arXiv subjects

Arslan S. Raja

Publications and source records attributed to Arslan S. Raja.

18 recordsLinked to original sources

arXiv2024

Unifying frequency metrology across microwave, optical, and free-electron domains

Frequency metrology lies at the heart of precision measurement. Optical frequency combs provide a coherent link uniting the microwave and optical domains in the electromagnetic spectrum, with profound implications in timekeeping, sensing and spectroscopy, fundamental physics tests, exoplanet search, and light detection and ranging. Here, we extend this frequency link to free electrons by coherent modulation of the electron phase by a continuous-wave laser locked to a fully stabilized optical frequency comb. Microwave frequency standards are transferred to the optical domain via the frequency comb, and are further imprinted in the electron spectrum by optically modulating the electron phase with a photonic chip-based microresonator. As a proof-of-concept demonstration, we apply this frequency link in the calibration of an electron spectrometer, and use the electron spectrum to measure the optical frequency. Our work bridges frequency domains differed by a factor of $\sim10^{13}$ and carried by different physical objects, establishes a spectroscopic connection between electromagnetic waves and free-electron matter waves, and has direct ramifications in ultrahigh-precision electron spectroscopy.

physics.optics↗

arXiv2023

Free-electron interaction with nonlinear optical states in microresonators

The short de Broglie wavelength and strong interaction empower free electrons to probe scattering and excitations in materials and resolve the structure of biomolecules. Recent advances in using nanophotonic structures to mediate bilinear electron-photon interaction have brought novel optical manipulation schemes to electron beams, enabling high space-time-energy resolution electron microscopy, quantum-coherent optical modulation, attosecond metrology and pulse generation, transverse electron wavefront shaping, dielectric laser acceleration, and electron-photon pair generation. However, photonic nanostructures also exhibit nonlinearities, which have to date not been exploited for electron-photon interactions. Here, we report the interaction of electrons with spontaneously generated Kerr nonlinear optical states inside a continuous-wave driven photonic chip-based microresonator. Optical parametric processes give rise to spatiotemporal pattern formation, or dissipative structures, corresponding to coherent or incoherent optical frequency combs. By coupling such microcombs in situ to electron beams, we demonstrate that different dissipative structures induce distinct fingerprints in the electron spectra and Ramsey-type interference patterns. In particular, using spontaneously formed femtosecond temporal solitons, we achieve ultrafast temporal gating of the electron beam without the necessity of a pulsed laser source or a pulsed electron source. Our work elucidates the interaction of free electrons with a variety of nonlinear dissipative states, demonstrates the ability to access solitons inside an electron microscope, and extends the use of microcombs to unexplored territories, with ramifications in novel ultrafast electron microscopy, light-matter interactions driven by on-chip temporal solitons, and ultra-high spatiotemporal resolution sampling of nonlinear optical dynamics and devices.

physics.optics↗

arXiv2023

An Integrated Photon-Pair Source with Monolithic Piezoelectric Frequency Tunability

This work demonstrates the capabilities of an entangled photon-pair source at telecom wavelengths, based on a photonic integrated Si$_3$N$_4$ microresonator with monolithically integrated piezoelectric frequency tuning. Previously, frequency tuning of photon-pairs generated by microresonators has only been demonstrated using thermal control, however these have limited actuation bandwidth, and are not compatible with cryogenic environments. Here, the frequency-tunable photon-pair generation capabilities of a Si$_3$N$_4$ microresonator with a monolithically integrated aluminium nitride layer are shown. Fast-frequency locking of the microresonator to an external laser is demonstrated, with a resulting locking bandwidth orders of magnitude larger than reported previously using thermal locking. These abilities will have direct application in future schemes which interface such sources with quantum memories based on e.g. trapped-ion or rare-earth ion schemes.

