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Arne Laucht

Publications and source records attributed to Arne Laucht.

At least 37 records · Page 2Linked to original sources

Spin Qubits with Scalable milli-kelvin CMOS Control

A key virtue of spin qubits is their sub-micron footprint, enabling a single silicon chip to host the millions of qubits required to execute useful quantum algorithms with error correction. With each physical qubit needing multiple control lines however, a fundamental barrier to scale is the extreme density of connections that bridge quantum devices to their external control and readout hardware. A promising solution is to co-locate the control system proximal to the qubit platform at milli-kelvin temperatures, wired-up via miniaturized interconnects. Even so, heat and crosstalk from closely integrated control have potential to degrade qubit performance, particularly for two-qubit entangling gates based on exchange coupling that are sensitive to electrical noise. Here, we benchmark silicon MOS-style electron spin qubits controlled via heterogeneously-integrated cryo-CMOS circuits with a low enough power density to enable scale-up. Demonstrating that cryo-CMOS can efficiently enable universal logic operations for spin qubits, we go on to show that mill-kelvin control has little impact on the performance of single- and two-qubit gates. Given the complexity of our milli-kelvin CMOS platform, with some 100-thousand transistors, these results open the prospect of scalable control based on the tight packaging of spin qubits with a chiplet style control architecture.

quant-ph↗

Bounds to electron spin qubit variability for scalable CMOS architectures

Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and developing theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.

quant-ph↗

A Room-Temperature Solid-State Maser Amplifier

Masers once represented the state-of-the-art in low noise microwave amplification technology, but eventually became obsolete due to their need for cryogenic cooling. Masers based on solid-state spin systems perform most effectively as amplifiers, since they provide a large density of spins and can therefore operate at relatively high powers. Whilst solid-state masers oscillators have been demonstrated at room temperature, continuous-wave amplification in these systems has only ever been realized at cryogenic temperatures. Here we report on a continuous-wave solid-state maser amplifier operating at room temperature. We achieve this feat using a practical setup that includes an ensemble of nitrogen-vacancy center spins in a diamond crystal, a strong permanent magnet and simple laser diode. We describe important amplifier characteristics including gain, bandwidth, compression power and noise temperature and discuss the prospects of realizing a room-temperature near-quantum-noise-limited amplifier with this system. Finally, we show that in a different mode of operation the spins can be used to cool the system noise in an external circuit to cryogenic levels, all without the requirement for physical cooling.

quant-ph↗

Assessment of error variation in high-fidelity two-qubit gates in silicon

Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We leverage this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of these operations by analysing the physical errors and fidelities in multiple devices through numerous trials and extended periods to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise. The identification of the noise sources can be used to maintain performance within tolerance as well as inform future device fabrication. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results are achieved by using three different characterization methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools identify the causes of qubit degradation and offer ways understand their physical mechanisms. These results highlight both the capabilities and challenges for the scaling up of silicon spin-based qubits into full-scale quantum processors.

quant-ph↗

Entangling gates on degenerate spin qubits dressed by a global field

Coherently dressed spins have shown promising results as building blocks for future quantum computers owing to their resilience to environmental noise and their compatibility with global control fields. This mode of operation allows for more amenable qubit architecture requirements and simplifies signal routing on the chip. However, multi-qubit operations, such as qubit addressability and two-qubit gates, are yet to be demonstrated to establish global control in combination with dressed qubits as a viable path to universal quantum computing. Here we demonstrate simultaneous on-resonance driving of degenerate qubits using a global field while retaining addressability for qubits with equal Larmor frequencies. Furthermore, we implement SWAP oscillations during on-resonance driving, constituting the demonstration of driven two-qubit gates. Significantly, our findings highlight the fragility of entangling gates between superposition states and how dressing can increase the noise robustness. These results represent a crucial milestone towards global control operation with dressed qubits. It also opens a door to interesting spin physics on degenerate spins.

cond-mat.mes-hall↗

All-electron $\mathrm{\textit{ab-initio}}$ hyperfine coupling of Si-, Ge- and Sn-vacancy defects in diamond

Colour centres in diamond are attractive candidates for numerous quantum applications due to their good optical properties and long spin coherence times. They also provide access to the even longer coherence of hyperfine coupled nuclear spins in their environment. While the NV centre is well studied, both in experiment and theory, the hyperfine couplings in the more novel centres (SiV, GeV, and SnV) are still largely unknown. Here we report on the first all-electron \textit{ab-initio} calculations of the hyperfine constants for SiV, GeV, and SnV defects in diamond, both for the respective defect atoms ($^{29}$Si, $^{73}$Ge, $^{117}$Sn, $^{119}$Sn), as well as for the surrounding $^{13}$C atoms. Furthermore, we calculate the nuclear quadrupole moments of the GeV defect. We vary the Hartree-Fock mixing parameter for Perdew-Burke-Ernzerhof (PBE) exchange correlation functional and show that the hyperfine couplings of the defect atoms have a linear dependence on the mixing percentage. We calculate the inverse dielectric constant to predict an \textit{ab-initio} mixing percentage. The final hyperfine coupling predictions are close to the experimental values available in the literature. Our results will help to guide future novel experiments on these defects.

