arXiv subjects

B. Batlogg

Publications and source records attributed to B. Batlogg.

At least 37 records · Page 2Linked to original sources

arXiv2008

Spin fluctuations, magnetic long-range order and Fermi surface gapping in NaxCoO2

In this study an extended low energy phase diagram for NaxCoO2 is experimentally established with emphasis on the high x range. It is based on systematic heat capacity studies on both polycrystalline and single crystalline samples and on uSR measurements. Main features are the existence of mass enhancement, spin fluctuations without long-range order, and magnetic order with associated Fermi surface gapping. The latter is seen in the electronic density of states (DOS) and suppression of nuclear specific heat. While there is agreement between the band structure and the low energy DOS in the low x range, in the high x range (x > 0.6) the thermodynamically determined DOS is approximately three times that deduced from the angle-resolved photoemission spectroscopy (ARPES)-measured band dispersion or local-density approximation (LDA) calculations.

cond-mat.str-el↗

arXiv2007

Direct link between low temperature magnetism and high temperature sodium order in NaxCoO2

We prove the direct link between low temperature magnetism and high temperature sodium ordering in NaxCoO2 using the example of a heretofore unreported magnetic transition at 8 K which involves a weak ferromagnetic moment. The 8 K feature is characterized in detail and its dependence on a diffusive sodium rearrangement around 200 K is demonstrated. Applying muons as local probes this process is shown to result in a reversible phase separation into distinct magnetic phases that can be controlled by specific cooling protocols. Thus the impact of ordered sodium Coulomb potential on the CoO2 physics is evidenced opening new ways to experimentally revisit the NaxCoO2 phase diagram.

cond-mat.str-el↗

arXiv2007

High charge-carrier mobility and low trap density in a rubrene derivative

We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications are observed: one (A) distinct from that of rubrene with larger spacings between the naphtacene backbones, the other (B) with a in-plane structure presumably very similar compared to rubrene. The electric transport properties reflect the different structures: in the latter phase (B) the in-plane hole mobility of 12 cm$^2$/Vs measured on single crystal FETs is just as high as in rubrene crystals, while in the A phase no field-effect could be measured. The high crystal quality, studied in detail for B, reflects itself in the density of gap states: The deep-level trap density as low as $10^{15}$ cm$^{-3}$ eV$^{-1}$ has been measured, and an exponential band tail with a characteristic energy of 22 meV is observed. The bulk mobility perpendicular to the molecular planes is estimated to be of order of $10^{-3}$ -- $10^{-1}$ cm$^2$/Vs.

cond-mat.mtrl-sci↗

arXiv2007

Large Negative Thermal Expansion in Pentacene due to Steric Hindrance

The uniaxial negative thermal expansion in pentacene crystals along $a$ is a particularity in the series of the oligoacenes, and exeptionally large for a crystalline solid. Full x-ray structure analysis from 120 K to 413 K reveals that the dominant thermal motion is a libration of the rigid molecules about their long axes, modifying the intermolecular angle which describes the herringbone packing within the layers. This herringbone angle increases with temperature (by 0.3 -- 0.6$^{\circ}$ per 100 K), and causes an anisotropic rearrangement of the molecules within the layers, i.e. an expansion in the $b$ direction, and a distinct contraction along $a$. Additionally, a larger herringbone angle improves the cofacial overlap between adjacent, parallel molecules, and thus enhances the attractive van der Waals forces.

cond-mat.mtrl-sci↗

arXiv2007

Density of bulk trap states in organic semiconductor crystals: discrete levels induced by oxygen in rubrene

The density of trap states in the bandgap of semiconducting organic single crystals has been measured quantitatively and with high energy resolution by means of the experimental method of temperature-dependent space-charge-limited-current spectroscopy (TD-SCLC). This spectroscopy has been applied to study bulk rubrene single crystals, which are shown by this technique to be of high chemical and structural quality. A density of deep trap states as low as ~ 10^{15} cm^{-3} is measured in the purest crystals, and the exponentially varying shallow trap density near the band edge could be identified (1 decade in the density of states per ~25 meV). Furthermore, we have induced and spectroscopically identified an oxygen related sharp hole bulk trap state at 0.27 eV above the valence band.

cond-mat.mtrl-sci↗

arXiv2007

MgB2 single crystals substituted with Li and with Li-C: Structural and superconducting properties

