arXiv subjects

Ashwin Ramasubramaniam

Publications and source records attributed to Ashwin Ramasubramaniam.

18 recordsLinked to original sources

arXiv2026

Efficient prediction of highly anisotropic excitonic properties in the layered antiferromagnet CrSBr via time-dependent density functional theory

CrSBr, a layered anisotropic van der Waals antiferromagnet, has recently emerged as a versatile platform where strong coupling between optical excitations and magnetic order enables magneto-optical control in low dimensions. While experiments have progressed rapidly, predictive and reliable ab initio descriptions remain limited to self-consistent, many-body perturbation theory that is computationally expensive and technically challenging. Here we present an alternative approach that accurately predicts the electronic and optical properties of CrSBr at substantially lower computational cost, while retaining quantitative accuracy in the coupling between excitons and magnetic order. Using a tuned hybrid density functional with on-site corrections, we reproduce fundamental and optical gaps and quantitatively capture the interaction between excitonic transitions and magnetic order. We then employ this functional to investigate excitonic shifts induced by spin canting, that would result from applying an external magnetic field. Our results establish an efficient framework for modeling excitonic and magneto-optical phenomena in layered magnetic semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Automated Workflow for Non-Empirical Wannier-Localized Optimal Tuning of Range-Separated Hybrid Functionals

We introduce an automated workflow for generating non-empirical Wannier-localized optimally-tuned screened range-separated hybrid (WOT-SRSH) functionals. WOT-SRSH functionals have been shown to yield highly accurate fundamental band gaps, band structures, and optical spectra for bulk and 2D semiconductors and insulators. Our workflow automatically and efficiently determines the WOT-SRSH functional parameters for a given crystal structure and composition, approximately enforcing the correct screened long-range Coulomb interaction and an ionization potential ansatz. In contrast to previous manual tuning approaches, our tuning procedure relies on a new search algorithm that only requires a few hybrid functional calculations with minimal user input. We demonstrate our workflow on 23 previously studied semiconductors and insulators, reporting the same high level of accuracy. By automating the tuning process and improving its computational efficiency, the approach outlined here enables applications of the WOT-SRSH functional to compute spectroscopic and optoelectronic properties for a wide range of materials.

cond-mat.mtrl-sci↗

arXiv2025

Foundations of the ionization potential condition for localized electron removal in density functional theory

Optimal tuning of functional parameters in density functional theory approximations, based on enforcing the ionization potential theorem, has emerged as the method of choice for the non-empirical prediction of the electronic structure of finite systems. This method has recently been extended to the bulk limit, based on an ansatz that generalizes the ionization potential theorem to the removal of an electron from a localized Wannier orbital. This Wannier-localization based optimal tuning method has been shown to be highly successful for a wide range of periodic systems, accurately predicting electronic and optical properties. However, a rigorous theoretical justification for its foundational ansatz has been lacking. Here, we establish an ionization potential condition for the removal of a localized electron, by extending the piecewise linearity and Janak's theorems in density functional theory. We also provide numerical evidence supporting our theory.

physics.chem-ph↗

arXiv2025

Resolving Contradictory Estimates of Band Gaps of Bulk PdSe$_2$: A Wannier-Localized Optimally-Tuned Screened Range-Separated Hybrid Density Functional Theory Study

Palladium diselenide (PdSe$_2$) -- a layered van der Waals material -- is attracting significant attention for optoelectronics due to the wide tunability of its band gap from the infrared through the visible range as a function of the number of layers. However, there continues to be disagreement over the precise nature and value of the optical band gap of bulk PdSe$_2$, owing to the rather small value of this gap that complicates experimental measurements and their interpretation. Here, we design and employ a Wannier-localized optimally-tuned screened range-separated hybrid (WOT-SRSH) functional to investigate the electronic bandstructures and optical absorption spectra of bulk and monolayer PdSe$_2$. In particular, we account carefully for the finite exciton center-of-mass momentum within a time-dependent WOT-SRSH framework to calculate the \emph{indirect} optical gap and absorption onset accurately. Our results agree well with the best available photoconductivity measurements, as well as with state-of-the-art many-body perturbation theory calculations, confirming that bulk PdSe$_2$ has an optical gap in the mid-infrared (upper-bound of 0.44 eV). More generally, this work further bolsters the utility of the WOT-SRSH approach for predictive modeling of layered semiconductors.

