arXiv subjects

B. P. Gorshunov

Publications and source records attributed to B. P. Gorshunov.

18 recordsLinked to original sources

arXiv2020

Microwave response of interacting oxide two-dimensional electron systems

We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based two-dimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density samples a response due to cyclotron resonance (CR) absorption dominates, while high density samples exhibit pronounced microwave-induced resistance oscillations (MIRO). Microwave transmission experiments serve as a complementary means of detecting the CR over the entire range of electron densities and as a reference for the band mass unrenormalized by interactions. Both CR and MIRO-associated features in the resistance permit extraction of the effective mass of electrons but yield two distinct values. The conventional cyclotron mass representing center-of-mass dynamics exhibits no change with density and coincides with the band electron mass of bulk ZnO, while MIRO mass reveals a systematic increase with lowering electron density consistent with renormalization expected in interacting Fermi liquids.

cond-mat.mes-hall↗

arXiv2020

THz electrodynamics of BaFe$_{1.91}$Ni$_{0.09}$As$_{2}$ film analyzed in the framework of multiband Eliashberg theory

The temperature dependences of the plasma frequency, superfluid density and London penetration depth were determined from terahertz spectra of conductivity and dielectric permittivity of BaFe$_{1.91}$Ni$_{0.09}$As$_{2}$ film with critical temperature $T_c=19.6$~K. Part of experimental data were analyzed within a simple three-band Eliashberg model where the mechanism of superconducting coupling is mediated by antiferromagnetic spin fluctuations, whose characteristic energy $Ω_{0}$ scales with $T_{c}$ according to the empirical law $Ω_{0} = 4.65k_{B}T_{c}$, and with a total electron-boson coupling strength $λ_{tot} = 2.17$.

cond-mat.supr-con↗

arXiv2019

Low-temperature infrared spectroscopy of Tm0.19Yb0.81B12 dodecaboride with metal-insulator transition and dynamic charge stripes

Tm1-xYbxB12 dodecaborides represent model objects for the studies of quantum critical behavior, metal-insulator transition and complex charge-spin-orbital-phonon coupling phenomena. In spite of intensive investigations, the mechanism of the ground state formation in this strongly correlated electron system remains a subject of active debates. We have performed first systematic measurements of temperature-dependent spectra of infrared conductivity of Tm0.19Yb0.81B12 at frequencies 40-35000 cm-1 and in the temperature interval from 300 K down to 10 K. Analysis of the temperature evolution of the observed absorption resonances is performed. Their origin is associated with the Jahn-Teller instability in the cubic lattice which results in the rattling modes of the rare earth ions and leads to emergence of both the intra-gap mixed-type collective excitations and the dynamic charge stripes. Temperature dependent effective mass of charge carriers is determined and a picture is presented of the multiple relaxation channels and the transformation of the manybody states at different temperatures. We argue in favor of electronic phase separation scenario which is valid both for the metal-insulator transition and for the formation of the nanoscale filamentary structure in Tm1-xYbxB12 compounds.

cond-mat.str-el↗

arXiv2018

Doping evolution of the gap structure and spin-fluctuation pairing in $Ba(Fe_{1-x}Co_{x})_{2}As_{2}$ superconductors

Doping dependence of the superconducting state structure and spin-fluctuation pairing mechanism in the $Ba(Fe_{1-x}Co_{x})_{2}As_{2}$ family is studied. BCS-like analysis of experimental data shows that in the overdoped regime, away from the AFM transition, the spin-fluctuation interaction between the electron and hole gaps is weak, and $Ba(Fe_{1-x}Co_{x})_{2}As_{2}$ is characterized by three essentially different gaps. In the three-gap state an anisotropic (nodeless) electron gap $Δ_e (x, ϕ)$ has an intermediate value between the dominant inner $Δ_{2h}(x)$ and outer $Δ_{1h}(x)$ hole gaps. Close to the AFM transition the electron gap $Δ_e (x, ϕ)$ increases sharply and becomes closer in magnitude to the dominant inner hole gap $Δ_{2h}(x)$. The same two-gap state with close electron and inner hole gaps $Δ_{2h}(x) \approx Δ_e (x, ϕ)$ is also preserved in the phase of coexisting antiferromagnetism and superconductivity. The doping dependence of the electron gap $Δ_e (x, ϕ)$ is associated with the strong doping dependence of the spin-fluctuation interaction in the AFM transition region. In contrast to the electron gap $Δ_e (x, ϕ)$, the doping dependence of the hole gaps $Δ_{1,2h}(x)$ and the critical temperature $T_{c}(x)$, both before and after the AFM transition, are associated with a change of the density of states $γ_{nh}(x)$ and the intraband electron-phonon interaction in the hole bands. The non-phonon spin-fluctuation interaction in the hole bands in the entire Co concentration range is small compared with the intraband electron-phonon interaction and is not dominant in the $Ba(Fe_{1-x}Co_{x})_{2}As_{2}$ family.

