arXiv subjects

Aron Walsh

Publications and source records attributed to Aron Walsh.

At least 55 records · Page 3Linked to original sources

arXiv2023

Dynamic Local Structure in Caesium Lead Iodide: Spatial Correlation and Transient Domains

Metal halide perovskites are multifunctional semiconductors with tunable structures and properties. They are highly dynamic crystals with complex octahedral tilting patterns and strongly anharmonic atomic behaviour. In the higher temperature, higher symmetry phases of these materials, several complex structural features have been observed. The local structure can differ greatly from the average structure and there is evidence that dynamic two-dimensional structures of correlated octahedral motion form. An understanding of the underlying complex atomistic dynamics is, however, still lacking. In this work, the local structure of the inorganic perovskite CsPbI$_3$ is investigated using a new machine learning force field based on the atomic cluster expansion framework. Through analysis of the temporal and spatial correlation observed during large-scale simulations, we reveal that the low frequency motion of octahedral tilts implies a double-well effective potential landscape, even well into the cubic phase. Moreover, dynamic local regions of lower symmetry are present within both higher symmetry phases. These regions are planar and we report the length and timescales of the motion. Finally, we investigate and visualise the spatial arrangement of these features and their interactions, providing a comprehensive picture of local structure in the higher symmetry phases.

cond-mat.mtrl-sci↗

arXiv2023

Accessible Chemical Space for Metal Nitride Perovskites

Building on the extensive exploration of metal oxide and metal halide perovskites, metal nitride perovskites represent a largely unexplored class of materials. We report a multi-tier computational screening of this chemical space. From a pool of 3660 ABN$_3$ compositions covering I-VIII, II-VII, III-VI and IV-V oxidation state combinations, 279 are predicted to be chemically feasible. The ground-state structures of the 25 most promising candidate compositions were explored through enumeration over octahedral tilt systems and global optimisation. We predict 12 dynamically and thermodynamically stable nitride perovskite materials, including YMoN$_3$, YWN$_3$, ZrTaN$_3$, and LaMoN$_3$. These feature significant electric polarisation and low predicted switching electric field, showing similarities with metal oxide perovskites and making them attractive for ferroelectric memory devices

cond-mat.mtrl-sci↗

arXiv2023

Four-electron Negative-U Vacancy Defects in Antimony Selenide

The phenomenon of negative-U behavior, where a defect traps a second charge carrier more strongly than the first, has been established in many host crystals. Here we report the case of four-carrier transitions for both vacancy defects in Sb2Se3. A global structure searching strategy is employed to explore the defect energy landscape from first-principles, revealing previously-unrealized configurations which facilitate a major charge redistribution. Thermodynamic analysis of the accessible charge states reveals a four-electron negative-U transition (delta q = 4) for both V_Se and V_Sb and, by consequence, amphoteric behavior for all intrinsic defects in Sb2Se3, with impact on its usage in solar cells. To the best of our knowledge, four-electron negative-U behavior has not been previously explored in this or other compounds. The unusual behavior is facilitated by valence alternation, a reconfiguration of the local bonding environments, characteristic of both Se and Sb.

cond-mat.mtrl-sci↗

arXiv2022

Inhomogeneous Defect Distribution in Mixed-Polytype Metal Halide Perovskites

The competition between corner, edge and face-sharing octahedral networks is a cause of phase inhomogeneity in metal halide perovskite thin-films. Here we probe the charged iodine vacancy distribution and transport at the junction between cubic and hexagonal polytypes of CsPbI$_3$ from first-principles materials modelling. We predict a lower defect formation energy in the face-sharing regions, which correlates with a longer Pb$-$I bond length and causes a million-fold increase in local defect concentration. These defects are predicted to be more mobile in the face-sharing regions with a reduced activation energy for vacancy-mediated diffusion. We conclude that hexagonal phase inclusions or interfaces will act as defect sinks that could trap charges and enhance current-voltage hysteresis in perovskite-based solar cells and electrical devices.

cond-mat.mtrl-sci↗

arXiv2022

Band gap opening from displacive instabilities in layered covalent-organic frameworks $^†$

