arXiv subjects

Arvind Maurya

Publications and source records attributed to Arvind Maurya.

16 recordsLinked to original sources

arXiv2026

Hall effect on nontrivial quadrupole order in quasi-kagome compound URhSn

This study focuses on the transport properties of the quasi-kagome compound URhSn, which exhibits successive phase transitions at TC =16 K (ferromagnetic phase) and TO =54 K (intermediate phase). A large anomalous Hall component is present along the easy-magnetization axis (H|| [0001]), and the Hall resistivity shows very complex temperature- and field-dependence, with a sign reversal at low temperatures. The Hall resistivity exhibits a nonlinear and unusual field-dependence. Interestingly, there exists an unusual Hall component that is not proportional to the magnetic susceptibility for H || [0001] in both the intermediate and ferromagnetic states. These results reveal unconventional transport properties of URhSn, providing important insights into nontrivial multipolar phases in 5f- electron systems.

cond-mat.str-el↗

arXiv2025

SLM4Offer: Personalized Marketing Offer Generation Using Contrastive Learning Based Fine-Tuning

Personalized marketing has emerged as a pivotal strategy for enhancing customer engagement and driving business growth. Academic and industry efforts have predominantly focused on recommendation systems and personalized advertisements. Nonetheless, this facet of personalization holds significant potential for increasing conversion rates and improving customer satisfaction. Prior studies suggest that well-executed personalization strategies can boost revenue by up to 40 percent, underscoring the strategic importance of developing intelligent, data-driven approaches for offer generation. This work introduces SLM4Offer, a generative AI model for personalized offer generation, developed by fine-tuning a pre-trained encoder-decoder language model, specifically Google's Text-to-Text Transfer Transformer (T5-Small 60M) using a contrastive learning approach. SLM4Offer employs InfoNCE (Information Noise-Contrastive Estimation) loss to align customer personas with relevant offers in a shared embedding space. A key innovation in SLM4Offer lies in the adaptive learning behaviour introduced by contrastive loss, which reshapes the latent space during training and enhances the model's generalizability. The model is fine-tuned and evaluated on a synthetic dataset designed to simulate customer behaviour and offer acceptance patterns. Experimental results demonstrate a 17 percent improvement in offer acceptance rate over a supervised fine-tuning baseline, highlighting the effectiveness of contrastive objectives in advancing personalized marketing.

cs.CL↗

arXiv2025

Exploring Low-Dimensional Magnetism in Cobalt Vanadates, ${A}$CoV$_{2}$O$_{7}$~(${A}$~=~Ca, Sr) : Crystal Growth and Magnetic Properties of Effective Spin-1/2 Zigzag Chains

We report the successful growth of high-quality single crystals of \ACVO, a quasi-one-dimensional zigzag chain compound containing Co$^{2+}$ ions, using the optical floating zone method. The crystal growth was stabilized under high-pressure argon-oxygen gas with slow growth rates, overcoming challenges associated with the incongruent melting behavior of this material. X-ray diffraction confirms the zigzag arrangement of Co$^{2+}$ ions, forming a quasi-one-dimensional chain structure. Magnetic susceptibility and heat capacity measurements reveal an antiferromagnetic phase transition at the N\'eel temperature ($T_{\text{N}} \sim 3.5$ K) and negative Curie-Weiss temperatures, indicative of dominant antiferromagnetic interactions. The distorted CoO$_6$ octahedral geometry and strong spin-orbit coupling suggest that Co$^{2+}$ ions likely exhibit an effective $J = 1/2 $ Kramers doublet state. The results presented here demonstrate the potential of \ACVO\ as a platform for investigating low-dimensional magnetism and quantum magnetic phenomena. These insights shed light on the role of the ${A}$-site ion in tuning the magnetic interactions, which will foster future research into the field-induced behavior in these cobalt vanadates.

