arXiv subjects

Aron Walsh

Publications and source records attributed to Aron Walsh.

At least 73 records · Page 4Linked to original sources

arXiv2020

Solvent Engineered Synthesis of Layered SnO Nanoparticles for High-Performance Anodes

Batteries are the most abundant form of electrochemical energy storage. Lithium and sodium ion batteries account for a significant portion of the battery market, but high-performance electrochemically active materials still need to be discovered and optimized for these technologies. Recently, tin(II) oxide (SnO) has emerged as a highly-promising battery electrode. In this work, we present a facile synthesis method to produce SnO nanoparticles whose size and shape can be tailored by changing the solvent nature. We study the complex relationship between wet chemistry synthesis conditions and resulting layered nanoparticle morphology. Furthermore, high-level electronic structure theory, including dispersion corrections to account for van der Waals forces, are employed to enhance our understanding of the underlying chemical mechanisms. The electronic vacuum alignment and surface energies are determined, allowing the prediction of the thermodynamically-favoured crystal shape (Wulff construction) and surface-weighted work function. Finally, the synthesized nanomaterials were tested as Li-ion battery anodes, demonstrating significantly enhanced electrochemical performance for morphologies obtained from specific synthesis conditions.

cond-mat.mtrl-sci↗

arXiv2020

Perovskite-Inspired Materials for Photovoltaics -- From Design to Devices

Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready solubility in water are concerns for widespread implementation. These challenges, alongside the many successes of the perovskites, have motivated significant efforts across multiple disciplines to find lead-free and stable alternatives which could mimic the ability of the perovskites to achieve high performance with low temperature, facile fabrication methods. This Review discusses the computational and experimental approaches that have been taken to discover lead-free perovskite-inspired materials, and the recent successes and challenges in synthesizing these compounds. The atomistic origins of the extraordinary performance exhibited by lead-halide perovskites in photovoltaic devices is discussed, alongside the key challenges in engineering such high-performance in alternative, next-generation materials. Beyond photovoltaics, this Review discusses the impact perovskite-inspired materials have had in spurring efforts to apply new materials in other optoelectronic applications, namely light-emitting diodes, photocatalysts, radiation detectors, thin film transistors and memristors. Finally, the prospects and key challenges faced by the field in advancing the development of perovskite-inspired materials towards realization in commercial devices is discussed.

physics.app-ph↗

arXiv2020

Lattice compression increases the activation barrier for phase segregation in mixed-halide perovskites

The bandgap tunability of mixed-halide perovskites makes them promising candidates for light emitting diodes and tandem solar cells. However, illuminating mixed-halide perovskites results in the formation of segregated phases enriched in a single-halide. This segregation occurs through ion migration, which is also observed in single-halide compositions, and whose control is thus essential to enhance the lifetime and stability. Using pressure-dependent transient absorption spectroscopy, we find that the formation rates of both iodide- and bromide-rich phases in MAPb(BrxI1-x)3 reduce by two orders of magnitude on increasing the pressure to 0.3 GPa. We explain this reduction from a compression-induced increase of the activation energy for halide migration, which is supported by first-principle calculations. A similar mechanism occurs when the unit cell volume is reduced by incorporating a smaller cation. These findings reveal that stability with respect to halide segregation can be achieved either physically through compressive stress or chemically through compositional engineering.

physics.app-ph↗

arXiv2020

Thermodynamic stabilization of mixed-halide perovskites against phase segregation

Mixing iodide and bromide in halide perovskite semiconductors is an effective strategy to tune their bandgap, therefore mixed-halide perovskites hold great promise for color-tunable LEDs and tandem solar cells. However, the bandgap of mixed-halide perovskites is unstable under (sun-)light, since the halides segregate into domains of different bandgaps. Using pressure-dependent ultrafast transient absorption spectroscopy, we show that high external pressure increases the range of thermodynamically stable halide mixing ratios. Chemical pressure, by inserting a smaller cation, has the same effect, which means that any iodide-to-bromide ratio can be thermodynamically stabilized by tuning the crystal volume and compressibility. We interpret this stabilization by an alteration of the Helmholtz free energy via the largely overlooked PdeltaV term.