Covalent organic frameworks (COFs) offer a high degree of chemical and structural flexibility. There is a large family of COFs built from 2D sheets that are stacked to form extended crystals. While it has been common to represent the stacking as eclipsed with one repeating layer ("AA"), there is growing evidence that a more diverse range of stacking sequences is accessible. Herein, we report a computational study of layer stacking in two prototypical COFs, Tp-Azo and DAAQ-TFP, which have shown high performance as Li-ion battery electrodes. We find a striking preference for slipped structures with horizontal offsets between layers ranging from 1.7 Å to 3.5 Å in a potential energy minimum that forms a low energy ring. The associated symmetry breaking results in a pronounced change in the underlying electronic structure. A band gap opening of 0.8 - 1.4 eV is found due to modifications of the underlying valence and conduction band dispersion as explained from changes in the $π$ orbital overlap. The implications for the screening and selection of COF for energy applications are discussed.

cond-mat.mtrl-sci↗

arXiv2022

Band Versus Polaron: Charge Transport in Antimony Chalcogenides

Antimony sulfide (Sb2S3) and selenide (Sb2Se3) are emerging earth-abundant absorbers for photovoltaic applications. Solar cell performance depends strongly on charge carrier transport properties but these remain poorly understood in Sb2X3. Here we report band-like transport in Sb2X3 by investigating the electron-lattice interaction and theoretical limits of carrier mobility using first-principles density functional theory and Boltzmann transport calculations. We demonstrate that transport in Sb2X3 is governed by large polarons with moderate Fröhlich coupling constants (~ 2), large polaron radii (extending over several unit cells) and high carrier mobility (an isotropic average of > 10 for both electrons and holes). The room temperature mobility is intrinsically limited by scattering from polar phonon modes and is further reduced in highly defective samples. Our study confirms that the performance of the Sb2X3 solar cells is not limited by intrinsic self-trapping.

cond-mat.mtrl-sci↗

arXiv2022

Identifying the ground state structures of point defects in solids

Point defects are a universal feature of crystalline materials. Their identification is often addressed by combining experimental measurements with theoretical models. The standard approach of simulating defects is, however, prone to missing the ground state atomic configurations associated with energy-lowering reconstructions from the idealised crystallographic environment. Missed ground states compromise the accuracy of calculated properties. To address this issue, we report an approach to efficiently navigate the defect configurational landscape using targeted bond distortions and rattling. Application of our workflow to a range of materials ($\rm CdTe$, $\rm GaAs$, $\rm Sb_2S_3$, $\rm Sb_2Se_3$, $\rm CeO_2$, $\rm In_2O_3$, $\rm ZnO$, anatase-$\rm TiO_2$) reveals symmetry breaking in each host crystal that is not found via conventional local minimisation techniques. The point defect distortions are classified by the associated physico-chemical factors. We demonstrate the impact of these defect distortions on derived properties, including formation energies, concentrations and charge transition levels. Our work presents a step forward for quantitative modelling of imperfect solids.

cond-mat.mtrl-sci↗

arXiv2022

What Information is Necessary and Sufficient to Predict Materials Properties using Machine Learning?

Conventional wisdom of materials modelling stipulates that both chemical composition and crystal structure are integral in the prediction of physical properties. However, recent developments challenge this by reporting accurate property-prediction machine learning (ML) frameworks using composition alone without knowledge of the local atomic environments or long-range order. To probe this behavior, we conduct a systematic comparison of supervised ML models built on composition only vs. composition plus structure features. Similar performance for property prediction is found using both models for compounds close to the thermodynamic convex hull. We hypothesize that composition embeds structural information of ground-state structures in support of composition-centric models for property prediction and inverse design of stable compounds.

cond-mat.mtrl-sci↗

arXiv2022

Switchable Electric Dipole from Polaron Localization in Dielectric Crystals

Ferroelectricity in crystals is associated with the displacement of ions or rotations of polar units. Here we consider the dipole created by donor doping ($D^+$) and the corresponding bound polaron ($e^-$).A dipole of 6.15 Debye is predicted, from Berry phase analysis, in the Ruddlesden-Popper phase of ${\rm Sr_3Ti_2O_7}$. A characteristic double-well potential is formed, which persists for high doping densities. The effective Hubbard $U$ interaction can vary the defect state from metallic, a two-dimensional polaron, through to a zero-dimensional polaron. The ferroelectric-like behavior reported here is localized and distinct from conventional spontaneous lattice polarization.