cond-mat.str-el↗

arXiv2023

Impact of the Ce $4f$ states in the electronic structure of the intermediate-valence superconductor CeIr$_3$

The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ states. The contribution of the $\mathrm{Ce}~4f$ states to the density of states (DOS) at the Fermi energy was estimated to be nearly half of that of the $\mathrm{Ir}~5d$ states, implying that the $\mathrm{Ce}~4f$ states have a considerable contribution to the DOS at the Fermi energy. The $\mathrm{Ce}~3d$ core-level and $\mathrm{Ce}~3d$ X-ray absorption spectra were analyzed based on a single-impurity Anderson model. The number of the $\mathrm{Ce}~4f$ states in the ground state was estimated to be $0.8-0.9$, which is much larger than the values obtained in the previous studies (i.e., $0-0.4$).

cond-mat.str-el↗

arXiv2023

Fermi surface reconstruction due to the orthorhombic distortion in Dirac semimetal YbMnSb$_2$

Dirac semi-metal with magnetic atoms as constituents delivers an interesting platform to investigate the interplay of Fermi surface (FS) topology, electron correlation, and magnetism. One such family of semi-metal is YbMn$Pn_2$ ($Pn$ = Sb, Bi), which is being actively studied due to the intertwined spin and charge degrees of freedom. In this Letter, we investigate the relationship between the magnetic/crystal structures and FS topology of YbMnSb$_2$ using single crystal x-ray diffraction, neutron scattering, magnetic susceptibility, magnetotransport measurement and complimentary DFT calculation. Contrary to previous reports, the x-ray and neutron diffraction reveal that YbMnSb$_2$ crystallizes in an orthorhombic $Pnma$ structure with notable anti-phase displacement of the magnetic Mn ions that increases in magnitude upon cooling. First principles DFT calculation reveals a reduced Brillouin zone and more anisotropic FS of YbMnSb$_2$ compared to YbMnBi$_2$ as a result of the orthorhombicity. Moreover, the hole type carrier density drops by two orders of magnitude as YbMnSb$_2$ orders antiferromagnetically indicating band folding in magnetic ordered state. In addition, the Landau level fan diagram yields a non-trivial nature of the SdH quantum oscillation frequency arising from the Dirac-like Fermi pocket. These results imply that YbMnSb$_2$ is an ideal platform to explore the interplay of subtle lattice distortion, magnetic order, and topological transport arising from relativistic quasiparticles.

cond-mat.mtrl-sci↗

arXiv2021

Pressure induced multicriticality and electronic instability in quasi-kagome ferromagnet URhSn

We report an unconventional class of pressure induced quantum phase transition, possessing two bicritical points at 6.25 GPa in URhSn. This unique transformation accompanies a Fermi surface reconstruction, demarcating competing ordered phases suitably described with localized and itinerant description of the magnetic $5f$-electrons. Ferromagnetic fluctuations over a wide range of temperatures and pressures in the pressure-induced low temperature phase are evidenced by a robust $T^{5/3}$ temperature dependence of resistivity up to 11 GPa, which is a characteristic of elusive marginal Fermi-liquid state.

cond-mat.str-el↗

arXiv2018

Splitting Fermi Surfaces and Heavy Electronic States in Non-Centrosymmetric U3Ni3Sn4

We report the single-crystal growth of the non-centrosymmetric paramagnet U3Ni3Sn4 by the Bridgman method and the Fermi surface properties detected by de Haas-van Alphen (dHvA) experiments. We have also investigated single-crystal U3Ni3Sn4 by single-crystal X-ray diffraction, magnetization, electrical resistivity, and heat capacity measurements. The angular dependence of the dHvA frequencies reveals many closed Fermi surfaces, which are nearly spherical in topology. The experimental results are in good agreement with local density approximation (LDA) band structure calculations based on the 5f-itinerant model. The band structure calculation predicts many Fermi surfaces, mostly with spherical shape, derived from 12 bands crossing the Fermi energy. To our knowledge, the splitting of Fermi surfaces due to the non-centrosymmetric crystal in 5f-electron systems is experimentally detected for the first time. The temperature dependence of the dHvA amplitude reveals a large cyclotron effective mass of up to 35m0, indicating the heavy electronic state of U3Ni3Sn4 due to the proximity of the quantum critical point. From the field dependence of the dHvA amplitude, a mean free path of conduction electrons of up to 1950A is detected, reflecting the good quality of the grown crystal. The small splitting energy related to the antisymmetric spin-orbit interaction is most likely due to the large cyclotron effective mass.