quant-ph↗

arXiv2021

Coherent terahertz-to-microwave link using electro-optic-modulated Turing rolls

Arising from modulation instability, Turing rolls in optical Kerr microresonators have been used in the generation of optical frequency combs and the synthesis of microwave and terahertz frequencies. In this work, by applying electro-optic modulation on terahertz-frequency Turing rolls, we implement electro-optic frequency division with a microcomb to synthesize variable low-noise microwave signals. We also actively stabilize the terahertz oscillations to a microwave reference via intracavity power modulation, obtaining fractional frequency instabilities that are better than those of the free-running situation by up to six orders of magnitude. This study not only highlights the extraordinary spectral purity of Turing roll oscillations but also opens the way for bidirectional terahertz-to-microwave links with hybrid optical frequency comb techniques.

physics.optics↗

arXiv2020

Entanglement swapping between independent and asynchronous integrated photon-pair sources

Integrated photonics represents a technology that could greatly improve quantum communication networks in terms of cost, size, scaling, and robustness. A key benchmark for this is to demonstrate their performance in complex quantum networking protocols, such as entanglement swapping between independent photon-pair sources. Here, using time-resolved detection, and two independent and integrated Si$_3$N$_4$ microring resonator photon-pair sources, operating in the CW regime at telecom wavelengths, we obtained spectral purities up to $0.97 \pm 0.02$ and a HOM interference visibility between the two sources of $V_{\rm HOM}=93.2 \pm 1.6\,\%$. This results in entanglement swapping visibility as high as $91.2 \pm 3.4\,\%$

quant-ph↗

arXiv2020

Low-loss integrated nanophotonic circuits with layered semiconductor materials

Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding.

physics.optics↗

arXiv2020

High-yield wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

Low-loss photonic integrated circuits (PIC) and microresonators have enabled novel applications ranging from narrow-linewidth lasers, microwave photonics, to chip-scale optical frequency combs and quantum frequency conversion. To translate these results into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in fabrication of integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators can be attained at die-level throughput. For emerging nonlinear applications such as integrated travelling-wave parametric amplifiers and mode-locked lasers, PICs of length scales of up to a meter are required, placing stringent demands on yield and performance that have not been met with current fabrication techniques. Here we overcome these challenges and demonstrate a fabrication technology which meets all these requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 million, corresponding to a linear propagation loss of 1.0 dB/m, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances and cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB/m loss in dies of only 5x5 mm size. Using a modulation response measurement self-calibrated via the Kerr nonlinearity, we reveal that, strikingly, the intrinsic absorption-limited Q factor of our Si3N4 microresonators exceeds a billion. Transferring the present Si3N4 photonics technology to standard commercial foundries, and merging it with silicon photonics using heterogeneous integration technology, will significantly expand the scope of today's integrated photonics and seed new applications.

physics.app-ph↗

arXiv2020

Reconfigurable radiofrequency filters based on versatile soliton microcombs

The rapidly maturing integrated Kerr microcombs show significant potential for microwave photonics. Yet, state-of-the-art microcomb based radiofrequency (RF) filters have required programmable pulse shapers, which inevitably increase the system cost, footprint, and complexity. Here, by leveraging the smooth spectral envelope of single solitons, we demonstrate for the first time microcomb based RF filters free from any additional pulse shaping. More importantly, we achieve all-optical reconfiguration of the RF filters by exploiting the intrinsically rich soliton configurations. Specifically, we harness the perfect soliton crystals to multiply the comb spacing thereby dividing the filter passband frequencies. Also, a completely novel approach based on the versatile interference patterns of two solitons within one round-trip, enables wide reconfigurability of RF passband frequencies according to their relative azimuthal angles. The proposed schemes demand neither an interferometric setup nor another pulse shaper for filter reconfiguration, providing a practical route towards chip-scale, widely reconfigurable microcomb based RF filters.