cond-mat.mtrl-sci↗

arXiv2022

Impact of metastable defect structures on carrier recombination in solar cells

The efficiency of a solar cell is often limited by electron-hole recombination mediated by defect states within the band gap of the photovoltaic (PV) semiconductor. The Shockley-Read-Hall (SRH) model considers a static trap that can successively capture electrons and holes. In reality however, true trap levels vary with both the defect charge state and local structure. Here we consider the role of metastable structural configurations in capturing electrons and holes, taking the tellurium interstitial in CdTe as an illustrative example. Consideration of the defect dynamics, and symmetry-breaking, changes the qualitative behaviour and activates new pathways for carrier capture. Our results reveal the potential importance of metastable defect structures in non-radiative recombination, in particular for semiconductors with anharmonic/ionic-covalent bonding, multinary compositions, low crystal symmetries or highly-mobile defects.

cond-mat.mtrl-sci↗

arXiv2022

Effective Lifetime of Non-Equilibrium Carriers in Semiconductors from Non-Adiabatic Molecular Dynamics Simulations

The lifetime of non-equilibrium electrons and holes in semiconductors is crucial for solar cell and optoelectronic applications. Non-adiabatic molecular dynamics (NAMD) simulations based on time-dependent density functional theory (TDDFT) are widely used to study excited-state carrier dynamics. However, the calculated carrier lifetimes are often different from experimental results by orders of magnitude. In this work, by revisiting the definition of carrier lifetime and considering different recombination mechanisms, we report a systematic procedure for calculating the effective carrier lifetime in realistic semiconductor crystals that can be compared directly to experimental measurements. The procedure shows that considering all recombination mechanisms and using reasonable densities of carriers and defects are crucial in calculating the effective lifetime. When NAMD simulations consider only Shockey-Read-Hall (SRH) defect-assisted and band-to-band non-radiative recombination while neglect band-to-band radiative recombination, and the densities of non-equilibrium carriers and defects in supercell simulations are much higher than those in realistic semiconductors under solar illumination, the calculated lifetimes are ineffective and thus differ from experiments. Using our procedure, the calculated effective lifetime of the halide perovskite CH3NH3PbI3 agrees with experiments. It is mainly determined by band-to-band radiative and defect-assisted non-radiative recombination, while band-to-band non-radiative recombination is negligible. These results indicate that it is possible to calculate carrier lifetimes accurately based on NAMD simulations, but the directly calculated values should be converted to effective lifetimes for comparison to experiments. The revised procedure can be widely applied in future carrier lifetime simulations.

cond-mat.mtrl-sci↗

arXiv2022

Electronic Defects in Metal Oxide Photocatalysts

A deep understanding of defects is essential for the optimisation of materials for solar energy conversion. This is particularly true for metal oxide photo(electro)catalysts, which typically feature high concentrations of charged point defects that are electronically active. In photovoltaic materials, except for selected dopants, defects are considered detrimental and should be eliminated to minimise charge recombination. However, photocatalysis is a more complex process where defects can play an active role, for example, by stabilising charge separation and mediating rate-limiting catalytic steps. Here, we review the behaviour of electronic defects in metal oxides, paying special attention to the principles underpinning the formation and function of trapped charges in the form of polarons. We focus on how defects alter the electronic structure, statically or transiently upon illumination, and discuss the implications of such changes in light-driven catalytic reactions. Finally, we consider the applicability of lessons learned from oxide defect chemistry to new photocatalysts based on carbon nitrides, polymers and metal halide perovskites.

cond-mat.mtrl-sci↗

arXiv2021

Lone pair driven anisotropy in antimony chalcogenide semiconductors

Antimony sulfide (Sb2S3) and selenide (Sb2Se3) have emerged as promising earth-abundant alternatives among thin-film photovoltaic compounds. A distinguishing feature of these materials is their anisotropic crystal structures, which are composed of quasi-one-dimensional (1D) [Sb4X6]n ribbons. The interaction between ribbons has been reported to be van der Waals (vdW) in nature and Sb2X3 are thus commonly classified in the literature as 1D semiconductors. However, based on first-principles calculations, here we show that inter-ribbon interactions are present in Sb2X3 beyond the vdW regime. The origin of the anisotropic structures is related to the stereochemical activity of the Sb 5s lone pair according to electronic structure analysis. The impacts of structural anisotropy on the electronic and optical properties are further examined, including the presence of higher dimensional Fermi surfaces for charge carrier transport. Our study provides guidelines for optimising the performance of Sb2X3-based solar cells via device structuring based on the underlying crystal anisotropy.