physics.chem-ph↗

arXiv2020

Assessing the defect tolerance of kesterite-inspired solar absorbers

Various thin-film I$_2$-II-IV-VI$_4$ photovoltaic absorbers derived from kesterite Cu$_2$ZnSn(S,Se)$_4$ have been synthesized, characterized, and theoretically investigated in the past few years. The availability of this homogeneous materials dataset is an opportunity to examine trends in their defect properties and identify criteria to find new defect-tolerant materials in this vast chemical space. We find that substitutions on the Zn site lead to a smooth decrease in band tailing as the ionic radius of the substituting cation increases. Unfortunately, this substitution strategy does not ensure the suppression of deeper defects and non-radiative recombination. Trends across the full dataset suggest that Gaussian and Urbach band tails in kesterite-inspired semiconductors are two separate phenomena caused by two different antisite defect types. Deep Urbach tails are correlated with the calculated band gap narrowing caused by the (2I$_\mathrm{II}$+IV$_\mathrm{II}$) defect cluster. Shallow Gaussian tails are correlated with the energy difference between the kesterite and stannite polymorphs, which points to the role of (I$_\mathrm{II}$+II$_\mathrm{I}$) defect clusters involving Group IB and Group IIB atoms swapping across \textit{different} cation planes. This finding can explain why \textit{in-plane} cation disorder and band tailing are uncorrelated in kesterites. Our results provide quantitative criteria for discovering new kesterite-inspired photovoltaic materials with low band tailing.

physics.app-ph↗

arXiv2020

Bandgap Lowering in Mixed Alloys of Cs2Ag(SbxBi1-x)Br6 Double Perovskite Thin Films

Halide double perovskites have gained significant attention, owing to their composition of low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double perovskites, including Cs2AgBiBr6, have wide bandgaps, which limit photo conversion efficiencies. The bandgap can be reduced through hallowing with Sb3+, but Sb-rich alloys are difficult to synthesise due to the high formation energy of Cs2AgSbBr6, which itself has a wide bandgap. We develop a solution-based route to synthesis phase-pure Cs2Ag(SbxBi1-x)Br6 thin films, with the mixing parameter x continuous varying over the entire composition range. We reveal that the mixed alloys (x between 0.5 and 0.9) demonstrate smaller bandgaps (as low as 2.08 eV) than the pure Sb- (2.18 eV) and Bi-based (2.25 eV) compounds, with strong deviation from Vegard's law. Through in-depth computations, we propose that bandgap lowering arises from the Type II band alignment between Cs2AgBiBr6 and Cs2AgSbBr6. The energy mismatch between the Bi and Sb s and p atomic orbitals, coupled with their non-linear mixing, results in the alloys adopting a smaller bandgap than the pure compounds. Our work demonstrates an approach to achieve bandgap reduction and highlights that bandgap bowing may be found in other double perovskite alloys by pairing together materials forming a Type II band alignment.

cond-mat.mtrl-sci↗

arXiv2020

Quick-start guide for first-principles modelling of point defects in crystalline materials

Defects influence the properties and functionality of all crystalline materials. For instance, point defects participate in electronic (e.g. carrier generation and recombination) and optical (e.g. absorption and emission) processes critical to solar energy conversion. Solid-state diffusion, mediated by the transport of charged defects, is used for electrochemical energy storage. First-principles calculations of defects based on density functional theory have been widely used to complement, and even validate, experimental observations. In this `quick-start guide', we discuss the best practice in how to calculate the formation energy of point defects in crystalline materials and analysis techniques appropriate to probe changes in structure and properties relevant across energy technologies.

cond-mat.mtrl-sci↗

arXiv2020

Modelling the dielectric constants of crystals using machine learning

The relative permittivity of a crystal is a fundamental property that links microscopic chemical bonding to macroscopic electromagnetic response. Multiple models, including analytical, numerical and statistical descriptions, have been made to understand and predict dielectric behaviour. Analytical models are often limited to a particular type of compounds, whereas machine learning (ML) models often lack interpretability. Here, we combine supervised ML, density functional perturbation theory, and analysis based on game theory to predict and explain the physical trends in optical dielectric constants of crystals. Two ML models, support vector regression and deep neural networks, were trained on a dataset of 1,364 dielectric constants. Shapley additive explanations (SHAP) analysis of the ML models reveals that they recover correlations described by textbook Clausius-Mossotti and Penn models, which gives confidence in their ability to describe physical behavior, while providing superior predictive power.

