arXiv subjects

Atsushi Fujimori

Publications and source records attributed to Atsushi Fujimori.

At least 55 records · Page 3Linked to original sources

arXiv2018

Systematic study of the electronic structure and the magnetic properties of a few-nm-thick epitaxial (Ni1-xCox)Fe2O4 (x = 0 - 1) layers grown on Al2O3(111)/Si(111) using soft X-ray magnetic circular dichroism: effects of cation distribution

We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling as a spin filter. We revealed the crystallographic (octahedral Oh or tetrahedral Td) sites and the valences of the Fe, Co, and Ni cations using experimental soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra and configuration-interaction cluster-model calculation. In all the (Ni1-xCox)Fe2O4 layers with d = about 4 nm, all Ni cations occupy the Ni2+ (Oh) site, whereas Co cations occupy the three different Co2+ (Oh), Co2+ (Td), and Co3+ (Oh) sites with constant occupancies. According to these features, the occupancy of the Fe3+ (Oh) cations decreases and that of the Fe3+ (Td) cations increases with decreasing x. Consequently, we obtained a systematic increase of y with decreasing x and achieved the highest y value of 0.91 for the NiFe2O4 layer with d = 3.5 nm. From the d dependences of y and magnetization in the d range of 1.7 - 5.2 nm, a magnetically dead layer is present near the NiFe2O4/Al2O3 interface, but its influence on the magnetization was significantly suppressed compared with the case of CoFe2O4 layers reported previously [Y. K. Wakabayasi et al., Phys. Rev. B 96, 104410 (2017)], due to the high site selectivity of the Ni cations. Since our epitaxial NiFe2O4 layer with d = 3.5 nm has a high y values (0.91) and a reasonably large magnetization (180 emu/cc), it is expected to exhibit a strong spin filter effect, which can be used for efficient spin injection into Si.

cond-mat.mtrl-sci↗

arXiv2018

Antiphase Fermi-surface modulations accompanying displacement excitation in a parent compound of iron-based superconductors

We investigate the transient electronic structure of BaFe2As2, a parent compound of iron-based superconductors, by time- and angle-resolved photoemission spectroscopy. In order to probe the entire Brillouin zone, we utilize extreme ultraviolet photons and observe photoemission intensity oscillation with the frequency of the A1g phonon which is antiphase between the zone-centered hole Fermi surfaces (FSs) and zone-cornered electron FSs. We attribute the antiphase behavior to the warping in one of the zone-centered hole FSs accompanying the displacement of the pnictogen height, and find that this displacement is the same direction as that induced by substitution of P for As, where superconductivity is induced by a structural modification without carrier doping in this system.

cond-mat.supr-con↗

arXiv2018

Electronic States and Possible Origin of the Orbital-Glass State in a Nearly Metallic Spinel Cobalt Vanadate: An X-ray Magnetic Circular Dichroism Study

We have investigated the orbital states of the orbital-glassy (short-range orbital ordered) spinel vanadate Co$_{1.21}$V$_{1.79}$O$_{4}$ using x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and subsequent configuration-interaction cluster-model calculation. From the sign of the XMCD spectra, it was found that the spin magnetic moment of the Co ion is aligned parallel to the applied magnetic field and that of the V ion anti-parallel to it, consistent with neutron scattering studies. It was revealed that the excess Co ions at the octahedral site take the trivalent low-spin state, and induce a random potential to the V sublattice. The orbital magnetic moment of the V ion is small although finite, suggesting that the ordered orbitals mainly consists of real-number orbitals.

cond-mat.str-el↗

arXiv2017

Effect(s) of Cobalt Substitution in $L1_{0}$-(Fe,Co)Pt Thin Films

We have studied the effect of cobalt substitution in $L1_{0}$-Fe$_{1-x}$Co$_{x}$Pt films by means of x-ray magnetic circular dichroism (XMCD) and first-principles calculations. The magnetic moments of Fe ($\sim$2.5 $μ_{\rm B}$) and Co ($\sim$1.5 $μ_{\rm B}$) deduced using XMCD were almost unchanged upon Co doping, and the net magnetization decreases with increasing Co content. Calculation also showed that the 3$d$ electrons that have been added by Co substitution occupy only spin-down bands.

cond-mat.mtrl-sci↗

arXiv2017

Electronic structures of UX$_3$ (X=Al, Ga, and In) studied by photoelectron spectroscopy