cond-mat.mtrl-sci↗

arXiv2021

Giant Huang-Rhys Factor for Electron Capture by the Iodine Interstitial in Perovskite Solar Cells

Improvement in the optoelectronic performance of halide perovskite semiconductors requires the identification and suppression of non-radiative carrier trapping processes. The iodine interstitial has been established as a deep level defect, and implicated as an active recombination centre. We analyse the quantum mechanics of carrier trapping. Fast and irreversible electron capture by the neutral iodine interstitial is found. The effective Huang-Rhys factor exceeds 300, indicative of the strong electron-phonon coupling that is possible in soft semiconductors. The accepting phonon mode has a frequency of 53 cm$^{-1}$ and has an associated electron capture coefficient of 10$^{-10}$cm$^3$s$^{-1}$. The inverse participation ratio is used to quantify the localisation of phonon modes associated with the transition. We infer that suppression of octahedral rotations is an important factor to enhance defect tolerance.

cond-mat.mtrl-sci↗

arXiv2021

Ab initio calculation of the detailed balance limit to the photovoltaic efficiency of single p-n junction kesterite solar cells

The thermodynamic limit of photovoltaic efficiency for a single-junction solar cell can be readily predicted using the bandgap of the active light absorbing material. Such an approach overlooks the energy loss due to non-radiative electron-hole processes. We propose a practical ab initio procedure to determine the maximum efficiency of a thin-film solar cell that takes into account both radiative and non-radiative recombination. The required input includes the frequency-dependent optical absorption coefficient, as well as the capture cross-sections and equilibrium populations of point defects. For kesterite-structured Cu$_2$ZnSnS$_4$, the radiative limit is reached for a film thickness of around 2.6 micrometer, where the efficiency gain due to light absorption is counterbalanced by losses due to the increase in recombination current.

physics.app-ph↗

arXiv2021

Bismuth-doping Alters Structural Phase Transitions in Methylammonium Lead Tribromide Single Crystals

We study the effects of bismuth doping on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp) we find that, as Bi doping increases, the phase transition assigned to the cubic to tetragonal phase boundary decreases in temperature. Furthermore, after doping we observe one phase transition between 135 and 155 K, in contrast to two transitions observed in the undoped single crystal. These results appear strikingly similar to previously reported effects of mechanical pressure on perovskite crystal structure. Using X-ray diffraction, we show that the lattice constant decreases as Bi is incorporated into the crystal, as predicted by density functional theory (DFT). We propose that bismuth substitutional doping on the lead site is dominant, resulting in BiPb+ centers which induce compressive chemical strain that alters the crystalline phase transitions.

cond-mat.mtrl-sci↗

arXiv2021

Rapid Recombination by Cadmium Vacancies in CdTe

CdTe is a key thin-film photovoltaic technology. Non-radiative electron-hole recombination reduces the solar conversion efficiency from an ideal value of 32% to a current champion performance of 22%. The cadmium vacancy (V_Cd) is a prominent acceptor species in p-type CdTe; however, debate continues regarding its structural and electronic behavior. Using ab initio defect techniques, we calculate a negative-U double-acceptor level for V_Cd, while reproducing the V_Cd^-1 hole-polaron, reconciling theoretical predictions with experimental observations. We find the cadmium vacancy facilitates rapid charge-carrier recombination, reducing maximum power-conversion efficiency by over 5% for untreated CdTe -- a consequence of tellurium dimerization, metastable structural arrangements, and anharmonic potential energy surfaces for carrier capture.

cond-mat.mtrl-sci↗

arXiv2020

Probing the ionic defect landscape in halide perovskite solar cells

Point defects in metal halide perovskites play a critical role in determining their properties and optoelectronic performance; however, many open questions remain unanswered. In this work, we apply impedance spectroscopy and deep-level transient spectroscopy to characterize the ionic defect landscape in methylammonium lead triiodide ($MAPbI_3$) perovskites in which defects were purposely introduced by fractionally changing the precursor stoichiometry. Our results highlight the profound influence of defects on the electronic landscape, exemplified by their impact on the device built-in potential, and consequently, the open-circuit voltage. Even low ion densities can have an impact on the electronic landscape when both cations and anions are considered as mobile. Moreover, we find that all measured ionic defects fulfil the Meyer--Neldel rule with a characteristic energy connected to the underlying ion hopping process. These findings support a general categorization of defects in halide perovskite compounds.

physics.app-ph↗