arXiv subjects

Armando Rastelli

Publications and source records attributed to Armando Rastelli.

At least 91 records · Page 5Linked to original sources

arXiv2019

Resolving the temporal evolution of line broadening in quantum emitters

Light emission from solid-state quantum emitters is inherently prone to environmental decoherence, which results in an inhomogeneous line broadening and in the deterioration of photon indistinguishability. Here we employ photon correlation Fourier spectroscopy (PCFS) to study the temporal evolution of such a broadening for the biexciton and exciton emission in resonantly driven GaAs quantum dots. Differently from previous experiments, the time scales we probe range from a few nanoseconds to milliseconds and, simultaneously, the spectral resolution we achieve can be as small as 2 $μ$eV. We find pronounced differences in the temporal evolution of the two lines, which we attribute to differences in their homogeneous linewidth and sensitivity to charge noise. We then analyze the effect of irradiation with additional white light, which reduces blinking at the cost of enhanced charge noise. Due to its robustness against experimental imperfections and its high temporal resolution and bandwidth, PCFS outperforms established spectroscopy techniques, such as Michelson interferometry. We discuss its practical implementation, its limitations, and the possibility to use it to estimate the indistinguishability of consecutively emitted single photons for applications in quantum communication and photonic-based quantum information processing.

cond-mat.mes-hall↗

arXiv2019

Single-Particle-Picture Breakdown in laterally weakly confining GaAs Quantum Dots

We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization- and magnetic field-dependent $μ$-photoluminescence measurements, which allow us to identify different excited states of the quantum dot system. Besides that, we present a comprehensive analysis of g-factors and diamagnetic coefficients of charged and neutral excitonic states in Voigt and Faraday configuration. Supported by theoretical calculations by the Configuration interaction method, we show that the widely used single-particle Zeeman Hamiltonian cannot be used to extract reliable values of the g-factors of the constituent particles from excitonic transition measurements.

cond-mat.mes-hall↗

arXiv2019

Strain-tunable Single Photon Sources in WSe2 Monolayers

The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid 2D-semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner, while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and in particular the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.

cond-mat.mes-hall↗

arXiv2019

Strain tunable single-photon source based on a quantum dot-micropillar system

Scalable quantum photonic architectures demand highly efficient, high-purity single-photon sources, which can be frequency matched via external tuning. We demonstrate a single-photon source based on an InAs quantum dot embedded in a micropillar resonator, which is frequency tunable via externally-applied stress. Our platform combines the advantages of a Bragg micropillar cavity and the piezo-strain-tuning technique enabling single photon spontaneous emission enhancement via the Purcell effect and quantum dot (QD) with tunable wavelength. Our optomechanical platform has been implemented by integration of semiconductor-based QD-micropillars on a piezoelectric substrate. The fabricated device exhibits spontaneous emission enhancement with a Purcell factor of 4.4$\pm$0.7 and allows for a pure triggered single-photon generation with $g^{(2)}(0)$ < 0.07 under resonant excitation. A quantum dot emission energy tuning range of 0.75 meV for 27 kV/cm applied to the piezo substrate has been achieved. Our results pave the way towards the scalable implementation of single-photon quantum photonic technologies using optoelectronic devices.

cond-mat.mes-hall↗

arXiv2019

Quantum dot optomechanics in suspended nanophononic strings

The optomechanical coupling of quantum dots and flexural mechanical modes is studied in suspended nanophononic strings. The investigated devices are designed and monolithically fabricated on an (Al)GaAs heterostructure. Radio frequency elastic waves with frequencies ranging between $f$=250 MHz to 400 MHz are generated as Rayleigh surface acoustic waves on the unpatterned substrate and injected as Lamb waves in the nanophononic string. Quantum dots inside the nanophononic string exhibit a 15-fold enhanced optomechanical modulation compared to those dynamically strained by the Rayleigh surface acoustic wave. Detailed finite element simulations of the phononic mode spectrum of the nanophononic string confirm, that the observed modulation arises from valence band deformation potential coupling via shear strain. The corresponding optomechanical coupling parameter is quantified to $0.15 \mathrm{meV nm^{-1}}$. This value exceeds that reported for vibrating nanorods by approximately one order of magnitude at 100 times higher frequencies. Using this value, a derive vertical displacements in the range of 10 nm is deduced from the experimentally observed modulation. The results represent an important step towards the creation of large scale optomechanical circuits interfacing single optically active quantum dots with optical and mechanical waves.

