arXiv subjects

Austin J. Minnich

Publications and source records attributed to Austin J. Minnich.

At least 37 records · Page 2Linked to original sources

arXiv2022

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF$_6$ plasma and Al(CH$_3$)$_3$

We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF$_6$ plasma and trimethylaluminum (Al(CH$_3$)$_3$, TMA). ALE was observed at temperatures greater than 200 $^\circ$C, with a maximum etch rate of 1.9 Å/cycle observed at 300 $^\circ$C as measured using ex-situ ellipsometry. After ALE, the etched surface was found to contain a lower concentration of oxygen compared to the original surface and exhibited a $\sim 35$% decrease in surface roughness. These findings have relevance for applications of AlN in nonlinear photonics and wide bandgap semiconductor devices.

cond-mat.mes-hall↗

arXiv2022

Self-heating of cryogenic high-electron-mobility transistor amplifiers and the limits of microwave noise performance

The fundamental limits of the microwave noise performance of high electron mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy and quantum computing. Self-heating at cryogenic temperatures has been reported to be a limiting mechanism for the noise, but cryogenic cooling strategies to mitigate it, for instance using liquid cryogens, have not been evaluated. Here, we report microwave noise measurements of a packaged two-stage HEMT amplifier immersed in normal and superfluid $^4$He baths and in vacuum from 1.6 - 80 K. We find that these liquid cryogens are unable to mitigate the thermal noise associated with self-heating. Considering this finding, we examine the implications for the lower bounds of cryogenic noise performance in HEMTs. Our analysis supports the general design principle for cryogenic HEMTs of maximizing gain at the lowest possible power.

physics.ins-det↗

arXiv2022

Two-phonon scattering in non-polar semiconductors: a first-principles study of warm electron transport in Si

The ab-initio theory of charge transport in semiconductors typically employs the lowest-order perturbation theory in which electrons interact with one phonon (1ph). This theory is accepted to be adequate to explain the low-field mobility of non-polar semiconductors but has not been tested extensively beyond the low-field regime. Here, we report first-principles calculations of the electric field-dependence of the electron mobility of Si as described by the warm electron coefficient, $β$. Although the 1ph theory overestimates the low-field mobility by only around 20%, it overestimates $β$ by over a factor of two over a range of temperatures and crystallographic axes. We show that the discrepancy in $β$ is reconciled by inclusion of on-shell iterated 2-phonon (2ph) scattering processes, indicating that scattering from higher-order electron-phonon interactions is non-negligible even in non-polar semiconductors. Further, a ~20% underestimate of the low-field mobility with 2ph scattering suggests that non-trivial cancellations may occur in the perturbative expansion of the electron-phonon interaction.

cond-mat.mtrl-sci↗

arXiv2022

High-field transport and hot electron noise in GaAs from first principles: role of two-phonon scattering

High-field charge transport in semiconductors is of fundamental interest and practical importance. While the \textit{ab initio} treatment of low-field transport is well-developed, the treatment of high-field transport is much less so, particularly for multi-phonon processes that are reported to be relevant in GaAs. Here, we report a calculation of the high-field transport properties and current power spectral density (PSD) of hot electrons in GaAs from first principles including on-shell two-phonon (2ph) scattering. The on-shell 2ph scattering rates are found to qualitatively alter the high-field distribution function by increasing both the momentum and energy relaxation rates as well as contributing markedly to intervalley scattering. This finding reconciles a long-standing discrepancy regarding the strength of intervalley scattering in GaAs as inferred from transport and optical studies. The characteristic non-monotonic trend of PSD with electric field is not predicted at this level of theory. Our work shows how \textit{ab initio} calculations of high-field transport and noise may be used as a stringent test of the electron-phonon interaction in semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Experimental Realization of a Measurement-Induced Entanglement Phase Transition on a Superconducting Quantum Processor