The electronic structures of UX$_3$ (X=Al, Ga, and In) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl$_3$ and UGa$_3$ were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band-structure calculations. The topologies of the Fermi surfaces and the band structures of UAl$_3$ and UGa$_3$ were explained reasonably well by the calculation, although bands near the Fermi level ($E_\mathrm{F}$) were renormalized owing to the finite electron correlation effect. The topologies of the Fermi surfaces of UAl$_3$ and UGa$_3$ are very similar to each other, except for some minor differences. Such minor differences in their Fermi surface or electron correlation effect might take an essential role in their different magnetic properties. No significant changes were observed between the ARPES spectra of UGa$_3$ in the paramagnetic and antiferromagnetic phases, suggesting that UGa$_3$ is an itinerant weak antiferromagnet. The effect of chemical pressure on the electronic structures of UX$_3$ compounds was also studied by utilizing the smaller lattice constants of UAl$_3$ and UGa$_3$ than that of UIn$_3$. The valence band spectrum of UIn$_3$ is accompanied by a satellite-like structure on the high-binding-energy side. The core-level spectrum of UIn$_3$ is also qualitatively different from those of UAl$_3$ and UGa$_3$. These findings suggest that the U~$5f$ states in UIn$_3$ are more localized than those in UAl$_3$ and UGa$_3$.

cond-mat.str-el↗

arXiv2017

Electronic structure of ThRu2Si2 studied by angle-resolved photoelectron spectroscopy: Elucidating the contribution of U 5f states in URu2Si2

The electronic structure of ThRu2Si2 was studied by angle-resolved photoelectron spectroscopy (ARPES) with incident photon energies of hn=655-745 eV. Detailed band structure and the three-dimensional shapes of Fermi surfaces were derived experimentally, and their characteristic features were mostly explained by means of band structure calculations based on the density functional theory. Comparison of the experimental ARPES spectra of ThRu2Si2 with those of URu2Si2 shows that they have considerably different spectral profiles particularly in the energy range of 1 eV from the Fermi level, suggesting that U 5f states are substantially hybridized in these bands. The relationship between the ARPES spectra of URu2Si2 and ThRu2Si2 is very different from the one between the ARPES spectra of CeRu2Si2 and LaRu2Si2, where the intrinsic difference in their spectra is limited only in the very vicinity of the Fermi energy. The present result suggests that the U 5f electrons in URu2Si2 have strong hybridization with ligand states and have an essentially itinerant character.

cond-mat.str-el↗

arXiv2017

Emergence of quantum critical behavior in metallic quantum-well states of strongly correlated oxides

Controlling quantum critical phenomena in strongly correlated electron systems, which emerge in the neighborhood of a quantum phase transition, is a major challenge in modern condensed matter physics. Quantum critical phenomena are generated from the delicate balance between long-range order and its quantum fluctuation. So far, the nature of quantum phase transitions has been investigated by changing a limited number of external parameters such as pressure and magnetic field. We propose a new approach for investigating quantum criticality by changing the strength of quantum fluctuation that is controlled by the dimensional crossover in metallic quantum well (QW) structures of strongly correlated oxides. With reducing layer thickness to the critical thickness of metal-insulator transition, crossover from a Fermi liquid to a non-Fermi liquid has clearly been observed in the metallic QW of SrVO$_3$ by \textit{in situ} angle-resolved photoemission spectroscopy. Non-Fermi liquid behavior with the critical exponent $α = 1$ is found to emerge in the two-dimensional limit of the metallic QW states, indicating that a quantum critical point exists in the neighborhood of the thickness-dependent Mott transition. These results suggest that artificial QW structures provide a unique platform for investigating novel quantum phenomena in strongly correlated oxides in a controllable fashion.

cond-mat.mtrl-sci↗

arXiv2017

Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe2O4/Al2O3/Si(111) films studied by X-ray magnetic circular dichroism

Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O4(111) layers with various thicknesses (thickness d = 1.4, 2.3, 4, and 11 nm) in the epitaxial CoFe2O4(111)/Al2O3(111)/Si(111) structures using soft X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) combined with cluster-model calculation. The magnetization of CoFe2O4 measured by XMCD gradually decreases with decreasing thickness d and finally a magnetically dead layer is clearly detected at d = 1.4 nm. The magnetically dead layer has frustration of magnetic interactions which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoFe2O4/Al2O3 interface originates from various complex networks of superexchange interactions through the change in the crystallographic and electronic structures. Furthermore, from comparison of the magnetic properties between d = 1.4 and 2.3 nm, it is found that ferrimagnetic order of the magnetically dead layer at d = 1.4 nm is restored by the additional growth of the 0.9-nm-thick CoFe2O4 layer on it.