cond-mat.mes-hall↗

Real-time feedback protocols for optimizing fault-tolerant two-qubit gate fidelities in a silicon spin system

Recently, several groups have demonstrated two-qubit gate fidelities in semiconductor spin qubit systems above 99%. Achieving this regime of fault-tolerant compatible high fidelities is nontrivial and requires exquisite stability and precise control over the different qubit parameters over an extended period of time. This can be done by efficiently calibrating qubit control parameters against different sources of micro- and macroscopic noise. Here, we present several single- and two-qubit parameter feedback protocols, optimised for and implemented in state-of-the-art fast FPGA hardware. Furthermore, we use wavelet-based analysis on the collected feedback data to gain insight into the different sources of noise in the system. Scalable feedback is an outstanding challenge and the presented implementation and analysis gives insight into the benefits and drawbacks of qubit parameter feedback, as feedback related overhead increases. This work demonstrates a pathway towards robust qubit parameter feedback and systematic noise analysis, crucial for mitigation strategies towards systematic high-fidelity qubit operation compatible with quantum error correction protocols.

quant-ph↗

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electrostatic crosstalk to the spin g-factors, creating a dependence of the Larmor frequency on the electric field created by gate electrodes positioned even tens of nanometers apart. By studying the Stark shift from tens of spin qubits measured in nine different CMOS devices, we developed a theoretical frawework that explains how electric fields couple to the spin of the electrons in increasingly complex arrays, including those electric fluctuations that limit qubit dephasing times $T_2^*$. The results will aid in the design of robust strategies to scale CMOS quantum technology.

cond-mat.mes-hall↗

High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin

The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 kelvin, where the cooling power is orders of magnitude higher. Here, we tune up and operate spin qubits in silicon above 1 kelvin, with fidelities in the range required for fault-tolerant operation at such temperatures. We design an algorithmic initialisation protocol to prepare a pure two-qubit state even when the thermal energy is substantially above the qubit energies, and incorporate radio-frequency readout to achieve fidelities up to 99.34 per cent for both readout and initialisation. Importantly, we demonstrate a single-qubit Clifford gate fidelity of 99.85 per cent, and a two-qubit gate fidelity of 98.92 per cent. These advances overcome the fundamental limitation that the thermal energy must be well below the qubit energies for high-fidelity operation to be possible, surmounting a major obstacle in the pathway to scalable and fault-tolerant quantum computation.

quant-ph↗

Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations

High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS 4-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique, and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin flip errors, favouring the use of the technique at short integration times. This method not only allows for faster and higher fidelity qubit measurements, but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits.

cond-mat.mes-hall↗

Quantum Key Distribution Using a Quantum Emitter in Hexagonal Boron Nitride

Quantum Key Distribution (QKD) is considered the most immediate application to be widely implemented amongst a variety of potential quantum technologies. QKD enables sharing secret keys between distant users, using photons as information carriers. An ongoing endeavour is to implement these protocols in practice in a robust, and compact manner so as to be efficiently deployable in a range of real-world scenarios. Single Photon Sources (SPS) in solid-state materials are prime candidates in this respect. Here, we demonstrate a room temperature, discrete-variable quantum key distribution system using a bright single photon source in hexagonal-boron nitride, operating in free-space. Employing an easily interchangeable photon source system, we have generated keys with one million bits length, and demonstrated a secret key of approximately 70,000 bits, at a quantum bit error rate of 6%, with $\varepsilon$-security of $10^{-10}$. Our work demonstrates the first proof of concept finite-key BB84 QKD system realised with hBN defects.

quant-ph↗

Control of dephasing in spin qubits during coherent transport in silicon

One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising strategies to achieve this architectural advantage. Experimental results have previously demonstrated high fidelity transportation of spin qubits between two quantum dots in silicon and identified possible sources of error. In this theoretical study, we investigate these errors and analyze the impact of tunnel coupling, magnetic field and spin-orbit effects on the spin transfer process. The interplay between these effects gives rise to double dot configurations that include regimes of enhanced decoherence that should be avoided for quantum information processing. These conclusions permit us to extrapolate previous experimental conclusions and rationalize the future design of large scale quantum processors.

