arXiv subjects

Baohua Li

Publications and source records attributed to Baohua Li.

11 recordsLinked to original sources

arXiv2026

Investigation of GeSn aspect ratio trapping growth up to 8% Sn

Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxide-semiconductor (CMOS)-compatible GeSn optoelectronics devices. Its local growth on patterned substrate allows for versatile device integration into photonics integrated circuit or for stand-alone structure like focal plane array imager. Additionally, high aspect ratio from nano-sized window can terminate early threading dislocation propagation on the oxide sidewalls, leaving subsequent growth defect-free and potentially improving the device performance. Knowledge remains missing regarding GeSn ART growth kinetics, morphology and how they evolve from thin film growth, with successful growth itself yet to be demonstrated. In this work, we report GeSn ART growth up to 8% Sn. Two configurations -- self-induced Ge core/GeSn shell for Sn content between 6% and 8%, and bulk GeSn ART for Sn content below 1% -- are observed. We present a comprehensive study on GeSn ART growth kinetics through different growth rounds and designs, showing a link between pyramid shape of ART island and successful Sn incorporation, as well as the role of growth selectivity and local heating.

cond-mat.mtrl-sci↗

arXiv2026

Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection

As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-oxide-semiconductor (CMOS) manufacturing line also accelerates. Selective area growth (SAG) on patterned substrate emerges as a promising approach for this quest, with locally controlled growth of GeSn laser/detector suitable for either co-integration with silicon-based waveguide structure or stand-alone module like focal plane array. In this work, we report successful GeSn SAG with Sn content ranging from 3.2% to 8.7% of good optical quality, with demonstration of tunable GeSn SAG photoluminescence and GeSn SAG photoconductor device, the latter with detection cutoff wavelength up to 2 um. In addition, we present a comprehensive study of GeSn SAG condition at different window sizes, from 2 um to 100 um, and shapes: circle, square, octagon, and rectangle. Presence of loading effect is revealed, where GeSn growth rate increases as pattern fill factor and window size shrink. It introduces a different growth condition compared to thin film growth, which can weaken or inhibit Sn incorporation at very small window size and induce Sn segregation in high Sn content SAG growth.

physics.app-ph↗

arXiv2026

Germanium-tin (GeSn) avalanche photodiode with up to 2.7 micro cutoff wavelength for extended SWIR detection

Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent k-factor of Si as multiplication layer and SWIR or e-SWIR band absorption of GeSn. However, unlike well-established growth of GeSn on Si with thick Ge buffer in-between to reduce threading dislocation density due to lattice mismatch, GeSn on Si APD design requires relatively thin Ge buffer to limit electric field drop through the background p-doped buffer and efficiently transporting photocarrier from GeSn absorber to Si multiplication layer, therefore making growth of high Sn content APD for e-SWIR coverage very challenging. In this work, we experimentally demonstrate GeSn on Si APD up to 12.7 percent Sn, monolithically grown on Si substrate with 122-nm-thick Ge buffer in between, which is considerably thinner than widely used 700-900 nm thick Ge buffer. Stronger relaxation of GeSn absorber via thin Ge buffer favors Sn incorporation, leading to higher Sn content than the nominal target of 8 percent Sn. Device detection range is significantly improved compared to previous work - with cutoff wavelength increased up to 2.7 micro at 300 K, in parallel with high avalanche gain at 77 K up to 21 at 1.55 micro and up to 52 at 2 micro, and good responsivity in SWIR or e-SWIR range, up to 1.45 AW-1 at 1.55 micro and 0.66 AW-1 at 2 micro.

physics.app-ph↗

arXiv2025

Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer

GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength absorption in GeSn and low impact ionization ratio of Si. Due to lattice mismatch between Si and GeSn that would degrade GeSn material quality if with direct growth, a 240-nm-thick Ge buffer was utilized which simultaneously allows for the transporting photo generated electrons from GeSn absorber to Si multiplication layer. Spectral response showed the cut off wavelength beyond 2.1 μm at room temperature. Dart current and capacitance-voltage measurements indicated a punch-through voltage of -10 V. The measured responsivities were 0.55 A/W and 0.34 A/W under 1.55 μm and 1.9 μm excitation lasers, respectively. The maximum gain was obtained as 3.44 at 77 K under 1.9 μm laser. Even at 250 K, the calculated gain was greater than unity. Simulation of electric field distribution revealed that the GeSn is partially depleted at operating voltages, which can be improved by reducing the background doping levels in GeSn absorber and Ge buffer layer.

