arXiv subjects
Publications and source records attributed to Arindam Ghosh.
In this article, we show that every Jordan {g, h}-derivation over T_n(C) is a {g, h}-derivation under an assumption, where C is a commutative ring with unity 1 not equal to 0. We give an example of a Jordan {g, h}-derivation over T_n(C) which is not a {g, h}-derivation. Also, we study Jordan {g, h}-derivation over M_n(C).
In this article, left {g, h}-derivation and Jordan left {g, h}-derivation on algebras are introduced. It is shown that there is no Jordan left {g, h}-derivation over $\mathcal{M}_n(C)$ and $\mathbb{H}_{\mathbb{R}}$, for g not equal to h. Examples are given which show that every Jordan left $\{g, h\}$-derivation over $\mathcal{T}_n(C)$, $\mathcal{M}_n(C)$ and $\mathbb{H}_{\mathbb{R}}$ are not left $\{g, h\}$-derivations. Moreover, we characterize left $\{g, h\}$-derivation and Jordan left $\{g, h\}$-derivation over $\mathcal{T}_n(C)$, $\mathcal{M}_n(C)$ and $\mathbb{H}_{\mathbb{R}}$ respectively. Also, we prove the result of Jordan left $\{g, h\}$-derivation to be a left $\{g, h\}$-derivation over tensor products of algebras as well as for algebra of polynomials.
When two planar atomic membranes are placed within the van der Waals distance, the charge and heat transport across the interface are coupled by the rules of momentum conservation and structural commensurability, leading to outstanding thermoelectric properties. Here we show that an effective "interlayer phonon drag" determines the Seebeck coefficient (S) across the van der Waals gap formed in twisted bilayer graphene (tBLG). The cross-plane thermovoltage, which is non-monotonic in both temperature and density, is generated through scattering of electrons by the out-of-plane layer breathing (ZO'/ZA2) phonon modes and differs dramatically from the expected Landauer-Buttiker formalism in conventional tunnel junctions. The tunability of the cross-plane Seebeck effect in van der Waals junctions may be valuable in creating a new genre of versatile thermoelectric systems with layered solids.
Depression is a major debilitating disorder which can affect people from all ages. With a continuous increase in the number of annual cases of depression, there is a need to develop automatic techniques for the detection of the presence and extent of depression. In this AVEC challenge we explore different modalities (speech, language and visual features extracted from face) to design and develop automatic methods for the detection of depression. In psychology literature, the PHQ-8 questionnaire is well established as a tool for measuring the severity of depression. In this paper we aim to automatically predict the PHQ-8 scores from features extracted from the different modalities. We show that visual features extracted from facial landmarks obtain the best performance in terms of estimating the PHQ-8 results with a mean absolute error (MAE) of 4.66 on the development set. Behavioral characteristics from speech provide an MAE of 4.73. Language features yield a slightly higher MAE of 5.17. When switching to the test set, our Turn Features derived from audio transcriptions achieve the best performance, scoring an MAE of 4.11 (corresponding to an RMSE of 4.94), which makes our system the winner of the AVEC 2017 depression sub-challenge.
As the interference in PPP based wireless networks exhibit spatial correlation, any joint analysis involving multiple spatial points either end up with numerical integrations over $\mathbb{R}^2$ or become analytically too intractable. To tackle these issues, we present an alternate approach which not only offers a simpler analytical structure, but also closely mimics the PPP characteristics. This approach at its core models the correlated interferences using a correlation framework constructed using random variable mixtures. Additionally, a correlation framework based on the more standard method of linear combination of random variables is also presented for comparison purpose. The performance of these models is studied by deriving the joint CCDF of SIRs at $N$ arbitrary points. The plots are found to tightly approximate the exact PPP-based results, with the tightness depending on the values of $λp$ (interferer intensity), $α$ (path loss exponent) and $N$. The applicability of the mixture-based model is also shown for a multi-antennae MRC receiver where only major derivation steps that simplifies the outage probability analysis are shown.