cond-mat.mes-hall↗

arXiv2019

A frequency-tunable nanomembrane mechanical oscillator with embedded quantum dots

Hybrid systems consisting of a quantum emitter coupled to a mechanical oscillator are receiving increasing attention for fundamental science and potential applications in quantum technologies. In contrast to most of the presented works, in which the oscillator eigenfrequencies are irreversibly determined by the fabrication process, we present here a simple approach to obtain frequency-tunable mechanical resonators based on suspended nanomembranes. The method relies on a micromachined piezoelectric actuator, which we use both to drive resonant oscillations of a suspended Ga(Al)As membrane with embedded quantum dots and to fine tune their mechanical eigenfrequencies. Specifically, we excite oscillations with frequencies of at least 60 MHz by applying an AC voltage to the actuator and tune the eigenfrequencies by at least 25 times their linewidth by continuously varying the elastic stress state in the membranes through a DC voltage. The light emitted by optically excited quantum dots is used as sensitive local strain gauge to monitor the oscillation frequency and amplitude. We expect that our method has the potential to be applicable to other optomechanical systems based on dielectric and semiconductor membranes possibly operating in the quantum regime.

physics.app-ph↗

arXiv2019

Slow and fast light behavior of single photons from a quantum dot interacting with the excited state hyperfine structure of the Cesium D1-line

Hybrid interfaces between distinct quantum systems play a major role in the implementation of quantum networks. Quantum states have to be stored in memories to synchronize the photon arrival times for entanglement swapping by projective measurements in quantum repeaters or for entanglement purification. Here, we analyze the distortion of a single photon wave packet propagating through a dispersive and absorptive medium with high spectral resolution. Single photons are generated from a single In(Ga)As quantum dot with its excitonic transition precisely set relative to the Cesium D1 transition. The delay of spectral components of the single photon wave packet with almost Fourier-limited width is investigated in detail with a 200 MHz narrow-band monolithic Fabry-Pérot resonator. Reflecting the excited state hyperfine structure of Cesium, "slow light" and "fast light" behavior is observed. As a step towards room-temperature alkali vapor memories, quantum dot photons are delayed for 5 ns by strong dispersion between the two 1.17 GHz hyperfine-split excited state transitions. Based on optical pumping on the hyperfine-split ground states, we propose a simple, all-optically controllable delay for synchronization of heralded narrow-band photons in a quantum network.

quant-ph↗

arXiv2019

A solid-state entangled photon pair source with high brightness and indistinguishability

The generation of high-quality entangled photon pairs has been being a long-sought goal in modern quantum communication and computation. To date, the most widely-used entangled photon pairs are generated from spontaneous parametric downconversion, a process that is intrinsically probabilistic and thus relegated to a regime of low pair-generation rates. In contrast, semiconductor quantum dots can generate triggered entangled photon pairs via a cascaded radiative decay process, and do not suffer from any fundamental trade-off between source brightness and multi-pair generation. However, a source featuring simultaneously high photon-extraction efficiency, high-degree of entanglement fidelity and photon indistinguishability has not yet been reported. Here, we present an entangled photon pair source with high brightness and indistinguishability by deterministically embedding GaAs quantum dots in broadband photonic nanostructures that enable Purcell-enhanced emission. Our source produces entangled photon pairs with a record pair collection probability of up to 0.65(4) (single-photon extraction efficiency of 0.85(3)), entanglement fidelity of 0.88(2), and indistinguishabilities of 0.901(3) and 0.903(3), which immediately creates opportunities for advancing quantum photonic technologies.

quant-ph↗

arXiv2019

Highly indistinguishable single photons from incoherently and coherently excited GaAs quantum dots

Semiconductor quantum dots are converging towards the demanding requirements of photonic quantum technologies. Among different systems, quantum dots with dimensions exceeding the free-exciton Bohr radius are appealing because of their high oscillator strengths. While this property has received much attention in the context of cavity quantum electrodynamics, little is known about the degree of indistinguishability of single photons consecutively emitted by such dots and on the proper excitation schemes to achieve high indistinguishability. A prominent example is represented by GaAs quantum dots obtained by local droplet etching, which recently outperformed other systems as triggered sources of entangled photon pairs. On these dots, we compare different single-photon excitation mechanisms, and we find (i) a "phonon bottleneck" and poor indistinguishability for conventional excitation via excited states and (ii) photon indistinguishablilities above 90% for both strictly resonant and for incoherent acoustic- and optical-phonon-assisted excitation. Among the excitation schemes, optical phonon-assisted excitation enables straightforward laser rejection without a compromise on the source brightness together with a high photon indistinguishability.