cond-mat.mtrl-sci↗

arXiv2024

Piezoelectric Electrostatic Superlattices in Monolayer MoS$_2$

Modulation of electronic properties of materials by electric fields is central to the operation of modern semiconductor devices, providing access to complex electronic behaviors and greater freedom in tuning the energy bands of materials. Here, we explore one-dimensional superlattices induced by a confining electrostatic potential in monolayer MoS$_2$, a prototypical two-dimensional semiconductor. Using first-principles calculations, we show that periodic potentials applied to monolayer MoS$_2$ induce electrostatic superlattices in which the response is dominated by structural distortions relative to purely electronic effects. These structural distortions reduce the intrinsic band gap of the monolayer substantially while also polarizing the monolayer through piezoelectric coupling, resulting in spatial separation of charge carriers as well as Stark shifts that produce dispersive minibands. Importantly, these minibands inherit the valley-selective magnetic properties of monolayer MoS$_2$, enabling fine control over spin-valley coupling in MoS$_2$ and similar transition-metal dichalcogenides.

cond-mat.mtrl-sci↗

arXiv2023

Nonlinear Self-Calibrated Spectrometer with Single GeSe-InSe Heterojunction Device

Optical spectroscopy the measurement of electromagnetic spectra is fundamental to various scientific domains and serves as the building block of numerous technologies. Computational spectrometry is an emerging field that employs an array of photodetectors with different spectral responses or a single photodetector device with tunable spectral response, in conjunction with numerical algorithms, for spectroscopic measurements. Compact single photodetectors made from layered materials are particularly attractive, since they eliminate the need for bulky mechanical and optical components used in traditional spectrometers and can easily be engineered as heterostructures to optimize device performance. However, compact tunable photodetectors are typically nonlinear devices and this adds complexity to extracting optical spectra from the device response. Here, we report on the training of an artificial neural network (ANN) to recover the full nonlinear spectral photoresponse of a nonlinear problem of high dimensionality of a single GeSe-InSe p-n heterojunction device. We demonstrate the functionality of a calibrated spectrometer in the spectral range of 400-1100 nm, with a small device footprint of ~25X25 micrometers, and we achieve a mean reconstruction error of 0.0002 for the power-spectrum at a spectral resolution of 0.35 nm. Using our device, we demonstrate a solution to metamerism, an apparent matching of colors with different power spectral distributions, which is a fundamental problem in optical imaging.

physics.app-ph↗

arXiv2023

Transferable screened range-separated hybrid functionals for electronic and optical properties of van der Waals materials

The accurate description of electronic properties and optical absorption spectra is a long-standing challenge for density functional theory. Recently, the introduction of screened range-separated hybrid (SRSH) functionals for solid-state materials has allowed for the calculation of fundamental band gaps and optical absorption spectra that are in very good agreement with many-body perturbation theory. However, since solid-state SRSH functionals are typically tuned to reproduce the properties of bulk phases, their transferability to low-dimensional structures, which experience substantially different screening than in the bulk, remains an open question. In this work, we explore the transferability of SRSH functionals to several prototypical van der Waals materials, including transition-metal sulfides and selenides, indium selenide, black phosphorus, and hexagonal boron nitride. Considering the bulk and a monolayer of these materials as limiting cases, we show that the parameters of the SRSH functional can be determined systematically, using only the band-edge quasiparticle energies of these extremal structural phases as fitting targets. The resulting SRSH functionals can describe both electronic bandstructures and optical absorption spectra with accuracy comparable to more demanding ab initio many-body perturbation theory (GW and Bethe-Salpeter equation) approaches. Selected examples also demonstrate that the SRSH parameters, obtained from the bulk and monolayer reference structures, display good accuracy for bandstructures and optical spectra of bilayers, indicating a degree of transferability that is independent of the fitting procedure.

cond-mat.mtrl-sci↗

arXiv2022

Catalysts for the hydrogen evolution reaction in alkaline medium: Configuring a cooperative mechanism at the Ag-Ag$_2$S-MoS$_2$ interface

Designing electrocatalysts for HER in alkaline conditions to overcome the sluggish kinetics associated with the additional water dissociation step is a recognized challenge in promoting the hydrogen economy. To this end, delicately tuning the atomic-scale structure and surface composition of nanoparticles is a common strategy and, specifically, making use of hybrid structures, can produce synergistic effects that lead to highly active catalysts. Here, we present a core-shell catalyst of Ag@MoS$_2$ that shows promising results towards the hydrogen evolution reaction (HER) in both 0.5 M H2SO4 and 0.5 M KOH. In this hybrid structure, the MoS$_2$ shell is strained and defective, and charge transfer occurs between the conductive core and the shell, contributing to the electrocatalytic activity. The shelling process results in a large fraction of Ag$_2$S in the cores, and adjusting the relative fractions of Ag, Ag$_2$S, and MoS$_2$ leads to improved catalytic activity and fast charge-transfer kinetics. We suggest that the enhancement of alkaline HER is associated with a cooperative effect of the interfaces, where the Ag(I) sites in Ag$_2$S drive the water dissociation step, and the formed hydrogen subsequently recombines on the defective MoS$_2$ shell. This study demonstrates the benefits of hybrid structures as functional nanomaterials and provides a scheme to activate MoS$_2$ for HER in alkaline conditions.