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000$~$cm$^{2}$V$^{-1}$s$^{-1}$. Our phenomenological model for contact noise due to current crowding in purely two dimensional conductors, confirms that the contacts dominate the measured resistance noise in all graphene field effect transistors in the two-probe or invasive four probe configurations, and surprisingly, also in nearly noninvasive four probe (Hall bar) configuration in the high mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two dimensional material-based electronic devices.
Galactic black hole candidates GRS 1915+105 and IGR J17091-3624 have many similarities in their light curves and spectral properties. However, very little is known about the orbital elements of their companions. In case the orbits are eccentric, tidal forces by the black hole on the companion can cause modulations of accretion rates in orbital time scale. We look for these modulations in the light curves of these two objects and find that their periodicities are around 28.3 d (29.0 d) and 32.2 d respectively. Eccentricities are at the most 0.071 and 0.46 respectively. We conclude that both these objects have long orbital periods and are eccentric. This could be a reason why light curves have several similar variability class transitions as reported in the literature.
Variation of mass supply rate from the companion can be smeared out by viscous processes inside an accretion disk. By the time the flow reaches the inner edge, the variation in X-rays needs not reflect the true variation of the rate at the outer edge. However, if the viscosity fluctuates around a mean value, one would expect the viscous time scale also to spread around a mean value. In HMXBs, the size of the viscous Keplerian disk is smaller & thus such a spread could be lower as compared to the LMXBs. If there is an increasing or decreasing trend in viscosity, the interval between enhanced emission would be modified systematically. In the absence of a full knowledge about the variation of mass supply rates at the outer edge, we study ideal circumstances where modulation must take place exactly in orbital time scales when there is an ellipticity in the orbit. We study a few compact binaries using long term RXTE/ASM(1.5-12 keV) & Swift/BAT(15-50keV) data to look for such effects & to infer what these results can tell us about the viscous processes inside the respective disks. We employ three different methods to seek imprints of periodicity on the X-ray variation & found that in all the cases, the location of the peak in the power density spectra is consistent with the orbital frequencies. Interestingly, in HMXBs the peaks are sharp with high rms values, consistent with a small Keplerian disk in a wind fed system. However, in LMXBs with larger Keplerian disk, the peaks are spread out with much lower rms values. X-ray reflections, or superhump phenomena which may also cause such X-ray modulations would not be affected by the size of the Keplerian disk. Our result confirms different sizes of Keplerian disks in 2 classes of binaries. If the orbital period of a binary system is not known, it may be obtained with reasonable accuracy for HMXBs & with lesser accuracy for LMXBs by our method.
A density matrix based analytical model is developed to study the coherent probe field propagation through a four-level V type system in presence of a coherent control field. The model allows coupling of the probe field from the upper ground level to both of the excited levels keeping the control field locked to a particular transition. The addition of an extra ground level to a conventional three-level V type system creates extra decay paths to the ground levels for the upper level population. A set of sixteen density matrix based equations are formed and then solved analytically under rotating wave approximation to study the probe response under steady state condition. The simulated probe absorption spectra shows absorption dip at the centre of a transparency window only under Doppler broadened condition although the conventional EIT window appears under Doppler free condition. The dependence of the field induced absorption signal on the Rabi frequency of the control field, population transfer rate among the ground levels and temperature of the vapour medium has been studied in details.
We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at room temperature. With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultra-thin WSe2 and MoS2 FETs on insulating SiO2 substrates, where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution. From the experimentally observed exponents in the scaling of noise magnitude with conductivity, we observe unambiguous signatures of percolation in random resistor network, particularly in WSe2 FETs close to switching, which crosses over to continuum percolation at a higher doping level. We demonstrate a powerful experimental probe to the microscopic nature of near-threshold electrical transport in TMDC FETs, irrespective of the material detail, device geometry or carrier mobility, which can be extended to other classes of 2D material-based devices as well.
Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of $\mathrm{SmNiO_3}$ using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to co-existence of the metallic and insulating phases. Our experiment offers a new insight on the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rare-earth nickelates.
The interaction between the Fermi sea of conduction electrons and a non-adiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observation of FES for Dirac Fermions in graphene driven by isolated Coulomb impurities in the conduction channel. In high-mobility graphene devices on hexagonal boron nitride substrates, the FES manifests in abrupt changes in conductance with a large magnitude $\approx e^{2}/h$ at resonance, indicating total many-body screening of a local Coulomb impurity with fluctuating charge occupancy. Furthermore, we exploit the extreme sensitivity of graphene to individual Coulomb impurities, and demonstrate a new defect-spectroscopy tool to investigate strongly correlated phases in graphene in the quantum Hall regime.
Scattering of charge carriers and flicker noise in electrical transport are the central performance limiting factors in electronic devices, but their microscopic origin in molybdenum disulphide~(MoS$_2$)-based field effect transistors remains poorly understood. Here, we show that both carrier scattering and low-frequency $1/f$ noise in mechanically exfoliated ultra-thin MoS$_2$ layers are determined by the localized trap states located within the MoS$_2$ channel itself. The trap states not only act as Coulomb scattering centers that determine transport in both equilibrium ($eV< k_BT$) and non-equilibrium ($eV>k_BT$) regimes, where $V$ and $T$ are the source drain bias and temperature respectively, but also exchange carriers with the channel to produce the conductivity noise. The internal origin of the trap states was further confirmed by studying noise in MoS$_2$ films deposited on crystalline boron nitride substrates. Possible origin and nature of the trap states is also discussed.
Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sensitive to photo illumination due to the optical bandgap in MoS$_2$. Despite significant advances in device architectures with both graphene and MoS$_2$, binary graphene-MoS$_2$ hybrids have not been realized so far, and the promising opto-electronic properties of such structures remain elusive. Here we demonstrate experimentally that graphene-on-MoS$_2$ binary heterostructures display an unexpected and remarkable persistent photoconductivity under illumination of white light. The photoconductivity can not only be tuned independently with both light intensity and back gate voltage, but in response to a suitable combination of light and gate voltage pulses the device functions as a re-writable optoelectronic switch or memory. The persistent, or `ON', state shows virtually no relaxation or decay within the the experimental time scales for low and moderate photoexcitation intensity, indicating a near-perfect charge retention. A microscopic model associates the persistence with strong localization of carriers in MoS$_2$. These effects are also observable at room temperature, and with chemical vapour deposited graphene, and hence are naturally scalable for large area applications.
We probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultra-thin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transitions. The extent of non-Gaussianity was found to be bounded by the BKT and mean field transition temperatures and depend strongly on the roughness and structural inhomogeneity of the superconducting films. Our experiment outlines a novel fluctuation-based kinetic probe in detecting the nature of superconductivity in disordered low-dimensional materials.
We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited at high $V_{DS}$ and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage ($V_c$) was also determined. The density of trap states was quantitatively calculated from $V_c$. The possible origin of exponential trap distribution in these devices is also discussed.
We present thermal and electrical transport measurements of low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the supposedly strongly localised regime, where the electrical resistivity of the system is two orders of magnitude greater than the quantum of resistance $h/e^2$, the thermopower decreases linearly with temperature indicating metallicity. Remarkably, the magnitude of the thermopower exceeds the predicted value in non-interacting metallic 2DESs at similar carrier densities by over two orders of magnitude. Our results indicate a new quantum state and possibly a novel class of itinerant quasiparticles in dilute 2DESs at low temperatures where the Coulomb interaction plays a pivotal role.
Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read-heads. We show that a colossal non-saturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field reaching nearly 10,000% at 8 Tesla, thus surpassing many known non-magnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems a new and attractive candidate for on-chip magnetic field sensing.