Ergodic quantum many-body systems undergoing unitary dynamics evolve towards increasingly entangled states characterized by an extensive scaling of entanglement entropy with system volume. At the other extreme, quantum systems repeatedly measured may be stabilized in a measurement eigenstate, a phenomenon known as the quantum Zeno effect. Recently, the intermediate regime in which unitary evolution is interspersed with quantum measurements has become of interest. Numerical studies have reported the existence of distinct phases characterized by volume- and area-law entanglement entropy scaling for infrequent and frequent measurement rates, respectively, separated by a critical measurement rate. The experimental investigation of these dynamic quantum phases of matter on near-term quantum hardware is challenging due to the need for repeated high-fidelity mid-circuit measurements and fine control over the evolving unitaries. Here, we report the realization of a measurement-induced entanglement transition on superconducting quantum processors with mid-circuit readout capability. We directly observe extensive and sub-extensive scaling of entanglement entropy in the volume- and area-law phases, respectively, by varying the rate of projective measurements. We further demonstrate phenomenological critical behavior of the transition by performing a data collapse for different system sizes. Our work paves the way for the use of mid-circuit measurement as an effective resource for quantum simulation on near-term quantum computers, for instance by facilitating the study of dynamic and long-range entangled quantum phases.

quant-ph↗

arXiv2022

Simulating challenging correlated molecules and materials on the Sycamore quantum processor

Simulating complex molecules and materials is an anticipated application of quantum devices. With strong quantum advantage demonstrated in artificial tasks, we examine how such advantage translates into modeling physical problems of correlated electronic structure. We simulate static and dynamical electronic structure on a superconducting quantum processor derived from Google's Sycamore architecture for two representative correlated electron problems: the nitrogenase iron-sulfur molecular clusters, and $α$-ruthenium trichloride, a proximate spin-liquid material. To do so, we simplify the electronic structure into low-energy spin models that fit on the device. With extensive error mitigation and assistance from classically simulated data, we achieve quantitatively meaningful results deploying about 1/5 of the gate resources used in artificial quantum advantage experiments on a similar architecture. This increases to over 1/2 of the gate resources when choosing a model that suits the hardware. Our work serves to convert artificial measures of quantum advantage into a physically relevant setting.

quant-ph↗

arXiv2021

Realizing symmetry-protected topological phases in a spin-1/2 chain with next-nearest neighbor hopping on superconducting qubits

The realization of novel phases of matter on quantum simulators is a topic of intense interest. Digital quantum computers offer a route to prepare topological phases with interactions that do not naturally arise in analog quantum simulators. Here, we report the realization of symmetry-protected topological (SPT) phases of a spin-{1/2} Hamiltonian with next-nearest-neighbor hopping on up to 11 qubits on a programmable superconducting quantum processor. We observe clear signatures of the two distinct SPT phases, such as excitations localized to specific edges and finite string order parameters. Our work advances ongoing efforts to realize novel states of matter with exotic interactions on digital near-term quantum computers.

quant-ph↗

arXiv2021

Origin of high thermal conductivity in disentangled ultra-high molecular weight polyethylene films: ballistic phonons within enlarged crystals

The thermal transport properties of oriented polymers are of fundamental and practical interest. High thermal conductivities ($\gtrsim 50$ Wm$^{-1}$K$^{-1}$) have recently been reported in disentangled ultra-high molecular weight polyethylene (UHMWPE) films, considerably exceeding prior reported values for oriented films. However, conflicting explanations have been proposed for the microscopic origin of the high thermal conductivity. Here, we report a characterization of the thermal conductivity and mean free path accumulation function of disentangled UHMWPE films (draw ratio $\sim 200$) using cryogenic steady-state thermal conductivity measurements and transient grating spectroscopy. We observe a marked dependence of the thermal conductivity on grating period over temperatures from 30 - 300 K. Considering this observation, cryogenic bulk thermal conductivity measurements, and analysis using an anisotropic Debye model, we conclude that longitudinal atomic vibrations with mean free paths around 400 nanometers are the primary heat carriers and that the high thermal conductivity for draw ratio $\gtrsim 150$ arises from the enlargement of extended crystals with drawing. The mean free paths appear to remain limited by the extended crystal dimensions, suggesting that the upper limit of thermal conductivity of disentangled UHMWPE films has not yet been realized.

cond-mat.mtrl-sci↗

arXiv2021

Digital quantum simulation of open quantum systems using quantum imaginary time evolution

Quantum simulation on emerging quantum hardware is a topic of intense interest. While many studies focus on computing ground state properties or simulating unitary dynamics of closed systems, open quantum systems are an interesting target of study owing to their ubiquity and rich physical behavior. However, their non-unitary dynamics are also not natural to simulate on digital quantum devices. Here, we report algorithms for the digital quantum simulation of the dynamics of open quantum systems governed by a Lindblad equation using adaptations of the quantum imaginary time evolution (QITE) algorithm. We demonstrate the algorithms on IBM Quantum's hardware with simulations of the spontaneous emission of a two level system and the dissipative transverse field Ising model. Our work advances efforts to simulate the dynamics of open quantum systems on quantum hardware.

