arXiv subjects

B. Nadgorny

Publications and source records attributed to B. Nadgorny.

16 recordsLinked to original sources

arXiv2019

Backflow Effect on Spin Diffusion Near Ferromagnet-Superconductor Interface

The behavior of spin propagation in metals in various measurement schemes is shown to be qualitatively different than a simple exponential decay - due to the backflow effect on spin diffusion in the presence of interfaces. To probe this effect we utilize the spin sensitivity of an Andreev contact between gold films of variable thickness deposited on top of a spin injector, Co$_{2}$Mn$_{0.5}$Fe$_{0.5}$Si, with the spin polarization of approximately 45\%, and Nb superconducting tip. While the results are consistent with gradually decaying spin polarization as the film thickness increases, the spin diffusion length in Au found to be 285 nm, is more than two times larger that one would have obtained without taking the backflow effect into account.

cond-mat.str-el↗

arXiv2017

Microstrain induced deviation from Néel's 1/d behaviour: Size-dependent magnetization in Bi1-xCaxFe1-yTiyO3-delta nanoparticles

Magnetization of antiferromagnetic nanoparticles is known to generally scale up inversely to their diameter (d) according to Néel's model. Here we report a deviation from this conventional linear 1/d dependence, altered significantly by the microstrain, in Ca and Ti substituted BiFeO3 nanoparticles. Magnetic properties of microstrain-controlled Bi1-xCaxFe1-yTiyO3-delta (y = 0 and x = y) nanoparticles are analyzed as a function of their size ranging from 18 nm to 200 nm. A complex interdependence of doping concentration (x or y), annealing temperature (T), microstrain (epsilon) and particle size (d) is established. X-ray diffraction studies reveal a linear variation of microstrain with inverse particle size, 1/d nm-1 (i.e. epsilon.d = 16.5 nm.%). A rapid increase in the saturation magnetization below a critical size dc ~ 35 nm, exhibiting a (1/d)^alpha (alpha ~ 2.6) dependence, is attributed to the influence of microstrain. We propose an empirical formula M is proportional to (1/d)epsilon^beta (beta ~ 1.6) to highlight the contributions from both the size and microstrain towards the total magnetization in the doped systems. The magnetization observed in nanoparticles is thus, a result of competing magnetic contribution from the terminated spin cycloid on the surface and counteracting microstrain present at a given size. Large magnetodielectric response of ~ 9.5 % is observed in spark plasma sintered pellets with optimal size and doping concentration, revealing a strong correlation between magnetic and ferroelectric order parameters.

cond-mat.mtrl-sci↗

arXiv2013

Comment on "Unified Formalism of Andreev Reflection at a Ferromagnet/Superconductor Interface" by T.Y. Chen, et al

A recent paper of Chen et al. claims to have derived an allegedly previously unavailable "unified" Andreev Reflection (AR) formalism for an arbitrary spin polarization P that recovers earlier results as its special limits. In this Comment we show that, contrary to this claim, there are numerous works correctly solving the problem formulated in this paper for an arbitrary P, while Chen et al formulas fail to correctly incorporate P \neq 0 effects and violate basic physical principles.

cond-mat.supr-con↗

arXiv2012

On the half-metallicity of Co2FeSi Heusler alloy: an experimental and ab initio study

Co2FeSi, a Heusler alloy with the highest magnetic moment per unit cell and the highest Curie temperature, has largely been described theoretically as a half-metal. This conclusion, however, disagrees with Point Contact Andreev Reflection (PCAR) spectroscopy measurements, which give much lower values of spin polarization, P. Here, we present the spin polarization measurements of Co2FeSi by the PCAR technique, along with a thorough computational exploration, within the DFT and a GGA+U approach, of the Coulomb exchange U-parameters for Co and Fe atoms, taking into account spin-orbit coupling. We find that the orbital contribution (mo) to the total magnetic moment (mT) is significant, since it is at least 3 times greater than the experimental uncertainty of mT. Account of mo radically affects the acceptable values of U. Specifically, we find no values of U that would simultaneously satisfy the experimental values of the magnetic moment and result in the half-metallicity of Co2FeSi. On the other hand, the ranges of U that we report as acceptable are compatible with spin polarization measurements (ours and the ones found in the literature), which all are within approximately 40-60% range. Thus, based on reconciling experimental and computational results, we conclude that: a) spin-orbit coupling cannot be neglected in calculating Co2FeSi magnetic properties, and b) Co2FeSi Heusler alloy is not half-metallic. We believe that our approach can be applied to other Heusler alloys such as Co2FeAl.

