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Bart J. van Wees

Publications and source records attributed to Bart J. van Wees.

64 records · Page 4Linked to original sources

Platinum thickness dependence of the inverse spin-Hall voltage from spin pumping in a hybrid YIG/Pt system

We show the first experimental observation of the platinum (Pt) thickness dependence in a hybrid YIG/Pt system of the inverse spin-Hall effect from spin pumping, over a large frequency range and for different rf powers. From the measurement of the dc voltage ($Δ\textrm{V}$) at the resonant condition and the resistance ($R$) of the Pt layer, a strong enhancement of the ratio $Δ\textrm{V}/R$ has been observed, which is not in agreement with previous studies on the NiFe/Pt system. The origin of this behaviour is still unclear and cannot be explained by the spin transport model that we have used.

cond-mat.mes-hall↗

Reversible hydrogenation and band gap opening of graphene and graphite surfaces probed by scanning tunneling spectroscopy

The effect of hydrogenation on the topography and the electronic properties of graphene and graphite surfaces are studied by scanning tunneling microscopy and spectroscopy. The surfaces are chemically modified using Ar/H2 plasma. Analyzing thousands of scanning tunneling spectroscopy measurements we determine that the hydrogen chemisorption on the surface of graphite/graphene opens on average an energy band gap of 0.4 eV around the Fermi level. We find that although the plasma treatment modifies the surface topography in a non-reversible way, the change in the electronic properties can be reversed by a moderate thermal annealing and the samples can be hydrogenated again yielding a similar, but slightly reduced, semiconducting behavior after the second hydrogenation.

cond-mat.mes-hall↗

Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer between graphene and its environment are not clarified yet. We analyze the relation between electrochemical and electronic properties of graphene FET in moist environment extracted from the standard back gate dependence of the graphene resistance. We argue that graphene based FET on a regular SiO2 substrate exhibits behavior that corresponds to electrochemically induced hysteresis in ambient conditions, and can be caused by charge trapping mechanism associated with sensitivity of graphene to the local pH.

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Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene

We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on their thickness, the illumination wavelength and the SiO2 substrate thickness, can be quantitatively accounted for by a Fresnel law based model. The preparation of atomically thin insulating crystalline sheets will enable the fabrication of ultrathin defect-free insulating substrates, dielectric barriers or planar electron tunneling junctions. Additionally, we show that few-layer graphene flakes can be deposited on top of a previously transferred mica flake. Our transfer method relies on viscoelastic stamps, as those used for soft lithography. A Raman spectroscopy study shows that such an all-dry deposition technique yields cleaner and higher quality flakes than conventional wet-transfer procedures based on lithographic resists.

cond-mat.mes-hall↗

Quantized conductance of a suspended graphene nanoconstriction

A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental verification and/or discovery of many new quantum mechanical effects in this field. Examples are effects due to specific graphene edges, such as spin polarization at zigzag edges of a graphene nanoribbon and the use of the valley degree of freedom in the field of graphene valleytronics8. As a first step in this direction we present the observation of quantized conductance at integer multiples of 2e^2/h at zero magnetic field and 4.2 K temperature in a high mobility suspended graphene ballistic nanoconstriction. This quantization evolves into the typical quantum Hall effect for graphene at magnetic fields above 60mT. Voltage bias spectroscopy reveals an energy spacing of 8 meV between the first two subbands. A pronounced feature at 0.6 2e^2/h present at a magnetic field as low as ~0.2T resembles the "0.7 anomaly" observed in quantum point contacts in a GaAs-AlGaAs two dimensional electron gas, having a possible origin in electron-electron interactions.

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Charge transport in a single superconducting tin nanowire encapsulated in a multiwalled carbon nanotube

The charge transport properties of single superconducting tin nanowires, encapsulated by multiwalled carbon nanotubes have been investigated by multi-probe measurements. The multiwalled carbon nanotube protects the tin nanowire from oxidation and shape fragmentation and therefore allows us to investigate the electronic properties of stable wires with diameters as small as 25 nm. The transparency of the contact between the Ti/Au electrode and nanowire can be tuned by argonion etching the multiwalled nanotube. Application of a large electrical current results in local heating at the contact which in turn suppresses superconductivity.

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Stabilizing single atom contacts by molecular bridge formation

Gold-molecule-gold junctions can be formed by carefully breaking a gold wire in a solution containing dithiolated molecules. Surprisingly, there is little understanding on the mechanical details of the bridge formation process and specifically on the role that the dithiol molecules play themselves. We propose that alkanedithiol molecules have already formed bridges between the gold electrodes before the atomic gold-gold junction is broken. This leads to stabilization of the single atomic gold junction, as observed experimentally. Our data can be understood within a simple spring model.

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Electronic spin transport and spin precession in single graphene layers at room temperature

The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effects, absence of weak localization and the existence of a minimum conductivity. In addition to dissipative transport also supercurrent transport has already been observed. It has also been suggested that graphene might be a promising material for spintronics and related applications, such as the realization of spin qubits, due to the low intrinsic spin orbit interaction, as well as the low hyperfine interaction of the electron spins with the carbon nuclei. As a first step in the direction of graphene spintronics and spin qubits we report the observation of spin transport, as well as Larmor spin precession over micrometer long distances using single graphene layer based field effect transistors. The non-local spin valve geometry was used, employing four terminal contact geometries with ferromagnetic cobalt electrodes, which make contact to the graphene sheet through a thin oxide layer. We observe clear bipolar (changing from positive to negative sign) spin signals which reflect the magnetization direction of all 4 electrodes, indicating that spin coherence extends underneath all 4 contacts. No significant changes in the spin signals occur between 4.2K, 77K and room temperature. From Hanle type spin precession measurements we extract a spin relaxation length between 1.5 and 2 micron at room temperature, only weakly dependent on charge density, which is varied from n~0 at the Dirac neutrality point to n = 3.6 10^16/m^2. The spin polarization of the ferromagnetic contacts is calculated from the measurements to be around 10%.

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Voltage generation by ferromagnetic resonance

A ferromagnet can resonantly absorbs rf radiation to sustain a steady precession of the magnetization around an internal or applied magnetic field. We show that under these ferromagnetic resonance (FMR) conditions, a dc voltage is generated at a normal-metal electric contact to a ferromagnet with spin-flip scattering. This mechanism allows an easy electric detection of magnetization dyamics.

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The spin-torque transistor

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin-valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required.

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