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arXiv · 1611.03452

Protective Molecular Passivation of Black Phosphorous

Vlada Artel·Qiushi Guo·Hagai Cohen·Raymond Gasper·Ashwin Ramasubramaniam·Fengnian Xia·Doron Naveh
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Abstract

Black phosphorous (BP) is one of the most interesting layered materials, bearing promising potential for emerging electronic and optoelectronic device technologies. The crystalline structure of BP displays in-plane anisotropy in addition to the out-of-plane anisotropy characteristic to layered materials. Therefore, BP supports anisotropic optical and transport responses that can enable unique device architectures. Its thickness-dependent direct bandgap varies in the range of around 0.3-2.0 eV (from single-layer to bulk, respectively), making BP suitable to optoelectronics in a broad spectral range. With high room-temperature mobility, exceeding 1,000 cm2V-1s-1 in thin films, BP is also a very promising material for electronics. However, BP is sensitive to oxygen and humidity due to its three-fold coordinated atoms. The surface electron lone pairs are reactive and can lead to structural degradation upon exposure to air, leading to significant device performance degradation in ambient condition. Here, we report a viable solution to overcome degradation in few-layer BP by passivating the surface with self-assembled monolayers of octadecyltrichlorosilane (OTS) that provide long-term stability in ambient conditions. Importantly, we show that this treatment does not cause any undesired carrier doping of the bulk channel material, thanks to the emergent hierarchical interface structure. Our approach is compatible with conventional electronic materials processing technologies thus providing an immediate route toward practical applications in BP devices.

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Vlada Artel, Qiushi Guo, Hagai Cohen, Raymond Gasper, Ashwin Ramasubramaniam, Fengnian Xia, Doron Naveh. 2016-11-10. Protective Molecular Passivation of Black Phosphorous. https://arxiv.org/abs/1611.03452

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