Low-loss integrated nanophotonic circuits with layered semiconductor materials

Tianyi Liu; Ioannis Paradisanos; Jijun He; Alisson R. Cadore; Junqiu Liu; Mikhail Churaev; Rui Ning Wang; Arslan S. Raja; Clément Javerzac-Galy; Philippe Rölli; Domenico De Fazio; Barbara L. T. Rosa; Sefaattin Tongay; Giancarlo Soavi; Andrea C. Ferrari; Tobias J. Kippenberg

doi:10.1021/acs.nanolett.0c04149

arXiv · 2010.06014

Low-loss integrated nanophotonic circuits with layered semiconductor materials

Tianyi Liu·Ioannis Paradisanos·Jijun He·Alisson R. Cadore·Junqiu Liu·Mikhail Churaev·Rui Ning Wang·Arslan S. Raja·Clément Javerzac-Galy·Philippe Rölli·Domenico De Fazio·Barbara L. T. Rosa·Sefaattin Tongay·Giancarlo Soavi·Andrea C. Ferrari·Tobias J. Kippenberg

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Abstract

Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding.

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Tianyi Liu, Ioannis Paradisanos, Jijun He, Alisson R. Cadore, Junqiu Liu, Mikhail Churaev, Rui Ning Wang, Arslan S. Raja, Clément Javerzac-Galy, Philippe Rölli, Domenico De Fazio, Barbara L. T. Rosa, Sefaattin Tongay, Giancarlo Soavi, Andrea C. Ferrari, Tobias J. Kippenberg. 2020-10-12. Low-loss integrated nanophotonic circuits with layered semiconductor materials. https://doi.org/10.1021/acs.nanolett.0c04149

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