cond-mat.mes-hall↗

Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide

Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these come with much stronger energy scales for spin-orbit and hyperfine coupling, but how this affects their spin coherence is little explored. Vanadium in silicon carbide is such a system, with technological interest for its optical emission at a telecom wavelength and compatibility with semiconductor industry. Here we show coherent spin dynamics of an ensemble of vanadium defects around a clock-transition, studied while isolated from, or coupled to neighbouring nuclear spins. We find spin dephasing times up to 7.2 $μ$s, and via spin-echo studies coherence lifetimes that go well beyond tens of microseconds. We demonstrate operation points where strong coupling to neighbouring nuclear spins does not compromise the coherence of the central vanadium spin, which identifies how these can be applied as a coherent spin register. Our findings are relevant for understanding a wide class of defects with similar energy scales and crystal symmetries, that are currently explored in diamond, silicon carbide, and hexagonal boron nitride.

quant-ph↗

High Fidelity Control of a Nitrogen-Vacancy Spin Qubit at Room Temperature using the SMART Protocol

A practical implementation of a quantum computer requires robust qubits that are protected against their noisy environment. Dynamical decoupling techniques have been successfully used in the past to offer protected high-fidelity gate operations in negatively-charged Nitrogen-Vacancy (NV-) centers in diamond, albeit under specific conditions with the intrinsic nitrogen nuclear spin initialised. In this work, we show how the SMART protocol, an extension of the dressed-qubit concept, can be implemented for continuous protection to offer Clifford gate fidelities compatible with fault-tolerant schemes, whilst prolonging the coherence time of a single NV- qubit at room temperature. We show an improvement in the average Clifford gate fidelity from $0.940\pm0.005$ for the bare qubit to $0.993\pm0.002$ for the SMART qubit, with the nitrogen nuclear spin in a random orientation. We further show a $\gtrsim$ 30 times improvement in the qubit coherence times compared to the bare qubit.

quant-ph↗

Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry

The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transported across the chip via shuttling, or coupled via mediating quantum systems over short-to-intermediate distances. This paper investigates the charge and spin characteristics of an elongated quantum dot -- a so-called jellybean quantum dot -- for the prospects of acting as a qubit-qubit coupler. Charge transport, charge sensing and magneto-spectroscopy measurements are performed on a SiMOS quantum dot device at mK temperature, and compared to Hartree-Fock multi-electron simulations. At low electron occupancies where disorder effects and strong electron-electron interaction dominate over the electrostatic confinement potential, the data reveals the formation of three coupled dots, akin to a tunable, artificial molecule. One dot is formed centrally under the gate and two are formed at the edges. At high electron occupancies, these dots merge into one large dot with well-defined spin states, verifying that jellybean dots have the potential to be used as qubit couplers in future quantum computing architectures.

cond-mat.mes-hall↗

Indirect Control of the $\rm {}^{29}SiV^{-}$ Nuclear Spin in Diamond

Coherent control and optical readout of the electron spin of the $^{29}$SiV$^{-}$ center in diamond has been demonstrated in literature, with exciting prospects for implementations as memory nodes and spin qubits. Nuclear spins may be even better suited for many applications in quantum information processing due to their long coherence times. Control of the $^{29}$SiV$^{-}$ nuclear spin using conventional NMR techniques is feasible, albeit at slow kilohertz rates due to the nuclear spin's low gyromagnetic ratio. In this work we theoretically demonstrate how indirect control using the electron spin-orbit effect can be employed for high-speed, megahertz control of the $^{29}$Si nuclear spin. We discuss the impact of the nuclear spin precession frequency on gate times and the exciting possibility of all optical nuclear spin control.

quant-ph↗

On-demand electrical control of spin qubits

Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors.

cond-mat.mes-hall↗

Observing hyperfine interactions of NV centers in diamond in an advanced quantum teaching lab

The negatively charged nitrogen-vacancy (NV$^-$) center in diamond is a model quantum system for university teaching labs due to its room-temperature compatibility and cost-effective operation. Based on the low-cost experimental setup that we have developed and described for the coherent control of the electronic spin (Sewani et al.), we introduce and explain here a number of more advanced experiments that probe the electron-nuclear interaction between the \nv electronic and the \NN~and \CC~nuclear spins. Optically-detected magnetic resonance (ODMR), Rabi oscillations, Ramsey fringe experiments, and Hahn echo sequences are implemented to demonstrate how the nuclear spins interact with the electron spins. Most experiments only require 15 minutes of measurement time and can, therefore, be completed within one teaching lab.

physics.ed-ph↗