The effect of Li substitution for Mg and of Li-C co-substitution on the superconducting properties and crystal structure of MgB2 single crystals has been investigated. It has been found that hole doping with Li decreases the superconducting transition temperature Tc, but at a slower rate than electron doping with C or Al. Tc of MgB2 crystals with simultaneously substituted Li for Mg and C for B decreases more than in the case where C is substituted alone. This means that holes introduced by Li cannot counterbalance the effect of decrease of Tc caused by introduction of electrons coming from C. The possible reason of it can be that holes coming from Li occupy the pi band while electrons coming from C fill the sigma band. The temperature dependences of the upper critical field Hc2 for Al and Li substituted crystals with the same Tc show a similar dHc2/dT slope at Tc and a similar Hc2(T) behavior, despite of much different substitution level. This indicates that the mechanism controlling Hc2 and Tc is similar in both hole and electron doped crystals. Electrical transport measurements show an increase of resistivity both in Li substituted crystals and in Li and C co-substituted crystals. This indicates enhanced scattering due to defects introduced by substitutions including distortion of the lattice. The observed behavior can be explained as a result of two effects, influencing both Tc and Hc2. The first one is doping related to the changes in the carrier concentration, which may lead to the decrease or to the increase of Tc. The second one is related to the introduction of new scattering centers leading to the modification of the interband and/or intraband scattering and therefore, to changes in the superconducting gaps and to the reduction of Tc.

cond-mat.supr-con↗

arXiv2006

Mass enhancement, correlations, and strong coupling superconductivity in the beta-pyrochlore KOs2O6

To assess electron correlation and electron-phonon coupling in the recently discovered beta-pyrochlores KOs2O6 and RbOs2O6, we have performed specific heat measurements in magnetic fields up to 14 T. We present data from high quality single crystalline KOs2O6, showing that KOs2O6 is a strong coupling superconductor with a coupling parameter lambda_ep \approx 1.0 to 1.6 (RbOs2O6: lambda_ep \approx 1). The estimated Sommerfeld coefficient of KOs2O6, gamma=76 to 110 mJ/(mol K^2), is twice that of RbOs2O6 [gamma=44 mJ/(mol K^2)]. Using strong-coupling corrections, we extract useful thermodynamic parameters of KOs2O6. Quantifying lambda_ep allows us to determine the mass enhancement over the calculated band electronic density of states. A significant contribution in addition to the electron-phonon term of lambda_c=1.7 to 4.3 is deduced. In an effort to understand the origin of the enhancement mechanism, we also investigate an unusual energetically low-lying phonon. There are three phonon modes per RbOs2O6, suggestive of the phonon source being the rattling motion of the alkali ion. This dynamic instability of the alkali ions causes large scattering of the charge carriers which shows up in an unusual temperature dependence of the electrical resistivity.

cond-mat.supr-con↗

arXiv2006

Large mass enhancement in RbOs2O6

Heat capacity measurements on the recently discovered geometrically frustrated beta-pyrochlore superconductor RbOs2O6 (Tc=6.4 K) yield a Sommerfeld coefficient of 44 mJ/(molf.u. K^2). This is about 4 times larger than the one found in band structure calculations. In order to specify the enhancement due to electron-electron interactions, we have measured the electron-phonon enhancement. By a suitable analysis, an electron-phonon coupling constant lambda_ep = 1 +/- 0.1 is derived from the specific heat jump at Tc. This leaves a significant additional lambda_add = 2.1 +/- 0.3 for enhancement due to other mechanisms, possibly related to the triangular lattice. To arrive at these results, an appropriate analysis method for bulk thermodynamic data based on the condensation energy was applied.

cond-mat.supr-con↗

arXiv2006

NaxCoO2: Enhanced low-energy excitations of electrons on a 2D triangular lattice

To elucidate the low-energy excitation spectrum of correlated electrons on a 2D triangular lattice, we have studied the electrical resistance and specific heat down to 0.5 K and in magnetic fields up to 14 T, in NaxCoO2 samples with a Na content ranging from x \approx 0.5 to 0.82. Two distinct regimes are observed: for x from about 0.6 to x \approx 0.75 the specific heat is strongly enhanced, with a pronounced upturn of C/T below about 10 K, reaching 47 mJ/(mol K^2). This enhancement is suppressed in a magnetic field indicative of strong low-energy spin fluctuations. At higher Na content the fluctuations are reduced and mu-SR data confirm the SDW ground state below 22 K and the much reduced heat capacity is field independent.

cond-mat.str-el↗

arXiv2005

Evidence of Water-related Discrete Trap State Formation in Pentacene Single Crystal Field-Effect Transistors

