arXiv subjects

Arvind Ajoy

Publications and source records attributed to Arvind Ajoy.

10 recordsLinked to original sources

arXiv2025

Synchronous polarization switching at sub-coercive fields through stochastic resonance in ferroelectric thin-film capacitors

Stochastic resonance (SR) is a phenomenon by which the presence of noise in a non-linear system allows for detection of a weak sub-threshold signal, or in a bi-stable system allows for sub-coercive switching between the two states. Simple theory suggests that SR occurs when the Kramers rate (rk) of the bistable system, which is a function of noise and applied voltage, is twice the drive frequency (fsignal). Here, we demonstrate the synchronous switching of polarization with a sub-coercive voltage waveform, in a thin film ferroelectric lead zirconium titanate (PZT) capacitor through SR. We employ independent figures of merit (FOM) such as cross-covariance, output power and signal-to-noise ratio to experimentally identify the optimal noise for synchronous switching. We further experimentally measure the Kramers time in the ferroelectric, and show that FOMs indeed peak near the noise predicted by the SR condition. We also model the device characteristics using the stochastic Time Dependent Landau Ginzburg (TDGL) formulation, and capture the experimentally observed polarization switching under application of sub-coercive voltage, assisted by noise. Finally, we show a proof-of-concept implementation of detecting sub-threshold frequency-shift-key signals (FSK) in noisy communication channels using our ferroelectric PZT devices.

physics.app-ph↗

arXiv2022

Analysis of Ferroelectric Negative Capacitance-Hybrid MEMS Actuator Using Energy-Displacement Landscape

We propose an energy-based framework to analyze the statics and dynamics of a ferroelectric negative capacitance-hybrid Microelectromechanical System (MEMS) actuator. A mapping function that relates the charge on the ferroelectric to displacement of the movable electrode, is used to obtain the Hamiltonian of the hybrid actuator in terms of displacement. We then use graphical energy-displacement and phase portrait plots to analyze static pull-in, dynamic pull-in and pull-out phenomena of the hybrid actuator. Using these, we illustrate the low-voltage operation of the hybrid actuator to static and step inputs, as compared to the standalone MEMS actuator. The results obtained are in agreement with the analytical predictions and numerical simulations. The proposed framework enables straightforward inclusion of adhesion between the contacting surfaces, modeled using van der Waals force. We show that the pull-in voltage is not affected, while the pull-out voltage is reduced due to adhesion. The proposed framework provides a physics-based tool to design and analyze negative capacitance based low-voltage MEMS actuators.

eess.SY↗

arXiv2021

Kramers' escape problem for white noise driven switching in ferroelectrics

A simulation-based study of stochastic resonance (SR) in a ferroelectric capacitor is presented. The SR phenomenon involves the detection of weak signals by adding an optimal amount noise to a non-linear system. This is linked with Kramers' escape problem, which deals with the escape of a particle undergoing Brownian motion over an energy barrier. The position of the particle is analogous to the polarisation dynamics of a ferroelectric. Within this framework, we numerically investigate SR in single domain ferroelectrics using the Landau-Ginzburg-Devonshire (LGD) theory. In addition, we use a model for multidomain ferroelectrics to demonstrate feasibility in real world applications. Our results show that SR in ferroelectrics is promising for the purpose of weak signal detection, given that these materials are widely used for various applications in the semiconductor industry.

cond-mat.stat-mech↗

arXiv2020

Analysis of Electrostatic MEMS Using Energy-Charge Landscape

A common way to analyze electrostatic microelectromechanical systems (MEMS) actuators is to use their energy-displacement landscape. Here, we describe an alternative approach to analyze electrostatic MEMS actuators using their energy-charge landscape. This technique involves coordinate transformation from displacement to charge, thereby formulating the Hamiltonian of electrostatic MEMS actuators in terms of charge. We investigate the use of the energy-charge landscape to analyze static pull-in, dynamic pull-in, and pull-out phenomena. The voltage expressions derived using this method are identical with those derived using the conventional energy-displacement landscape. In addition, we also obtain the expressions for charge under static and dynamic pull-in conditions. This work can aid in the design and analysis of electrostatic MEMS devices. As a case study, the analysis of a feedback capacitor-MEMS actuator system is presented to illustrate the application of the energy-charge landscape.