cond-mat.mtrl-sci↗

arXiv2017

Thickness dependence and dimensionality effects of charge and magnetic orderings in La1/3Sr2/3FeO3 thin films

We investigate the thickness effects on charge and magnetic orderings in Fe perovskite oxide La1/3Sr2/3FeO3/SrTiO3 thin films by hard x-ray and resonant soft x-ray scattering (RSXS) with changing thin film thickness systematically. We found that the correlation lengths of the magnetic ordering along the in-plane and out-of-plane directions are comparable and proportional to the thickness, and shows stronger thickness dependence than those of charge orderg. %the thickness dependence of correlation length of charge ordering is smaller than that of magnetic orderings. The magnetic ordered states disappear when the correlation length of magnetic ordering decreases to that of charge ordering through the intrinsic thickness effects. Surface sensitive grazing-incident RSXS revealed that the orderings exist even in the surface region, which indicates that the observed orderings is not affected by surface effect like oxygen vacancies. Critical thickness is in 5-15 nm, which corresponds to 4-11 antiferromagnetic ordering period. This critical value seems to be common to other ferromagnetic oxide thin films.

cond-mat.str-el↗

arXiv2016

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that $E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that $E_\mathrm{F}$ is located above the VB maximum in the IB.

cond-mat.mtrl-sci↗

arXiv2016

Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films

GeMn granular thin films are a unique and promising material for spintronics applications due to large positive magnetoresistance (MR). Previous studies on GeMn have suggested that the large MR is related to nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagnetic matrix. However, its microscopic origin of the MR has not been clarified yet. Here, using X-ray magnetic circular dichroism (XMCD), which is extremely sensitive to the local magnetic state of each atom, we investigate the magnetic properties of the nanoparticles and the matrix in GeMn separately. We find that the MR ratio is proportional to the product of the magnetizations originating from the nanoparticles and the matrix. This result indicates that spin-polarized holes in the nanoparticles penetrate into the matrix and that these holes undergo spin-disorder magnetic scattering by the paramagnetic Mn atoms in the matrix, which induces the large MR.

cond-mat.mtrl-sci↗

arXiv2016

Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy

Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurements in order to elucidate the mechanism of the ferromagnetism. We observed finite Fe 3$d$ components in the states at the Fermi level ($E_{F}$) in a wide region in momentum space and $E_{F}$ was located above the valence-band maximum (VBM). First-principles supercell calculation also suggested that the $E_{F}$ is located above the VBM, within the narrow spin-down $d$($e$) band and within the spin-up impurity band of the deep acceptor-level origin derived from the strong $p$-$d$($t_{2}$) hybridization. We conclude that the narrow $d$($e$) band is responsible for the ferromagnetic coupling between Fe atoms while the acceptor-level-originated band is responsible for the transport properties of Ge:Fe.

cond-mat.mtrl-sci↗

arXiv2016

Volume-wise destruction of the antiferromagnetic Mott insulating state through quantum tuning

Metal-to-insulator transitions (MITs) are a dramatic manifestation of strong electron correlations in solids1. The insulating phase can often be suppressed by quantum tuning, i.e. varying a nonthermal parameter such as chemical composi- tion or pressure, resulting in a zero-temperature quantum phase transition (QPT) to a metallic state driven by quantum fluctuations, in contrast to conventional phase transitions driven by thermal fluctuations. Theories of exotic phenomena known to occur near the Mott QPT such as quantum criticality and high-temperature superconductivity often assume a second-order QPT, but direct experimental evidence for either first- or second-order behavior at the magnetic QPT associated with the Mott transition has been scarce and further masked by the superconducting phase in unconventional superconductors. Most measurements of QPTs have been performed by volume-integrated probes, such as neutron scattering, magnetization, and transport, in which discontinuous behavior, phase separation, and spatially inhomogeneous responses are averaged and smeared out, leading at times to misidentification as continuous second-order transitions. Here, we demonstrate through muon spin relaxation/rotation (MuSR) experiments on two archetypal Mott insulating systems, composition-tuned RENiO3 (RE=rare earth element) and pressured-tuned V2O3, that the QPT from antiferromagnetic insulator to paramagnetic metal is first-order: the magnetically ordered volume fraction decreases to zero at the QPT, resulting in a broad region of intrinsic phase separation, while the ordered magnetic moment retains its full value across the phase diagram until it is suddenly destroyed at the QPT. These findings call for further investigation into the role of inelastic soft modes and the nature of dynamic spin and charge fluctuations underlying the transition.