cond-mat.str-el↗

arXiv2017

Magnetocaloric effect and magnetic phase diagram of EuRhAl4Si2

EuRhAl4Si2, crystallizes in tetragonal crystal structure and orders antiferromagnetically at ~12 K. The isothermal magnetization along the two principle directions is highly anisotropic despite Eu2+ being an S-state ion. The variation of entropy change, which is a measure of MCE, with field and temperature, calculated from the isothermal magnetization data taken at various temperatures along the principal crystallographic directions present interesting behavior in EuRhAl4Si2. In the magnetically ordered state the entropy change is non-monotonic below spin flip fields; however, in the paramagnetic region, it is negative irrespective of the strength of applied magnetic field. For H || [001] the maximum entropy change at 7 T is -21 J/Kg K around TN, which is large and comparable to the largest known values in this temperature range. The variation of the MCE with field strongly depends upon the direction of the applied magnetic field. Magnetic phase diagram of EuRhAl4Si2 derived from M(H) data is also constructed.

cond-mat.str-el↗

arXiv2017

Superzone gap formation and low lying crystal electric field levels in PrPd$_2$Ge$_2$ single crystal

The magnetocrystalline anisotropy exhibited in PrPd$_2$Ge$_2$ single crystal has been investigated by measuring the magnetization, magnetic susceptibility, electrical resistivity and heat capacity. PrPd$_2$Ge$_2$ crystallizes in the well known ThCr$_2$Si$_2$\--type tetragonal structure. The antiferromagnetic ordering is confirmed as 5.1~K with the [001]-axis as the easy axis of magnetization. A superzone gap formation is observed from the electrical resistivity measurement when the current is passed along the [001] direction. The crystal electric field (CEF) analysis on the magnetic susceptibility, magnetization and the heat capacity measurements confirms a doublet ground state with a relatively low over all CEF level splitting. The CEF level spacings and the Zeeman splitting at high fields become comparable and lead to metamagnetic transition at 34~T due to the CEF level crossing.

cond-mat.str-el↗

arXiv2015

Anisotropic physical properties of PrRhAl$_4$Si$_2$ single crystal a non-magnetic singlet ground state compound

We have grown the single crystal of PrRhAl$_4$Si$_2$, which crystallizes in the tetragonal crystal structure. From the low temperature physical property measurements like, magnetic susceptibility, magnetization, heat capacity and electrical resistivity, we found that this compound does not show any magnetic ordering down to 70~mK. Our crystal field calculations on the magnetic susceptibility and specific heat measurements reveal that the 9-fold degenerate $(2J+1)$ levels of Pr atom in PrRhAl$_4$Si$_2$, splits into 7 levels, with a singlet ground state and a well separated excited doublet state at 123~K, with a overall level splitting energy of 320~K.