physics.optics↗

arXiv2020

Monolithic piezoelectric control of soliton microcombs

High-speed laser frequency actuation is critical in all applications employing lasers and frequency combs, and is prerequisite for phase locking, frequency stabilization and stability transfer among multiple optical carriers. Soliton microcombs have emerged as chip-scale, broadband and low-power-consumption frequency comb sources.Yet, integrated microcombs relying on thermal heaters for on-chip actuation all exhibit only kilohertz actuation bandwidth. Consequently, high-speed actuation and locking of microcombs have been attained only with off-chip bulk modulators. Here, we present high-speed microcomb actuation using integrated components. By monolithically integrating piezoelectric AlN actuators on ultralow-loss Si3N4 photonic circuits, we demonstrate voltage-controlled soliton tuning, modulation and stabilization. The integrated AlN actuators feature bi-directional tuning with high linearity and low hysteresis, operate with 300 nW power and exhibit flat actuation response up to megahertz frequency, significantly exceeding bulk piezo tuning bandwidth. We use this novel capability to demonstrate a microcomb engine for parallel FMCW LiDAR, via synchronously tuning the laser and microresonator. By applying a triangular sweep at the modulation rate matching the frequency spacing of HBAR modes, we exploit the resonant build-up of bulk acoustic energy to significantly lower the required driving to a CMOS voltage of only 7 Volts. Our approach endows soliton microcombs with integrated, ultralow-power-consumption, and fast actuation, significantly expanding the repertoire of technological applications.

physics.app-ph↗

arXiv2019

Nanophotonic soliton-based microwave synthesizers

Microwave photonic technologies, which upshift the carrier into the optical domain to facilitate the generation and processing of ultrawide-band electronic signals at vastly reduced fractional bandwidths, have the potential to achieve superior performance compared to conventional electronics for targeted functions. For microwave photonic applications such as filters, coherent radars, subnoise detection, optical communications and low-noise microwave generation, frequency combs are key building blocks. By virtue of soliton microcombs, frequency combs can now be built using CMOS compatible photonic integrated circuits, operated with low power and noise, and have already been employed in system-level demonstrations. Yet, currently developed photonic integrated microcombs all operate with repetition rates significantly beyond those that conventional electronics can detect and process, compounding their use in microwave photonics. Here we demonstrate integrated soliton microcombs operating in two widely employed microwave bands, X- and K-band. These devices can produce more than 300 comb lines within the 3-dB-bandwidth, and generate microwave signals featuring phase noise levels below 105 dBc/Hz (140 dBc/Hz) at 10 kHz (1 MHz) offset frequency, comparable to modern electronic microwave synthesizers. In addition, the soliton pulse stream can be injection-locked to a microwave signal, enabling actuator-free repetition rate stabilization, tuning and microwave spectral purification, at power levels compatible with silicon-based lasers (<150 mW). Our results establish photonic integrated soliton microcombs as viable integrated low-noise microwave synthesizers. Further, the low repetition rates are critical for future dense WDM channel generation schemes, and can significantly reduce the system complexity of photonic integrated frequency synthesizers and atomic clocks.

physics.optics↗

arXiv2019

Observation of stimulated Brillouin scattering in silicon nitride integrated waveguides

Silicon nitride (Si3N4) has emerged as a promising material for integrated nonlinear photonics and has been used for broadband soliton microcombs and low-pulse-energy supercontinuum generation. Therefore understanding all nonlinear optical properties of Si3N4 is important. So far, only stimulated Brillouin scattering (SBS) has not been reported. Here we observe, for the first time, backward SBS in fully cladded Si3N4 waveguides. The Brillouin gain spectrum exhibits an unusual multi-peak structure resulting from hybridization with with high-overtone bulk acoustic resonances (HBARs) of the silica cladding. The reported intrinsic Si3N4 Brillouin gain at 25 GHz is estimated as 7x10^-13 m/W. Moreover, the magnitude of the Si3N4 photoelastic constant is estimated as |p12| = 0.047 +/- 0.004. Since SBS imposes an optical power limitation for waveguides, our results explain the capability of Si3N4 to handle high optical power, central for integrated nonlinear photonics.