We report on the generation of a discrete trap state during negative gate bias stress in pentacene single crystal "flip-crystal" field-effect transistors with a SiO2 gate dielectric. Trap densities of up to 2*10^12 cm^-2 were created in the experiments. Trap formation and trap relaxation are distinctly different above and below ~280 K. In devices in which a self-assembled monolayer on top of the SiO2 provides a hydrophobic insulator surface we do not observe trap formation. These results indicate the microscopic cause of the trap state to be water adsorbed on the SiO2 surface.

cond-mat.soft↗

arXiv2005

Strong magnetic pair breaking in Mn substituted MgB_2 single crystals

Magnetic ions (Mn) were substituted in MgB_2 single crystals resulting in a strong pair-breaking effect. The superconducting transition temperature, T_c, in Mg_{1-x}Mn_xB_2 has been found to be rapidly suppressed at an initial rate of 10 K/%Mn, leading to a complete suppression of superconductivity at about 2% Mn substitution. This reflects the strong coupling between the conduction electrons and the 3d local moments, predominantly of magnetic character, since the nonmagnetic ion substitutions, e.g. with Al or C, suppress T_c much less effectively (e.g. 0.5 K/%Al). The magnitude of the magnetic moment, derived from normal state susceptibility measurements, uniquely identifies the Mn ions to be divalent, and to be in the low-spin state (S = 1/2). This has been found also in X-ray absorption spectroscopy measurements. Isovalent Mn^{2+} substitution for Mg^{2+} mainly affects superconductivity through spin-flip scattering reducing T_c rapidly and lowering the upper critical field anisotropy H_{c2}^{ab}/H_{c2}^c at T = 0 from 6 to 3.3 (x = 0.88% Mn), while leaving the initial slope dH_{c2}/dT near T_c unchanged for both field orientations.

cond-mat.supr-con↗

arXiv2005

Intrinsic thermodynamic properties of the pyrochlore superconductor RbOs2O6 extracted by condensation energy analysis

We develop a general procedure for the analysis of bulk thermodynamic data of a superconductor for samples containing a metallic non-superconducting second phase. The method is based on the condensation energy and it allows the extraction of the intrinsic properties of a superconductor even for non-ideal samples. Applying this procedure to the recently discovered geometrically frustrated beta-pyrochlore superconductor RbOs2O6 (Tc = 6.4 K) yields a Sommerfeld coefficient as high as 79 mu J/g/K^2 (44 mJ/mol_f.u./K^2). RbOs2O6 is inferred to be a strong type-II superconductor (kappa(Tc) = 23) in the intermediate-coupling regime similar to niobium (lambda_ep \approx 1). From the upper critical field mu_0 H_c2 \approx 6 T at 0 K, we estimate a Ginzburg-Landau coherence length xi \approx 74 AA. The condensation energy is 860 mu J/g (483 mJ/mol_f.u.) resulting in 1/(8 pi) (gamma_1 Tc^2)/DeltaU_1 \approx 0.15, a value well in the range of conventional phonon-mediated superconductors. The superconducting electronic specific heat indicates conventional s-wave pairing. The experimental Sommerfeld coefficient of 44 mJ/mol_f.u./K^2 is about 4 times larger than the one found in band structure calculations. Together with the electron-phonon coupling constant lambda_ep \approx 1 this leaves an additional lambda_add \approx 2.4 for enhancement due to other mechanisms.

cond-mat.supr-con↗

arXiv2004

Al substitution in MgB2 crystals: influence on superconducting and structural properties

Single crystals of Mg1-xAlxB2 have been grown at a pressure of 30 kbar using the cubic anvil technique. Precipitation free crystals with x < 0.1 were obtained as a result of optimization of already developed MgB2 crystal growth procedure. Systematic decrease of the c-axis lattice constant with increasing Al content, when the a-axis lattice constant is practically unchanged, was observed. Variation of the critical temperature on Al content in Mg1-xAlxB2 crystals was found to be slightly different than that one observed for polycrystalline samples since, even a very small substitution of 1-2% of Al leads to the decrease of Tc by about 2-3 K. X-ray and high resolution transmission electron microscopy investigations indicate on the appearance of second precipitation phase in the crystals with x > 0.1. This is in a form of non-superconducting MgAlB4 domains in the structure of superconducting Mg1-xAlxB2 matrix. Resistivity and magnetic investigations show the slight increase of the upper critical field, Hc2, for H//c for the samples with small x, significant reduction of the Hc2 anisotropy at lower temperatures, and decrease of the residual resistance ratio value for Al substituted samples as compared to those of unsubstituted crystals. Superconducting gaps variation as a function of Al content, investigated with point contact spectroscopy for the series of the crystals with Tc in the range from 20 to 37 K, does not indicate on the merging of the gaps with decreasing Tc down to 20 K. It may be related to an appearance of the precipitation phase in the Mg1-xAlxB2 structure.