quant-ph↗

arXiv2021

Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation

Silicon-germanium heterojunction bipolar transistors (HBTs) are of interest as low-noise microwave amplifiers due to their competitive noise performance and low cost relative to III-V devices. The fundamental noise performance limits of HBTs are thus of interest, and several studies report that quasiballistic electron transport across the base is a mechanism leading to cryogenic non-ideal IV characteristics that affects these limits. However, this conclusion has not been rigorously tested against theoretical predictions because prior studies modeled electron transport with empirical approaches or approximate solutions of the Boltzmann equation. Here, we study non-diffusive transport in narrow-base SiGe HBTs using an exact, semi-analytic solution of the Boltzmann equation based on an asymptotic expansion approach. We find that the computed transport characteristics are inconsistent with experiment, implying that quasiballistic electron transport is unlikely to be the origin of cryogenic non-ideal IV characteristics. Our work helps to identify the mechanisms governing the lower limits of the microwave noise figure of cryogenic HBT amplifiers.

cond-mat.mes-hall↗

arXiv2021

Theory of drain noise in high electron mobility transistors based on real-space transfer

High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the origin of the gate noise, that of drain noise is a topic of debate. Here, we report a theory of drain noise as a type of partition noise arising from real-space transfer of hot electrons from the channel to the barrier. The theory accounts for the magnitude and dependencies of the drain temperature and suggests strategies to realize devices with lower noise figure.

cond-mat.mes-hall↗

arXiv2021

Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry

Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the microwave noise figure are therefore of practical interest. In particular, the contribution of thermal noise from the gate at cryogenic temperatures remains unclear owing to a lack of experimental measurements of thermal resistance under these conditions. Here, we report measurements of gate junction temperature and thermal resistance in a HEMT at cryogenic and room temperatures using a Schottky thermometry method. At temperatures $\sim 20$ K, we observe a nonlinear trend of thermal resistance versus power that is consistent with heat dissipation by phonon radiation. Based on this finding, we consider heat transport by phonon radiation at the low-noise bias and liquid helium temperatures and estimate that the thermal noise from the gate is several times larger than previously assumed owing to self-heating. We conclude that without improvements in thermal management, self-heating results in a practical lower limit for microwave noise figure of HEMTs at cryogenic temperatures.

cond-mat.mes-hall↗

arXiv2021

Origin of micron-scale propagation lengths of heat-carrying acoustic excitations in amorphous silicon

The heat-carrying acoustic excitations of amorphous silicon are of interest because their mean free paths may approach micron scales at room temperature. Despite extensive investigation, the origin of the weak acoustic damping in the heat-carrying frequencies remains a topic of debate. Here, we report measurements of the thermal conductivity mean free path accumulation function in amorphous silicon thin films from 60 - 315 K using transient grating spectroscopy. With additional picosecond acoustics measurements and considering the known frequency-dependencies of damping mechanisms in glasses, we reconstruct the mean free paths from $\sim 0.1-3$ THz. The mean free paths are independent of temperature and exhibit a Rayleigh scattering trend over most of this frequency range. The observed trend is inconsistent with the predictions of numerical studies based on normal mode analysis but agrees with diverse measurements on other glasses. The micron-scale MFPs in amorphous Si arise from the absence of anharmonic or two-level system damping in the sub-THz frequencies, leading to heat-carrying acoustic excitations with room-temperature damping comparable to that of other glasses at cryogenic temperatures.

cond-mat.mtrl-sci↗

arXiv2021

Electronic noise of warm electrons in semiconductors from first-principles

The ab-initio theory of low-field electronic transport properties such as carrier mobility in semiconductors is well-established. However, an equivalent treatment of electronic fluctuations about a non-equilibrium steady state, which are readily probed experimentally, remains less explored. Here, we report a first-principles theory of electronic noise for warm electrons in semiconductors. In contrast with typical numerical methods used for electronic noise, no adjustable parameters are required in the present formalism, with the electronic band structure and scattering rates calculated from first-principles. We demonstrate the utility of our approach by applying it to GaAs and show that spectral features in AC transport properties and noise originate from the disparate time scales of momentum and energy relaxation, despite the dominance of optical phonon scattering. Our formalism enables a parameter-free approach to probe the microscopic transport processes that give rise to electronic noise in semiconductors.