cond-mat.str-el↗

arXiv2015

Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals

We report the synthesis and the magnetic properties of single crystalline CeRhAl$_4$Si$_2$ and CeIrAl$_4$Si$_2$ and their non magnetic La-analogs. The single crystals of these quaternary compounds were grown using Al-Si binary eutectic as flux. The anisotropic magnetic properties of the cerium compounds were explored in detail by means of magnetic susceptibility, isothermal magnetization, electrical resistivity, magnetoresistivity and heat capacity measurements. Both CeRhAl$_4$Si$_2$ and CeIrAl$_4$Si$_2$ undergo two antiferromagnetic transitions, first from the paramagnetic to an antiferromagnetic state at $T_{\rm N1}$~=~12.6~K and 15.5~K, followed by a second transition at lower temperatures $T_{\rm N2}$~=~9.4~K and 13.8~K, respectively. The paramagnetic susceptibility is highly anisotropic and its temperature dependence in the magnetically ordered state suggests the $c$-axis to be the relatively easy axis of magnetization. Concomitantly, isothermal magnetization at 2~K along the $c$-axis shows a sharp spin-flop transition accompanied by a sizeable hysteresis, while it varies nearly linearly with field along the [100] direction up to the highest field 14~T, of our measurement. The electrical resistivity provides evidence of the Kondo interaction in both compounds, inferred from its $-lnT$ behavior in the paramagnetic region. The heat capacity data confirm the bulk nature of the two magnetic transitions in each compound, and further confirm the presence of Kondo interaction by a reduced value of the entropy associated with the magnetic ordering. From the heat capacity data below 1~K, the coefficient of the linear term in the electronic heat capacity, $γ$, is inferred to be 195.6 and 49.4~mJ/mol K$^2$ in CeRhAl$_4$Si$_2$ and CeIrAl$_4$Si$_2$, respectively classifying these materials as moderate heavy fermion compounds.

cond-mat.str-el↗

arXiv2015

Magnetic properties and complex magnetic phase diagram in non centrosymmetric EuRhGe$_3$ and EuIrGe$_3$ single crystals

We report the magnetic properties of two Eu based compounds, single crystalline EuIrGe$_3$ and EuRhGe$_3$, inferred from magnetisation, electrical transport, heat capacity and $^{151}$Eu Mössbauer spectroscopy. These previously known compounds crystallise in the non-centrosymmetric, tetragonal, $I4mm$, BaNiSn$_3$-type structure. Single crystals of EuIrGe$_3$ and EuRhGe$_3$ were grown using high temperature solution growth method using In as flux. EuIrGe$_3$ exhibits two magnetic orderings at $T_{\rm N1}$ = 12.4 K, and $T_{\rm N2}$ = 7.3 K. On the other hand EuRhGe$_3$ presents a single magnetic transition with a $T_{\rm N}$ = 12 K. $^{151}$Eu Mössbauer spectra present evidence for a cascade of transitions from paramagnetic to incommensurate amplitude modulated followed by an equal moment antiferromagnetic phase at lower temperatures in EuIrGe$_3$, the transitions having a substantial first order character. On the other hand the $^{151}$Eu Mössbauer spectra at 4.2 and 9 K in EuRhGe$_3$ present evidence of a single magnetic transition. In both compounds a superzone gap is observed for the current density $J\parallel$ [001], which enhances with transverse magnetic field. The magnetisation measured up to 14 T shows the occurrence of field induced transitions, which are well documented in the magnetotransport data as well. The magnetic phase diagram constructed from these data is complex, revealing the presence of many phases in the $H-T$ phase space.

cond-mat.str-el↗

arXiv2014

Anisotropic putative "up-up-down" magnetic structure in EuTAl$_4$Si$_2$ (T = Rh and Ir)