physics.app-ph↗

arXiv2024

Monolithic Germanium Tin on Si Avalanche Photodiodes

We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.

cond-mat.mtrl-sci↗

arXiv2024

Electrically Injected mid-infrared GeSn laser on Si operating at 140 K

Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under pulsed condition and at cryogenic temperature under continuous-wave excitation show great promise of GeSn lasers to be efficient electrically injected light sources on Si. Here we report electrically injected GeSn lasers using Fabry-Perot cavity with 20, 40, and 80 micron ridge widths. A maximum operating temperature of 140 K with lasing threshold of 0.756 kA/cm2 at 77 K and emitting wavelength of 2722 nm at 140 K was obtained. The lower threshold current density compared to previous works was achieved by reducing optical loss and improving the optical confinement. The peak power was measured as 2.2 mW/facet at 77 K.

physics.optics↗

arXiv2020

Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K

GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses and material compositions. The cap layer total thickness was varied between 240 and 100 nm. At 10 K, a 240-nm-SiGeSn capped device had a threshold current density Jth = 0.6 kA/cm2 compared to Jth = 1.4 kA/cm2 of a device with 100-nm-SiGeSn cap due to an improved modal overlap with the GeSn gain region. Both devices had a maximum operating temperature Tmax = 100 K. Device with cap layers of Si0.03Ge0.89Sn0.08 and Ge0.95Sn0.05, respectively, were also compared. Due to less effective carrier (electron) confinement, the device with a 240-nm-GeSn cap had a higher threshold Jth = 2.4 kA/cm2 and lower maximum operating temperature Tmax = 90 K, compared to those of the 240-nm-SiGeSn capped device with Jth = 0.6 kA/cm2 and Tmax = 100 K. In the study of the active region material, the device with Ge0.85Sn0.15 active region had a 2.3 times higher Jth and 10 K lower Tmax, compared to the device with Ge0.89Sn0.11 in its active region. This is likely due to higher defect density in Ge0.85Sn0.15 rather than an intrinsic issue. The longest lasing wavelength was measured as 2682 nm at 90 K. The investigations provide guidance to the future structure design of GeSn laser diodes to further improve the performance.

physics.app-ph↗

arXiv2020

Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics

The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si)GeSn based quantum wells (QWs) have been investigated aiming to improve the device performance. While the multiple QW structure is preferred for the device application, the single quantum well (SQW) is more suitable for optical property study. In this work, a comprehensive study of a SiGeSn/GeSn SQW was conducted. The calculated band diagram provided the band alignment and energies of possible transitions. The SQW features the direct bandgap well with L-Γ valley energy separation of 50 meV, and the barrier heights for both electron and hole are greater than 80 meV. Using two continuous-wave and two pulsed pumping lasers, the analysis of PL spectra allows for identifying different transitions and for better understanding the SQW optical properties. The study could provide the guidance for advancing the future QW design towards device applications.

physics.app-ph↗

arXiv2020

Electrically injected GeSn lasers on Si operating up to 100 K

The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electrical injection have not been experimentally achieved yet. In this work, we report the first demonstration of electrically injected GeSn lasers on Si. A GeSn/SiGeSn heterostructure diode grown on a Si substrate was fabricated into ridge waveguide laser devices and tested under pulsed conditions. Special considerations were given for the structure design to ensure effective carrier confinement and optical confinement that lead to lasing. Lasing was observed at temperatures from 10 to 100 K with emission peaks at around 2300 nm. The minimum threshold of 598 A/cm2 was recorded at 10 K and the threshold increased to 842 A/cm2 at 77 K. The spectral linewidth of a single peak was measured as small as 0.13 nm (0.06 meV). The maximum characteristic temperature was extracted as 99 K over the temperature range of 10-77 K.

physics.app-ph↗

arXiv2019

Si-based GeSn photodetectors towards mid-infrared imaging applications

This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 um. The measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors; 2) the development of surface passivation technique on photodiode based on in-depth analysis of dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors.

physics.app-ph↗

arXiv2017

Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K

A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 μm. The GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors. The achieved maximum Sn composition of 17.5% exceeded the generally acknowledged Sn incorporation limits for using similar deposition chemistries. The highest lasing temperature was measured as 180 K with the active layer thickness as thin as 260 nm. The unprecedented lasing performance is mainly due to the unique growth approaches, which offer high-quality epitaxial materials. The results reported in this work show a major advance towards Si-based mid-infrared laser sources for integrated photonics.

physics.app-ph↗