cond-mat.supr-con↗

arXiv2018

Collective infrared excitation in rare-earth Gd$_x$La$_{1-x}$B$_6$ hexaborides

Using Fourier-transform infrared spectroscopy and optical ellipsometry, room temperature spectra of complex conductivity of single crystals of hexaborides Gd$_x$La$_{1-x}$B$_6$, $x$(Gd)$=0$, 0.01, 0.1, 0.78, 1 are determined in the frequency range 30$-$35000$~cm^{-1}$. In all compounds, in addition to the Drude free-carrier spectral component, a broad excitation is discovered with the unusually large dielectric contribution $Δ$$\varepsilon$=5000 -- 15000 and non-Lorentzian lineshape. It is suggested that the origin of the excitation is connected with the dynamic cooperative Jahn-Teller effect of B$_6$ clusters. Analysis of the spectra together with the results of DC and Hall resistivity measurements shows that only 30$-$50$\%$ of the conduction band electrons are contributing to the free carrier conductivity with the rest being involved in the formation of an overdamped excitation, thus providing possible explanation of remarkably low work function of thermoemission of Gd$_x$La$_{1-x}$B$_6$ and non-Fermi-liquid behavior in GdB$_6$ crystals.

cond-mat.mtrl-sci↗

arXiv2018

Unique interplay between superconducting and ferromagnetic orders in EuRbFe$_4$As$_4$

Transport, magnetic and optical investigations on EuRbFe$_4$As$_4$ single crystals evidence that the ferromagnetic ordering of the Eu$^{2+}$ magnetic moments at $T_N=15$ K, below the superconducting transition ($T_c=36$ K), affects superconductivity in a weak but intriguing way. Upon cooling below $T_N$, the zero resistance state is preserved and the superconductivity is affected by the in-plane ferromagnetism mainly at domain boundaries; a perfect diamagnetism is recovered at low temperatures. The infrared conductivity is strongly suppressed in the far-infrared region below $T_c$, associated with the opening of a complete superconducting gap at $2Δ= 10$ meV. A gap smaller than the weak coupling limit suggests the strong orbital effects or, within a multiband superconductivity scenario, the existence of a larger yet unrevealed gap.

cond-mat.supr-con↗

arXiv2018

Observation of dynamic charge stripes in Tm0.19Yb0.81B12 at the metal-insulator transition

Higher accuracy low temperature charge transport measurements in combination with precise X-ray diffraction experiment have allowed detecting the symmetry lowering in the single domain Tm0.19Yb0.81B12 crystals of the family of dodecaborides with metal-insulator transition. Basing on the fine structure analysis we discover formation of dynamic charge stripes within the semiconducting matrix of Tm0.19Yb0.81B12. The charge dynamics in these metallic nano-size conducting channels is characterized by broad-band optical spectroscopy that allowed estimating the frequency (~2.4 10^11 Hz) of quantum motion of the charge carriers. It is suggested that caused by cooperative Jahn-Teller effect in the boron sub-lattice, the large amplitude rattling modes of the Tm and Yb ions are responsible for modulation of the conduction band along [110] direction through the variation of 5d-2p hybridization of electron states.

cond-mat.str-el↗

arXiv2013

Observation of an inter-sublattice exchange magnon in CoCr$_2$O$_4$ and analysis of magnetic ordering

We report on an investigation of optical properties of multiferroic CoCr$_{2}$O$_{4}$ at terahertz frequencies in magnetic fields up to 30 T. Below the ferrimagnetic transition (94 K), the terahertz response of CoCr$_{2}$O$_{4}$ is dominated by a magnon mode, which shows a steep magnetic-field dependence. We ascribe this mode to an exchange resonance between two magnetic sublattices with different $g$-factors. In the framework of a simple two-sublattice model (the sublattices are formed by Co$^{2+}$ and Cr$^{3+}$ ions), we find the inter-sublattice coupling constant, $λ= - (18 \pm 1)$ K, and trace the magnetization for each sublattice as a function of field. We show that the Curie temperature of the Cr$^{3+}$ sublattice, $Θ_{2}$ = $(49 \pm 2)$ K, coincides with the temperature range, where anomalies of the dielectric and magnetic properties of CoCr$_{2}$O$_{4}$ have been reported in literature.

cond-mat.mtrl-sci↗

arXiv2012

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films. Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 mcm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies 0.3-1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk germanium (not organized in an array of quantum dots). The excess conductivity is not observed in the structures with the Ge coverage less than 8 Å. When a Ge/Si(001) sample is cooled down the conductivity decreases. We discuss possible mechanisms that can be responsible for the observed effects.

cond-mat.mtrl-sci↗

arXiv2012

Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity

Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect multilayer films. Exploration of the photovoltaic effect in Si p--i--n-structures with Ge quantum dots allowed us to propose a new approach to designing of infrared detectors. First data on THz dynamical conductivity of Ge/Si(001) heterostructures in the temperature interval from 5 to 300 K and magnetic fields up to 6 T are reported.