cond-mat.str-el↗

arXiv2015

Origin of the anomalous mass renormalization in metallic quantum well states of correlated oxide SrVO$_3$

$In$ $situ$ angle-resolved photoemission spectroscopy (ARPES) has been performed on SrVO$_3$ ultrathin films, which show metallic quantum well (QW) states, to unveil the origin of the anomalous mass enhancement in the QW subbands. The line-shape analysis of the ARPES spectra reveals that the strength of the electron correlation increases as the subband bottom energy approaches the Fermi level. These results indicate that the anomalous subband-dependent mass enhancement mainly arises from the quasi-one-dimensional character of confined V $3d$ states as a result of their orbital-selective quantization.

cond-mat.mtrl-sci↗

arXiv2015

Electronic structures of ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ studied by angle-resolved photoelectron spectroscopy

The electronic structures of the ferromagnetic superconductors $\mathrm{UGe}_2$ and $\mathrm{UCoGe}$ in the paramagnetic phase were studied by angle-resolved photoelectron spectroscopy using soft X-rays ($hν=400-500$). The quasi-particle bands with large contributions from $\mathrm{U}~5f$ states were observed in the vicinity of $E_\mathrm{F}$, suggesting that the $\mathrm{U}~5f$ electrons of these compounds have an itinerant character. Their overall band structures were explained by the band-structure calculations treating all the $\mathrm{U}~5f$ electrons as being itinerant. Meanwhile, the states in the vicinity of $E_\mathrm{F}$ show considerable deviations from the results of band-structure calculations, suggesting that the shapes of Fermi surface of these compounds are qualitatively different from the calculations, possibly caused by electron correlation effect in the complicated band structures of the low-symmetry crystals. Strong hybridization between $\mathrm{U}~5f$ and $\mathrm{Co}~3d$ states in $\mathrm{UCoGe}$ were found by the $\mathrm{Co}~2p-3d$ resonant photoemission experiment, suggesting that $\mathrm{Co}~3d$ states have finite contributions to the magnetic, transport, and superconducting properties.

cond-mat.str-el↗

arXiv2015

Magnetization Process of the n-type Ferromagnetic Semiconductor (In,Fe)As:Be Studied by X-ray Magnetic Circular Dichroism

In order to investigate the mechanism of ferromagnetic ordering in the new n-type magnetic semiconductor (In,Fe)As co-doped with Be, we have performed X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of ferromagnetic and paramagnetic samples. The spectral line shapes suggest that the ferromagnetism is intrinsic originating from Fe atoms incorporated into the Zinc-blende-type InAs lattice. The magnetization curves of Fe measured by XMCD were well reproduced by the superposition of a Langevin function representing superparamagnetic (SPM) behavior of nano-scale ferromagnetic domains and a T-linear function representing Curie-Weiss paramagnetism even much above the Curie temperatures. The data at 20 K showed a deviation from the Langevin behavior, suggesting a gradual establishment of macroscopic ferromagnetism on lowering temperature. The existence of nano-scale ferromagnetic domains indicated by the SPM behavior suggests spatial fluctuations of Fe concentration on the nano-scale.

cond-mat.mtrl-sci↗

arXiv2015

Isotropic Kink and Quasiparticle Excitations in the Three-Dimensional Perovskite Manganite La$_{0.6}$Sr$_{0.4}$MnO$_3$

In order to reveal many-body interactions in the three-dimensional (3D) perovskite manganite, we have performed an $in$ $situ$ angle-resolved photoemission spectroscopy (ARPES) on La$_{0.6}$Sr$_{0.4}$MnO$_3$ (LSMO) and investigated the behaviors of quasiparticles. We observe quasiparticle peaks around the Fermi momentum, both in the electron and the hole bands, and clear kinks throughout the hole Fermi surface in the ARPES band dispersion. The isotropic behavior sharply contrasts to the strong anisotropic quasiparticle excitation observed in layered manganites. These results suggest that polaronic quasiparticles by coupling of the electrons with Jahn-Teller phonons play an important role in the physical properties of the ferromagnetic metallic phase in 3D manganite LSMO.

cond-mat.str-el↗

arXiv2015

Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe

We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local ferromagnetic domains, which are formed through ferromagnetic exchange interactions in the high Fe content regions of the GeFe films, exist at room temperature, well above the Curie temperature. We demonstrate the first observation of the intriguing nanoscale domain growth process in which ferromagnetic domains expand as the temperature decreases, followed by a transition of the entire film into a ferromagnetic state at the Curie temperature.

cond-mat.mtrl-sci↗