arXiv subjects

Arne Brataas

Publications and source records attributed to Arne Brataas.

At least 217 records · Page 12Linked to original sources

arXiv2003

Dynamic exchange coupling in magnetic bilayers

A long-ranged dynamic interaction between ferromagnetic films separated by normal-metal spacers is reported, which is communicated by nonequilibrium spin currents. It is measured by ferromagnetic resonance (FMR) and explained by an adiabatic spin-pump theory. In FMR the spin-pump mechanism of spatially separated magnetic moments leads to an appreciable increase in the FMR line width when the resonance fields are well apart, and results in a dramatic line-width narrowing when the FMR fields approach each other.

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arXiv2003

Dynamic stiffness of spin valves

The dynamics of the magnetic order parameters of ferromagnet/normal-metal/ferromagnet spin valves and isolated ferromagnets may be very different. We investigate the role of the nonequilibrium spin-current exchange between the ferromagnets in the magnetization precession and switching. We find a (low-temperature) critical current bias for a coherent current-induced magnetization excitation in spin valves, which unifies and generalizes previous ideas of Slonczewski and Berger. In the absence of an applied bias, the effect of the spin transfer can be expressed as magnetic--configuration-dependent Gilbert damping.

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arXiv2003

The spin-torque transistor

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin-valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required.

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arXiv2003

From Digital to Analogue Magnetoelectronics: Theory of Transport in Non-Collinear Magnetic Nanostructures

Magnetoelectronics is mainly digital, i.e. governed by up and down magnetizations. In contrast, analogue magnetoelectronics makes use of phenomena occuring for non-collinear magnetization configurations. Here we review theories which have recently been applied to the transport in non-collinear magnetic nanostructures in two and multiterminal structures, viz. random matrix and circuit theory. Both are not valid for highly transparent systems in a resistive environment like perpendicular metallic spin valves. The solution to this problem is a renormalization of the conventional and spin-mixing conductance parameters.

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arXiv2003

Dynamic exchange coupling and Gilbert damping in magnetic multilayers

We theoretically study dynamic properties of thin ferromagnetic films in contact with normal metals. Moving magnetizations cause a flow of spins into adjacent conductors, which relax by spin flip, scatter back into the ferromagnet, or are absorbed by another ferromagnet. Relaxation of spins outside the moving magnetization enhances the overall damping of the magnetization dynamics in accordance with the Gilbert phenomenology. Transfer of spins between different ferromagnets by these nonequilibrium spin currents leads to a long-ranged dynamic exchange interaction and novel collective excitation modes. Our predictions agree well with recent ferromagnetic-resonance experiments on ultrathin magnetic films.

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arXiv2003

Kondo effect and spin filtering in triangular artificial atoms

We study strongly correlated states in triangular artificial atoms. Symmetry-driven orbital degeneracy of the single particle states can give rise to an SU(4) Kondo state with entangled orbital and spin degrees of freedom, and a characteristic phase shift $δ= π/4$. Upon application of a Zeeman field, a purely orbital Kondo state is formed with somewhat smaller Kondo temperature and a fully polarized current through the device. The Kondo temperatures are in the measurable range. The triangular atom also provides a tool to systematically study the singlet-triplet transitions observed in recent experiments.

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arXiv2002

Spin pumping and magnetization dynamics in metallic multilayers

We study the magnetization dynamics in thin ferromagnetic films and small ferromagnetic particles in contact with paramagnetic conductors. A moving magnetization vector causes \textquotedblleft pumping\textquotedblright of spins into adjacent nonmagnetic layers. This spin transfer affects the magnetization dynamics similar to the Landau-Lifshitz-Gilbert phenomenology. The additional Gilbert damping is significant for small ferromagnets, when the nonmagnetic layers efficiently relax the injected spins, but the effect is reduced when a spin accumulation build-up in the normal metal opposes the spin pumping. The damping enhancement is governed by (and, in turn, can be used to measure) the mixing conductance or spin-torque parameter of the ferromagnet--normal-metal interface. Our theoretical findings are confirmed by agreement with recent experiments in a variety of multilayer systems.

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arXiv2002

Shot noise in ferromagnet--normal metal systems

A semiclassical theory of the low frequency shot noise in ferromagnet - normal metal systems is formulated. Non-collinear magnetization directions of the ferromagnetic leads, arbitrary junctions and the elastic and inelastic scattering regimes are considered. The shot noise is governed by a set of mesoscopic parameters that are expressed in terms of the microscopic details of the junctions in the circuit. Explicit results in the case of ballistic, tunnel, and diffusive junctions are evaluated. The shot noise, the current and the Fano factor are calculated for a double barrier ferromagnet - normal metal - ferromagnet system. It is demonstrated that the shot noise can have a non-monotonic behavior as a function of the relative angle between the magnetizations of the ferromagnetic reservoirs.

