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arXiv · 1502.00118

Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe

Yuki K. Wakabayashi·Shoya Sakamoto·Yukiharu Takeda·Keisuke Ishigami·Yukio Takahashi·Yuji Saitoh·Hiroshi Yamagami·Atsushi Fujimori·Masaaki Tanaka·Shinobu Ohya
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Abstract

We investigate the local electronic structure and magnetic properties of the group IV based ferromagnetic semiconductor, GeFe, using soft X ray magnetic circular dichroism. Our results show that the doped Fe 3d electrons are strongly hybridized with the Ge 4p states, and have an unusually large orbital magnetic moment relative to the spin magnetic moment; i.e., morb/mspin = 0.3. We find that local ferromagnetic domains, which are formed through ferromagnetic exchange interactions in the high Fe content regions of the GeFe films, exist at room temperature, well above the Curie temperature. We demonstrate the first observation of the intriguing nanoscale domain growth process in which ferromagnetic domains expand as the temperature decreases, followed by a transition of the entire film into a ferromagnetic state at the Curie temperature.

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Yuki K. Wakabayashi, Shoya Sakamoto, Yukiharu Takeda, Keisuke Ishigami, Yukio Takahashi, Yuji Saitoh, Hiroshi Yamagami, Atsushi Fujimori, Masaaki Tanaka, Shinobu Ohya. 2015-01-31. Room temperature local ferromagnetism and nanoscale domain growth in the ferromagnetic semiconductor GeFe. https://doi.org/10.1038/srep23295

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