arXiv subjects

Baisali Ghadai

Publications and source records attributed to Baisali Ghadai.

3 recordsLinked to original sources

arXiv2026

Origin of mixed anisotropy in crystalline Permalloy and amorphous Cobalt thin films individually deposited on Si substrate

Magnetic anisotropy (MA) plays a crucial role in deciding both static and dynamic behaviour of magnetic thin films. It controls various phenomena, such as magnetization reversal, domain formation, domain-wall motion, spin-wave generation, and spin-wave propagation etc. We investigate the mixed anisotropies in face-centred-cubic Permalloy (fcc-Py) and amorphous Cobalt (a-Co) thin films deposited via rf magnetron sputtering on Si (100) substrate with thicknesses, d = 5-125 nm and t = 5-150 nm, respectively. X-ray diffraction technique, atomic force microscopy, and vibrating sample magnetometry are employed to study the structural, morphological, and magnetic properties. We adopt a qualitative approach to understand the nature of different anisotropies present in both materials. Mixed anisotropies evolve with film thicknesses for both fcc-Py and a-Co films. The role of growth conditions in the emergence of specific anisotropies is discussed in detail. An alteration of the magnetization easy axis from the conventional in-plane orientation is evidenced due to the collective influence of these mixed anisotropies. Based on the dominance of anisotropy components, their origin, and the direction of magnetization tilt, we categorize our samples as belonging to specific regimes. Introduction of magnetization tilt has been proven to be an extremely innovative way to improve the performance of spintronic devices so far. The one-to-one comparison between a sputter-deposited crystalline and an amorphous magnetic material could be beneficial for building a stronger foundation for that.

cond-mat.mtrl-sci↗

arXiv2025

Anomalous Hysteresis Behavior in Sputter-deposited Ultrathin Films of Amorphous- CoFeB Alloy

Thin amorphous-CoFeB (a-CFB) is deposited by rf-magnetron sputtering on a self-oxidized Si (100) substrate with different film thicknesses ranging from 0.7 nm to 20 nm. The 5-nm-thick a-CFB film is capped with a W layer for comparison. The surface morphology is investigated by using the atomic force microscopy technique. The low roughness of all the surface of the film indicates uniformity, moderate corrosion resistance, and good structural quality. The X-ray diffraction spectra reveal the amorphous nature of the CFB layer, while the W capping is of mixed phase in the experimental thickness regime. In-plane and out-of-plane hysteresis loops obtained from the vibrating sample magnetometry technique show a transition from an upright S to nearly rectangular shape via a completely inverted profile. A self-sustained tilted magnetic anisotropy is stabilized in a seed-free environment based on the direct substrate-to-magnet interaction. The interface anisotropy is estimated to be 0.06 erg/cm2. The complex anisotropic behavior originates from the interplay between interface anisotropy, conventional shape anisotropy, growth-induced anisotropies, and inhomogeneity-induced anisotropies. In essence, effective anisotropy is responsible for the anomalous hysteresis behavior observed in these films, and this work might provide valuable insights to improve the functionalities of amorphous soft magnetic alloys.

cond-mat.mtrl-sci↗

arXiv2025

CoRuTiGe: A Possible Spin Gapless Semiconductor

We report experimental and theoretical investigations on the quaternary Heusler alloy CoRuTiGe, synthesized using the arc melting technique. Crystal structure analysis reveals a tetragonal structure at room temperature. Magnetization measurements as a function of temperature and magnetic field indicate ferromagnetic nature with a saturation magnetization of 0.681 mB/f.u. at 5 K. The temperature dependence of electrical resistivity shows a nearly linear decrease in the high-temperature range, indicating the spin gapless semiconductor like behavior of the material. This SGS nature is further supported by the temperature-independent carrier concentration and mobility. Hall effect analysis reveals that the anomalous Hall effect in CoRuTiGe arises from both intrinsic and extrinsic mechanisms. Additionally, a well-defined symmetric negative magnetoresistance is observed at low temperatures. These findings suggest that CoRuTiGe holds significant promise for spintronic applications.

cond-mat.mtrl-sci↗