Facile fabrication of lateral nanowire wrap-gate devices with improved performance

Sajal Dhara; Shamashis Sengupta; Hari S. Solanki; Arvind Maurya; Arvind Pavan R.; M. R. Gokhale; Arnab Bhattacharya; Mandar M. Deshmukh

doi:10.1063/1.3634010

arXiv · 1106.0796

Facile fabrication of lateral nanowire wrap-gate devices with improved performance

Sajal Dhara·Shamashis Sengupta·Hari S. Solanki·Arvind Maurya·Arvind Pavan R.·M. R. Gokhale·Arnab Bhattacharya·Mandar M. Deshmukh

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Abstract

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.

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Sajal Dhara, Shamashis Sengupta, Hari S. Solanki, Arvind Maurya, Arvind Pavan R., M. R. Gokhale, Arnab Bhattacharya, Mandar M. Deshmukh. 2011-06-04. Facile fabrication of lateral nanowire wrap-gate devices with improved performance. https://doi.org/10.1063/1.3634010

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