physics.app-ph↗

arXiv2019

Dynamics of Ferroelectric Negative Capacitance -- Electrostatic MEMS Hybrid Actuators

We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal for reduction in the dynamic pull-in and pull-out voltages of the hybrid actuators due to the negative capacitance of the ferroelectric. The proposed model also reveals the effect of ferroelectric thickness on the dynamic pull-in and pull-out voltages and the effect of ferroelectric damping on the energy dissipated during actuation. We infer from our analysis that the hybrid actuators are better than the standalone MEMS actuators in terms of operating voltage and energy dissipation. Further, we show that one can trade-off a small part of the reduction in actuation voltage to achieve identical pull-in times in the hybrid and standalone MEMS actuators, while still consuming substantially lower energy in the former as compared to the latter. The circuit compatibility of the proposed hybrid actuator model makes it suitable for analysis and evaluation of various heterogeneous systems consisting of hybrid MEMS actuators and other electronic devices.

physics.app-ph↗

arXiv2015

Transistor Switches using Active Piezoelectric Gate Barriers

This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical capacitor resulting in a negative capacitance. The first consequence of this amplification is a boost in the on-current of the transistor. As a second consequence, employing the Lagrangian method, we find that by using the negative capacitance of a highly compliant piezoelectric barrier, one can potentially reduce the subthreshold slope of a transistor below the room temperature Boltzmann limit of 60 mV/decade. However, this may come at the cost of hysteretic behavior in the transfer characteristics.

cond-mat.mes-hall↗

arXiv2014

Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors

We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS2 in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements allowing estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 10^3, and with current densities of 1.02 μA/μm, and 0.79 μA/μm at VDS = 0.3 V and VBG = 1 V, respectively. Photocurrent measurements conducted on a MoS2 NT FET, revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS2 NT and NR FETs and was shown to be consistent with the measured data.

cond-mat.mes-hall↗

arXiv2014

Multiscale model for phonon-assisted band-to-band tunneling in semiconductors

We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the $[100]$, $[110]$ and $[111]$ directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in Tunnel FETs and in small geometry MOSFETs and FINFETs.

cond-mat.mes-hall↗

arXiv2014

Brillouin zone unfolding of Complex Bands in a nearest neighbour Tight Binding scheme

Complex bands $\vec{k}^{\perp}(E)$ in a semiconductor crystal, along a general direction $\vec{n}$, can be computed by casting Schrödinger's equation as a generalized polynomial eigenvalue problem. When working with primitive lattice vectors, the order of this eigenvalue problem can grow large for arbitrary $\vec{n}$. It is however possible to always choose a set of non-primitive lattice vectors such that the eigenvalue problem is restricted to be quadratic. The complex bands so obtained need to be unfolded onto the primitive Brillouin zone. In this paper, we present a unified method to unfold real and complex bands. Our method ensures that the measure associated with the projections of the non-primary wavefunction onto all candidate primary wavefunctions is invariant with respect to the energy $E$.

cond-mat.mes-hall↗

arXiv2014

Brillouin zone unfolding method for effective phonon spectra

Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure material, but problems arise when alloys are used. Specifically, only approximate bandstructures can be computed for random alloys and most often the Virtual Crystal Approximation (VCA) is used. Unfolding methods [T. B. Boykin, N. Kharche, G. Klimeck, and M. Korkusinski, J. Phys.: Condens. Matt. 19, 036203 (2007).] have proven very useful for tight-binding calculations of alloy electronic structure without the problems in the VCA, and the mathematical analogy between tight-binding and valence-force-field approaches to the phonon problem suggest they be employed here as well. However, there are some differences in the physics of the two problems requiring modifications to the electronic structure approach. We therefore derive a phonon alloy bandstructure (vibrational mode) approach based on our tight-binding electronic structure method, modifying the band-determination method to accommodate the different physical situation. Using the method, we study In$_x$Ga$_{1-x}$As alloys and find very good agreement with available experiments.

cond-mat.mes-hall↗