cond-mat.mtrl-sci↗

arXiv2012

Observation of Multiple Superconducting Gaps in the Infrared Reflectivity Spectra of Ba(Fe0.9Co0.1)2As2

The results of infrared reflectivity measurements for the iron-based high-temperature superconductor Ba(Fe0.9Co0.1)2As2 are reported. The reflectivity is found to be close to unity at frequencies w lower than 2Delta/h (2Delta is the superconducting gap and h is Planck's constant). This is evidence for the s+/- or s+/+ symmetry of the superconducting order parameter in the studied compound. The infrared reflectivity spectra of Ba(Fe0.9Co0.1)2As2 manifest opening of several superconducting gaps at temperatures lower than critical Tc.

cond-mat.supr-con↗

arXiv2011

B-T phase diagram of CoCr2O4 in magnetic fields up to 14 T

We have measured the magnetization and specific heat of multiferroic CoCr2O4 in magnetic fields up to 14 T. The high-field magnetization measurements indicate a new phase transition at T* = 5 - 6 K. The phase between T* and the lock-in transition at 15 K is characterized by magnetic irreversibility. At higher magnetic fields, the irreversibility increases. Specific-heat measurements confirm the transition at T*, and also show irreversible behavior. We construct a field-temperature phase diagram of CoCr2O4.

cond-mat.mtrl-sci↗

arXiv2011

Theoretical investigation of electronic specific heat of two-band superconductors

We apply the generalized two-band model of superconductivity to calculate the electronic contribution to the specific heat, superconducting gaps and electron-boson coupling constants of the multi-band layered superconductors MgB2 and Ba(Fe0.925Co0.075)2As2. For both compounds, the obtained temperature-behavior of the specific heat well describes the experimental data. We compare our findings with the "two-band - model" that is frequently used to calculate the electronic specific heat, and that is applicable only for superconductors with strong interband scattering ("dirty" enough superconductors).

cond-mat.supr-con↗

arXiv2011

Spin excitations of the correlated semiconductor FeSi probed by THz radiation

By direct measurements of the complex optical conductivity $σ(ν)$ of FeSi we have discovered a broad absorption peak centered at frequency $ν_{0}(4.2 K) \approx 32 cm^{-1}$ that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of $H_{e}=34\pm 6 T$. Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.

cond-mat.str-el↗

arXiv2011

Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots

The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed.

cond-mat.mes-hall↗

arXiv2011

Polar modes in multiferroic Ba_2Mg_2Fe_(12)O_(22) hexagonal Y-type hexaferrite

Spectra of transmission and reflection coefficients of single crystalline Y-type hexaferrite Ba_(2)Mg_(2)Fe_(12)O_(22) are measured at Terahertz and infrared frequencies, 3 - 4500 c--1, and at temperatures 10 to 300 K, for polarization E prp c. Oscillator parameters of nineteen phonon lines allowed by the R3m crystal lattice symmetry are determined. Absorption lines assignment to vibrational modes of the lattice structural fragments is performed. Below the temperatures of 195 K and 50 K, corresponding to the zero field phase transitions to the proper screw and to the longitudinal-conical spin states, respectively, new absorption lines are discovered whose origin is assigned to the electric-dipole active magnetic excitations.

cond-mat.mtrl-sci↗

arXiv2010

Two-band BCS superconductivity in Ba(Fe0.9Co0.1)2As2

The conductivity and permittivity optical spectra of iron-pnictide Ba(Fe0.9Co0.1)2As2 film (Tc=20 K) are analyzed. In the superconducting state, at all temperatures up to Tc the temperature dependences of the magnetic field penetration depth and of the superconducting condensate density are well described within the generalized two-band BCS model with intraband and interband pairing interactions considered. It is shown that the smaller superconducting energy gap 2Δ = 3.7 meV develops in the electronic subsystem while the larger gap 2Δ >= 7 meV opens in the hole subsystem. The normal state parameters (plasma frequencies and scattering rates) of electron and hole conduction bands are determined. At all temperatures the obtained data are consistent with the results of electronic photoemission experiments on Ba(Fe1-x Cox)2As2.

cond-mat.supr-con↗

arXiv2010

Terahertz conductivity of Si and of Ge/Si(001) heterostructures with quantum dots

With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical terahertz-subterahertz coherent source BWO spectroscopy. The conductivity is found to be strongly enhanced compared with the conductivity of bulk germanium. Possible microscopic mechanisms responsible for the enhancement will be discussed. Application of BWO spectrometers for obtaining precise quantitative information on of dielectric properties at THz-subTHz frequencies of semiconducting layers and structures is demonstrated by presenting the temperature dependences of dielectric characteristics of a commercial silicon wafer at frequencies 0.3 to 1.2 THz and temperatures 5K-300K.

cond-mat.mtrl-sci↗