cond-mat.mtrl-sci↗

arXiv2020

Modelling Grain Boundaries in Polycrystalline Halide Perovskite Solar Cells

Solar cells are semiconductor devices that generate electricity through charge generation upon illumination. For optimal device efficiency, the photo-generated carriers must reach the electrical contact layers before they recombine. A deep understanding of the recombination process and transport behavior is essential to design better devices. Halide perovskite solar cells are commonly made of a polycrystalline absorber layer, but there is no consensus on the nature and role of grain boundaries. This review paper concerns theoretical approaches for the investigation of extended defects. We introduce recent computational studies on grain boundaries, and their influence on point defect distributions, in halide perovskite solar cells. We conclude the paper with discussion of future research directions.

cond-mat.mtrl-sci↗

arXiv2020

Comment on "Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination"

Halide perovskites exhibit slow rates of non-radiative electron-hole recombination upon illumination. Chu et al. [Sci. Adv. 6 7, eaaw7453 (2020)] use the results of first-principles simulations to argue that this arises from the nature of the crystal vibrations and leads to a breakdown of Shockley-Read-Hall theory. We highlight flaws in their methodology and analysis of carrier capture by point defects in crystalline semiconductors.

cond-mat.mtrl-sci↗

arXiv2020

Upper limit to the photovoltaic efficiency of imperfect crystals

The Shockley-Queisser (SQ) limit provides a convenient metric for predicting light-to-electricity conversion efficiency of a solar cell based on the band gap of the light-absorbing layer. In reality, few materials approach this radiative limit. We develop a formalism and a computational method to predict the maximum photovoltaic efficiency of imperfect crystals from first principles. Our scheme includes equilibrium populations of native defects, their carrier-capture coefficients, and the associated recombination rates. When applied to kesterite solar cells, we reveal an intrinsic limit of 20% for $\mathrm{Cu_2ZnSnSe_4}$, which falls far below the SQ limit of 32%. The effects of atomic substitution and extrinsic doping are studied, leading to pathways for enhanced efficiency of 31%. This approach can be applied to support targeted-materials selection for future solar-energy technologies.

physics.comp-ph↗

arXiv2019

Donor and Acceptor Characteristics of Native Point Defects in GaN

The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals...

cond-mat.mtrl-sci↗

arXiv2019

Anharmonic Lattice Relaxation during Non-radiative Carrier Capture

Lattice vibrations of point defects are essential for understanding non-radiative electron and hole capture in semiconductors as they govern properties including persistent photoconductivity and Shockley-Read-Hall recombination rate. Although the harmonic approximation is sufficient to describe a defect with small lattice relaxation, for cases of large lattice relaxation it is likely to break down. We describe a first-principles procedure to account for anharmonic carrier capture and apply it to the important case of the \textit{DX} center in GaAs. This is a system where the harmonic approximation grossly fails. Our treatment of the anharmonic Morse-like potentials accurately describes the observed electron capture barrier, predicting the absence of quantum tunnelling at low temperature, and a high hole capture rate that is independent of temperature. The model also explains the origin of the composition-invariant electron emission barrier. These results highlight an important shortcoming of the standard approach for describing point defect ionization that is accompanied by large lattice relaxation, where charge transfer occurs far from the equilibrium configuration.

cond-mat.mtrl-sci↗

arXiv2019

Impact of non-parabolic electronic band structure on the optical and transport properties of photovoltaic materials

For semiconductors used in photovoltaic devices, the effective mass approximation allows calculation of important material properties from first-principles calculations, including optical properties (e.g. exciton binding energies), defect properties (e.g. donor and acceptor levels) and transport properties (e.g. carrier mobilities). The conduction and valence bands of semiconductors are commonly approximated as parabolic around their extrema, which gives a simple theoretical description, but ignores the complexity of real materials. In this work, we use density functional theory to assess the impact of band non-parabolicity on four common thin-film photovoltaic materials - GaAs, CdTe, Cu$_2$ZnSnS$_4$ and CH$_3$NH$_3$PbI$_3$ - at temperatures and carrier densities relevant for real-world applications. First, we calculate the effective mass at the band edges. We compare finite-difference, unweighted least-squares and thermally weighted least-squares approaches. We find that the thermally weighted least-squares method reduces sensitivity to the choice of sampling density. Second, we employ a Kane quasi-linear dispersion to quantify the extent of non-parabolicity, and compare results from different electronic structure theories to consider the effect of spin-orbit coupling and electron exchange. Finally, we focus on the halide perovskite CH$_3$NH$_3$PbI$_3$ as a model system to assess the impact of non-parabolicity on calculated electron transport and optical properties at high carrier concentrations. We find that at a concentration of 10$^{20}$ cm$^-3$ the optical effective mass increases by a factor of two relative to the low carrier-concentration value, and the polaron mobility decreases by a factor of three. Our work suggests that similar adjustments should be made to the predicted optical and transport properties of other semiconductors with significant band non-parabolicity.

