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arXiv · 1203.5631

Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity

V. A. Yuryev·L. V. Arapkina·M. S. Storozhevykh·V. A. Chapnin·K. V. Chizh·O. V. Uvarov·V. P. Kalinushkin·E. S. Zhukova·A. S. Prokhorov·I. E. Spektor·B. P. Gorshunov
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Abstract

Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect multilayer films. Exploration of the photovoltaic effect in Si p--i--n-structures with Ge quantum dots allowed us to propose a new approach to designing of infrared detectors. First data on THz dynamical conductivity of Ge/Si(001) heterostructures in the temperature interval from 5 to 300 K and magnetic fields up to 6 T are reported.

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V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh, V. A. Chapnin, K. V. Chizh, O. V. Uvarov, V. P. Kalinushkin, E. S. Zhukova, A. S. Prokhorov, I. E. Spektor, B. P. Gorshunov. 2012-03-26. Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity. https://arxiv.org/abs/1203.5631

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