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arXiv · 2508.12376

CoRuTiGe: A Possible Spin Gapless Semiconductor

Ravinder Kumar·Tufan Roy·Baisali Ghadai·Rakesh Kumar·Sucheta Mondal·Anil Kumar·Archana Lakhani·Devendra Kumar·Masafumi Shirai·Sachin Gupta
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Abstract

We report experimental and theoretical investigations on the quaternary Heusler alloy CoRuTiGe, synthesized using the arc melting technique. Crystal structure analysis reveals a tetragonal structure at room temperature. Magnetization measurements as a function of temperature and magnetic field indicate ferromagnetic nature with a saturation magnetization of 0.681 mB/f.u. at 5 K. The temperature dependence of electrical resistivity shows a nearly linear decrease in the high-temperature range, indicating the spin gapless semiconductor like behavior of the material. This SGS nature is further supported by the temperature-independent carrier concentration and mobility. Hall effect analysis reveals that the anomalous Hall effect in CoRuTiGe arises from both intrinsic and extrinsic mechanisms. Additionally, a well-defined symmetric negative magnetoresistance is observed at low temperatures. These findings suggest that CoRuTiGe holds significant promise for spintronic applications.

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Ravinder Kumar, Tufan Roy, Baisali Ghadai, Rakesh Kumar, Sucheta Mondal, Anil Kumar, Archana Lakhani, Devendra Kumar, Masafumi Shirai, Sachin Gupta. 2025-08-17. CoRuTiGe: A Possible Spin Gapless Semiconductor. https://doi.org/10.1103/l85m-lqqq

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