physics.optics↗

arXiv2019

Packaged photonic chip-based soliton microcomb using an ultralow-noise laser

Photonic chip-based soliton microcombs have shown rapid progress and have already been used in many system-level applications, including coherent communications, astrophysical spectrometer calibration and ultrafast ranging. While there has been substantial progress in realizing soliton microcombs that rely on compact laser diodes, culminating in devices that only utilize a semiconductor amplifier or a self-injection-locked laser as a pump source, accessing and generating single soliton states with electronically detectable line rates from a compact laser module has remained challenging. Here we demonstrate a current-initiated, $\mathrm{Si_3N_4}$ chip-based, 99-GHz soliton microcomb driven directly by an ultra-compact, low-noise laser. This approach does not require any fast laser tuning mechanism, and single soliton states can be accessed by changing the current of the laser diode. A simple, yet reliable, packaging technique has been developed to demonstrate the viability of such a microcomb system in field-deployable applications.

physics.app-ph↗

arXiv2019

Thermo-refractive noise in silicon nitride microresonators

Thermodynamic noise places a fundamental limit on the frequency stability of dielectric optical resonators. Here, we present the characterization of thermo-refractive noise in photonic-chip-based silicon nitride microresonators and show that thermo-refractive noise is the dominant thermal noise source in the platform. We employed balanced homodyne detection to measure the thermo-refractive noise spectrum of microresonators of different diameters. The measurements are in good agreement with theoretical models and finite element method simulations. Our characterization sets quantitative bounds on the scaling and absolute magnitude of thermal noise in photonic chip-based microresonators. An improved understanding of thermo-refractive noise can prove valuable in the design considerations and performance limitations of future photonic integrated devices.

physics.optics↗

arXiv2018

Electrically pumped photonic integrated soliton microcomb

Optical frequency combs have revolutionized frequency metrology and timekeeping, and can be used in a wide range of optical technologies. Advances are under way that allow dramatic miniaturization of optical frequency combs using Kerr nonlinear optical microresonators, where broadband and coherent optical frequency combs can be generated from a continuous wave laser. Such `microcombs', provide a broad bandwidth with low power consumption, unprecedented form factor, wafer scale fabrication compatibility. For future high volume applications, integration and electrical pumping of soliton microcombs is essential. To date, however, microcombs still rely on optical pumping by bulk external laser modules that provide the required coherence, frequency agility and power levels for soliton formation. Electrically-driven, chip-integrated microcombs are inhibited by the high threshold power for soliton formation, typically exceeding the power of integrated silicon based lasers, and the required frequency agility for soliton initiation. Recent advances in high-Q Si3N4 microresonators suggest that electrically driven soliton microcombs are possible. Here we demonstrate an electrically-driven, chip-integrated soliton microcomb by coupling an indium phosphide (III-V) multiple-longitudinal-mode laser diode chip to a high-Q Si3N4 photonic integrated microresonator. We observe that self-injection locking of the laser diode to the microresonator, which is accompanied by a x1000 fold narrowing of the laser linewidth, can simultaneously initiate the formation of dissipative Kerr solitons. By tuning the current, we observe a transition from modulation instability, breather solitons to single soliton states. The system requires less than 1 Watt of electrical power, operates at electronically-detectable sub-100 GHz mode spacing and can fit in a volume of ca. 1cm3.

physics.optics↗

arXiv2018

Ultralow-power chip-based soliton microcombs for photonic integration

The generation of dissipative Kerr solitons in optical microresonators has provided a route to compact frequency combs of high repetition rate, which have already been employed for optical frequency synthesizers, ultrafast ranging, coherent telecommunication and dual-comb spectroscopy. Silicon nitride (Si$_3$N$_4$) microresonators are promising for photonic integrated soliton microcombs. Yet to date, soliton formation in Si$_3$N$_4$ microresonators at electronically detectable repetition rates, typically less than 100 GHz, is hindered by the requirement of external power amplifiers, due to the low quality ($Q$) factors, as well as by thermal effects which necessitate the use of frequency agile lasers to access the soliton state. These requirements complicate future photonic integration, heterogeneous or hybrid, of soliton microcomb devices based on Si$_3$N$_4$ microresonators with other active or passive components. Here, using the photonic Damascene reflow process, we demonstrate ultralow-power single soliton formation in high-Q ($Q_0>15\times10^6$) Si$_3$N$_4$ microresonators with 9.8 mW input power (6.2 mW in the waveguide) for devices of electronically detectable, 99 GHz repetition rate. We show that solitons can be accessed via simple, slow laser piezo tuning, in many resonances in the same sample. These power levels are compatible with current silicon-photonics-based lasers for full photonic integration of soliton microcombs, at repetition rates suitable for applications such as ultrafast ranging and coherent communication. Our results show the technological readiness of Si$_3$N$_4$ optical waveguides for future all-on-chip soliton microcomb devices.

