Epitaxial ferromagnetic semiconductor GdN thin films on Si substrate
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cond-mat.mtrl-sci↗
arXiv subjects
B. J. Ruck
Publications and source records attributed to B. J. Ruck.
Epitaxial integration of the intrinsic ferromagnetic semiconductor GdN with silicon technology
A major challenge for the next generation of spintronics devices is the implementation of ferromagnetic-semiconductor thin films as spin injectors and detectors. Spin-polarised carrier injection cannot be accomplished efficiently from metals, and coupled with the rarity of intrinsic ferromagnetic semiconductors this has driven intensive study of diluted magnetic semiconductors. Chief among these is the doped III-V compound (Ga,Mn)As. These materials suffer from a number of drawbacks; they (i) require magnetic-ion doping well above the solubility limit, and (ii) must be hole doped to above the degenerate limit, preventing independent control of the carrier concentration and charge sign. Here we demonstrate the first epitaxial growth of a recently-characterised intrinsic ferromagnetic semiconductor, GdN, on silicon substrates, providing an essential step on the way to integrate new spintronics functionalities into Si-based technology. The films have been characterised as regards their growth toward fully relaxed GdN, the density and mobility of their carriers, and their magnetic behaviour.
cond-mat.mtrl-sci↗
Near-Zero Moment Ferromagnetism in the Semiconductor SmN
The magnetic behaviour of SmN has been investigated in stoichiometric polycrystalline films. All samples show ferromagnetic order with Curie temperature (T_c) of 27 +/- 3 K, evidenced by the occurrence of hysteresis below T_c. The ferromagnetic state is characterised by a very small moment and a large coercive field, exceeding even the maximum applied field of 6 T below about 15 K. The residual magnetisation at 2 K, measured after cooling in the maximum field, is 0.035 mu_B per Sm. Such a remarkably small moment results from a near cancellation of the spin and orbital contributions for Sm3+ in SmN. Coupling to an applied field is therefore weak, explaining the huge coercive field . The susceptibility in the paramagnetic phase shows temperature-independent Van Vleck and Curie-Weiss contributions. The Van Vleck contribution is in quantitative agreement with the field-induced admixture of the J=7/2 excited state and the 5/2 ground state. The Curie-Weiss contribution returns a Curie temperature that agrees with the onset of ferromagnetic hysteresis, and a conventional paramagnetic moment with an effective moment of 0.4 mu_B per Sm ion, in agreement with expectations for the crystal-field modified effective moment on the Sm3+ ions.
cond-mat.str-el↗
Band structure of ZnO from resonant x-ray emission spectroscopy
Soft x-ray emission and absorption spectroscopy of the O K-edge are employed to investigate the electronic structure of wurtzite ZnO(0001). A quasiparticle band structure calculated within the GW approximation agrees well with the data, most notably with the energetic location of the Zn3d - O2p hybridized state and the anisotropy of the absorption spectra. Dispersion in the band structure is mapped using the coherent k-selective part of the resonant x-ray emission spectra. We show that a more extensive mapping of the bands is possible in the case of crystalline anisotropy such as that found in ZnO.
cond-mat.mtrl-sci↗
Comparison between experiment and calculated band structures for DyN and SmN
We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with LSDA+U calculations, although for SmN the calculations predict a zero band gap.
cond-mat.str-el↗
Ferromagnetic redshift of the optical gap in GdN
We report measurements of the optical gap in a GdN film at temperatures from 300 to 6K, covering both the paramagnetic and ferromagnetic phases. The gap is 1.31eV in the paramagnetic phase and red-shifts to 0.9eV in the spin-split bands below the Curie temperature. The paramagnetic gap is larger than was suggested by very early experiments, and has permitted us to refine a (LSDA+U)-computed band structure. The band structure was computed in the full translation symmetry of the ferromagnetic ground state, assigning the paramagnetic-state gap as the average of the majority- and minority-spin gaps in the ferromagnetic state. That procedure has been further tested by a band structure in a 32-atom supercell with randomly-oriented spins. After fitting only the paramagnetic gap the refined band structure then reproduces our measured gaps in both phases by direct transitions at the X point.
cond-mat.str-el↗
Quantitative study of molecular N_2 trapped in disordered GaN:O films
The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N_2 fraction, the level of oxygen impurities, and the absence of short-range order in the GaN:O matrix.
cond-mat.mtrl-sci↗
Stabilization of amorphous GaN by oxygen
Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence of non-tetrahedral bonds centered on oxygen. The ionic favourability of heteropolar bonds and its strikingly simple constraint to even-membered rings is the likely cause of the instability of stoichiometric a-GaN.
cond-mat.mtrl-sci↗
A Coupled Equations Model for Epitaxial Growth on Textured Surfaces
We have developed a continuum model that explains the complex surface shapes observed in epitaxial regrowth on micron scale gratings. This model describes the dependence of the surface morphology on film thickness and growth temperature in terms of a few simple atomic scale processes including adatom diffusion, step-edge attachment and detachment, and a net downhill migration of surface adatoms. The continuum model reduces to the linear part of the Kardar-Parisi-Zhang equation with a flux dependent smoothing coefficient in the long wavelength limit.
cond-mat.mtrl-sci↗