cond-mat.mtrl-sci↗

arXiv2010

Transport Spin Polarization of High-Curie Temperature MnBi Films

We report on the study of the structural, magnetic and transport properties of highly textured MnBi films with the Curie temperature of 628K. In addition to detailed measurements of resistivity and magnetization, we measure transport spin polarization of MnBi by Andreev reflection spectroscopy and perform fully relativistic band structure calculations of MnBi. A spin polarization from 51\pm1 to 63\pm1% is observed, consistent with the calculations and with an observation of a large magnetoresistance in MnBi contacts. The band structure calculations indicate that, in spite of almost identical densities of states at the Fermi energy, the large disparity in the Fermi velocities leads to high transport spin polarization of MnBi. The correlation between the values of magnetization and spin polarization is discussed.

cond-mat.mtrl-sci↗

arXiv2008

Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films

We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.

cond-mat.mtrl-sci↗

arXiv2007

Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb

The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ~ 10K. The spin polarization of 57+/-5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.

cond-mat.supr-con↗

arXiv2005

Andreev Reflection and Pair Breaking Effects at the Superconductor/Magnetic Semiconductor Interface

We investigate the applicability of spin polarization measurements using Andreev reflection in a point contact geometry in heavily doped dilute magnetic semiconductors, such as (Ga,Mn)As. While we observe conventional Andreev reflection in non-magnetic (Ga,Be)As epilayers, our measurements indicate that in ferromagnetic (Ga,Mn)As epilayers with comparable hole concentration the conductance spectra can only be adequately described by a broadened density of states and a reduced superconducting gap. We suggest that these pair-breaking effects stem from inelastic scattering in the metallic impurity band of (Ga,Mn)As and can be explained by introducing a finite quasiparticle lifetime or a higher effective temperature. For (Ga,Mn)As with 8% Mn concentration and 140 K Curie temperature we evaluate the spin polarization to be 83+/-17%. PACS numbers: 72.25.Dc,72.25.Mk,74.45.+c

cond-mat.str-el↗

arXiv2004

Spin Polarization and Electonic Structure of Room-Curie Ferromagnetic Mn5Ge3 Epilayers

Germanium-based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si-based electronics. Mn5Ge3 exhibits strong ferromagnetism up to the Curie temperature Tc~295K. We use Point Contact Andreev Reflection (PCAR) spectroscopy to measure the spin polarization of Mn5Ge3 epilayers grown by solid phase epitaxy on Ge(111). In addition, we calculate the spin polarization of bulk Mn5Ge3 in the diffusive and ballistic regimes using density-functional theory. The measured spin polarization, Pc=43+/-5% is compared to our theoretical estimates, PDFT=10+/-5% and 35+/-5% in the ballistic and diffusive limits respectively.

cond-mat.str-el↗

arXiv2004

Measurement of Spin Polarization by Andreev Reflection in Ferromagnetic In1-xMnxSb Epilayers

We carried out Point Contact Andreev Reflection (PCAR) spin spectroscopy measurements on epitaxially-grown ferromagnetic In1-xMnxSb epilayers with a Curie temperature of ~9K. The spin sensitivity of PCAR in this material was demonstrated by parallel control studies on its non-magnetic analog, In1-yBeySb. We found the conductance curves of the Sn point contacts with In1-yBeySb to be fairly conventional, with the possible presence of proximity-induced superconductivity effects at the lowest temperatures. The experimental Z-values of interfacial scattering agreed well with the estimates based on the Fermi velocity mismatch between the semiconductor and the superconductor. These measurements provided control data for subsequent PCAR measurements on ferromagnetic In1-xMnxSb, which indicated spin polarization in In1-xMnxSb to be 52 +- 3%.

cond-mat.supr-con↗

arXiv2003

Analysis of Point-contact Andreev Reflection Spectra in Spin Polarization Measurements