We present detailed investigations in single crystals of two recently reported quaternary intermetallic compounds EuRhAl$_4$Si$_2$ and EuIrAl$_4$Si$_2$ employing magnetization, electrical resistivity in zero and applied fields, heat capacity and $^{151}$Eu Mössbauer spectroscopy measurements. The two compounds order antiferromagnetically at $T_{\rm N1}$ = 11.7 and 14.7\,K, respectively, each undergoing two magnetic transitions: the first from paramagnetic to incommensurate modulated antiferromagnetic, the second at lower temperature to a commensurate antiferromagnetic phase as confirmed by heat capacity and Mössbauer spectra. The magnetic properties in the ordered state present a large anisotropy despite Eu$^{2+}$ being an $S$-state ion for which the single-ion anisotropy is expected to be weak. Two features in the magnetization measured along the $c$-axis are prominent. At 1.8\,K, a ferromagnetic-like jump occurs at very low field to a value one third of the saturation magnetization (1/3 M$_0$) followed by a wide plateau up to 2\,T for T = Rh and 4\,T for T = Ir. At this field value, a sharp hysteretic spin-flop transition occurs to a fully saturated state (M$_0$). Surprisingly, the magnetization does not return to origin when the field is reduced to zero in the return cycle, as expected in an antiferromagnet. Instead, a remnant magnetization 1/3 M$_0$ is observed and the magnetic loop around the origin shows hysteresis. This suggests that the zero field magnetic structure has a ferromagnetic component, and we present a model with up to third neighbor exchange and dipolar interaction which reproduces the magnetization curves and hints to an "up-up-down" magnetic structure in zero field.

cond-mat.str-el↗

arXiv2014

EuNiGe3, an equal moment anisotropic antiferromagnet

Single crystals of EuNiGe$_3$ crystallizing in the non-centrosymmetric BaNiSn$_3$-type structure have been grown using In flux, enabling us to explore the anisotropic magnetic properties which was not possible with previously reported polycrystalline samples. The EuNiGe$_3$ single crystalline sample is found to order antiferromagnetically at 13.2 K as revealed from the magnetic susceptibility, heat capacity and electrical resistivity data. The low temperature magnetization M(H) is distinctly different for field parallel to ${ab}$-plane and $c$-axis; the ${ab}$-plane magnetization varies nearly linearly with field before the occurrence of an induced ferromagnetic phase (spin-flip) at 6.2 Tesla; on the other hand M(H) along the $c$-axis is accompanied by two metamagnetic transitions followed by a spin-flip at 4.1 T. A model including anisotropic exchange and dipole-dipole interactions reproduces the main features of magnetization plots but falls short of full representation. (H,T) phase diagrams have been constructed for the field applied along the principal directions. From the $^{151}$Eu Mössbauer spectra, we determine that the 13.2 K transition leads to an incommensurate antiferromagnetic intermediate phase followed by a transition near 10.5 K to a commensurate antiferromagnetic configuration.

cond-mat.str-el↗

arXiv2013

Anisotropic magnetic properties and crystal electric field studies on CePd$_2$Ge$_2$ single crystal

The anisotropic magnetic properties of the antiferromagnetic compound CePd$_2$Ge$_2$, crystallizing in the tetragonal crystal structure have been investigated in detail on a single crystal grown by Czochralski method. From the electrical transport, magnetization and heat capacity data, the Néel temperature is confirmed to be 5.1 K. Anisotropic behaviour of magnetization and resistivity is observed along the two principal crystallographic directions viz., [100] and [001]. The isothermal magnetization measured in the magnetically ordered state at 2 K exhibits a spin re-orientation at 13.5 T for field applied along [100] direction, whereas the magnetization was linear along the [001] direction attaining a value of 0.94 $μ_{\rm B}$/Ce at 14 T. The reduced value of the magnetization is attributed to the crystalline electric field (CEF) effects. A sharp jump in the specific heat at the magnetic ordering temperature is observed. After subtracting the phononic contribution, the jump in the heat capacity amounts to 12.5 J/K mol which is the expected value for a spin ${1}{2}$ system. From the CEF analysis of the magnetization data the excited crystal field split energy levels were estimated to be at 120 K and 230 K respectively, which quantitatively explain the observed Schottky anomaly in the heat capacity. A magnetic phase diagram has been constructed based on the field dependence of magnetic susceptibility and the heat capacity data.

cond-mat.str-el↗

arXiv2011

Facile fabrication of lateral nanowire wrap-gate devices with improved performance

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.

cond-mat.mes-hall↗