cond-mat.mes-hall↗

arXiv2019

Resonance fluorescence of GaAs quantum dots with near-unity photon indistinguishability

Photonic quantum technologies call for scalable quantum light sources that can be integrated, while providing the end user with single and entangled photons on-demand. One promising candidate are strain free GaAs/AlGaAs quantum dots obtained by droplet etching. Such quantum dots exhibit ultra low multi-photon probability and an unprecedented degree of photon pair entanglement. However, different to commonly studied InGaAs/GaAs quantum dots obtained by the Stranski-Krastanow mode, photons with a near-unity indistinguishability from these quantum emitters have proven to be elusive so far. Here, we show on-demand generation of near-unity indistinguishable photons from these quantum emitters by exploring pulsed resonance fluorescence. Given the short intrinsic lifetime of excitons confined in the GaAs quantum dots, we show single photon indistinguishability with a raw visibility of $V_{raw}=(94.2\pm5.2)\,\%$, without the need for Purcell enhancement. Our results represent a milestone in the advance of GaAs quantum dots by demonstrating the final missing property standing in the way of using these emitters as a key component in quantum communication applications, e.g. as an entangled source for quantum repeater architectures.

cond-mat.mes-hall↗

arXiv2019

Entanglement swapping with photons generated on-demand by a quantum dot

Photonic entanglement swapping, the procedure of entangling photons without any direct interaction, is a fundamental test of quantum mechanics and an essential resource to the realization of quantum networks. Probabilistic sources of non-classical light can be used for entanglement swapping, but quantum communication technologies with device-independent functionalities demand for push-button operation that, in principle, can be implemented using single quantum emitters. This, however, turned out to be an extraordinary challenge due to the stringent requirements on the efficiency and purity of generation of entangled states. Here we tackle this challenge and show that pairs of polarization-entangled photons generated on-demand by a GaAs quantum dot can be used to successfully demonstrate all-photonic entanglement swapping. Moreover, we develop a theoretical model that provides quantitative insight on the critical figures of merit for the performance of the swapping procedure. This work shows that solid-state quantum emitters are mature for quantum networking and indicates a path for scaling up.

quant-ph↗

arXiv2018

Micromachining of PMN-PT Crystals with Ultrashort Laser Pulses

Lead-magnesium niobate lead-titanate (PMN-PT) has been proven as an excellent material for sensing and actuating applications. The fabrication of advanced ultra-small PMN-PT-based devices relies on the availability of sophisticated procedures for the micro-machining of PMN-PT thin films or bulk substrates. Approaches reported up to date include chemical etching, excimer laser ablation and ion milling. To ensure an excellent device performance, a key mandatory feature for a micro-machining process is to preserve as far as possible the crystalline quality of the substrates; in other words, the fabrication method must induce a low density of cracks and other kind of defects. In this work, we demonstrate a relatively fast procedure for the fabrication of high-quality PMN-PT micro-machined actuators employing green femtosecond laser pulses. The fabricated devices feature absence of extended cracks and well defined edges with relatively low roughness, which is advantageous for the further integration of nanomaterials onto the piezoelectric actuators.

physics.app-ph↗

arXiv2018

On-demand generation of background--free single photons from a solid-state source

True on--demand high--repetition--rate single--photon sources are highly sought after for quantum information processing applications. However, any coherently driven two-level quantum system suffers from a finite re-excitation probability under pulsed excitation, causing undesirable multi--photon emission. Here, we present a solid--state source of on--demand single photons yielding a raw second--order coherence of $g^{(2)}(0)=(7.5\pm1.6)\times10^{-5}$ without any background subtraction nor data processing. To this date, this is the lowest value of $g^{(2)}(0)$ reported for any single--photon source even compared to the previously best background subtracted values. We achieve this result on GaAs/AlGaAs quantum dots embedded in a low--Q planar cavity by employing (i) a two--photon excitation process and (ii) a filtering and detection setup featuring two superconducting single--photon detectors with ultralow dark-count rates of $(0.0056\pm0.0007) s^{-1}$ and $(0.017\pm0.001) s^{-1}$, respectively. Re--excitation processes are dramatically suppressed by (i), while (ii) removes false coincidences resulting in a negligibly low noise floor.