physics.optics↗

arXiv2018

Spatial multiplexing of soliton microcombs

Dual-comb interferometry utilizes two optical frequency combs to map the optical field's spectrum to a radio-frequency signal without using moving parts, allowing improved speed and accuracy. However, the method is compounded by the complexity and demanding stability associated with operating multiple laser frequency combs. To overcome these challenges, we demonstrate simultaneous generation of multiple frequency combs from a single optical microresonator and a single continuous-wave laser. Similar to space-division multiplexing, we generate several dissipative Kerr soliton states - circulating solitonic pulses driven by a continuous-wave laser - in different spatial (or polarization) modes of a $\mathrm{MgF_2}$ microresonator. Up to three distinct combs are produced simultaneously, featuring excellent mutual coherence and substantial repetition rate differences, useful for fast acquisition and efficient rejection of soliton intermodulation products. Dual-comb spectroscopy with amplitude and phase retrieval, as well as optical sampling of a breathing soliton, is realised with the free-running system. Compatibility with photonic-integrated resonators could enable the deployment of dual- and triple-comb-based methods to applications where they remained impractical with current technology.

physics.optics↗

arXiv2018

Double inverse nanotapers for efficient light coupling to integrated photonic devices

Efficient light coupling into integrated photonic devices is of key importance to a wide variety of applications. "Inverse nanotapers" are widely used, in which the waveguide width is reduced to match an incident mode. Here, we demonstrate novel, "double inverse" tapers, in which we taper both the waveguide height, as well as the width. We demonstrate that in comparison to regular inverse tapers, the double inverse tapers have excellent polarization-independent coupling. In addition, the optimum coupling is achieved with much larger taper dimension, enabling the use of photolithography instead of electron beam lithography, relevant for applications at near-IR and visible wavelengths. The low coupling loss makes them particularly suitable for nonlinear photonics, e.g. supercontinuum and soliton micro-comb generation.

physics.app-ph↗

arXiv2018

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides

On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear integrated photonic platforms still feature propagation losses orders of magnitude higher than in standard optical fiber. The tight confinement and high index contrast of integrated waveguides make them highly susceptible to fabrication induced surface roughness. Therefore, microresonators with ultra-high Q factors are, to date, only attainable in polished bulk crystalline, or chemically etched silica based devices, that pose however challenges for full photonic integration. Here, we demonstrate the fabrication of silicon nitride ($\mathrm{Si_3N_4}$) waveguides with unprecedentedly smooth sidewalls and tight confinement with record low propagation losses. This is achieved by combining the photonic Damascene process with a novel reflow process, which reduces etching roughness, while sufficiently preserving dimensional accuracy. This leads to previously unattainable \emph{mean} microresonator Q factors larger than $5\times10^6$ for tightly confining waveguides with anomalous dispersion. Via systematic process step variation and two independent characterization techniques we differentiate the scattering and absorption loss contributions, and reveal metal impurity related absorption to be an important loss origin. Although such impurities are known to limit optical fibers, this is the first time they are identified, and play a tangible role, in absorption of integrated microresonators. Taken together, our work provides new insights in the origins of propagation losses in $\mathrm{Si_3N_4}$ waveguides and provides the technological basis for integrated nonlinear photonics in the ultra-high Q regime.

physics.app-ph↗