cond-mat.mtrl-sci↗

arXiv2018

Perspective: Dielectric and Ferroic Properties of Halide Perovskite Solar Cells

Halide perovskite semiconductors respond to electric fields in a way that varies across time and length scales. We discuss the microscopic processes that give rise to the macroscopic polarization of these materials, ranging from the optical and vibrational response to the transport of ions and electrons. The strong frequency dependence of the dielectric permittivity can be understood by separating the static dielectric constant into its constituents, including the orientional polarization due to rotating dipoles, which connects theory with experimental observations. The controversial issue of ferroelectricity is addressed, where we highlight recent progress in materials and domain characterization, but emphasize the challenge associated with isolating spontaneous lattice polarization from other processes such as charged defect formation and transport. We conclude that CH$_3$NH$_3$PbI$_3$ exhibits many features characteristic of a ferroelastic electret, where a spontaneous lattice strain is coupled to long-lived metastable polarization states.

cond-mat.mtrl-sci↗

arXiv2018

Open-Circuit Voltage Deficit in Cu2ZnSnS4 Solar Cells by Interface Band Gap Narrowing

There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu2ZnSnS4/CdS interface is caused by a deeper conduction band that slows electron extraction. In contrast, the bandgap is not narrowed for the Cu2ZnSnSe4/CdS interface, consistent with a lower open-circuit voltage deficit.

cond-mat.mtrl-sci↗

arXiv2018

Finding a junction partner for candidate solar cell absorbers enargite and bournonite from electronic band and lattice matching

An essential step in the development of a new photovoltaic (PV) technology is choosing appropriate electron and hole extraction layers to make an efficient device. We recently proposed the minerals enargite (\enargite) and bournonite (\bournonite) as materials that are chemically stable with desirable optoelectronic properties for use as the absorber layer in a thin-film PV device. For these compounds, spontaneous lattice polarization with internal electric fields --- and potential ferroelectricity --- may allow for enhanced carrier separation and novel photophysical effects. In this work, we calculate the ionization potentials for non-polar surface terminations and propose suitable partners for forming solar cell heterojunctions by matching the electronic band edges to a set of candidate electrical contact materials. We then further screen these candidates by matching the lattice constants and identify those that are likely to minimise strain and achieve epitaxy. This two-step screening procedure identified a range of unconventional candidate contact materials including SnS2, ZnTe, WO3, and Bi2O3.

cond-mat.mtrl-sci↗

arXiv2018

Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells

The performance of kesterite thin-film solar cells is limited by a low open-circuit voltage due to defect-mediated electron-hole recombination. We calculate the non-radiative carrier-capture cross sections and Shockley-Read-Hall recombination coefficients of deep-level point defects in Cu$_2$ZnSnS$_4$ (CZTS) from first-principles. While the oxidation state of Sn is +4 in stoichiometric CZTS, inert lone pair (5$s^2$) formation lowers the oxidation state to +2. The stability of the lone pair suppresses the ionization of certain point defects, inducing charge transition levels deep in the band gap. We find large lattice distortions associated with the lone-pair defect centers due to the difference in ionic radii between Sn(II) and Sn(IV). The combination of a deep trap level and large lattice distortion facilitates efficient non-radiative carrier capture, with capture cross-sections exceeding $10^{-12}$ cm$^2$. The results highlight a connection between redox active cations and `killer' defect centres that form giant carrier traps. This lone pair effect will be relevant to other emerging photovoltaic materials containing n$s^2$ cations.

cond-mat.mtrl-sci↗