cond-mat.supr-con↗

arXiv2004

Threshold Voltage Shift in Organic Field Effect Transistors by Dipole-Monolayers on the Gate Insulator

We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self assembled monolayer (SAM). The observed shift of the transfer characteristics range from -2 to 50 V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4*10^12/cm^2. In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold region is broadened, indicating that the SAM creates additional trap states, whose density is estimated to be of order 1*10^12/cm^2.

cond-mat.mtrl-sci↗

arXiv2004

Synthesis of superconducting pyrochlore RbOs2O6

RbOs2O6, the third superconducting pyrochlore oxide (known so far), has been synthesized by encapsulation and by high pressure techniques. Suitable post chemical treatment of the as-prepared sample allowed us to eliminate the impurity phases. Bulk superconductivity with Tc=6.4 K was observed in magnetisation and specific heat measurements. The transition temperature of RbOs2O6 was found to be the same for both preparation methods. Structural investigations showed that Rb atoms occupy the 8b site in the pyrochlore lattice with a lattice parameter of 10.1137(1) A.

cond-mat.supr-con↗

arXiv2004

Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors

The surface conductivity is measured by a four-probe technique for pentacene and rubrene single-crystals laminated on polarized and nearly unpolarized molecular monolayers with application of perpendicular electric fields. The polarization of the self-assembled monolayers (SAMs) shifts the threshold gate voltage, while maintaining a very low subthreshold swing of the single-crystal devices (0.11 V/decade). The results, excluding influences of parasitic contacts and grain boundaries, demonstrate SAM-induced nanoscale charge injection up to ~10^12 cm^-2 at the surface of the organic single crystals.

cond-mat.mtrl-sci↗

arXiv2004

Carbon substitution in MgB2 single crystals: structural and superconducting properties

Growth of carbon substituted magnesium diboride Mg(B1-xCx)2 single crystals with 0<x<0.15 is reported and the structural, transport, and magnetization data are presented. The superconducting transition temperature decreases monotonically with increasing carbon content in the full investigated range of substitution. By adjusting the nominal composition, Tc of substituted crystals can be tuned in a wide temperature range between 10 and 39 K. Simultaneous introduction of disorder by carbon substitution and significant increase of the upper critical field Hc2 is observed. Comparing with the non-substituted compound, Hc2 at 15K for x=0.05 is enhanced by more then a factor of 2 for H oriented both perpendicular and parallel to the ab-plane. This enhancement is accompanied by a reduction of the Hc2-anisotropy coefficient gamma from 4.5 (for non-substituted compound) to 3.4 and 2.8 for the crystals with x = 0.05 and 0.095, respectively. At temperatures below 10 K, the single crystal with larger carbon content shows Hc2 (defined at zero resistance) higher than 7 and 24 T for H oriented perpendicular and parallel to the ab-plane, respectively. Observed increase of Hc2 cannot be explained by the change in the coherence length due to disorder-induced decrease of the mean free path only.

cond-mat.supr-con↗

arXiv2004

Superconductivity in Geometrically Frustrated Pyrochlore RbOs2O6

We report the basic thermodynamic properties of the new geometrically frustrated beta-pyrochlore bulk superconductor RbOs2O6 with a critical temperature Tc = 6.4 K. Specific heat measurements are performed in magnetic fields up to 12 T. The electronic density of states at the Fermi level in the normal state results in gamma = (33.7 \pm 0.2) mJ/mol_f.u./K^2. In the superconducting state, the specific heat follows conventional BCS-type behavior down to 1 K, i.e. over three orders of magnitude in specific heat data. The upper critical field slope at Tc is 1.2 T/K, corresponding to a Maki-parameter alpha = 0.64 \pm 0.1. From the upper critical field mu0 Hc2 \approx 6 T at 0 K, we estimate a Ginzburg-Landau coherence length xi \approx 7.4 nm. RbOs2O6 is the second reported metallic AB2O6 type pyrochlore compound after KOs2O6, and one of only three pyrochlore superconductors in addition to Cd2Re2O7 and KOs2O6.

cond-mat.supr-con↗