cond-mat.mes-hall↗

arXiv2018

High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy

Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the quantum emitters. However, the fraction of the entanglement-ready quantum dots that can be fabricated with this method is still limited to around 5%, and matching the energy of the entangled photons to atomic transitions (a promising route towards quantum networking) remains an outstanding challenge. Here, we overcome these obstacles by introducing a modified approach to droplet epitaxy on a high symmetry (111)A substrate, where the fundamental crystallization step is performed at a significantly higher temperature as compared to previous reports. Our method drastically improves the yield of entanglement-ready photon sources near the emission wavelength of interest, which can be as high as 95% due to the low values of fine structure splitting and radiative lifetime, together with the reduced exciton dephasing offered by the choice of GaAs/AlGaAs materials. The quantum dots are designed to emit in the operating spectral region of Rb-based slow-light media, providing a viable technology for quantum repeater stations.

cond-mat.mes-hall↗

arXiv2018

Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics

The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that the quantization axis of gallium arsenide dots can be flipped into the growth plane via moderate in plane uniaxial stress. By using piezoelectric strain actuators featuring strain-amplification we study the evolution of the selection rules and excitonic fine-structure in a regime, in which quantum confinement can be regarded as a perturbation compared to strain in determining the symmetry properties of the system. The experimental and computational results suggest that uniaxial stress, may be the right tool to obtain quantum light sources with ideally oriented transition dipoles and enhanced oscillator strengths for integrated quantum photonics.

quant-ph↗

arXiv2018

Semiconductor quantum dots as an ideal source of polarization entangled photon pairs on-demand: a review

More than 80 years passed since the first publication on entangled quantum states. In this period of time the concept of spookily interacting quantum states became an emerging field of science. After various experiments proving the existence of such non-classical states, visionary ideas were put forward to exploit entanglement in quantum information science and technology. These novel concepts have not yet come out of the experimental stage, mostly because of the lack of suitable, deterministic sources of entangled quantum states. Among many systems under investigation, semiconductor quantum dots are particularly appealing emitters of on-demand, single polarization-entangled photon-pairs. Although, it was originally believed that quantum dots must exhibit a limited degree of entanglement related to numerous decoherence effects present in the solid-state. Recent studies invalidated the premise of unavoidable entanglement degrading effects. We review the relevant experiments which have led to these important discoveries and discuss the remaining challenges for the anticipated quantum technologies.

quant-ph↗

arXiv2018

Effect of second order piezoelectricity on excitonic structure of stress-tuned InGaAs/GaAs quantum dots

We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a piezoelectric actuator. In particular, we investigate in detail the contributions of various elements of the expansion of the electrical polarization in terms of externally induced elastic strain on the latter two important quantum dot properties. Based on the comparison of the effects of first- and second-order piezoelectricity we provide a simple relation to estimate the influence of applied anisotropic stress on the quantum dot dipole moment for quantum dots significantly lattice mismatched to the host crystal.

cond-mat.mes-hall↗

arXiv2018

Strain-Tunable GaAs Quantum dot: A Nearly Dephasing-Free Source of Entangled Photon Pairs on Demand

Entangled photon generation from semiconductor quantum dots via the biexciton-exciton cascade underlies various decoherence mechanisms related to the solid-state nature of the quantum emitters. So far, this has prevented the demonstration of nearly-maximally entangled photons without the aid of inefficient and complex post-selection techniques that are hardly suitable for quantum communication technologies. Here, we tackle this challenge using strain-tunable GaAs quantum dots driven under two-photon resonant excitation and with strictly-degenerate exciton states. We demonstrate experimentally that our on-demand source generates polarization-entangled photons with fidelity of 0.978(5) and concurrence of 0.97(1) without resorting to post-selection techniques. Moreover, we show that the remaining decoherence mechanisms can be overcome using a modest Purcell enhancement so as to achieve a degree of entanglement >0.99. Our results highlight that GaAs quantum dots can be readily used in advanced communication protocols relying on the non-local properties of quantum entanglement.

quant-ph↗