin films of (Bi,Sb)$_2$Te$_3$ with thickness as low as 10 nm, the intrinsic bulk defects are the dominant source of noise.

cond-mat.mes-hall↗

Universal conductance fluctuations and direct observation of crossover of symmetry classes in topological insulators

A key feature of topological insulators (TI) is symplectic symmetry of the Hamiltonian which changes to unitary when time reversal symmetry is lifted and the topological phase transition occurs. However, such a crossover has never been explicitly observed, by directly probing the symmetry class of the Hamiltonian. In this report, we have probed the symmetry class of topological insulators by measuring the mesoscopic conductance fluctuations in the TI Bi$_{1.6}$Sb$_{0:4}$Te$_2$Se, which shows an exact factor of two reduction on application of a magnetic field due to crossover from symplectic to unitary symmetry classes. The reduction provides an unambiguous proof that the fluctuations arise from the universal conductance fluctuations (UCF), due to quantum interference and persists from T = 22 mK to 4.2 K. We have also compared the phase breaking length (l$_ϕ$) extracted from both magneto-conductivity and UCF which agree well within a factor of two in the entire temperature and gate voltage range. Our experiment confirms UCF as the major source of fluctuations in mesoscopic disordered topological insulators, and the intrinsic preservation of time reversal symmetry in these systems.

cond-mat.mes-hall↗

Performance Analysis of MRC under Spatially Correlated Interference using Mixture-based Method

Effect of interference correlation on wireless systems is often studied by modeling the locations of interferers as a Poisson Point Process (PPP). However, in many cases, the complicated nature of this correlation limits the analytical tractability of the PPP-based approach. For example, for an interference-aware $N$-antenna Maximum-Ratio Combining (MRC) receiver, the analytical expression for outage probability is available only for $N=2$. For $N>2$, the exact analysis using standard PPP-based approach becomes intractable because of which one has to either resort to bounds or to simulations. In this letter, we overcome this issue and derive the MRC outage probability for an arbitrary $N$ by employing the mixture-based method of modeling the correlation in the interference powers. This method offers a much simpler analytical structure to the correlated interference, thereby lending analytical tractability to such analyses. The mixture parameter ($q$) is tuned based on the matching of joint Signal-to-Interference Ratio (SIR) statistics, which results in a very accurate mixture-based result. The tightness of these approximations is verified using Monte Carlo simulations.

cs.IT↗

Remarks on Jordan derivations over matrix algebras

Let C be a commutative ring with unity. In this article, we show that every Jordan derivation over an upper triangular matrix algebra T_n(C) is an inner derivation. Further, we extend the result for Jordan derivation on full matrix algebra M_n(C).

math.RA↗