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arXiv · 0808.1123

Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films

Raghava P. Panguluri·P. Kharel·C. Sudakar·R. Naik·R. Suryanarayanan·V. M. Naik·A. G. Petukhov·B. Nadgorny·G. Lawes
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Abstract

We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.

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Raghava P. Panguluri, P. Kharel, C. Sudakar, R. Naik, R. Suryanarayanan, V. M. Naik, A. G. Petukhov, B. Nadgorny, G. Lawes. 2008-08-07. Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films. https://doi.org/10.1103/physrevb.79.165208

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