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arXiv2002

Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems

We calculate the current and the spin-torque in small symmetric double tunnel barrier ferromagnet - superconductor - ferromagnet (F-S-F) systems. Spin-accumulation on the superconductor governs the transport properties when the spin-flip relaxation time is longer than the transport dwell time. In the elastic transport regime, it is demonstrated that the relative change in the current (spin-torque) for F-S-F systems equals the relative change in the current (spin-torque) for F-N-F systems upon changing the relative magnetization direction of the two ferromagnets. This differs from the results in the inelastic transport regime where spin-accumulation suppresses the superconducting gap and dramatically changes the magnetoresistance [S. Takahashi, H. Imamura, and S. Maekawa, Phys. Rev. Lett. 82, 3911 (1999)]. The experimental relevance of the elastic and inelastic transport regimes, respectively, as well as the reasons for the change in the transport properties are discussed.

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arXiv2002

Enhanced Gilbert Damping in Thin Ferromagnetic Films

Using a scattering matrix approach, the precession of the magnetization of a ferromagnet is shown to transfer spins into adjacent normal metal layers. This ``pumping'' of spins slows down the precession corresponding to an enhanced Gilbert damping factor in the Landau-Lifshitz equation. The damping is expressed in terms of the scattering matrix of the ferromagnet-normal metal interface, which is accessible to model and first-principles calculations. Our estimates for permalloy thin films explain the trends observed in recent experiments.

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arXiv2002

Spin-transfer in diffusive ferromagnet-normal metal systems with spin-flip scattering

The spin-transfer in biased disordered ferromagnet (F) - normal metal (N) systems is calculated by the diffusion equation. For F1-N2-F2 and N1-F1-N2-F2-N3 spin valves, the effect of spin-flip processes in the normal metal and ferromagnet parts are obtained analytically. Spin-flip in the center metal N2 reduces the spin-transfer, whereas spin-flip in the outer normal metals N1 and N3 can increase it by effectively enhancing the spin polarization of the device.

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arXiv2002

Spin battery operated by ferromagnetic resonance

Precessing ferromagnets are predicted to inject a spin current into adjacent conductors via Ohmic contacts, irrespective of a conductance mismatch with, for example, doped semiconductors. This opens the way to create a pure spin source spin battery by the ferromagnetic resonance. We estimate the spin current and spin bias for different material combinations.

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arXiv2002

Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids

The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of disordered F/N/F perpendicular spin valves as a function of the angle between magnetization vectors is shown to obey a simple universal law. The spin-current induced magnetization torque can be measured by the angular magnetoresistance of these spin valves. The results are generalized to arbitrary magnetoelectronic circuits.

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arXiv2001

Linear response conductance and magneto-resistance of ferromagnetic single-electron transistors

The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs. Coulomb charging energy. The magneto-resistance of ferromagnet-normal metal-ferromagnet (F-N-F) SET's is almost independent of the Coulomb charging energy and is only reduced when the transport dwell time is longer than the spin-flip relaxation time. In all-ferromagnetic (F-F-F) SET's with negligible spin-flip relaxation time the magneto-resistance is calculated analytically at high temperatures and numerically at low temperatures. The F-F-F magneto-resistance is enhanced by higher order tunneling processes at low temperatures in the 'off' state when the induced charges vanishes. In contrast, in the 'on' state near resonance the magneto-resistance ratio is a non-monotonic function of the inverse temperature.

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arXiv2001

Spin-transport in multi-terminal normal metal - ferromagnet systems with non-collinear magnetizations

A theory of spin-transport in hybrid normal metal - ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters. Microscopic expression for these conductances are derived in terms of scattering matrices and explicitly calculated for simple models. The circuit theory is applied to 2-terminal and 3-terminal devices attached to ferromagnetic reservoirs.

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arXiv2001

Spin-Flip Transistor

The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be controlled by the magnetization of a ``base'' reservoir up to distances of the order of the spin-flip diffusion length.

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arXiv2000

Semiclassical Concepts in Magnetoelectronics

Semiclassical theories of electron and spin transport in metallic magnetic structures are reviewed with emphasis on the role of disorder and electronic band structures in the current perpendicular to the interface plane (CPP) transport configuration.

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arXiv2000

Conductance modulation by spin precession in non-collinear ferromagnet-normal metal-ferromagnet systems

We study diffusive transport through ferromagnet - normal metal - ferromagnet (F-N-F) systems, with arbitrary but fixed magnetization directions of the ferromagnetic reservoirs and orientations of a magnetic field applied to the normal metal. For non-collinear configurations, the complex mixing conductance describes the transport of spins non-collinear to the magnetizations of the ferromagnetic reservoirs. When the imaginary part of the mixing conductance is different from zero, the total conductance of the system in the presence of a magnetic field can be asymmetric with respect to time reversal. The total conductance changes non-monotonically with the magnetic field strength for different magnetic configurations. This modulation of the conductance is due to the precession of the spin accumulation in the normal metal. The difference between the conductance of the parallel and antiparallel configurations can be either positive or negative as a function of the applied magnetic field. This effect should be best observable on Al single crystals attached to ferromagnetic electrodes by means of tunnel junctions or metallic contacts.

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