cond-mat.mtrl-sci↗

arXiv2020

A coupled cluster framework for electrons and phonons

We describe a coupled cluster framework for coupled systems of electrons and phonons. Neutral and charged excitations are accessed via the equation-of-motion version of the theory. Benchmarks on the Hubbard-Holstein model allow us to assess the strengths and weaknesses of different coupled cluster approximations which generally perform well for weak to moderate coupling. Finally, we report progress towards an implementation for {\it ab initio} calculations on solids, and present some preliminary results on finite-size models of diamond. We also report the implementation of electron-phonon coupling matrix elements from crystalline Gaussian type orbitals (cGTO) within the PySCF program package.

cond-mat.mtrl-sci↗

arXiv2020

Quantum Computation of Finite-Temperature Static and Dynamical Properties of Spin Systems Using Quantum Imaginary Time Evolution

Developing scalable quantum algorithms to study finite-temperature physics of quantum many-body systems has attracted considerable interest due to recent advancements in quantum hardware. However, such algorithms in their present form require resources that exceed the capabilities of current quantum computers except for a limited range of system sizes and observables. Here, we report calculations of finite-temperature properties including energies, static and dynamical correlation functions, and excitation spectra of spin Hamiltonians with up to four sites on five-qubit IBM Quantum devices. These calculations are performed using the quantum imaginary time evolution (QITE) algorithm and made possible by several algorithmic improvements, including a method to exploit symmetries that reduces the quantum resources required by QITE, circuit optimization procedures to reduce circuit depth, and error mitigation techniques to improve the quality of raw hardware data. Our work demonstrates that the ansatz-independent QITE algorithm is capable of computing diverse finite-temperature observables on near-term quantum devices.

quant-ph↗

arXiv2020

Determining eigenstates and thermal states on a quantum computer using quantum imaginary time evolution

The accurate computation of Hamiltonian ground, excited, and thermal states on quantum computers stands to impact many problems in the physical and computer sciences, from quantum simulation to machine learning. Given the challenges posed in constructing large-scale quantum computers, these tasks should be carried out in a resource-efficient way. In this regard, existing techniques based on phase estimation or variational algorithms display potential disadvantages; phase estimation requires deep circuits with ancillae, that are hard to execute reliably without error correction, while variational algorithms, while flexible with respect to circuit depth, entail additional high-dimensional classical optimization. Here, we introduce the quantum imaginary time evolution and quantum Lanczos algorithms, which are analogues of classical algorithms for finding ground and excited states. Compared to their classical counterparts, they require exponentially less space and time per iteration, and can be implemented without deep circuits and ancillae, or high-dimensional optimization. We furthermore discuss quantum imaginary time evolution as a subroutine to generate Gibbs averages through an analog of minimally entangled typical thermal states. Finally, we demonstrate the potential of these algorithms via an implementation using exact classical emulation as well as through prototype circuits on the Rigetti quantum virtual machine and Aspen-1 quantum processing unit.

quant-ph↗

arXiv2019

Electronic structure of bulk manganese oxide and nickel oxide from coupled cluster theory

We describe the ground- and excited-state electronic structure of bulk MnO and NiO, two prototypical correlated electron materials, using coupled cluster theory with single and double excitations (CCSD). As a corollary, this work also reports the first implementation of unrestricted periodic ab initio equation-of motion CCSD. Starting from a Hartree-Fock reference, we find fundamental gaps of 3.46 eV and 4.83 eV for MnO and NiO respectively for the 16 unit supercell, slightly overestimated compared to experiment, although finite-size scaling suggests that the gap is more severely overestimated in the thermodynamic limit. From the character of the correlated electronic bands we find both MnO and NiO to lie in the intermediate Mott/charge-transfer insulator regime, although NiO appears as a charge transfer insulator when only the fundamental gap is considered. While the lowest quasiparticle excitations are of metal 3d and O 2p character in most of the Brillouin zone, near the Γ point, the lowest conduction band quasiparticles are of s character. Our study supports the potential of coupled cluster theory to provide high level many-body insights into correlated solids.

cond-mat.mtrl-sci↗