cond-mat.mtrl-sci↗

arXiv2020

Scalable first-principles-informed quantum transport theory in two-dimensional materials

Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively determine the atomistic potentials associated with defects and impurities, they are ineffective for direct modeling of carrier transport properties at length scales relevant for device applications. Here, we develop a scalable first-principles-informed quantum transport theory to investigate the carrier transport properties of 2D materials. We derive a non-asymptotic quantum scattering framework to obtain transport properties in proximity to scattering centers. We then bridge our scattering framework with $\textit{k}\cdot\textit{p}$ perturbation theory, with inputs from first-principles electronic structure calculations, to construct a versatile multiscale formalism that enables modeling of realistic devices at the mesoscale. Our formalism also accounts for the crucial contributions of decaying evanescent modes across heterointerfaces. We apply this formalism to study electron transport in lateral transition-metal dichalcogenide (TMDC) heterostructures and show that material inclusions can lead to an enhancement in electron mobility by an order of magnitude larger than pristine TMDCs.

cond-mat.mes-hall↗

arXiv2020

Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices

Increasing demands for renewable sources of energy has been a major driving force for developing efficient thermoelectric materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDC) have emerged as promising candidates for thermoelectric applications due to their large effective mass and low thermal conductivity. In this article, we study the thermoelectric performance of lateral TMDC heterostructures within a multiscale quantum transport framework. Both $n$-type and $p$-type lateral heterostructures are considered for all possible combinations of semiconducting TMDCs: MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$. The band alignment between these materials is found to play a crucial in enhancing the thermoelectric figure-of-merit ($ZT$) and power factor far beyond those of pristine TMDCs. In particular, we show that the room-temperature $ZT$ value of $n$-type WS$_2$ with WSe$_2$ triangular inclusions, is five times larger than the pristine WS$_2$ monolayer. $p$-type MoSe$_2$ with WSe$_2$ inclusions is also shown to have a room-temperature $ZT$ value about two times larger than the pristine MoSe$_2$ monolayer. The peak power factor values calculated here, are the highest reported amongst gapped 2D monolayers at room temperature. Hence, 2D lateral TMDC heterostructures open new avenues to develop ultra-efficient, planar thermoelectric devices.

cond-mat.mtrl-sci↗

arXiv2018

Realizing Giant Magneto-Optical Effects in 3D Topological Insulators Without Magnetic Fields

Topological insulators display unusual light-matter interactions due to the helical nature of surface electronic states. We study the near-field interaction of light propagating in an optical fiber with crystals of Sb2Te3, a 3D topological insulator (TI), and observe a large apparent Faraday rotation. The origin of this unexpected polarization rotation in the optical fiber is attributed to a magneto-optical Kerr effect at the TI-fiber interface. We show that the combined effects of time-reversal symmetry breaking, which arises from Zeeman coupling of the electromagnetic field with the surface electrons of the TI, and inversion symmetry breaking of optical excitations, which arises from the exponential decay of the evanescent light across the TI crystal, are central to realizing this giant polarization rotation. Our work demonstrates a facile approach for realizing large magneto-optical effects without any magnetic fields by exploiting the unique physics of light-matter interactions at TI surfaces.

cond-mat.mtrl-sci↗

arXiv2016

Protective Molecular Passivation of Black Phosphorous

Black phosphorous (BP) is one of the most interesting layered materials, bearing promising potential for emerging electronic and optoelectronic device technologies. The crystalline structure of BP displays in-plane anisotropy in addition to the out-of-plane anisotropy characteristic to layered materials. Therefore, BP supports anisotropic optical and transport responses that can enable unique device architectures. Its thickness-dependent direct bandgap varies in the range of around 0.3-2.0 eV (from single-layer to bulk, respectively), making BP suitable to optoelectronics in a broad spectral range. With high room-temperature mobility, exceeding 1,000 cm2V-1s-1 in thin films, BP is also a very promising material for electronics. However, BP is sensitive to oxygen and humidity due to its three-fold coordinated atoms. The surface electron lone pairs are reactive and can lead to structural degradation upon exposure to air, leading to significant device performance degradation in ambient condition. Here, we report a viable solution to overcome degradation in few-layer BP by passivating the surface with self-assembled monolayers of octadecyltrichlorosilane (OTS) that provide long-term stability in ambient conditions. Importantly, we show that this treatment does not cause any undesired carrier doping of the bulk channel material, thanks to the emergent hierarchical interface structure. Our approach is compatible with conventional electronic materials processing technologies thus providing an immediate route toward practical applications in BP devices.