We present a systematic analysis of point-contact Andreev reflection (PCAR) spectra for ferromagnetic materials, using both modeling and experimental data. We consider the relationship between ballistic and diffusive transport, the effect of different transport regimes on spin polarization measurements, and the importance of unambiguous identification of the type of transport regime. We find that in a realistic parameter range, the analysis of PCAR spectra of purely diffusive character by a ballistic model yield approximately the same (within ~3%) values of the spin polarization and the barrier strength Z larger by ~ 0.5-0.6. We also consider the dependence of polarization values on Z, and have shown by simple modeling that letting the superconducting gap vary as an adjustable parameter can result in a spurious dependence of the spin-polarization Pc on Z. At the same time we analyzed the effects of finite Z on the apparent value of Pc measured by the PCAR technique, using a large number of examples from both our own measurements and from the literature. We conclude that there is a system-dependent variation in Pc (Z), presumably due to spin-flip scattering at the interface. However, the exact type of this dependence is hard to determine with any statistical certainty.

cond-mat.str-el↗

arXiv2003

Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films

We use point contact Andreev reflection spin spectroscopy to measure the transport spin polarization of MnAs epitaxial films grown on (001) GaAs. By analyzing both the temperature dependence of the contact resistance and the phonon spectra of lead acquired simultaneously with the spin polarization measurements, we demonstrate that all the point contacts are in the ballistic limit. A ballistic transport spin polarization of approximately 49% and 44% is obtained for the type A and type B orientations of MnAs, respectively. These measurements are consistent with our density functional calculations, and with recent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)As tunnel junctions.

cond-mat.str-el↗

arXiv2002

Measurements of Spin Polarization of Epitaxial SrRuO3 Thin Films

We have measured the transport spin-polarization of epitaxial thin films of the conductive ferromagnetic oxide, SrRuO3, using Point Contact Andreev Reflection Spectroscopy (PCAR). In spite of the fact that spin-up and spin-down electronic densities of states at the Fermi level for SrRuO3 calculated from band structure theory are practically the same, the experimental transport spin polarization for these films was found to be about 50%. This result is a direct consequence of the Fermi velocity disparity between the majority and minority bands and is in good agreement with our theoretical estimates.

cond-mat.str-el↗

arXiv2000

Probing Spin Polarization with Andreev Reflection: A Theoretical Basis

Andreev reflection at the interface between a ferromagnet and a superconductor has become a foundation of a versatile new technique of measuring the spin polarization of magnetic materials. In this paper we will briefly outline a general theory of Andreev reflection for spin-polarized systems and arbitrary Fermi surface in two limiting cases of ballistic and diffusive transport

cond-mat.mtrl-sci↗

arXiv2000

The origin of high transport spin polarization in La$_{0.7}$Sr$_{0.3} $MnO$_{3}$: direct evidence for minority spin states

Using the point contact Andreev reflection technique, we have carried out a systematic study of the spin polarization in the colossal magnetoresistive manganite, La$_{0.7}$Sr$_{0.3}$MnO$_{3}$} (LSMO). Surprisingly, we observed a significant increase in the current spin polarization with the residual resistivity. This counterintuitive trend can be understood as a transition from ballistic to diffusive transport in the contact. Our results strongly suggest that LSMO does have minority spin states at the Fermi level. However, since its current spin polarization is much higher than that of the density of states, this material can mimic the behavior of a true half-metal in transport experiments. Based on our results we call this material a {\it transport} half-metal.

cond-mat.mtrl-sci↗

arXiv1999

Transport spin polarization of Ni_xFe_{1-x}: electronic kinematics and band structure

We present measurements of the transport spin polarization of Ni_xFe_{1-x} (0<x<1) using the recently-developed Point Contact Andreev Reflection technique, and compare them with our first principles calculations of the spin polarization for this system. Surpisingly, the measured spin polarization is almost composition-independent. The results clearly demonstrate that the sign of the transport spin polarization does not coincide with that of the difference of the densities of states at the Fermi level. Calculations indicate that the independence of the spin polarization of the composition is due to compensation of density of states and Fermi velocity in the s- and d- bands.

cond-mat.mtrl-sci↗