cond-mat.mtrl-sci↗

arXiv2016

Activation of new Raman modes by inversion symmetry breaking in type II Weyl semimetal candidate T'-MoTe2

We synthesized distorted octahedral(T') molybdenum ditelluride (MoTe2) and investigated its vibrational properties with Raman spectroscopy, density functional theory and symmetry analysis. Compared to the results from high temperature centrosymmetric monoclinic (T'mo) phase, four new Raman bands emerge in the low temperature orthorhombic (T'or) phase, which was recently predicted to be a type II Weyl semimetal. Crystal-angle-dependent, light-polarization-resolved measurements indicate that all the observed Raman peaks belong to two categories: those vibrating along the zigzag Mo atomic chain (z-mode) and those vibrating in the mirror plane (m-mode) perpendicular to the zigzag chain. Interestingly the low energy shear z-mode and shear m-mode, absent from the T'mo spectra, become activated when sample cooling induces a phase transition to the T'or crystal structure. We interpret this observation as a consequence of inversion-symmetry breaking, which is crucial for the existence of Weyl fermions in the layered crystal. Our temperature dependent Raman measurements further show that both the high energy m-mode at 130 cm-1 and the low energy shear m-mode at 12 cm-1 provide useful gauges for monitoring the broken inversion symmetry in the crystal.

cond-mat.mes-hall↗

arXiv2016

Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers

Stokes and anti-Stokes Raman scattering are performed on atomic layers of hexagonal molybdenum ditelluride (MoTe2), a prototypical transition metal dichalcogenide (TMDC) semiconductor. The data reveal all six types of zone center optical phonons, along with their corresponding Davydov splittings, which have been challenging to see in other TMDCs. We discover that the anti-Stokes Raman intensity of the low energy layer-breathing mode becomes more intense than the Stokes peak under certain experimental conditions, and find the effect to be tunable by excitation frequency and number of atomic layers. These observations are interpreted as a result of resonance effects arising from the C excitons in the vicinity of the Brillouin zone center in the photon-electron-phonon interaction process.

cond-mat.mtrl-sci↗

arXiv2016

Inversion-symmetry-breaking-activated shear Raman bands in $T'$-MoTe$_2$

Type-II Weyl fermion nodes, located at the touching points between electron and hole pockets, have been recently predicted to occur in distorted octahedral ($T'$) transition metal dichalcogenide semimetals, contingent upon the condition that the layered crystal has the noncentrosymmetric orthorhombic ($T'_{or}$) stacking. Here, we report on the emergence of two shear Raman bands activated by inversion symmetry breaking in $T'$-MoTe$_2$ due to sample cooling. Polarization and crystal orientation resolved measurements further point to a phase transition from the monoclinic ($T'_{mo}$) structure to the desired $T'_{or}$ lattice. These results provide spectroscopic evidence that low-temperature $T'$-MoTe$_2$ is suitable for probing type-II Weyl physics.

cond-mat.mes-hall↗

arXiv2014

Two-Dimensional Material Nanophotonics

The emerging two-dimensional (2D) materials exhibit a wide range of electronic properties, ranging from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides such as molybdenum disulfide, to semi-metallic graphene. Here, we first review the optical properties and applications of a variety of 2D materials, followed by two different approaches to enhance their interactions with light: through their integration with external photonic structures and through their intrinsic polaritonic resonances. Finally, we cover a narrow bandgap layered material, black phosphorus, which serendipitously bridges the zero gap graphene and the relatively large-bandgap TMDCs. The plethora of 2D materials and their heterostructures, together with the approaches for enhancing light-matter interaction offers the promise of scientific discoveries and nanophotonics technologies across a wide range of electromagnetic spectrum.

cond-mat.mes-hall↗

arXiv2010

Tunable band gaps in bilayer graphene-BN heterostructures

We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that the graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.

cond-mat.mtrl-sci↗

arXiv2010

Comment on "Gap opening in graphene by shear strain"

G. Cocco, E. Cadelano, and L. Colombo [Phys. Rev. B 81, 241412(R) (2010)] have suggested that combinations of shear and uniaxial strain can be used to open a band gap in graphene at much lower levels of strain than with the application of unaxial strain alone. They employed a unit cell of graphene in their studies and applied the Cauchy-Born rule to model external strain. Consequently, an important aspect of the mechanical behavior of membranes, namely buckling and wrinkling under external strain, and the attendant coupling with electronic structure was ignored in their analysis. Upon doing so, the apparent band gap that appears in the range of 15-20% shear strain under the Cauchy-Born assumption is shown to vanish. The gapless spectrum of graphene is found to persist under large shear strains as well as large combinations of shear and uniaxial strain.

cond-mat.mtrl-sci↗